IRIS
PARISINI, Antonella
 Distribuzione geografica
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Continente #
NA - Nord America 5.510
AS - Asia 4.705
EU - Europa 3.996
SA - Sud America 768
AF - Africa 243
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 5
Totale 15.232
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Nazione #
US - Stati Uniti d'America 5.351
SG - Singapore 1.931
CN - Cina 1.579
IT - Italia 713
IE - Irlanda 630
BR - Brasile 615
SE - Svezia 524
FI - Finlandia 507
DE - Germania 401
HK - Hong Kong 395
UA - Ucraina 339
VN - Vietnam 333
NL - Olanda 220
ZA - Sudafrica 173
FR - Francia 172
RU - Federazione Russa 123
TR - Turchia 118
GB - Regno Unito 115
CA - Canada 107
IN - India 78
AR - Argentina 58
PL - Polonia 45
BE - Belgio 40
MX - Messico 39
AT - Austria 38
BD - Bangladesh 38
JP - Giappone 36
EC - Ecuador 35
KR - Corea 33
ID - Indonesia 32
CZ - Repubblica Ceca 27
PK - Pakistan 24
ES - Italia 22
IQ - Iraq 21
CO - Colombia 17
MA - Marocco 17
RO - Romania 15
UZ - Uzbekistan 13
PY - Paraguay 12
VE - Venezuela 12
CH - Svizzera 10
LT - Lituania 10
CI - Costa d'Avorio 9
PT - Portogallo 8
TN - Tunisia 8
AE - Emirati Arabi Uniti 7
EG - Egitto 7
JO - Giordania 7
AZ - Azerbaigian 6
IR - Iran 6
KE - Kenya 6
LV - Lettonia 6
PE - Perù 6
UY - Uruguay 6
AL - Albania 5
CL - Cile 5
DZ - Algeria 5
HU - Ungheria 5
LB - Libano 5
NG - Nigeria 5
NP - Nepal 5
SA - Arabia Saudita 5
BG - Bulgaria 4
CM - Camerun 4
EU - Europa 4
MY - Malesia 4
AU - Australia 3
BH - Bahrain 3
ET - Etiopia 3
KZ - Kazakistan 3
SK - Slovacchia (Repubblica Slovacca) 3
SN - Senegal 3
TM - Turkmenistan 3
AM - Armenia 2
BN - Brunei Darussalam 2
CG - Congo 2
CR - Costa Rica 2
HN - Honduras 2
IL - Israele 2
JM - Giamaica 2
KG - Kirghizistan 2
LK - Sri Lanka 2
LU - Lussemburgo 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
PS - Palestinian Territory 2
RS - Serbia 2
TT - Trinidad e Tobago 2
AF - Afghanistan, Repubblica islamica di 1
BA - Bosnia-Erzegovina 1
BO - Bolivia 1
BS - Bahamas 1
BY - Bielorussia 1
DK - Danimarca 1
EE - Estonia 1
GA - Gabon 1
GE - Georgia 1
GT - Guatemala 1
GY - Guiana 1
HR - Croazia 1
Totale 15.219
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Città #
Singapore 984
Ashburn 758
Dublin 624
Chandler 600
Santa Clara 524
Beijing 454
Hong Kong 391
Dallas 386
Jacksonville 375
Parma 294
Ann Arbor 276
Boardman 218
Johannesburg 161
Dearborn 157
Ho Chi Minh City 152
Nanjing 146
Shanghai 140
Princeton 123
Los Angeles 120
Helsinki 119
Hefei 117
Munich 115
New York 96
San Mateo 82
Strasbourg 74
Hanoi 70
Izmir 70
Wilmington 69
Toronto 64
Shenyang 61
Moscow 51
Marseille 50
Nanchang 47
Turku 45
Bremen 42
Buffalo 42
São Paulo 42
Hebei 41
Milan 41
Houston 39
Jinan 38
Warsaw 37
Brussels 35
Columbus 35
Guangzhou 35
Seattle 35
Des Moines 33
Kunming 33
London 33
Tianjin 32
Vienna 31
Amsterdam 30
Tokyo 30
Jiaxing 29
Bologna 28
Seoul 27
Changsha 26
Brooklyn 25
Woodbridge 25
Orem 22
Stockholm 22
Chennai 21
Chicago 21
Jakarta 21
Kocaeli 21
Falkenstein 20
Rio de Janeiro 20
Brno 19
Fremont 19
Rome 19
Council Bluffs 18
Atlanta 16
Frankfurt am Main 16
San Jose 16
Boston 15
Manchester 15
Mexico City 15
Norwalk 15
Brasília 14
Mumbai 14
Ottawa 14
Curitiba 13
Haiphong 13
Istanbul 13
Nuremberg 13
Poplar 13
Tashkent 13
The Dalles 13
Denver 12
Hangzhou 12
Modena 12
Phoenix 12
Reggio Emilia 12
Bengaluru 11
Dhaka 11
Montreal 11
Zhengzhou 10
Abidjan 9
Biên Hòa 9
Campinas 9
Totale 9.471
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 224
Thermal stability of ε-Ga2O3 polymorph 197
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 196
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 192
Reduction of spatial correlations amongst DX charges owing to capture of photoexcited electrons into a localized donor state in Al0.35Ga0.65As 178
Structure, vibrational, electrical and optical study of [C2H10N2] (IO3)2·4HIO3 167
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 161
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 156
Coexistence of th DX center and other Si-related electron bound states in AlGaAs 154
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 154
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 149
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 148
Si and Sn doping of ε-Ga2O3 layers 146
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 146
X-ray, optical, vibrational, electrical, and DFT study of the polymorphic structure of ethylenediammonium bis iodate α-C2H10N2(IO3)2 and β-C2H10N2(IO3)2 145
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 143
Analysis of persistent photoconductivity in sulphur doped GaSb 143
Sol-gel growth and characterization of In2O3 thin films 143
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 142
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 141
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 139
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 136
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs 136
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures 136
Innovative back-contact for Sb2Se3-based thin film solar cells 135
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility 134
Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit 133
The electronic structure of ε-Ga2O3 133
A MREI model for the zincblende-like phonons in CdGa2(SxSe1-x)4 mixed crystals 131
