MAGNANINI, Renato

MAGNANINI, Renato  

Dipartimento di Fisica (attivo dal 01/01/1900 al 25/07/2012)  

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Risultati 1 - 20 di 34 (tempo di esecuzione: 0.037 secondi).
Titolo Data di pubblicazione Autore(i) File
Assessment of Vegard’s law validity in the Ga1-xAlxSb/GaSb epitaxial system 1-gen-1999 Germini, F.; Bocchi, C.; Ferrari, C.; Franchi, S.; Baraldi, Andrea; Magnanini, Renato; DE SALVADOR, D.; Berti, M.; Drigo, A. V.
Composition control of GaSbAs alloys 1-gen-1999 Bosacchi, A.; Franchi, S.; Baraldi, Andrea; Magnanini, Renato; Allegri, P.; Avanzini, V.; Berti, M.; DE SALVADOR, D.
Concentration dependence of optical absorption in Tellurium doped GaSb 1-gen-1997 Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Rotelli, B.; Tarricone, L.; Bosacchi, A.; Franchi, S.
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 1-gen-1997 Baraldi, Andrea; Colonna, F.; Covucci, G.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano; Bosacchi, A.; Franchi, S.
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 1-gen-2003 Longo, M; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Carbognani, A; Bocchi, C; Gombia, E.
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 1-gen-2002 A., Carbognani; M., Longo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; E., Gombia
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb 1-gen-2002 Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Franchi, S; Gombia, E; Mosca, R.
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 1-gen-2008 Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; E., Gombia; M., Longo
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 1-gen-2004 Begotti, L; Longo, Massimo; Magnanini, R; Parisini, A; Tarricone, L.; Bocchi, C; Germini, Fabrizio; Lazzarini, Laura; Nasi, L; Geddo, M
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb 1-gen-2003 Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Gombia, E.; Mosca, R.
“ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GAAS-BASED P-I-N STRUCTURE, GROWN AT LOW TEMPERATURE BY MOVPE, USING TBAS, FOR PHOTOVOLTAIC APPLICATIONS”, 1-gen-2005 M., Begotti; M., Longo; Magnanini, Renato; L., Tarricone; E., Gombia; R., Mosca; M., Lynch; K., Barnham; M., Mazzer; G., Hill
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 1-gen-1995 Bosacchi, A.; Franchi, S.; Allegri, P.; Avanzini, V.; Baraldi, Andrea; Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 1-gen-2003 Ghezzi, Carlo; Longo, M.; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Carbognani, A.; Bocchi, C.; Gombia, E.
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 1-gen-1996 Baraldi, Andrea; Colonna, F.; Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Bosacchi, A.; Franchi, S.
High-resolution x-ray diffraction, x-ray standing-wave, and transmission electron microscopy study of Sb-based single quantum well structures 1-gen-2000 Mukhamedzhanov, E. K. H.; Bocchi, C.; Franchi, S.; Baraldi, Andrea; Magnanini, Renato; Nasi, L.
In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells 1-gen-2001 Ghezzi, Carlo; B., Cioce; Magnanini, Renato; Parisini, Antonella
Influence of As incorporation on the deviation from Vegard’s law in the Ga1-xAlxSb/GaSb system 1-gen-2001 Bocchi, C.; Franchi, S.; Germini, F.; Baraldi, Andrea; Magnanini, Renato; DE SALVADOR, D.; Berti, M.; Drigo, A. V.
Interband optical properties of molecular-beam epitaxially grown GaAs1-xSbx on GaAs substrates 1-gen-1999 Ferrini, R.; Geddo, Mario; Guizzetti, G.; Patrini, M.; Franchi, S.; Bocchi, C.; Germini, F.; Baraldi, Andrea; Magnanini, Renato
Investigation of GaAs/InGaP superlattices for quantum well solar cells 1-gen-2008 Magnanini, R; Tarricone, Luciano; Parisini, Antonella; Longo, M; Gombia, E.
Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit 1-gen-2004 Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella