The aim of this paper is to show and discuss results of three-dimensional finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and cooling strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal modeling and management.
Three-dimensional finite-element thermal simulation of GaN-based HEMTs / Bertoluzza, F; Delmonte, Nicola; Menozzi, Roberto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 49:5(2009), pp. 468-473. [10.1016/j.microrel.2009.02.009]
Three-dimensional finite-element thermal simulation of GaN-based HEMTs
DELMONTE, Nicola;MENOZZI, Roberto
2009-01-01
Abstract
The aim of this paper is to show and discuss results of three-dimensional finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and cooling strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal modeling and management.File in questo prodotto:
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