IRIS
PAVESI, Maura
 Distribuzione geografica
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Continente #
NA - Nord America 3.290
EU - Europa 2.682
AS - Asia 1.857
SA - Sud America 268
AF - Africa 33
Continente sconosciuto - Info sul continente non disponibili 8
OC - Oceania 3
Totale 8.141
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Nazione #
US - Stati Uniti d'America 3.231
CN - Cina 943
SG - Singapore 707
IT - Italia 497
IE - Irlanda 458
SE - Svezia 414
UA - Ucraina 335
FI - Finlandia 303
BR - Brasile 241
DE - Germania 223
NL - Olanda 153
TR - Turchia 93
FR - Francia 78
RU - Federazione Russa 71
CA - Canada 54
GB - Regno Unito 41
BE - Belgio 29
AT - Austria 24
IN - India 19
HK - Hong Kong 14
JP - Giappone 13
ID - Indonesia 11
KR - Corea 9
PL - Polonia 9
BD - Bangladesh 8
EU - Europa 8
CZ - Repubblica Ceca 7
EC - Ecuador 7
RO - Romania 7
LT - Lituania 6
AR - Argentina 5
CI - Costa d'Avorio 5
IQ - Iraq 5
MA - Marocco 5
NG - Nigeria 5
UZ - Uzbekistan 5
BG - Bulgaria 4
CM - Camerun 4
CO - Colombia 4
ES - Italia 4
MX - Messico 4
PK - Pakistan 4
TN - Tunisia 4
AZ - Azerbaigian 3
DZ - Algeria 3
JO - Giordania 3
LK - Sri Lanka 3
LV - Lettonia 3
NO - Norvegia 3
PY - Paraguay 3
VE - Venezuela 3
ZA - Sudafrica 3
AE - Emirati Arabi Uniti 2
AU - Australia 2
BO - Bolivia 2
EE - Estonia 2
EG - Egitto 2
HR - Croazia 2
IR - Iran 2
KE - Kenya 2
LB - Libano 2
NP - Nepal 2
PE - Perù 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
AL - Albania 1
BN - Brunei Darussalam 1
CH - Svizzera 1
GT - Guatemala 1
IL - Israele 1
IM - Isola di Man 1
IS - Islanda 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
MN - Mongolia 1
NZ - Nuova Zelanda 1
OM - Oman 1
PH - Filippine 1
QA - Qatar 1
UY - Uruguay 1
VN - Vietnam 1
Totale 8.141
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Città #
Chandler 489
Dublin 457
Santa Clara 407
Singapore 396
Jacksonville 344
Ashburn 255
Ann Arbor 234
Beijing 230
Parma 153
Dearborn 135
Boardman 127
Nanjing 120
Shanghai 95
Princeton 93
New York 75
Helsinki 74
Los Angeles 74
San Mateo 74
Izmir 59
Wilmington 59
Marseille 56
Moscow 49
Council Bluffs 43
Shenyang 43
Kunming 42
Toronto 42
Nanchang 40
Hefei 33
Brussels 29
Hebei 29
Jinan 27
Milan 26
The Dalles 24
Woodbridge 21
Changsha 19
Des Moines 18
Houston 18
Vienna 18
Amsterdam 17
Jiaxing 17
Seattle 17
Tianjin 17
São Paulo 16
Rome 15
Strasbourg 15
Guangzhou 14
Kocaeli 14
Modena 13
Norwalk 13
Zhengzhou 13
Falkenstein 12
Jakarta 11
Rio de Janeiro 11
Hong Kong 10
Washington 10
Florence 9
Grafing 9
Istanbul 9
Nuremberg 9
Ottawa 9
Warsaw 9
Bremen 8
Phoenix 8
Segrate 8
Belo Horizonte 7
Catania 7
Hangzhou 7
Reggio Emilia 7
Reggio Nell'emilia 7
Campinas 6
Dolianova 6
Fremont 6
San Lazzaro di Savena 6
Suwon 6
Tokyo 6
Abidjan 5
Berlin 5
Brasília 5
Castellarano 5
Civitavecchia 5
Dallas 5
Falls Church 5
Fuzhou 5
Heidelberg 5
Lagos 5
London 5
Mumbai 5
Silver Spring 5
Tashkent 5
Trieste 5
Auburn Hills 4
Frankfurt am Main 4
Lanzhou 4
Madrid 4
Newark 4
Novi di Modena 4
Pune 4
Santo Stefano di Cadore 4
Scandicci 4
Taizhou 4
Totale 5.026
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 165
Atti del 105° Congresso Nazionale - SIF Società Italiana di Fisica 159
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 153
Thermal stability of ε-Ga2O3 polymorph 149
Electron and hole-related luminescence processes in Gate Injection Transistors 133
Effects of composition and catalyst on the optical properties of ZrO2-based Ormosils films 128
Growth and Characterization of CZT Crystals by the Vertical Bridgman Method for X-ray Detector Applications 125
Electric field reconstruction and transport parameter evaluation in CZT X-ray detectors 123
Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals 110
Band to band recombination peak in the light emission of commercial pseudomorphic HEMTs 110
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 110
Overcoming the planar contact geometry limitation for the measurement of transport properties and electric field distribution in X- and gamma ray detectors 108
Improved electroless platinum contacts on CdZnTe X- and γ-rays detectors 107
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques 105
Role of Zirconium on the structural film evolution and on the optical properties of sol-gel hybrid organic/inorganic glass films 102
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 101
Influence of long-term dc-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 101
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth 100
Accelerated Life Test of High Brightness Light Emitting Diodes 99
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's 99
La formazione degli insegnanti del PLS-Fisica negli ultimi cinque anni 99
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 99
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 98
Studies on charge collection and transport properties on semi-insulating materials in the presence of a non-uniform electric field 96
Interactions between DX centers and hot electrons and holes in AlGaAs/GaAs heterostructure field-effect transistors 93
Anomalous impact ionization gate current in high breakdown InP-based HEMTs 88
Oriented orthorhombic Lead Oxide film grown by vapour phase for X-ray detector applications 87
CZT X-rays detectors obtained by the boron encapsulated vertical Bridgman method 85
Two-step thermal process in tellurium vapor for tellurium inclusion annealing in high resistivity CdZnTe crystals 83
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 82
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime 82
A study of hot electron degradation effects in pseudomorphic HEMTs 82
