IRIS
PAVESI, Maura
 Distribuzione geografica
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Continente #
NA - Nord America 2.707
EU - Europa 2.180
AS - Asia 1.218
AF - Africa 16
Continente sconosciuto - Info sul continente non disponibili 8
SA - Sud America 2
OC - Oceania 1
Totale 6.132
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Nazione #
US - Stati Uniti d'America 2.659
CN - Cina 883
IE - Irlanda 452
SE - Svezia 412
IT - Italia 340
UA - Ucraina 330
FI - Finlandia 261
SG - Singapore 228
DE - Germania 189
FR - Francia 76
TR - Turchia 73
CA - Canada 48
GB - Regno Unito 30
BE - Belgio 28
NL - Olanda 13
IN - India 12
JP - Giappone 12
PL - Polonia 9
EU - Europa 8
RO - Romania 7
AT - Austria 6
CI - Costa d'Avorio 5
CZ - Repubblica Ceca 5
KR - Corea 5
NG - Nigeria 5
ES - Italia 4
BG - Bulgaria 3
LV - Lettonia 3
RU - Federazione Russa 3
TN - Tunisia 3
EE - Estonia 2
IR - Iran 2
MA - Marocco 2
NO - Norvegia 2
PT - Portogallo 2
AU - Australia 1
BN - Brunei Darussalam 1
BO - Bolivia 1
CH - Svizzera 1
CM - Camerun 1
HK - Hong Kong 1
IM - Isola di Man 1
OM - Oman 1
SK - Slovacchia (Repubblica Slovacca) 1
VE - Venezuela 1
Totale 6.132
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Città #
Chandler 489
Dublin 451
Jacksonville 344
Ann Arbor 234
Beijing 227
Ashburn 199
Singapore 151
Dearborn 135
Boardman 127
Nanjing 120
Parma 94
Princeton 93
Shanghai 92
New York 74
San Mateo 74
Los Angeles 66
Izmir 59
Wilmington 59
Marseille 56
Shenyang 43
Kunming 42
Nanchang 40
Toronto 40
Hefei 33
Helsinki 33
Hebei 29
Brussels 28
Jinan 27
Santa Clara 23
Milan 21
Woodbridge 21
Changsha 19
Des Moines 18
Houston 18
Jiaxing 17
Seattle 17
Tianjin 17
Strasbourg 15
Kocaeli 14
Guangzhou 13
Modena 13
Norwalk 13
Zhengzhou 11
Washington 10
Grafing 9
Warsaw 9
Bremen 8
Segrate 8
Amsterdam 7
Florence 7
Phoenix 7
Reggio Nell'emilia 7
Fremont 6
Ottawa 6
San Lazzaro di Savena 6
Vienna 6
Abidjan 5
Castellarano 5
Falls Church 5
Hangzhou 5
Heidelberg 5
Lagos 5
Reggio Emilia 5
Rome 5
Silver Spring 5
Tokyo 5
Trieste 5
Auburn Hills 4
Dallas 4
Fuzhou 4
Lanzhou 4
Madrid 4
Novi di Modena 4
Pune 4
Santo Stefano di Cadore 4
Taizhou 4
Turin 4
Venice 4
Baotou 3
Bari 3
Bologna 3
Borås 3
Brno 3
Catania 3
Gallarate 3
Guastalla 3
Ningbo 3
Polignano a Mare 3
Riga 3
Rockville 3
Tappahannock 3
Wenzhou 3
Andover 2
Assago 2
Baranzate 2
Brescia 2
Busto Arsizio 2
Caltanissetta 2
Castell'arquato 2
Chengdu 2
Totale 3.962
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 134
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 128
Thermal stability of ε-Ga2O3 polymorph 123
Atti del 105° Congresso Nazionale - SIF Società Italiana di Fisica 116
Effects of composition and catalyst on the optical properties of ZrO2-based Ormosils films 105
Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals 93
Band to band recombination peak in the light emission of commercial pseudomorphic HEMTs 92
Role of Zirconium on the structural film evolution and on the optical properties of sol-gel hybrid organic/inorganic glass films 89
Overcoming the planar contact geometry limitation for the measurement of transport properties and electric field distribution in X- and gamma ray detectors 89
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 88
La formazione degli insegnanti del PLS-Fisica negli ultimi cinque anni 88
Electron and hole-related luminescence processes in Gate Injection Transistors 86
Influence of long-term dc-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 85
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's 82
Studies on charge collection and transport properties on semi-insulating materials in the presence of a non-uniform electric field 78
Electric field reconstruction and transport parameter evaluation in CZT X-ray detectors 77
Interactions between DX centers and hot electrons and holes in AlGaAs/GaAs heterostructure field-effect transistors 77
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 77
CZT X-rays detectors obtained by the boron encapsulated vertical Bridgman method 74
Accelerated Life Test of High Brightness Light Emitting Diodes 74
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman Technique 73
Growth and Characterization of CZT Crystals by the Vertical Bridgman Method for X-ray Detector Applications 71
Oriented orthorhombic Lead Oxide film grown by vapour phase for X-ray detector applications 70
Color matching for color constancy and inconstancy in the transition between foveal vision and extra-macular vision 70
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs 69
Anomalous impact ionization gate current in high breakdown InP-based HEMTs 69
Off-State Breakdown in GaAs Power HFETs 69
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime 68
Charge collection in semi-insulator radiation detectors in the presence of a linear decreasing electric field 67
Improved electroless platinum contacts on CdZnTe X- and γ-rays detectors 67
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements 66
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material 65
A study of hot electron degradation effects in pseudomorphic HEMTs 64
On the correlation between drain and gate currents and light emission in GaAs – PHEMTs biased in the impact ionization regime 64
Advanced physically based device modeling for gate current and hot carrier phenomena in scaled MOSFETs 63
