PARISINI, Antonella
 Distribuzione geografica
Continente #
NA - Nord America 4.091
EU - Europa 3.720
AS - Asia 2.633
SA - Sud America 307
AF - Africa 44
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 3
Totale 10.802
Nazione #
US - Stati Uniti d'America 3.991
CN - Cina 1.112
SG - Singapore 865
IT - Italia 652
IE - Irlanda 624
SE - Svezia 508
FI - Finlandia 506
DE - Germania 393
HK - Hong Kong 363
UA - Ucraina 329
BR - Brasile 279
NL - Olanda 213
FR - Francia 154
TR - Turchia 112
CA - Canada 84
RU - Federazione Russa 78
GB - Regno Unito 60
IN - India 47
BE - Belgio 40
AT - Austria 35
CZ - Repubblica Ceca 27
JP - Giappone 22
PL - Polonia 20
BD - Bangladesh 17
ID - Indonesia 17
ES - Italia 15
RO - Romania 13
KR - Corea 12
CH - Svizzera 10
EC - Ecuador 10
MX - Messico 10
CI - Costa d'Avorio 9
LT - Lituania 8
PK - Pakistan 8
VN - Vietnam 8
MA - Marocco 7
PT - Portogallo 7
CO - Colombia 6
LV - Lettonia 6
UZ - Uzbekistan 6
IQ - Iraq 5
IR - Iran 5
TN - Tunisia 5
ZA - Sudafrica 5
AZ - Azerbaigian 4
CM - Camerun 4
EU - Europa 4
HU - Ungheria 4
KE - Kenya 4
NG - Nigeria 4
NP - Nepal 4
VE - Venezuela 4
BG - Bulgaria 3
JO - Giordania 3
LB - Libano 3
PE - Perù 3
SK - Slovacchia (Repubblica Slovacca) 3
TM - Turkmenistan 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
AM - Armenia 2
EG - Egitto 2
ET - Etiopia 2
HN - Honduras 2
LK - Sri Lanka 2
LU - Lussemburgo 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
PY - Paraguay 2
SA - Arabia Saudita 2
AF - Afghanistan, Repubblica islamica di 1
AR - Argentina 1
AU - Australia 1
BN - Brunei Darussalam 1
BO - Bolivia 1
CL - Cile 1
CR - Costa Rica 1
DK - Danimarca 1
DZ - Algeria 1
EE - Estonia 1
HR - Croazia 1
IS - Islanda 1
JM - Giamaica 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MC - Monaco 1
MN - Mongolia 1
OM - Oman 1
PA - Panama 1
PH - Filippine 1
RS - Serbia 1
SN - Senegal 1
TC - Turks e Caicos 1
TH - Thailandia 1
Totale 10.802
Città #
Dublin 620
Chandler 600
Singapore 555
Santa Clara 508
Jacksonville 375
Hong Kong 359
Beijing 287
Ashburn 286
Ann Arbor 276
Parma 272
Boardman 174
Dearborn 157
Nanjing 145
Shanghai 134
Princeton 123
Helsinki 118
Munich 115
San Mateo 82
Strasbourg 74
Izmir 70
Wilmington 69
Hefei 63
New York 62
Shenyang 60
Toronto 58
Marseille 50
Moscow 48
Nanchang 47
Turku 45
Bremen 42
Hebei 41
Milan 37
Jinan 36
Brussels 35
Columbus 35
Houston 34
Los Angeles 34
Des Moines 33
Kunming 33
Seattle 32
Vienna 29
Guangzhou 28
Jiaxing 28
Amsterdam 26
Woodbridge 25
Bologna 23
Tianjin 23
Changsha 22
Kocaeli 21
Brno 19
Dallas 19
Falkenstein 19
Fremont 19
Rome 18
Jakarta 17
Tokyo 17
Council Bluffs 16
São Paulo 16
Warsaw 16
Norwalk 15
London 13
Ottawa 13
The Dalles 13
Istanbul 12
Nuremberg 12
Bengaluru 11
Chicago 11
Frankfurt am Main 11
Modena 10
Rio de Janeiro 10
Abidjan 9
Brooklyn 9
Hangzhou 9
Piacenza 9
Zhengzhou 9
Borås 8
Mumbai 8
Reggio Emilia 8
Seoul 8
Aubagne 7
Brasília 7
Campinas 7
Grafing 7
Heidelberg 7
Madrid 7
Reggio Nell'emilia 7
San Francisco 7
Cambridge 6
Chengdu 6
Curitiba 6
Haikou 6
Phoenix 6
Pune 6
Riga 6
Stockholm 6
Tashkent 6
Berlin 5
Civitavecchia 5
Corroios 5
Dhaka 5
Totale 6.963
Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 176
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 161
Thermal stability of ε-Ga2O3 polymorph 158
Reduction of spatial correlations amongst DX charges owing to capture of photoexcited electrons into a localized donor state in Al0.35Ga0.65As 154
Structure, vibrational, electrical and optical study of [C2H10N2] (IO3)2·4HIO3 141
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 127
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 125
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 125
Si and Sn doping of ε-Ga2O3 layers 123
Sol-gel growth and characterization of In2O3 thin films 120
Coexistence of th DX center and other Si-related electron bound states in AlGaAs 116
X-ray, optical, vibrational, electrical, and DFT study of the polymorphic structure of ethylenediammonium bis iodate α-C2H10N2(IO3)2 and β-C2H10N2(IO3)2 116
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 115
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 112
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 112
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 111
Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit 111
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 110
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 108
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs 107
A study of acceptor levels induced by intrinsic (carbon) and extrinsic (zinc) doping in GaAs epitaxial layers, MOVPE-grown by liquid metalorganic sources 106
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 103
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility 100
Metal-insulator transition induced by the magnetic field in n-type GaSb, 98
Analysis of persistent photoconductivity in sulphur doped GaSb 98
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 97
Innovative back-contact for Sb2Se3-based thin film solar cells 96
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures 96
The electronic structure of ε-Ga2O3 93
Crystal structure, vibrational, electrical, optical and DFT study of C2H10N2(IO3)2.HIO3 93
