TARRICONE, Luciano
TARRICONE, Luciano
Dipartimento di Fisica e Scienze della Terra "Macedonio Melloni" (attivo dal 20/07/2012 al 31/12/2016)
"Admittance spectroscopy of InGaP/GaAs MQW structures”
2007-01-01 E., Gombia; C., Ghezzi; A., Parigini; Tarricone, Luciano; M., Longo
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP"
2008-01-01 R., Jakomin; Parisini, Antonella; Tarricone, Luciano; S., Vantaggio; B., Fraboni
"Groowth and characterization of manganese-doped InAsP"
2008-01-01 M., Pristovsek; C., Meissner; M., Kneissl; R., Jakomin; S., Vantaggio; Tarricone, Luciano
"Tailoring the depth of the Mn acceptor in InAsP"
2008-01-01 M., Pristovsek; C., Meissner; M., Kneissl; R., Jakomin; S., Vantaggio; Tarricone, Luciano
A shallow state coexisting with the DX center in Te-doped AlGaSb
1998-01-01 Baraldi, Andrea; Franchi, S.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano
A study of the electrical properties controlled by residual acceptors in gallium antimonide
1993-01-01 F., Meinardi; Parisini, Antonella; Tarricone, Luciano
Admittance spectroscopy of GaAs/InGaP MQW structures
2008-01-01 E., Gombia; Ghezzi, Carlo; Parisini, Antonella; Tarricone, Luciano; M., Longo
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices
2010-01-01 Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Vantaggio, Salvatore; M., Baldini; E., Gombia
CdIn2S2Se2: a new semiconducting compound
1986-01-01 C., Paracchini; Parisini, Antonella; Tarricone, Luciano
Concentration dependence of optical absorption in Tellurium doped GaSb
1997-01-01 Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Rotelli, B.; Tarricone, L.; Bosacchi, A.; Franchi, S.
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity
1997-01-01 Baraldi, Andrea; Colonna, F.; Covucci, G.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano; Bosacchi, A.; Franchi, S.
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity
1997-01-01 Baraldi, A; Colonna, F; Covucci, G; Ghezzi, C; Magnanini, R; Parisini, A; Tarricone, L; Bosacchi, A; Franchi, S
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
2002-01-01 A., Carbognani; M., Longo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; E., Gombia
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
2003-01-01 Longo, M; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Carbognani, A; Bocchi, C; Gombia, E.
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy
2008-01-01 Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; E., Gombia; M., Longo
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source
2004-01-01 Begotti, L; Longo, Massimo; Magnanini, R; Parisini, A; Tarricone, L.; Bocchi, C; Germini, Fabrizio; Lazzarini, Laura; Nasi, L; Geddo, M
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE
2000-01-01 Attolini, G.; Bocchi, C.; Germini, F.; Pelosi, C.; Parisini, Antonella; Tarricone, Luciano; Kudela, R.; Hasenohrl, S.
Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation
2006-01-01 Cesca, T; Verna, A; Mattei, G; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F; Tarricone, Luciano; Longo, M.
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures
2013-01-01 Parisini, Antonella; M., Baldini; E., Gombia; C., Frigeri; R., Jakomin; Tarricone, Luciano
ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GaAs-BASED p-i-n STRUCTURE GROWN BY MOVPE
2005-01-01 Begotti, M.; Tarricone, Luciano; Mosca, R. LYNCH M.; Barnham, K.; Mazzer, M.; Hill, G.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
"Admittance spectroscopy of InGaP/GaAs MQW structures” | 1-gen-2007 | E., Gombia; C., Ghezzi; A., Parigini; Tarricone, Luciano; M., Longo | |
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" | 1-gen-2008 | R., Jakomin; Parisini, Antonella; Tarricone, Luciano; S., Vantaggio; B., Fraboni | |
"Groowth and characterization of manganese-doped InAsP" | 1-gen-2008 | M., Pristovsek; C., Meissner; M., Kneissl; R., Jakomin; S., Vantaggio; Tarricone, Luciano | |
"Tailoring the depth of the Mn acceptor in InAsP" | 1-gen-2008 | M., Pristovsek; C., Meissner; M., Kneissl; R., Jakomin; S., Vantaggio; Tarricone, Luciano | |
A shallow state coexisting with the DX center in Te-doped AlGaSb | 1-gen-1998 | Baraldi, Andrea; Franchi, S.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano | |
A study of the electrical properties controlled by residual acceptors in gallium antimonide | 1-gen-1993 | F., Meinardi; Parisini, Antonella; Tarricone, Luciano | |
Admittance spectroscopy of GaAs/InGaP MQW structures | 1-gen-2008 | E., Gombia; Ghezzi, Carlo; Parisini, Antonella; Tarricone, Luciano; M., Longo | |
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices | 1-gen-2010 | Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Vantaggio, Salvatore; M., Baldini; E., Gombia | |
CdIn2S2Se2: a new semiconducting compound | 1-gen-1986 | C., Paracchini; Parisini, Antonella; Tarricone, Luciano | |
Concentration dependence of optical absorption in Tellurium doped GaSb | 1-gen-1997 | Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Rotelli, B.; Tarricone, L.; Bosacchi, A.; Franchi, S. | |
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity | 1-gen-1997 | Baraldi, Andrea; Colonna, F.; Covucci, G.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano; Bosacchi, A.; Franchi, S. | |
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity | 1-gen-1997 | Baraldi, A; Colonna, F; Covucci, G; Ghezzi, C; Magnanini, R; Parisini, A; Tarricone, L; Bosacchi, A; Franchi, S | |
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs | 1-gen-2002 | A., Carbognani; M., Longo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; E., Gombia | |
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs | 1-gen-2003 | Longo, M; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Carbognani, A; Bocchi, C; Gombia, E. | |
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy | 1-gen-2008 | Ghezzi, Carlo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; E., Gombia; M., Longo | |
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source | 1-gen-2004 | Begotti, L; Longo, Massimo; Magnanini, R; Parisini, A; Tarricone, L.; Bocchi, C; Germini, Fabrizio; Lazzarini, Laura; Nasi, L; Geddo, M | |
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE | 1-gen-2000 | Attolini, G.; Bocchi, C.; Germini, F.; Pelosi, C.; Parisini, Antonella; Tarricone, Luciano; Kudela, R.; Hasenohrl, S. | |
Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation | 1-gen-2006 | Cesca, T; Verna, A; Mattei, G; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F; Tarricone, Luciano; Longo, M. | |
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures | 1-gen-2013 | Parisini, Antonella; M., Baldini; E., Gombia; C., Frigeri; R., Jakomin; Tarricone, Luciano | |
ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GaAs-BASED p-i-n STRUCTURE GROWN BY MOVPE | 1-gen-2005 | Begotti, M.; Tarricone, Luciano; Mosca, R. LYNCH M.; Barnham, K.; Mazzer, M.; Hill, G. |