IRIS
PARISINI, Antonella
 Distribuzione geografica
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Continente #
NA - Nord America 7.411
AS - Asia 6.202
EU - Europa 4.461
SA - Sud America 913
Continente sconosciuto - Info sul continente non disponibili 356
AF - Africa 338
OC - Oceania 9
Totale 19.690
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Nazione #
US - Stati Uniti d'America 7.180
SG - Singapore 2.175
CN - Cina 1.784
IT - Italia 918
VN - Vietnam 916
BR - Brasile 699
IE - Irlanda 634
SE - Svezia 527
FI - Finlandia 510
HK - Hong Kong 499
DE - Germania 423
UA - Ucraina 342
FR - Francia 310
ZA - Sudafrica 230
NL - Olanda 220
BD - Bangladesh 170
GB - Regno Unito 169
TR - Turchia 137
CA - Canada 132
IN - India 125
RU - Federazione Russa 124
AR - Argentina 78
MX - Messico 62
JP - Giappone 49
PL - Polonia 48
IQ - Iraq 44
KR - Corea 42
AT - Austria 40
BE - Belgio 40
EC - Ecuador 40
ID - Indonesia 39
ES - Italia 37
PK - Pakistan 36
CZ - Repubblica Ceca 28
CO - Colombia 27
MA - Marocco 24
VE - Venezuela 22
PH - Filippine 20
UZ - Uzbekistan 17
RO - Romania 15
CI - Costa d'Avorio 14
PY - Paraguay 14
SA - Arabia Saudita 14
TH - Thailandia 14
TN - Tunisia 14
CR - Costa Rica 13
JO - Giordania 13
CL - Cile 12
EG - Egitto 12
AE - Emirati Arabi Uniti 11
CH - Svizzera 11
KE - Kenya 11
LB - Libano 11
LT - Lituania 11
MY - Malesia 9
PE - Perù 9
PT - Portogallo 9
JM - Giamaica 8
KG - Kirghizistan 8
UY - Uruguay 8
AU - Australia 7
AZ - Azerbaigian 7
DZ - Algeria 7
NG - Nigeria 7
NP - Nepal 7
AL - Albania 6
HU - Ungheria 6
IR - Iran 6
KZ - Kazakistan 6
LV - Lettonia 6
TW - Taiwan 6
OM - Oman 5
TT - Trinidad e Tobago 5
BG - Bulgaria 4
BH - Bahrain 4
CM - Camerun 4
ET - Etiopia 4
EU - Europa 4
CG - Congo 3
GE - Georgia 3
HN - Honduras 3
MN - Mongolia 3
PS - Palestinian Territory 3
RS - Serbia 3
SK - Slovacchia (Repubblica Slovacca) 3
SN - Senegal 3
SY - Repubblica araba siriana 3
TM - Turkmenistan 3
AM - Armenia 2
BN - Brunei Darussalam 2
BO - Bolivia 2
GA - Gabon 2
GY - Guiana 2
IL - Israele 2
LK - Sri Lanka 2
LU - Lussemburgo 2
MK - Macedonia 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
PA - Panama 2
Totale 19.313
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Città #
Singapore 1.088
Ashburn 945
San Jose 717
Dublin 628
Chandler 600
Santa Clara 561
Beijing 472
Hong Kong 464
Dallas 405
Jacksonville 375
Ho Chi Minh City 310
Parma 308
Council Bluffs 294
Ann Arbor 276
Boardman 233
Johannesburg 211
Hanoi 205
Los Angeles 175
Dearborn 158
Nanjing 146
Shanghai 145
New York 137
Lauterbourg 129
Princeton 123
Helsinki 121
Hefei 117
Munich 115
San Mateo 82
Strasbourg 74
Buffalo 70
Izmir 70
Toronto 69
Wilmington 69
Milan 63
Shenyang 61
Moscow 51
Marseille 50
São Paulo 49
Nanchang 48
Turku 45
Houston 43
Bremen 42
Hebei 41
Bologna 39
Jinan 38
London 38
Seattle 38
Tokyo 38
Warsaw 38
Guangzhou 37
Columbus 36
Rome 36
Brussels 35
Kunming 34
Des Moines 33
Kensington 33
Vienna 33
Da Nang 32
Tianjin 32
Brooklyn 31
Orem 31
Amsterdam 30
Haiphong 30
Jiaxing 29
Seoul 28
Changsha 27
Woodbridge 27
Chennai 26
Atlanta 25
Chicago 24
Rio de Janeiro 23
Stockholm 23
Frankfurt am Main 22
The Dalles 22
Hải Dương 21
Jakarta 21
Kocaeli 21
Mexico City 21
Falkenstein 20
Istanbul 20
Montreal 20
Biên Hòa 19
Brno 19
Fremont 19
Baghdad 17
Dhaka 17
Phoenix 17
Boston 16
Curitiba 16
Mumbai 16
Brasília 15
Manchester 15
Norwalk 15
Ottawa 15
Tashkent 15
Abidjan 14
Modena 14
Nuremberg 14
Poplar 14
Reggio Emilia 14
Totale 11.798
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 265
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 237
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 233
Thermal stability of ε-Ga2O3 polymorph 228
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 227
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 220
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 212
Reduction of spatial correlations amongst DX charges owing to capture of photoexcited electrons into a localized donor state in Al0.35Ga0.65As 197
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 191
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 189
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 185
Coexistence of th DX center and other Si-related electron bound states in AlGaAs 181
Structure, vibrational, electrical and optical study of [C2H10N2] (IO3)2·4HIO3 181
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 178
Tetravalent element doping of β-Ga₂O₃ films grown by pulsed electron deposition technique 176
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 175
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 175
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 174
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 172
X-ray, optical, vibrational, electrical, and DFT study of the polymorphic structure of ethylenediammonium bis iodate α-C2H10N2(IO3)2 and β-C2H10N2(IO3)2 171
Sol-gel growth and characterization of In2O3 thin films 170
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 166
Si and Sn doping of ε-Ga2O3 layers 164
Analysis of persistent photoconductivity in sulphur doped GaSb 164
A study of acceptor levels induced by intrinsic (carbon) and extrinsic (zinc) doping in GaAs epitaxial layers, MOVPE-grown by liquid metalorganic sources 163
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 162
Innovative back-contact for Sb2Se3-based thin film solar cells 161
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility 159
