We describe a coupled experimental-numerical study of the effect of proton irradiation on the inductive turn-off of fast recovery p-i-n diodes for snubberless applications. The goal is to avoid the large overvoltages and spurious oscillations that may arise at switch-off and jeopardize the diode's reliability. We evaluated different proton irradiation profiles in order to extract indications on the optimum trade-off among switching speed, recovery softness, overvoltage and spurious oscillation damping.

H+ Irradiation for reverse recovery softness and reliability of power p-i-n diodes for snubberless applications / COVA P.; R. MENOZZI; M. PORTESINE. - 1(2002), pp. 143-146. ((Intervento presentato al convegno 23rd IEEE International Conference on Microelectronics (MIEL 2002) tenutosi a Nis, Yugoslavia. nel 12-15 maggio 2002. [10.1109/MIEL.2002.1003160].

H+ Irradiation for reverse recovery softness and reliability of power p-i-n diodes for snubberless applications

COVA, Paolo;MENOZZI, Roberto;
2002

Abstract

We describe a coupled experimental-numerical study of the effect of proton irradiation on the inductive turn-off of fast recovery p-i-n diodes for snubberless applications. The goal is to avoid the large overvoltages and spurious oscillations that may arise at switch-off and jeopardize the diode's reliability. We evaluated different proton irradiation profiles in order to extract indications on the optimum trade-off among switching speed, recovery softness, overvoltage and spurious oscillation damping.
978-078037235-1
H+ Irradiation for reverse recovery softness and reliability of power p-i-n diodes for snubberless applications / COVA P.; R. MENOZZI; M. PORTESINE. - 1(2002), pp. 143-146. ((Intervento presentato al convegno 23rd IEEE International Conference on Microelectronics (MIEL 2002) tenutosi a Nis, Yugoslavia. nel 12-15 maggio 2002. [10.1109/MIEL.2002.1003160].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/2297944
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