TheoptimizationoftheelectronicpropertiesofInGaP/GaAsMQWs,tobeinsertedinmultilayers heterostructurefornovelphotovoltaicdevices,wasperformedbystructural,opticalandphotoelectrical measurements.DifferentsequencesofnominallyundopedInGaPandGaAsalternatedlayerswere grownbylow-pressuremetalorganicvapourphaseepitaxy,employingtertiarybutylarsineand tertiarybutylphosphine asmetalorganicprecursorsfortheV-groupelements.Inordertominimize the As/Pexchangeeffect,theinterfaceInsegregation,andtocontrolthewholelatticematching,single and multi-quantumwells(MQWs)withdifferent:(i)periods,(ii)wellwidths,(iii)growthtemperatures, (iv) gas-switchingsequencesattheinterfacesand(v)indiumconcentrationsintheInGaPalloy,were prepared andinvestigated.TheinterfacesharpnessandthecompositionalfluctuationofthickMQW region containingupto40well-barriersequenceswereinvestigatedforthemodelling,realizationand evaluationofteststructuresbasedonlow-dimensionalsystemsforthirdgenerationsolarcells

Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices / Longo, Massimo; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore; C., Bocchi; F., Germini; L., Lazzarini. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - 311:(2009), pp. 4293-4300. [10.1016/j.jcrysgro.2009.07.015]

Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices

LONGO, MASSIMO;PARISINI, Antonella;TARRICONE, Luciano;VANTAGGIO, Salvatore;
2009-01-01

Abstract

TheoptimizationoftheelectronicpropertiesofInGaP/GaAsMQWs,tobeinsertedinmultilayers heterostructurefornovelphotovoltaicdevices,wasperformedbystructural,opticalandphotoelectrical measurements.DifferentsequencesofnominallyundopedInGaPandGaAsalternatedlayerswere grownbylow-pressuremetalorganicvapourphaseepitaxy,employingtertiarybutylarsineand tertiarybutylphosphine asmetalorganicprecursorsfortheV-groupelements.Inordertominimize the As/Pexchangeeffect,theinterfaceInsegregation,andtocontrolthewholelatticematching,single and multi-quantumwells(MQWs)withdifferent:(i)periods,(ii)wellwidths,(iii)growthtemperatures, (iv) gas-switchingsequencesattheinterfacesand(v)indiumconcentrationsintheInGaPalloy,were prepared andinvestigated.TheinterfacesharpnessandthecompositionalfluctuationofthickMQW region containingupto40well-barriersequenceswereinvestigatedforthemodelling,realizationand evaluationofteststructuresbasedonlow-dimensionalsystemsforthirdgenerationsolarcells
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices / Longo, Massimo; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore; C., Bocchi; F., Germini; L., Lazzarini. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - 311:(2009), pp. 4293-4300. [10.1016/j.jcrysgro.2009.07.015]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2293774
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