On- and off- state breakdown effects in composite channel and conventional InP-based HEMTs are studied by means of electrical measurements, and electroluminescence spectroscopy. We demonstrate that channel quantization increases off-state and on-state breakdown voltage. The temperature coefficient of the electron impact ionization rate in In/sub 0.53/Ga/sub 0.47/As has been studied. Differently from what happens in GaAs-based devices, carrier multiplication increases on increasing the temperature.
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs / G., Meneghesso; A., Mion; A., Neviani; M., Matloubian; J., Brown; M., Hafizi; T., Liu; C., Canali; Pavesi, Maura; Manfredi, Manfredo; E., Zanoni. - ELETTRONICO. - 5558894:(1996), pp. 43-46. (Intervento presentato al convegno International Electron Devices Meeting 1996, IEDM‘96 tenutosi a San Francisco, CA, USA nel 8-11 Dec. 1996) [10.1109/IEDM.1996.553118].
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs
PAVESI, Maura;MANFREDI, Manfredo;
1996-01-01
Abstract
On- and off- state breakdown effects in composite channel and conventional InP-based HEMTs are studied by means of electrical measurements, and electroluminescence spectroscopy. We demonstrate that channel quantization increases off-state and on-state breakdown voltage. The temperature coefficient of the electron impact ionization rate in In/sub 0.53/Ga/sub 0.47/As has been studied. Differently from what happens in GaAs-based devices, carrier multiplication increases on increasing the temperature.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
