IRIS
PAVESI, Maura
 Distribuzione geografica
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Continente #
NA - Nord America 4.822
AS - Asia 3.960
EU - Europa 3.089
SA - Sud America 625
AF - Africa 196
Continente sconosciuto - Info sul continente non disponibili 8
OC - Oceania 7
Totale 12.707
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Nazione #
US - Stati Uniti d'America 4.696
SG - Singapore 1.660
CN - Cina 1.345
IT - Italia 599
BR - Brasile 511
IE - Irlanda 458
SE - Svezia 424
HK - Hong Kong 346
UA - Ucraina 341
FI - Finlandia 325
DE - Germania 312
VN - Vietnam 200
NL - Olanda 163
ZA - Sudafrica 135
RU - Federazione Russa 111
TR - Turchia 104
GB - Regno Unito 97
FR - Francia 96
CA - Canada 85
IN - India 62
AR - Argentina 40
KR - Corea 39
BD - Bangladesh 36
JP - Giappone 32
AT - Austria 29
BE - Belgio 29
EC - Ecuador 29
MX - Messico 29
PL - Polonia 26
IQ - Iraq 24
PK - Pakistan 24
ES - Italia 21
ID - Indonesia 18
CO - Colombia 15
PY - Paraguay 12
AE - Emirati Arabi Uniti 11
MA - Marocco 11
LT - Lituania 10
TN - Tunisia 10
CZ - Repubblica Ceca 9
UZ - Uzbekistan 9
DZ - Algeria 8
EU - Europa 8
JO - Giordania 8
VE - Venezuela 8
EG - Egitto 7
RO - Romania 7
KE - Kenya 6
KZ - Kazakistan 6
NG - Nigeria 6
PT - Portogallo 6
TT - Trinidad e Tobago 6
AU - Australia 5
CI - Costa d'Avorio 5
NP - Nepal 5
PH - Filippine 5
BG - Bulgaria 4
CM - Camerun 4
IR - Iran 4
LV - Lettonia 4
UY - Uruguay 4
AZ - Azerbaigian 3
HR - Croazia 3
IL - Israele 3
LK - Sri Lanka 3
NO - Norvegia 3
PE - Perù 3
SA - Arabia Saudita 3
AL - Albania 2
BO - Bolivia 2
EE - Estonia 2
LB - Libano 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BN - Brunei Darussalam 1
CG - Congo 1
CH - Svizzera 1
CL - Cile 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
GT - Guatemala 1
IM - Isola di Man 1
IS - Islanda 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
MN - Mongolia 1
MY - Malesia 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
OM - Oman 1
PA - Panama 1
QA - Qatar 1
RS - Serbia 1
SV - El Salvador 1
TV - Tuvalu 1
Totale 12.707
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Città #
Singapore 829
Ashburn 681
Chandler 489
Dublin 457
Santa Clara 420
Dallas 404
Beijing 351
Jacksonville 345
Hong Kong 340
Ann Arbor 234
Parma 180
Boardman 152
Los Angeles 144
Dearborn 135
Johannesburg 127
Nanjing 120
New York 110
Hefei 106
Shanghai 99
Princeton 93
Munich 80
Ho Chi Minh City 76
Helsinki 74
San Mateo 74
Wilmington 60
Izmir 59
Marseille 56
Columbus 54
Moscow 51
Toronto 51
Hanoi 50
Shenyang 44
Council Bluffs 43
Kunming 43
São Paulo 43
Nanchang 40
Buffalo 39
The Dalles 35
San Jose 30
Brussels 29
Hebei 29
Milan 29
Seoul 29
Jinan 28
Houston 26
Rio de Janeiro 25
Amsterdam 24
Warsaw 24
Turku 23
Tianjin 22
Tokyo 22
Seattle 21
Vienna 21
Woodbridge 21
London 20
Changsha 19
Des Moines 18
Guangzhou 18
Phoenix 18
Poplar 18
Jiaxing 17
Orem 17
Rome 17
Atlanta 16
Brooklyn 15
Strasbourg 15
Kocaeli 14
Modena 14
Reggio Emilia 14
San Francisco 14
Zhengzhou 14
Bengaluru 13
Denver 13
Falkenstein 13
Jakarta 13
Norwalk 13
Baghdad 12
Bologna 12
Chennai 12
Stockholm 12
Chicago 11
Frankfurt am Main 11
Ankara 10
Boston 10
Haiphong 10
Istanbul 10
Montreal 10
Nuremberg 10
Washington 10
Brasília 9
Campinas 9
Florence 9
Grafing 9
Manchester 9
Mexico City 9
Ottawa 9
Tashkent 9
Amman 8
Belo Horizonte 8
Bremen 8
Totale 7.770
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 227
Atti del 105° Congresso Nazionale - SIF Società Italiana di Fisica 227
Thermal stability of ε-Ga2O3 polymorph 200
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 199
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 194
Effects of composition and catalyst on the optical properties of ZrO2-based Ormosils films 173
Growth and Characterization of CZT Crystals by the Vertical Bridgman Method for X-ray Detector Applications 169
Electric field reconstruction and transport parameter evaluation in CZT X-ray detectors 166
Improved electroless platinum contacts on CdZnTe X- and γ-rays detectors 166
Electron and hole-related luminescence processes in Gate Injection Transistors 164
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 155
Overcoming the planar contact geometry limitation for the measurement of transport properties and electric field distribution in X- and gamma ray detectors 154
Band to band recombination peak in the light emission of commercial pseudomorphic HEMTs 153
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's 150
Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals 146
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 145
Two-step thermal process in tellurium vapor for tellurium inclusion annealing in high resistivity CdZnTe crystals 145
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 144
Accelerated Life Test of High Brightness Light Emitting Diodes 142
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth 135
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 134
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques 133
Role of Zirconium on the structural film evolution and on the optical properties of sol-gel hybrid organic/inorganic glass films 131
A study of hot electron degradation effects in pseudomorphic HEMTs 130
Anomalous impact ionization gate current in high breakdown InP-based HEMTs 129
Studies on charge collection and transport properties on semi-insulating materials in the presence of a non-uniform electric field 129
Interactions between DX centers and hot electrons and holes in AlGaAs/GaAs heterostructure field-effect transistors 128
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 127
Influence of long-term dc-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 125
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence 125
