IRIS
PARISINI, Antonella
 Distribuzione geografica
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Continente #
NA - Nord America 6.560
AS - Asia 6.061
EU - Europa 4.306
SA - Sud America 903
AF - Africa 335
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 6
Totale 18.179
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Nazione #
US - Stati Uniti d'America 6.363
SG - Singapore 2.162
CN - Cina 1.766
VN - Vietnam 914
IT - Italia 781
BR - Brasile 692
IE - Irlanda 634
SE - Svezia 525
FI - Finlandia 510
HK - Hong Kong 495
DE - Germania 411
UA - Ucraina 342
FR - Francia 308
ZA - Sudafrica 230
NL - Olanda 220
GB - Regno Unito 168
TR - Turchia 137
RU - Federazione Russa 124
IN - India 123
CA - Canada 114
AR - Argentina 78
BD - Bangladesh 73
MX - Messico 62
PL - Polonia 48
JP - Giappone 46
IQ - Iraq 44
KR - Corea 42
AT - Austria 40
BE - Belgio 40
EC - Ecuador 40
ID - Indonesia 38
ES - Italia 36
PK - Pakistan 36
CZ - Repubblica Ceca 28
CO - Colombia 26
MA - Marocco 24
VE - Venezuela 22
PH - Filippine 20
UZ - Uzbekistan 17
RO - Romania 15
CI - Costa d'Avorio 14
SA - Arabia Saudita 14
TH - Thailandia 14
TN - Tunisia 14
JO - Giordania 13
PY - Paraguay 13
EG - Egitto 12
AE - Emirati Arabi Uniti 11
CH - Svizzera 11
CL - Cile 11
LB - Libano 11
LT - Lituania 11
KE - Kenya 10
PE - Perù 9
PT - Portogallo 9
KG - Kirghizistan 8
MY - Malesia 8
UY - Uruguay 8
AZ - Azerbaigian 7
NG - Nigeria 7
NP - Nepal 7
AL - Albania 6
AU - Australia 6
CR - Costa Rica 6
DZ - Algeria 6
HU - Ungheria 6
IR - Iran 6
KZ - Kazakistan 6
LV - Lettonia 6
TW - Taiwan 6
OM - Oman 5
BG - Bulgaria 4
BH - Bahrain 4
CM - Camerun 4
ET - Etiopia 4
EU - Europa 4
JM - Giamaica 4
CG - Congo 3
GE - Georgia 3
HN - Honduras 3
MN - Mongolia 3
PS - Palestinian Territory 3
RS - Serbia 3
SK - Slovacchia (Repubblica Slovacca) 3
SN - Senegal 3
SY - Repubblica araba siriana 3
TM - Turkmenistan 3
AM - Armenia 2
BN - Brunei Darussalam 2
BO - Bolivia 2
GA - Gabon 2
GY - Guiana 2
IL - Israele 2
LK - Sri Lanka 2
LU - Lussemburgo 2
MK - Macedonia 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
PA - Panama 2
QA - Qatar 2
Totale 18.155
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Città #
Singapore 1.079
Ashburn 917
Dublin 628
Chandler 600
San Jose 579
Santa Clara 531
Beijing 465
Hong Kong 463
Dallas 392
Jacksonville 375
Ho Chi Minh City 309
Parma 301
Ann Arbor 276
Boardman 218
Johannesburg 211
Hanoi 204
Dearborn 157
Los Angeles 153
Nanjing 146
Shanghai 145
Lauterbourg 129
Princeton 123
Helsinki 121
Hefei 117
Munich 115
New York 107
San Mateo 82
Strasbourg 74
Izmir 70
Wilmington 69
Toronto 66
Buffalo 63
Shenyang 61
Moscow 51
Marseille 50
São Paulo 49
Council Bluffs 48
Nanchang 47
Milan 46
Turku 45
Bremen 42
Hebei 41
Houston 41
Jinan 38
Warsaw 38
Guangzhou 37
London 37
Brussels 35
Columbus 35
Seattle 35
Tokyo 35
Kunming 34
Des Moines 33
Kensington 33
Vienna 33
Da Nang 32
Tianjin 32
Amsterdam 30
Haiphong 30
Bologna 29
Jiaxing 29
Orem 29
Seoul 28
Brooklyn 27
Changsha 27
Chennai 26
Woodbridge 25
Rio de Janeiro 23
Rome 23
Stockholm 23
Chicago 22
Frankfurt am Main 22
Hải Dương 21
Jakarta 21
Kocaeli 21
Mexico City 21
Falkenstein 20
Istanbul 20
The Dalles 20
Atlanta 19
Biên Hòa 19
Brno 19
Fremont 19
Baghdad 17
Dhaka 17
Curitiba 16
Mumbai 16
Boston 15
Brasília 15
Manchester 15
Norwalk 15
Tashkent 15
Abidjan 14
Modena 14
Montreal 14
Nuremberg 14
Ottawa 14
Poplar 14
Phoenix 13
Reggio Emilia 13
Totale 11.157
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 260
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 232
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 221
Thermal stability of ε-Ga2O3 polymorph 220
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 218
Reduction of spatial correlations amongst DX charges owing to capture of photoexcited electrons into a localized donor state in Al0.35Ga0.65As 195
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 180
Structure, vibrational, electrical and optical study of [C2H10N2] (IO3)2·4HIO3 180
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 180
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 179
Coexistence of th DX center and other Si-related electron bound states in AlGaAs 176
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 170
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 169
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 169
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 168
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 168
X-ray, optical, vibrational, electrical, and DFT study of the polymorphic structure of ethylenediammonium bis iodate α-C2H10N2(IO3)2 and β-C2H10N2(IO3)2 166
Sol-gel growth and characterization of In2O3 thin films 165
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 162
Analysis of persistent photoconductivity in sulphur doped GaSb 161
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 160
Si and Sn doping of ε-Ga2O3 layers 160
Innovative back-contact for Sb2Se3-based thin film solar cells 156
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility 156
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures 155
A study of acceptor levels induced by intrinsic (carbon) and extrinsic (zinc) doping in GaAs epitaxial layers, MOVPE-grown by liquid metalorganic sources 154
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs 152
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time 149