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures 157
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs 156
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 155
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time 155
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 154
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" 154
Effect of Heterojunction Characteristics and Deep Electronic Levels on the Performance of (Cd,Zn)S/Sb2Se3 Solar Cells 154
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 153
A MREI model for the zincblende-like phonons in CdGa2(SxSe1-x)4 mixed crystals 153
The electronic structure of ε-Ga2O3 152
Substrate-Dependent Characteristics of CuSbS2 Solar Absorber Layers Grown by Spray Pyrolysis 150
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 150
Ambito C - Un percorso di formazione insegnanti: Il moto circolare - Section C - A teacher training course: The circular motion 148
Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit 147
Crystal structure, vibrational, electrical, optical and DFT study of C2H10N2(IO3)2.HIO3 147
Effect of lithium diffusion into Ga2O3 thin films 145
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 145
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 145
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb 144
EXAFS in mixed defect chalcopyrite ZnGa2(SxSe1-x)4 143
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 142
A study of the electrical properties controlled by residual acceptors in gallium antimonide 140
Electrical characterization of a buried GaSb p-n junction controlled by native defects 140
Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy 139
A shallow state coexisting with the DX center in Te-doped AlGaSb 139
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 139
Admittance spectroscopy of GaAs/InGaP MQW structures 138
The influence of spatial correlations of DX charges in analysing electron mobility data to investigate the DX center charge state 137
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 134
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 133
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 133
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 132
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time 131
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 130
CdIn2S2Se2: a new semiconducting compound 129
Metal-insulator transition induced by the magnetic field in n-type GaSb, 128
Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As 127
Investigation of GaAs/InGaP superlattices for quantum well solar cells 127
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 125
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 125
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE 123
Organic memristive devices based on pectin as a solid polyelectrolyte 123
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 123
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 122
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb 121
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 121
Concentration dependence of optical absorption in Tellurium doped GaSb 120
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 120
Polysaccarides-based gels and solid-state electronic devices with memresistive properties: Synergy between polyaniline electrochemistry and biology 120
Photovoltage and photocurrent spectroscopy of p+-i-n+ GaAs/AlGaAs quantum well heterostructures 118
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 118
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 117
Assessment of phonon scattering-related mobility in β-Ga2O3 116
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 115
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 115
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 115
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies 115
Effective ionic charges in CdGa2Se4 and CdGa2S4 Solid State Commun. 51, 691-695 (1984) 114
Resonance effects in the Raman spectrum of CdGa2Se4 114
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 114
Crystalline phase evolution in CuSbS2 solar absorber thin films fabricated via spray pyrolysis 113
Hall and photo-Hall effect measurements on sulphur-doped GaSb 113
Organic memristive element with Chitosan as solid polyelectrolyte 113
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 112
Hall measurements under weak persistent photoexcitation in Si-doped AlxGa1-xAs 112
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 111
About the Hole Transport Analysis in Heavy Doped p-Type 4H-SiC(Al) 111
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 110
Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study 110
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 109
Raman investigation of lattice dynamics of pseudoternary mixed crystals 109
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures 108
Totale 14.646
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Categoria #
all - tutte 68.850
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 68.850
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022646 0 22 11 37 26 11 90 85 32 52 38 242
2022/20232.410 303 259 164 166 201 258 31 177 751 17 64 19
2023/2024950 60 88 34 51 61 216 70 51 41 55 71 152
2024/20253.586 65 162 198 267 333 513 195 203 438 323 256 633
2025/20268.183 764 715 949 860 1.147 469 885 440 785 688 281 200
2026/2027617 336 281 0 0 0 0 0 0 0 0 0 0
Totale 19.690