IRIS
PARISINI, Antonella
 Distribuzione geografica
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Continente #
NA - Nord America 3.184
EU - Europa 2.825
AS - Asia 1.422
AF - Africa 22
Continente sconosciuto - Info sul continente non disponibili 4
SA - Sud America 4
OC - Oceania 1
Totale 7.462
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Nazione #
US - Stati Uniti d'America 3.125
CN - Cina 1.039
IE - Irlanda 615
SE - Svezia 503
IT - Italia 449
FI - Finlandia 394
UA - Ucraina 326
DE - Germania 234
SG - Singapore 234
FR - Francia 99
TR - Turchia 92
CA - Canada 59
BE - Belgio 36
GB - Regno Unito 33
NL - Olanda 30
CZ - Repubblica Ceca 23
IN - India 18
JP - Giappone 17
AT - Austria 15
RU - Federazione Russa 14
RO - Romania 12
ES - Italia 10
CH - Svizzera 9
CI - Costa d'Avorio 9
IR - Iran 5
PT - Portogallo 5
TN - Tunisia 5
EU - Europa 4
KR - Corea 4
NG - Nigeria 4
BG - Bulgaria 3
HU - Ungheria 3
LV - Lettonia 3
PK - Pakistan 3
TM - Turkmenistan 3
CO - Colombia 2
HK - Hong Kong 2
LB - Libano 2
MA - Marocco 2
SK - Slovacchia (Repubblica Slovacca) 2
AF - Afghanistan, Repubblica islamica di 1
BN - Brunei Darussalam 1
BR - Brasile 1
CM - Camerun 1
DK - Danimarca 1
DZ - Algeria 1
EC - Ecuador 1
EE - Estonia 1
HR - Croazia 1
LU - Lussemburgo 1
MC - Monaco 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
OM - Oman 1
PL - Polonia 1
Totale 7.462
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Città #
Dublin 611
Chandler 600
Jacksonville 373
Beijing 278
Ann Arbor 276
Parma 189
Boardman 174
Singapore 166
Ashburn 161
Dearborn 157
Nanjing 145
Shanghai 132
Princeton 123
San Mateo 82
Strasbourg 74
Izmir 69
Wilmington 69
Shenyang 60
New York 56
Helsinki 52
Nanchang 47
Toronto 46
Bremen 42
Hebei 41
Hefei 36
Jinan 35
Houston 34
Des Moines 33
Kunming 33
Seattle 32
Brussels 31
Milan 30
Jiaxing 28
Guangzhou 27
Woodbridge 25
Santa Clara 23
Tianjin 23
Changsha 22
Kocaeli 21
Brno 19
Fremont 19
Los Angeles 17
Norwalk 15
Vienna 15
Tokyo 14
Bologna 13
Dallas 13
Abidjan 9
Chicago 9
Hangzhou 9
Piacenza 9
Zhengzhou 9
Borås 8
Modena 8
Ottawa 8
Amsterdam 7
Aubagne 7
Grafing 7
Heidelberg 7
Madrid 7
Marseille 7
Reggio Nell'emilia 7
Rome 7
Cambridge 6
Chengdu 6
Haikou 6
Pune 6
Corroios 5
Fuzhou 5
Ningbo 5
Segrate 5
Taizhou 5
Timisoara 5
Wenzhou 5
Dronten 4
Falls Church 4
Kilchberg 4
Lagos 4
Novi di Modena 4
Redwood City 4
Reggio Emilia 4
San Lazzaro di Savena 4
Sant'ilario D'enza 4
Zurich 4
Ashgabat 3
Auburn Hills 3
Augusta 3
Budapest 3
Edinburgh 3
Escanaba 3
Ferrara 3
Guastalla 3
Islamabad 3
Langhirano 3
Lanzhou 3
Leawood 3
Menlo Park 3
Munich 3
Paris 3
Phoenix 3
Totale 4.853
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 132
Reduction of spatial correlations amongst DX charges owing to capture of photoexcited electrons into a localized donor state in Al0.35Ga0.65As 130
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 125
Thermal stability of ε-Ga2O3 polymorph 122
Structure, vibrational, electrical and optical study of [C2H10N2] (IO3)2·4HIO3 120
Si and Sn doping of ε-Ga2O3 layers 97
Sol-gel growth and characterization of In2O3 thin films 96
Coexistence of th DX center and other Si-related electron bound states in AlGaAs 95
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 92
Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit 90
X-ray, optical, vibrational, electrical, and DFT study of the polymorphic structure of ethylenediammonium bis iodate α-C2H10N2(IO3)2 and β-C2H10N2(IO3)2 90
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 85
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility 82
Metal-insulator transition induced by the magnetic field in n-type GaSb, 81
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 81
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 81
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 79
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs 78
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 77
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 76
Analysis of persistent photoconductivity in sulphur doped GaSb 73
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 73
A study of the electrical properties controlled by residual acceptors in gallium antimonide 72
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 72
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 71
The influence of spatial correlations of DX charges in analysing electron mobility data to investigate the DX center charge state 70
EXAFS in mixed defect chalcopyrite ZnGa2(SxSe1-x)4 70
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 70
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" 69
Admittance spectroscopy of GaAs/InGaP MQW structures 69
Crystal structure, vibrational, electrical, optical and DFT study of C2H10N2(IO3)2.HIO3 69
Innovative back-contact for Sb2Se3-based thin film solar cells 68
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 68
A study of acceptor levels induced by intrinsic (carbon) and extrinsic (zinc) doping in GaAs epitaxial layers, MOVPE-grown by liquid metalorganic sources 68
Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As 67
The electronic structure of ε-Ga2O3 67
CdIn2S2Se2: a new semiconducting compound 66
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures 66
Hall measurements under weak persistent photoexcitation in Si-doped AlxGa1-xAs 66
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 65
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 64
Is localization universal in low-dimensional disordered matter? 62
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 62
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb 61
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 61
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time 61
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 61
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 60
Photovoltage and photocurrent spectroscopy of p+-i-n+ GaAs/AlGaAs quantum well heterostructures 60
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 59
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time 59
Hall and photo-Hall effect measurements on sulphur-doped GaSb 58
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells 58
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 58
Electrical characterization of a buried GaSb p-n junction controlled by native defects 58
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 58
Resonance effects in the Raman spectrum of CdGa2Se4 57
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 57
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 57
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 57
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 56
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 56
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 56
A MREI model for the zincblende-like phonons in CdGa2(SxSe1-x)4 mixed crystals 55
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE 55
Investigation of GaAs/InGaP superlattices for quantum well solar cells 55
A shallow state coexisting with the DX center in Te-doped AlGaSb 55
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 55
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 55
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 55
Low temperature mobility of photoexcited electrons in AlxGa1-xAs containing DX centers 54
Optical functions from 0.01 to 5 eV of InGaP/GaAs epitaxial layers 54
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 54
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 53
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb 53
Concentration dependence of optical absorption in Tellurium doped GaSb 53
Assessment of phonon scattering-related mobility in β-Ga2O3 53
Influence of the DX center on the transport properties of Si-doped AlxGa1-xAs 53
EXAFS study of mixed crystals of the AIIB2IIIX4VI family 51
Investigation of the charge state of the DX centre through analysis of electron mobility data in AlGaAs 51
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures 51
Electron scattering by spatially correlated DX charges 50
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 50
Organic memristive devices based on pectin as a solid polyelectrolyte 50
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 50
Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation 50
Polysaccarides-based gels and solid-state electronic devices with memresistive properties: Synergy between polyaniline electrochemistry and biology 50
Preparation by MBE and study of GaSb-based structures 49
Electronic structure and vertical transport in random dimer GaAs/AlxGa1-xAs superlattices 49
Effective ionic charges in CdGa2Se4 and CdGa2S4 Solid State Commun. 51, 691-695 (1984) 48
Spatial correlations of DX charges and electron mobility in AlGaAs 48
The role of the polyelectrolyte composition in kinetic behaviour of organic memristive device 48
Optical absorption near the fundamental absorption edge in GaSb 48
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies 48
Nonlinear electric field effects in the magnetoresistance of n-type GaSb 47
Raman investigation of lattice dynamics in defect chalcopyrite mixed crystals 46
Ambito C - Un percorso di formazione insegnanti: Il moto circolare - Section C - A teacher training course: The circular motion 45
Occupancy level of the DX center in Te-doped AlxGa1-xSb 45
Computer-assisted Hall effect measurements as a function of temperature 45
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 44
Totale 6.519
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Categoria #
all - tutte 30.325
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 30.325
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020941 0 0 90 23 105 136 141 29 134 122 71 90
2020/2021900 15 101 76 22 111 36 78 42 218 63 120 18
2021/2022669 23 22 11 37 26 11 90 85 32 52 38 242
2022/20232.410 303 259 164 166 201 258 31 177 751 17 64 19
2023/2024950 60 88 34 51 61 216 70 51 41 55 71 152
2024/2025417 65 162 190 0 0 0 0 0 0 0 0 0
Totale 7.721