A MREI model for the zincblende-like phonons in CdGa2(SxSe1-x)4 mixed crystals 148
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 147
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 146
The electronic structure of ε-Ga2O3 145
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 144
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 144
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" 144
Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit 143
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 143
Ambito C - Un percorso di formazione insegnanti: Il moto circolare - Section C - A teacher training course: The circular motion 142
Crystal structure, vibrational, electrical, optical and DFT study of C2H10N2(IO3)2.HIO3 142
EXAFS in mixed defect chalcopyrite ZnGa2(SxSe1-x)4 140
Effect of lithium diffusion into Ga2O3 thin films 139
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 139
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 138
A study of the electrical properties controlled by residual acceptors in gallium antimonide 138
Electrical characterization of a buried GaSb p-n junction controlled by native defects 138
Effect of Heterojunction Characteristics and Deep Electronic Levels on the Performance of (Cd,Zn)S/Sb2Se3 Solar Cells 138
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 137
Admittance spectroscopy of GaAs/InGaP MQW structures 136
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb 136
A shallow state coexisting with the DX center in Te-doped AlGaSb 135
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 135
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 130
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 129
The influence of spatial correlations of DX charges in analysing electron mobility data to investigate the DX center charge state 129
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time 129
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 129
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 128
Substrate-Dependent Characteristics of CuSbS2 Solar Absorber Layers Grown by Spray Pyrolysis 126
CdIn2S2Se2: a new semiconducting compound 126
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 126
Metal-insulator transition induced by the magnetic field in n-type GaSb, 124
Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As 123
Tetravalent element doping of β-Ga₂O₃ films grown by pulsed electron deposition technique 122
Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy 122
Investigation of GaAs/InGaP superlattices for quantum well solar cells 122
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 122
Organic memristive devices based on pectin as a solid polyelectrolyte 119
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 119
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE 118
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 118
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 118
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 117
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 116
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 116
Polysaccarides-based gels and solid-state electronic devices with memresistive properties: Synergy between polyaniline electrochemistry and biology 116
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb 113
Concentration dependence of optical absorption in Tellurium doped GaSb 113
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 113
Assessment of phonon scattering-related mobility in β-Ga2O3 113
Photovoltage and photocurrent spectroscopy of p+-i-n+ GaAs/AlGaAs quantum well heterostructures 113
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 113
Hall and photo-Hall effect measurements on sulphur-doped GaSb 112
Resonance effects in the Raman spectrum of CdGa2Se4 112
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies 111
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 110
Crystalline phase evolution in CuSbS2 solar absorber thin films fabricated via spray pyrolysis 109
Hall measurements under weak persistent photoexcitation in Si-doped AlxGa1-xAs 109
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 109
Effective ionic charges in CdGa2Se4 and CdGa2S4 Solid State Commun. 51, 691-695 (1984) 108
Organic memristive element with Chitosan as solid polyelectrolyte 108
null 107
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 107
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 106
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 106
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 106
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures 106
About the Hole Transport Analysis in Heavy Doped p-Type 4H-SiC(Al) 106
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells 106
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 105
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 105
Totale 13.888
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Categoria #
all - tutte 61.428
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 61.428
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021201 0 0 0 0 0 0 0 0 0 63 120 18
2021/2022669 23 22 11 37 26 11 90 85 32 52 38 242
2022/20232.410 303 259 164 166 201 258 31 177 751 17 64 19
2023/2024950 60 88 34 51 61 216 70 51 41 55 71 152
2024/20253.586 65 162 198 267 333 513 195 203 438 323 256 633
2025/20267.639 764 715 949 860 1.147 469 885 440 785 625 0 0
Totale 18.529