Two-step thermal process in tellurium vapor for tellurium inclusion annealing in high resistivity CdZnTe crystals 63
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 62
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth 61
Electroluminescence and gate current components of InAlAs/InGaAs HFETs 61
On the role of Boron in CdTe and CdZnTe crystals 61
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 60
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's 60
A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs 60
DC and RF instability of GaAs-based PHEMTs due to hot electrons 60
Study of Surface Treatment Effects on the Metal-CdZnTe Interface 60
Evaluation of electric field profile and transport parameters in solid-state CZT detectors 60
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 60
Characterization of 6H-SiC JFET by means of hot carrier induced electroluminescence 60
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques 60
A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors 59
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors 59
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy 59
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique 59
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 59
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence 58
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs 58
IO, DOVE E QUANDO? 56
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 56
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices 56
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material 56
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 55
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth 55
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 54
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing 53
Cathode hot electrons and anode hot holes in tunneling MOS capacitors 53
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 53
New measures of the color-matching function in foveal vision 53
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence 52
Experimental analysis of polarization in the hot-carrier luminescence of Silicon devices 52
Enhanced luminescence of CuCl microcrystals in an organic-inorganic hybrid matrix 52
Verification of electron distribution in silicon by means of hot-carrier luminescence measurements 52
Diagnosis of trapping phenomena in GaN MESFETs 51
Branched gold nanoparticles on ZnO 3D architecture as biomedical SERS sensors 51
Grassmann’s laws and individual color-matching functions for non-spectral primaries evaluated by maximum saturation technique in foveal vision 50
Leakage current and reverse-bias luminescence in InGaN base light-emitting diodes 49
Study of Surface Treatment Effects on the Metal-CdZnTe Interface 49
An original method to evaluate the transport parameters and reconstruct the electric field in solid-state photodetectors 49
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 49
Electroluminescence analysis of HFET’s breakdown 48
Reliability of deep-UV Light-Emitting Diodes 48
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 47
Funzioni colorimetriche in visione fotopica periferica e foveale 47
Ambito C - Un percorso di formazione insegnanti: Il moto circolare - Section C - A teacher training course: The circular motion 46
Hysteresis loop and cross-talk of organic memristive devices 46
Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs 46
Monitoring hot-carrier degradation in SOI MOSFET’s by hot-carrier luminescence techniques 45
The role of Mg complexes in the degradation of InGaN-based LEDs 44
Optical evidence of an electro-thermal threshold in the degradation of InGaN-based LEDs during electrical stress 43
Light emission measurements: a promising tool to identify hot carrier phenomena 43
Le questioni affrontate durante il convegno ``Quale didattica della fisica per formare gli insegnanti di scuola primaria?'' - Which kind of physics education for prospective primary teachers? 41
High-temperature failure of GaN LEDs related with passivation 40
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes 39
An overview of physics teacher professional development activities organized within the Italian PLS-Physics plan over the past five years 37
Impact ionization and photon emission in MOS capacitors and FETs 36
Effects of extreme DC-aging and electron-beam irradiation in InGaN/AlGaN/GaN light emitting diodes 36
Colour constancy and inconstancy related to foveal and extramacular vision. 35
Coupled Monte Carlo simulation of Si and SiO2 transport in MOS capacitors 34
1919: L'eclissi che ha cambiato il mondo - 1919: The eclipse that changed the world 28
Thermal Processesing and Characterizations of Dye Sensitized Solar Cells Based on Nanostructured TiO2 24
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 22
Totale 6.160
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Categoria #
all - tutte 24.275
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.275
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020690 0 0 0 11 104 94 132 21 114 74 69 71
2020/2021697 8 81 71 18 74 22 77 63 136 45 88 14
2021/2022528 24 12 3 39 37 19 63 71 25 54 53 128
2022/20231.770 187 169 103 167 132 220 26 115 562 22 55 12
2023/2024890 48 67 17 34 69 223 81 62 30 92 58 109
2024/2025485 59 142 149 135 0 0 0 0 0 0 0 0
Totale 6.280