IRIS
PAVESI, Maura
 Distribuzione geografica
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Continente #
NA - Nord America 4.730
AS - Asia 3.919
EU - Europa 3.088
SA - Sud America 625
AF - Africa 196
Continente sconosciuto - Info sul continente non disponibili 8
OC - Oceania 7
Totale 12.573
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Nazione #
US - Stati Uniti d'America 4.605
SG - Singapore 1.629
CN - Cina 1.337
IT - Italia 598
BR - Brasile 511
IE - Irlanda 458
SE - Svezia 424
HK - Hong Kong 346
UA - Ucraina 341
FI - Finlandia 325
DE - Germania 312
VN - Vietnam 199
NL - Olanda 163
ZA - Sudafrica 135
RU - Federazione Russa 111
TR - Turchia 104
GB - Regno Unito 97
FR - Francia 96
CA - Canada 84
IN - India 61
AR - Argentina 40
KR - Corea 39
BD - Bangladesh 36
JP - Giappone 32
AT - Austria 29
BE - Belgio 29
EC - Ecuador 29
MX - Messico 29
PL - Polonia 26
IQ - Iraq 24
PK - Pakistan 24
ES - Italia 21
ID - Indonesia 18
CO - Colombia 15
PY - Paraguay 12
AE - Emirati Arabi Uniti 11
MA - Marocco 11
LT - Lituania 10
TN - Tunisia 10
CZ - Repubblica Ceca 9
UZ - Uzbekistan 9
DZ - Algeria 8
EU - Europa 8
JO - Giordania 8
VE - Venezuela 8
EG - Egitto 7
RO - Romania 7
KE - Kenya 6
KZ - Kazakistan 6
NG - Nigeria 6
PT - Portogallo 6
TT - Trinidad e Tobago 6
AU - Australia 5
CI - Costa d'Avorio 5
NP - Nepal 5
PH - Filippine 5
BG - Bulgaria 4
CM - Camerun 4
IR - Iran 4
LV - Lettonia 4
UY - Uruguay 4
AZ - Azerbaigian 3
HR - Croazia 3
IL - Israele 3
LK - Sri Lanka 3
NO - Norvegia 3
PE - Perù 3
SA - Arabia Saudita 3
AL - Albania 2
BO - Bolivia 2
EE - Estonia 2
LB - Libano 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BN - Brunei Darussalam 1
CG - Congo 1
CH - Svizzera 1
CL - Cile 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
GT - Guatemala 1
IM - Isola di Man 1
IS - Islanda 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
MN - Mongolia 1
MY - Malesia 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
OM - Oman 1
PA - Panama 1
QA - Qatar 1
RS - Serbia 1
SV - El Salvador 1
TV - Tuvalu 1
Totale 12.573
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Città #
Singapore 803
Ashburn 615
Chandler 489
Dublin 457
Santa Clara 420
Dallas 404
Beijing 351
Jacksonville 345
Hong Kong 340
Ann Arbor 234
Parma 180
Boardman 152
Los Angeles 142
Dearborn 135
Johannesburg 127
Nanjing 120
New York 110
Hefei 106
Shanghai 99
Princeton 93
Munich 80
Ho Chi Minh City 75
Helsinki 74
San Mateo 74
Wilmington 60
Izmir 59
Marseille 56
Columbus 54
Moscow 51
Hanoi 50
Toronto 50
Shenyang 44
Council Bluffs 43
Kunming 43
São Paulo 43
Nanchang 40
Buffalo 39
The Dalles 35
Brussels 29
Hebei 29
Milan 29
Seoul 29
Jinan 28
Houston 26
Rio de Janeiro 25
Amsterdam 24
Warsaw 24
Turku 23
Tianjin 22
Tokyo 22
Seattle 21
Vienna 21
Woodbridge 21
London 20
Changsha 19
Des Moines 18
Phoenix 18
Poplar 18
Guangzhou 17
Jiaxing 17
Rome 17
Atlanta 16
Orem 15
Strasbourg 15
Brooklyn 14
Kocaeli 14
Modena 14
Reggio Emilia 14
San Francisco 14
Zhengzhou 14
Bengaluru 13
Denver 13
Falkenstein 13
Jakarta 13
Norwalk 13
Baghdad 12
San Jose 12
Stockholm 12
Bologna 11
Chennai 11
Chicago 11
Frankfurt am Main 11
Ankara 10
Boston 10
Haiphong 10
Istanbul 10
Montreal 10
Nuremberg 10
Washington 10
Brasília 9
Campinas 9
Florence 9
Grafing 9
Manchester 9
Mexico City 9
Ottawa 9
Tashkent 9
Amman 8
Belo Horizonte 8
Bremen 8
Totale 7.650
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Nome #
Atti del 105° Congresso Nazionale - SIF Società Italiana di Fisica 225
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 224
Thermal stability of ε-Ga2O3 polymorph 198
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 196
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 193
Effects of composition and catalyst on the optical properties of ZrO2-based Ormosils films 170
Growth and Characterization of CZT Crystals by the Vertical Bridgman Method for X-ray Detector Applications 166
Electric field reconstruction and transport parameter evaluation in CZT X-ray detectors 164
Improved electroless platinum contacts on CdZnTe X- and γ-rays detectors 164
Electron and hole-related luminescence processes in Gate Injection Transistors 160
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 154
Overcoming the planar contact geometry limitation for the measurement of transport properties and electric field distribution in X- and gamma ray detectors 153
Band to band recombination peak in the light emission of commercial pseudomorphic HEMTs 152
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's 149
Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals 143
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 143
Two-step thermal process in tellurium vapor for tellurium inclusion annealing in high resistivity CdZnTe crystals 142
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 142
Accelerated Life Test of High Brightness Light Emitting Diodes 140
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth 134
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 131
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques 131
Role of Zirconium on the structural film evolution and on the optical properties of sol-gel hybrid organic/inorganic glass films 130
A study of hot electron degradation effects in pseudomorphic HEMTs 129
Anomalous impact ionization gate current in high breakdown InP-based HEMTs 128
Interactions between DX centers and hot electrons and holes in AlGaAs/GaAs heterostructure field-effect transistors 127
Studies on charge collection and transport properties on semi-insulating materials in the presence of a non-uniform electric field 127
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 126
Influence of long-term dc-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 124
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence 124
