A detailed numerical analysis of the source and drain parasitic resistances and effective channel length of state-of-the-art GaAs MESFETs is presented. Two-dimensional simulations are used to evaluate different criteria (physical and electrical) for defining the device parameters of interest, as well as to study their gate voltage dependence. To this purpose a novel criterion which provides a simple procedure to determine the series resistances as a function of gate bias is proposed.
Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFET’s / L., Selmi; Menozzi, Roberto; P., Gandolfi; B., Riccò. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 39:(1992), pp. 2015-2020. [10.1109/16.155872]
Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFET’s
MENOZZI, Roberto;
1992-01-01
Abstract
A detailed numerical analysis of the source and drain parasitic resistances and effective channel length of state-of-the-art GaAs MESFETs is presented. Two-dimensional simulations are used to evaluate different criteria (physical and electrical) for defining the device parameters of interest, as well as to study their gate voltage dependence. To this purpose a novel criterion which provides a simple procedure to determine the series resistances as a function of gate bias is proposed.| File | Dimensione | Formato | |
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