This letter reports direct experimental evidence that the high-energy tail of the hot carrier luminescence distribution of deep submicron silicon MOSFETs is essentially modified by the application of a substrate voltage. The bias and temperature dependence of the phenomenon are consistent with an enhancement of the high-energy tail of the energy distribution due to a second impact ionization event occurring at the drain to substrate junction.
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements / Pavesi, Maura; L., Selmi; Manfredi, Manfredo; E., Sangiorgi; M., Mastrapasqua; J., Bude. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 20:11(1999), pp. 595-597. [10.1109/55.798055]
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements
PAVESI, Maura;MANFREDI, Manfredo;
1999-01-01
Abstract
This letter reports direct experimental evidence that the high-energy tail of the hot carrier luminescence distribution of deep submicron silicon MOSFETs is essentially modified by the application of a substrate voltage. The bias and temperature dependence of the phenomenon are consistent with an enhancement of the high-energy tail of the energy distribution due to a second impact ionization event occurring at the drain to substrate junction.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
