Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs / Longo, M; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Carbognani, A; Bocchi, C; Gombia, E.. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - 248:(2003), pp. 119-123.

Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs