This paper describes an extensive analysis of the degradation of InGaN-based LEDs submitted to reverse-bias stress and Electrostatic Discharge events. Results described within the paper indicate that: (i) reverse-bias current flows through localized leakage paths, related to the presence of structural defects; (ii) the position of these paths can be identified by means of emission microscopy; (iii) reverse-bias stress can induce a degradation of the electrical characteristics of the devices (decrease in breakdown voltage); (iv) degradation is due to the injection of highly accelerated carriers through the active region of the LEDs, with the subsequent generation/propagation of point defects; (v) the localized leakage paths responsible for reverse-current conduction can constitute weak regions with respect to reverse-bias ESD events.

A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events / M. Meneghini; A. Tazzoli; E. Ranzato; N. Trivellin; G. Meneghesso; E. Zanoni; M. Pavesi; M. Manfredi; R. Butendeich; U. Zehnder; B. Hahn. - ELETTRONICO. - (2010), pp. 522-527. ((Intervento presentato al convegno 2010 IEEE International Reliability Physics Symposium (IRPS 2010) tenutosi a Garden Grove (Anaheim), California, USA nel 2-6 May 2010 [10.1109/IRPS.2010.5488776].

A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events

PAVESI, Maura;MANFREDI, Manfredo;
2010

Abstract

This paper describes an extensive analysis of the degradation of InGaN-based LEDs submitted to reverse-bias stress and Electrostatic Discharge events. Results described within the paper indicate that: (i) reverse-bias current flows through localized leakage paths, related to the presence of structural defects; (ii) the position of these paths can be identified by means of emission microscopy; (iii) reverse-bias stress can induce a degradation of the electrical characteristics of the devices (decrease in breakdown voltage); (iv) degradation is due to the injection of highly accelerated carriers through the active region of the LEDs, with the subsequent generation/propagation of point defects; (v) the localized leakage paths responsible for reverse-current conduction can constitute weak regions with respect to reverse-bias ESD events.
978-1-4244-5431-0
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events / M. Meneghini; A. Tazzoli; E. Ranzato; N. Trivellin; G. Meneghesso; E. Zanoni; M. Pavesi; M. Manfredi; R. Butendeich; U. Zehnder; B. Hahn. - ELETTRONICO. - (2010), pp. 522-527. ((Intervento presentato al convegno 2010 IEEE International Reliability Physics Symposium (IRPS 2010) tenutosi a Garden Grove (Anaheim), California, USA nel 2-6 May 2010 [10.1109/IRPS.2010.5488776].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/2578844
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