This paper describes an extensive analysis of the degradation of InGaN-based LEDs submitted to reverse-bias stress and Electrostatic Discharge events. Results described within the paper indicate that: (i) reverse-bias current flows through localized leakage paths, related to the presence of structural defects; (ii) the position of these paths can be identified by means of emission microscopy; (iii) reverse-bias stress can induce a degradation of the electrical characteristics of the devices (decrease in breakdown voltage); (iv) degradation is due to the injection of highly accelerated carriers through the active region of the LEDs, with the subsequent generation/propagation of point defects; (v) the localized leakage paths responsible for reverse-current conduction can constitute weak regions with respect to reverse-bias ESD events.

A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events / M., Meneghini; A., Tazzoli; E., Ranzato; N., Trivellin; G., Meneghesso; E., Zanoni; Pavesi, Maura; Manfredi, Manfredo; R., Butendeich; U., Zehnder; B., Hahn. - ELETTRONICO. - (2010), pp. 522-527. (Intervento presentato al convegno 2010 IEEE International Reliability Physics Symposium (IRPS 2010) tenutosi a Garden Grove (Anaheim), California, USA nel 2-6 May 2010) [10.1109/IRPS.2010.5488776].

A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events

PAVESI, Maura;MANFREDI, Manfredo;
2010-01-01

Abstract

This paper describes an extensive analysis of the degradation of InGaN-based LEDs submitted to reverse-bias stress and Electrostatic Discharge events. Results described within the paper indicate that: (i) reverse-bias current flows through localized leakage paths, related to the presence of structural defects; (ii) the position of these paths can be identified by means of emission microscopy; (iii) reverse-bias stress can induce a degradation of the electrical characteristics of the devices (decrease in breakdown voltage); (iv) degradation is due to the injection of highly accelerated carriers through the active region of the LEDs, with the subsequent generation/propagation of point defects; (v) the localized leakage paths responsible for reverse-current conduction can constitute weak regions with respect to reverse-bias ESD events.
2010
978-1-4244-5431-0
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events / M., Meneghini; A., Tazzoli; E., Ranzato; N., Trivellin; G., Meneghesso; E., Zanoni; Pavesi, Maura; Manfredi, Manfredo; R., Butendeich; U., Zehnder; B., Hahn. - ELETTRONICO. - (2010), pp. 522-527. (Intervento presentato al convegno 2010 IEEE International Reliability Physics Symposium (IRPS 2010) tenutosi a Garden Grove (Anaheim), California, USA nel 2-6 May 2010) [10.1109/IRPS.2010.5488776].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2578844
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