A study of acceptor levels induced by intrinsic (carbon) and extrinsic (zinc) doping in GaAs epitaxial layers, MOVPE-grown by liquid metalorganic sources 128
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb 127
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time 126
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" 125
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 123
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 122
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 122
Electrical characterization of a buried GaSb p-n junction controlled by native defects 122
A study of the electrical properties controlled by residual acceptors in gallium antimonide 121
(Invited) 4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing 119
Ambito C - Un percorso di formazione insegnanti: Il moto circolare - Section C - A teacher training course: The circular motion 118
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 118
Crystal structure, vibrational, electrical, optical and DFT study of C2H10N2(IO3)2.HIO3 117
Effect of Heterojunction Characteristics and Deep Electronic Levels on the Performance of (Cd,Zn)S/Sb2Se3 Solar Cells 117
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 116
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 116
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 115
Admittance spectroscopy of GaAs/InGaP MQW structures 114
A shallow state coexisting with the DX center in Te-doped AlGaSb 114
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 113
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 113
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 113
Metal-insulator transition induced by the magnetic field in n-type GaSb, 112
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 112
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time 112
EXAFS in mixed defect chalcopyrite ZnGa2(SxSe1-x)4 111
Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As 110
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 110
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 108
The influence of spatial correlations of DX charges in analysing electron mobility data to investigate the DX center charge state 106
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb 105
Organic memristive devices based on pectin as a solid polyelectrolyte 105
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 105
Polysaccarides-based gels and solid-state electronic devices with memresistive properties: Synergy between polyaniline electrochemistry and biology 105
Effect of lithium diffusion into Ga2O3 thin films 104
Investigation of GaAs/InGaP superlattices for quantum well solar cells 104
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 103
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 103
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 101
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 101
Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy 100
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE 100
Photovoltage and photocurrent spectroscopy of p+-i-n+ GaAs/AlGaAs quantum well heterostructures 100
Substrate-Dependent Characteristics of CuSbS2 Solar Absorber Layers Grown by Spray Pyrolysis 99
Concentration dependence of optical absorption in Tellurium doped GaSb 99
Assessment of phonon scattering-related mobility in β-Ga2O3 99
Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC p-n Junctions after 1950°C Post Implantation Annealing 99
Organic memristive element with Chitosan as solid polyelectrolyte 98
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 97
CdIn2S2Se2: a new semiconducting compound 96
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 96
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures 96
Resonance effects in the Raman spectrum of CdGa2Se4 96
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 96
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 95
Electronic structure and vertical transport in random dimer GaAs/AlxGa1-xAs superlattices 95
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 95
Hall and photo-Hall effect measurements on sulphur-doped GaSb 94
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 93
Hall measurements under weak persistent photoexcitation in Si-doped AlxGa1-xAs 93
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 92
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells 92
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 91
Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells 91
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 91
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies 91
Is localization universal in low-dimensional disordered matter? 89
Optical absorption near the fundamental absorption edge in GaSb 88
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 88
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 88
About the Hole Transport Analysis in Heavy Doped p-Type 4H-SiC(Al) 86
Totale 11.897
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Categoria #
all - tutte 55.943
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 55.943
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021575 0 0 0 0 0 36 78 42 218 63 120 18
2021/2022669 23 22 11 37 26 11 90 85 32 52 38 242
2022/20232.410 303 259 164 166 201 258 31 177 751 17 64 19
2023/2024950 60 88 34 51 61 216 70 51 41 55 71 152
2024/20253.586 65 162 198 267 333 513 195 203 438 323 256 633
2025/20264.684 764 715 949 860 1.147 249 0 0 0 0 0 0
Totale 15.574