We describe a coupled experimental-numerical study of the effect of proton irradiation on the inductive turn-off of fast recovery p-i-n diodes for snubberless applications. The goal is to avoid the large overvoltages and spurious oscillations that may arise at switch-off and jeopardize the diode's reliability. We evaluated different proton irradiation profiles in order to extract indications on the optimum trade-off among switching speed, recovery softness, overvoltage and spurious oscillation damping.
H+ Irradiation for reverse recovery softness and reliability of power p-i-n diodes for snubberless applications / Cova, Paolo; Menozzi, Roberto; M., Portesine. - 1:(2002), pp. 143-146. (Intervento presentato al convegno 23rd IEEE International Conference on Microelectronics (MIEL 2002) tenutosi a Nis, Yugoslavia. nel 12-15 maggio 2002.) [10.1109/MIEL.2002.1003160].
H+ Irradiation for reverse recovery softness and reliability of power p-i-n diodes for snubberless applications
COVA, Paolo;MENOZZI, Roberto;
2002-01-01
Abstract
We describe a coupled experimental-numerical study of the effect of proton irradiation on the inductive turn-off of fast recovery p-i-n diodes for snubberless applications. The goal is to avoid the large overvoltages and spurious oscillations that may arise at switch-off and jeopardize the diode's reliability. We evaluated different proton irradiation profiles in order to extract indications on the optimum trade-off among switching speed, recovery softness, overvoltage and spurious oscillation damping.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
