This work shows results of dynamic lumped-element (LE) thermal modeling of power AlGaN/GaN HEMTs. A realistic 3D structure including top-side metals, GaN-Si thermal boundary resistance, die-attach, and source via hole is modeled using a finite-element (FE) tool, and the results are used to develop simplified LE dynamic thermal models. We show that the LE models can match the FE data with excellent accuracy.
Empirical and physical modeling of self-heating in power AlGaN/GaN HEMTs / Bernardoni, Mirko; Delmonte, Nicola; Menozzi, Roberto. - (2012), pp. 95-98. (Intervento presentato al convegno Int. Conf. Compound Semiconductor Manufacturing Technology (CS-MANTECH) tenutosi a Boston, MA, USA nel 23-26 aprile 2012).
Empirical and physical modeling of self-heating in power AlGaN/GaN HEMTs
BERNARDONI, Mirko;DELMONTE, Nicola;MENOZZI, Roberto
2012-01-01
Abstract
This work shows results of dynamic lumped-element (LE) thermal modeling of power AlGaN/GaN HEMTs. A realistic 3D structure including top-side metals, GaN-Si thermal boundary resistance, die-attach, and source via hole is modeled using a finite-element (FE) tool, and the results are used to develop simplified LE dynamic thermal models. We show that the LE models can match the FE data with excellent accuracy.| File | Dimensione | Formato | |
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