A study of the electrical properties controlled by residual acceptors in gallium antimonide 92
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 92
Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As 90
Admittance spectroscopy of GaAs/InGaP MQW structures 90
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 90
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" 89
EXAFS in mixed defect chalcopyrite ZnGa2(SxSe1-x)4 89
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 89
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 88
The influence of spatial correlations of DX charges in analysing electron mobility data to investigate the DX center charge state 88
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time 88
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 86
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 86
Electrical characterization of a buried GaSb p-n junction controlled by native defects 86
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 85
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 84
Photovoltage and photocurrent spectroscopy of p+-i-n+ GaAs/AlGaAs quantum well heterostructures 83
CdIn2S2Se2: a new semiconducting compound 82
Hall measurements under weak persistent photoexcitation in Si-doped AlxGa1-xAs 82
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 82
A MREI model for the zincblende-like phonons in CdGa2(SxSe1-x)4 mixed crystals 81
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 80
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb 80
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 80
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time 80
Hall and photo-Hall effect measurements on sulphur-doped GaSb 79
Ambito C - Un percorso di formazione insegnanti: Il moto circolare - Section C - A teacher training course: The circular motion 78
Organic memristive devices based on pectin as a solid polyelectrolyte 78
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 78
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 78
Low temperature mobility of photoexcited electrons in AlxGa1-xAs containing DX centers 77
A shallow state coexisting with the DX center in Te-doped AlGaSb 77
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 77
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 77
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 77
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 76
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 76
Polysaccarides-based gels and solid-state electronic devices with memresistive properties: Synergy between polyaniline electrochemistry and biology 76
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 76
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 75
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 75
Is localization universal in low-dimensional disordered matter? 75
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells 75
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 75
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE 74
Assessment of phonon scattering-related mobility in β-Ga2O3 74
Resonance effects in the Raman spectrum of CdGa2Se4 74
Investigation of GaAs/InGaP superlattices for quantum well solar cells 73
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 73
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 73
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 72
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb 71
Electron scattering by spatially correlated DX charges 71
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 71
Optical functions from 0.01 to 5 eV of InGaP/GaAs epitaxial layers 70
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures 70
Concentration dependence of optical absorption in Tellurium doped GaSb 69
Optical absorption near the fundamental absorption edge in GaSb 68
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies 68
The role of the polyelectrolyte composition in kinetic behaviour of organic memristive device 67
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 67
Preparation by MBE and study of GaSb-based structures 66
Investigation of the charge state of the DX centre through analysis of electron mobility data in AlGaAs 66
Influence of the DX center on the transport properties of Si-doped AlxGa1-xAs 66
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 66
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001) 65
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 65
Spatial correlations of DX charges and electron mobility in AlGaAs 65
Electronic structure and vertical transport in random dimer GaAs/AlxGa1-xAs superlattices 65
Organic memristive element with Chitosan as solid polyelectrolyte 64
Totale 8.898
Categoria #
all - tutte 44.634
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 44.634


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021900 15 101 76 22 111 36 78 42 218 63 120 18
2021/2022669 23 22 11 37 26 11 90 85 32 52 38 242
2022/20232.410 303 259 164 166 201 258 31 177 751 17 64 19
2023/2024950 60 88 34 51 61 216 70 51 41 55 71 152
2024/20253.586 65 162 198 267 333 513 195 203 438 323 256 633
2025/2026250 250 0 0 0 0 0 0 0 0 0 0 0
Totale 11.140