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material 82
Off-State Breakdown in GaAs Power HFETs 82
Color matching for color constancy and inconstancy in the transition between foveal vision and extra-macular vision 82
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman Technique 80
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs 79
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements 79
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 78
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 77
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices 77
Charge collection in semi-insulator radiation detectors in the presence of a linear decreasing electric field 77
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique 77
Advanced physically based device modeling for gate current and hot carrier phenomena in scaled MOSFETs 77
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's 76
DC and RF instability of GaAs-based PHEMTs due to hot electrons 76
On the correlation between drain and gate currents and light emission in GaAs – PHEMTs biased in the impact ionization regime 76
On the role of Boron in CdTe and CdZnTe crystals 76
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material 75
Electroluminescence and gate current components of InAlAs/InGaAs HFETs 75
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence 75
Evaluation of electric field profile and transport parameters in solid-state CZT detectors 74
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy 74
Experimental analysis of polarization in the hot-carrier luminescence of Silicon devices 73
A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs 73
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 73
IO, DOVE E QUANDO? 72
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors 72
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs 72
A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors 71
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 71
Characterization of 6H-SiC JFET by means of hot carrier induced electroluminescence 71
Study of Surface Treatment Effects on the Metal-CdZnTe Interface 67
New measures of the color-matching function in foveal vision 66
Ambito C - Un percorso di formazione insegnanti: Il moto circolare - Section C - A teacher training course: The circular motion 65
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth 65
An original method to evaluate the transport parameters and reconstruct the electric field in solid-state photodetectors 65
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing 64
Cathode hot electrons and anode hot holes in tunneling MOS capacitors 64
Verification of electron distribution in silicon by means of hot-carrier luminescence measurements 64
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 64
Branched gold nanoparticles on ZnO 3D architecture as biomedical SERS sensors 63
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 63
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 62
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence 62
Electroluminescence analysis of HFET’s breakdown 62
Diagnosis of trapping phenomena in GaN MESFETs 61
Grassmann’s laws and individual color-matching functions for non-spectral primaries evaluated by maximum saturation technique in foveal vision 60
Leakage current and reverse-bias luminescence in InGaN base light-emitting diodes 60
Enhanced luminescence of CuCl microcrystals in an organic-inorganic hybrid matrix 60
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 59
Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs 59
Study of Surface Treatment Effects on the Metal-CdZnTe Interface 58
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 58
Reliability of deep-UV Light-Emitting Diodes 56
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 56
Monitoring hot-carrier degradation in SOI MOSFET’s by hot-carrier luminescence techniques 55
Optical evidence of an electro-thermal threshold in the degradation of InGaN-based LEDs during electrical stress 55
Funzioni colorimetriche in visione fotopica periferica e foveale 55
The role of Mg complexes in the degradation of InGaN-based LEDs 54
High-temperature failure of GaN LEDs related with passivation 54
Hysteresis loop and cross-talk of organic memristive devices 54
An overview of physics teacher professional development activities organized within the Italian PLS-Physics plan over the past five years 51
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes 51
Light emission measurements: a promising tool to identify hot carrier phenomena 51
Le questioni affrontate durante il convegno ``Quale didattica della fisica per formare gli insegnanti di scuola primaria?'' - Which kind of physics education for prospective primary teachers? 50
Colour constancy and inconstancy related to foveal and extramacular vision. 48
Effects of extreme DC-aging and electron-beam irradiation in InGaN/AlGaN/GaN light emitting diodes 47
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 44
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 44
Totale 7.929
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Categoria #
all - tutte 32.110
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 32.110
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020140 0 0 0 0 0 0 0 0 0 0 69 71
2020/2021697 8 81 71 18 74 22 77 63 136 45 88 14
2021/2022528 24 12 3 39 37 19 63 71 25 54 53 128
2022/20231.770 187 169 103 167 132 220 26 115 562 22 55 12
2023/2024890 48 67 17 34 69 223 81 62 30 92 58 109
2024/20252.538 59 142 149 275 389 444 200 214 381 251 34 0
Totale 8.333