The aim of this paper is to show and discuss results of three-dimensional finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and cooling strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal modeling and management.

Three-dimensional finite-element thermal simulation of GaN-based HEMTs / Bertoluzza, F; Delmonte, Nicola; Menozzi, Roberto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 49:5(2009), pp. 468-473. [10.1016/j.microrel.2009.02.009]

Three-dimensional finite-element thermal simulation of GaN-based HEMTs

DELMONTE, Nicola;MENOZZI, Roberto
2009-01-01

Abstract

The aim of this paper is to show and discuss results of three-dimensional finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and cooling strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal modeling and management.
Three-dimensional finite-element thermal simulation of GaN-based HEMTs / Bertoluzza, F; Delmonte, Nicola; Menozzi, Roberto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 49:5(2009), pp. 468-473. [10.1016/j.microrel.2009.02.009]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2293784
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