Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices

Longo, Massimo; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore; Bocchi, C.; Germini, F.; Lazzarini, L.

doi:10.1016/j.jcrysgro.2009.07.015

TheoptimizationoftheelectronicpropertiesofInGaP/GaAsMQWs,tobeinsertedinmultilayers heterostructurefornovelphotovoltaicdevices,wasperformedbystructural,opticalandphotoelectrical measurements.DifferentsequencesofnominallyundopedInGaPandGaAsalternatedlayerswere grownbylow-pressuremetalorganicvapourphaseepitaxy,employingtertiarybutylarsineand tertiarybutylphosphine asmetalorganicprecursorsfortheV-groupelements.Inordertominimize the As/Pexchangeeffect,theinterfaceInsegregation,andtocontrolthewholelatticematching,single and multi-quantumwells(MQWs)withdifferent:(i)periods,(ii)wellwidths,(iii)growthtemperatures, (iv) gas-switchingsequencesattheinterfacesand(v)indiumconcentrationsintheInGaPalloy,were prepared andinvestigated.TheinterfacesharpnessandthecompositionalfluctuationofthickMQW region containingupto40well-barriersequenceswereinvestigatedforthemodelling,realizationand evaluationofteststructuresbasedonlow-dimensionalsystemsforthirdgenerationsolarcells

Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices / Longo, Massimo; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore; C., Bocchi; F., Germini; L., Lazzarini. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - 311:(2009), pp. 4293-4300. [10.1016/j.jcrysgro.2009.07.015]