Advanced physically based device modeling for gate current and hot carrier phenomena in scaled MOSFETs 124
Charge collection in semi-insulator radiation detectors in the presence of a linear decreasing electric field 122
La formazione degli insegnanti del PLS-Fisica negli ultimi cinque anni 122
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 121
On the role of Boron in CdTe and CdZnTe crystals 121
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 120
Evaluation of electric field profile and transport parameters in solid-state CZT detectors 120
Ambito C - Un percorso di formazione insegnanti: Il moto circolare - Section C - A teacher training course: The circular motion 119
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements 119
Effect of Heterojunction Characteristics and Deep Electronic Levels on the Performance of (Cd,Zn)S/Sb2Se3 Solar Cells 119
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 118
An original method to evaluate the transport parameters and reconstruct the electric field in solid-state photodetectors 118
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 117
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material 117
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 114
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 114
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's 114
CZT X-rays detectors obtained by the boron encapsulated vertical Bridgman method 114
A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors 113
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material 112
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime 111
Oriented orthorhombic Lead Oxide film grown by vapour phase for X-ray detector applications 111
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy 111
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs 110
A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs 109
Color matching for color constancy and inconstancy in the transition between foveal vision and extra-macular vision 109
DC and RF instability of GaAs-based PHEMTs due to hot electrons 107
Off-State Breakdown in GaAs Power HFETs 107
Effect of lithium diffusion into Ga2O3 thin films 106
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique 106
IO, DOVE E QUANDO? 105
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman Technique 104
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 103
Electroluminescence and gate current components of InAlAs/InGaAs HFETs 103
Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy 102
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 102
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs 100
On the correlation between drain and gate currents and light emission in GaAs – PHEMTs biased in the impact ionization regime 98
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices 97
Characterization of 6H-SiC JFET by means of hot carrier induced electroluminescence 97
Study of Surface Treatment Effects on the Metal-CdZnTe Interface 96
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth 94
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 93
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors 92
Experimental analysis of polarization in the hot-carrier luminescence of Silicon devices 91
High-temperature failure of GaN LEDs related with passivation 91
Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs 91
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing 90
An overview of physics teacher professional development activities organized within the Italian PLS-Physics plan over the past five years 89
1919: L'eclissi che ha cambiato il mondo - 1919: The eclipse that changed the world 89
Branched gold nanoparticles on ZnO 3D architecture as biomedical SERS sensors 89
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 89
Enhanced luminescence of CuCl microcrystals in an organic-inorganic hybrid matrix 87
Cathode hot electrons and anode hot holes in tunneling MOS capacitors 87
Le questioni affrontate durante il convegno ``Quale didattica della fisica per formare gli insegnanti di scuola primaria?'' - Which kind of physics education for prospective primary teachers? 86
Diagnosis of trapping phenomena in GaN MESFETs 86
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes 86
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 85
Hysteresis loop and cross-talk of organic memristive devices 85
Reliability of deep-UV Light-Emitting Diodes 85
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 84
New measures of the color-matching function in foveal vision 84
Tetravalent element doping of β-Ga₂O₃ films grown by pulsed electron deposition technique 83
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence 83
Electroluminescence analysis of HFET’s breakdown 83
Verification of electron distribution in silicon by means of hot-carrier luminescence measurements 82
Study of Surface Treatment Effects on the Metal-CdZnTe Interface 81
Grassmann’s laws and individual color-matching functions for non-spectral primaries evaluated by maximum saturation technique in foveal vision 80
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 80
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 79
Totale 11.701
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Categoria #
all - tutte 44.476
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 44.476
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021445 0 0 0 0 0 22 77 63 136 45 88 14
2021/2022528 24 12 3 39 37 19 63 71 25 54 53 128
2022/20231.770 187 169 103 167 132 220 26 115 562 22 55 12
2023/2024890 48 67 17 34 69 223 81 62 30 92 58 109
2024/20253.265 59 142 149 275 389 444 200 214 381 251 243 518
2025/20263.843 605 592 875 552 873 346 0 0 0 0 0 0
Totale 12.903