The effects of the Al mole fraction of a thin (4 nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25 Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435°C are studied
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers / A., Bosacchi; S., Franchi; E., Gombia; R., Mosca; F., Fantini; Menozzi, Roberto; S., Naccarella. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - 30:(1994), pp. 820-821. [10.1049/el:19940533]
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers
MENOZZI, Roberto;
1994-01-01
Abstract
The effects of the Al mole fraction of a thin (4 nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25 Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435°C are studiedFile in questo prodotto:
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