SnO/ε-Ga 2O 3 vertical p–n diodes with planar geometry have been fabricated on c-plane Al 2O3 and investigated by current–voltage measurements. The effects of the in-plane conduction through the Si-doped ε-Ga 2O3 layer on the diode performance and their relevance have been evaluated. A significant series resistance is observed, which shows typical features of the variable range hopping transport observed in Si-doped ε-Ga 2O 3; this in-plane transport mechanism is probably induced by the columnar domain structure of this polymorph. The dependence of the series resistance on the geometry of the diode supports the interpretation. A simple equivalent model is presented to describe the experimental behavior of the diode, supported by preliminary impedance spectroscopy investigation.

Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry / Parisini, A.; Mazzolini, P.; Bierwagen, O.; Borelli, C.; Egbo, K.; Sacchi, A.; Bosi, M.; Seravalli, L.; Tahraoui, A.; Fornari, R.. - In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS. - ISSN 0734-2101. - 40:4(2022), p. 042701. [10.1116/6.0001857]

Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry

Parisini, A.
;
Mazzolini, P.;Borelli, C.;Sacchi, A.;Fornari, R.
2022

Abstract

SnO/ε-Ga 2O 3 vertical p–n diodes with planar geometry have been fabricated on c-plane Al 2O3 and investigated by current–voltage measurements. The effects of the in-plane conduction through the Si-doped ε-Ga 2O3 layer on the diode performance and their relevance have been evaluated. A significant series resistance is observed, which shows typical features of the variable range hopping transport observed in Si-doped ε-Ga 2O 3; this in-plane transport mechanism is probably induced by the columnar domain structure of this polymorph. The dependence of the series resistance on the geometry of the diode supports the interpretation. A simple equivalent model is presented to describe the experimental behavior of the diode, supported by preliminary impedance spectroscopy investigation.
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry / Parisini, A.; Mazzolini, P.; Bierwagen, O.; Borelli, C.; Egbo, K.; Sacchi, A.; Bosi, M.; Seravalli, L.; Tahraoui, A.; Fornari, R.. - In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS. - ISSN 0734-2101. - 40:4(2022), p. 042701. [10.1116/6.0001857]
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/2924909
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