Advanced physically based device modeling for gate current and hot carrier phenomena in scaled MOSFETs 122
La formazione degli insegnanti del PLS-Fisica negli ultimi cinque anni 122
Charge collection in semi-insulator radiation detectors in the presence of a linear decreasing electric field 120
Evaluation of electric field profile and transport parameters in solid-state CZT detectors 119
On the role of Boron in CdTe and CdZnTe crystals 119
Ambito C - Un percorso di formazione insegnanti: Il moto circolare - Section C - A teacher training course: The circular motion 118
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 118
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 118
Effect of Heterojunction Characteristics and Deep Electronic Levels on the Performance of (Cd,Zn)S/Sb2Se3 Solar Cells 118
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 117
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements 117
An original method to evaluate the transport parameters and reconstruct the electric field in solid-state photodetectors 117
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 116
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material 116
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 113
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 113
A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors 112
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's 112
CZT X-rays detectors obtained by the boron encapsulated vertical Bridgman method 112
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs 110
Oriented orthorhombic Lead Oxide film grown by vapour phase for X-ray detector applications 110
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material 110
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime 109
A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs 108
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy 108
Color matching for color constancy and inconstancy in the transition between foveal vision and extra-macular vision 108
Off-State Breakdown in GaAs Power HFETs 107
DC and RF instability of GaAs-based PHEMTs due to hot electrons 106
Effect of lithium diffusion into Ga2O3 thin films 104
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman Technique 104
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique 104
IO, DOVE E QUANDO? 103
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 101
Electroluminescence and gate current components of InAlAs/InGaAs HFETs 101
Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy 100
On the correlation between drain and gate currents and light emission in GaAs – PHEMTs biased in the impact ionization regime 98
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs 98
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 98
Characterization of 6H-SiC JFET by means of hot carrier induced electroluminescence 97
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices 96
Study of Surface Treatment Effects on the Metal-CdZnTe Interface 96
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth 94
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors 92
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 91
Experimental analysis of polarization in the hot-carrier luminescence of Silicon devices 91
Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs 91
High-temperature failure of GaN LEDs related with passivation 90
Branched gold nanoparticles on ZnO 3D architecture as biomedical SERS sensors 89
An overview of physics teacher professional development activities organized within the Italian PLS-Physics plan over the past five years 88
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing 88
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 88
1919: L'eclissi che ha cambiato il mondo - 1919: The eclipse that changed the world 87
Enhanced luminescence of CuCl microcrystals in an organic-inorganic hybrid matrix 87
Cathode hot electrons and anode hot holes in tunneling MOS capacitors 87
Le questioni affrontate durante il convegno ``Quale didattica della fisica per formare gli insegnanti di scuola primaria?'' - Which kind of physics education for prospective primary teachers? 86
Diagnosis of trapping phenomena in GaN MESFETs 86
Hysteresis loop and cross-talk of organic memristive devices 85
Reliability of deep-UV Light-Emitting Diodes 85
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 84
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 84
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes 84
New measures of the color-matching function in foveal vision 84
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence 83
Electroluminescence analysis of HFET’s breakdown 83
Verification of electron distribution in silicon by means of hot-carrier luminescence measurements 82
Tetravalent element doping of β-Ga₂O₃ films grown by pulsed electron deposition technique 81
Study of Surface Treatment Effects on the Metal-CdZnTe Interface 81
Grassmann’s laws and individual color-matching functions for non-spectral primaries evaluated by maximum saturation technique in foveal vision 80
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 80
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 78
Totale 11.573
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Categoria #
all - tutte 43.626
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.626
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021445 0 0 0 0 0 22 77 63 136 45 88 14
2021/2022528 24 12 3 39 37 19 63 71 25 54 53 128
2022/20231.770 187 169 103 167 132 220 26 115 562 22 55 12
2023/2024890 48 67 17 34 69 223 81 62 30 92 58 109
2024/20253.265 59 142 149 275 389 444 200 214 381 251 243 518
2025/20263.709 605 592 875 552 873 212 0 0 0 0 0 0
Totale 12.769