Impact-ionization phenomena have been studied in InAlAs/InGaAs HEMT's on InP-substrates by means of DC measurements and of a 2D hydrodynamic simulator. An anomalous double bell-shaped curve behaviour of the gate current as a function of Vgs has been found and attributed to a widening of the gate-drain high electric field region on increasing Vgs beyond 0 V. We correlate impactionization features with light emission in the 1.1÷3.2 eV energy range.
Anomalous impact ionization gate current in high breakdown InP-based HEMTs / G., Meneghesso; Manfredi, Manfredo; Pavesi, Maura; U., Auer; P., Ellrodt; W., Prost; F. J., Tegude; C., Canali; E., Zanoni. - ELETTRONICO. - (1996), pp. 1001-1004. (Intervento presentato al convegno 26th European Solid-State Device Research Conference ESSDERC '96 tenutosi a Bologna, Italy nel 9-11 Sept. 1996).
Anomalous impact ionization gate current in high breakdown InP-based HEMTs
MANFREDI, Manfredo;PAVESI, Maura;
1996-01-01
Abstract
Impact-ionization phenomena have been studied in InAlAs/InGaAs HEMT's on InP-substrates by means of DC measurements and of a 2D hydrodynamic simulator. An anomalous double bell-shaped curve behaviour of the gate current as a function of Vgs has been found and attributed to a widening of the gate-drain high electric field region on increasing Vgs beyond 0 V. We correlate impactionization features with light emission in the 1.1÷3.2 eV energy range.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
