IRIS
PAVESI, Maura
 Distribuzione geografica
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Continente #
NA - Nord America 5.765
AS - Asia 4.977
EU - Europa 3.373
SA - Sud America 703
AF - Africa 255
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 9
Totale 15.091
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Nazione #
US - Stati Uniti d'America 5.602
SG - Singapore 1.781
CN - Cina 1.457
IT - Italia 702
VN - Vietnam 695
BR - Brasile 552
IE - Irlanda 461
SE - Svezia 425
HK - Hong Kong 399
UA - Ucraina 344
FI - Finlandia 327
DE - Germania 323
FR - Francia 210
ZA - Sudafrica 167
NL - Olanda 165
GB - Regno Unito 118
TR - Turchia 114
RU - Federazione Russa 111
BD - Bangladesh 110
CA - Canada 98
IN - India 85
AR - Argentina 50
KR - Corea 44
IQ - Iraq 43
JP - Giappone 43
MX - Messico 42
PK - Pakistan 36
EC - Ecuador 31
AT - Austria 30
BE - Belgio 30
ES - Italia 30
PL - Polonia 28
CO - Colombia 24
ID - Indonesia 24
PH - Filippine 23
MA - Marocco 17
PY - Paraguay 16
TN - Tunisia 16
UZ - Uzbekistan 14
VE - Venezuela 14
AE - Emirati Arabi Uniti 12
JO - Giordania 12
CZ - Repubblica Ceca 10
DZ - Algeria 10
KE - Kenya 10
LT - Lituania 10
TH - Thailandia 9
EG - Egitto 8
EU - Europa 8
NG - Nigeria 8
AU - Australia 7
CI - Costa d'Avorio 7
KZ - Kazakistan 7
NP - Nepal 7
PT - Portogallo 7
RO - Romania 7
SA - Arabia Saudita 7
TW - Taiwan 7
LB - Libano 6
TT - Trinidad e Tobago 6
AZ - Azerbaigian 5
BG - Bulgaria 5
IL - Israele 5
PE - Perù 5
AL - Albania 4
CL - Cile 4
CM - Camerun 4
CR - Costa Rica 4
HR - Croazia 4
IR - Iran 4
LK - Sri Lanka 4
LV - Lettonia 4
MY - Malesia 4
QA - Qatar 4
SY - Repubblica araba siriana 4
UY - Uruguay 4
ET - Etiopia 3
JM - Giamaica 3
NO - Norvegia 3
SN - Senegal 3
BO - Bolivia 2
CH - Svizzera 2
EE - Estonia 2
GE - Georgia 2
GT - Guatemala 2
MN - Mongolia 2
OM - Oman 2
PA - Panama 2
SK - Slovacchia (Repubblica Slovacca) 2
AO - Angola 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BH - Bahrain 1
BN - Brunei Darussalam 1
CG - Congo 1
DO - Repubblica Dominicana 1
GI - Gibilterra 1
GR - Grecia 1
GY - Guiana 1
HN - Honduras 1
Totale 15.075
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Città #
Singapore 870
Ashburn 752
San Jose 565
Chandler 489
Dublin 460
Santa Clara 439
Dallas 419
Hong Kong 381
Beijing 365
Jacksonville 345
Ann Arbor 234
Ho Chi Minh City 221
Parma 182
Hanoi 169
Los Angeles 168
Boardman 167
Johannesburg 156
Dearborn 135
New York 122
Nanjing 120
Hefei 106
Lauterbourg 105
Shanghai 101
Princeton 93
Munich 81
Council Bluffs 79
Helsinki 75
San Mateo 74
Wilmington 60
Izmir 59
Marseille 56
Toronto 55
Columbus 54
Moscow 51
Buffalo 48
São Paulo 46
Shenyang 44
Kunming 43
The Dalles 41
Nanchang 40
Milan 33
Da Nang 32
Haiphong 32
Tokyo 30
Brussels 29
Hebei 29
Rio de Janeiro 29
Seoul 29
Jinan 28
Houston 26
Warsaw 26
Amsterdam 25
London 23
Turku 23
Rome 22
Seattle 22
Tianjin 22
Vienna 22
Woodbridge 21
Changsha 20
Atlanta 19
Orem 19
Phoenix 19
Biên Hòa 18
Des Moines 18
Guangzhou 18
Poplar 18
Baghdad 17
Jiaxing 17
Frankfurt am Main 16
Reggio Emilia 16
Bengaluru 15
Bologna 15
Brooklyn 15
Istanbul 15
San Francisco 15
Strasbourg 15
Genoa 14
Jakarta 14
Kocaeli 14
Modena 14
Tashkent 14
Zhengzhou 14
Chennai 13
Chicago 13
Denver 13
Falkenstein 13
Florence 13
Mexico City 13
Montreal 13
Norwalk 13
Stockholm 13
Amman 12
Ankara 12
Nuremberg 11
Boston 10
Curitiba 10
Hải Dương 10
Lahore 10
New Delhi 10
Totale 9.164
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 262
Atti del 105° Congresso Nazionale - SIF Società Italiana di Fisica 256
Thermal stability of ε-Ga2O3 polymorph 227
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 224
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 223
Growth and Characterization of CZT Crystals by the Vertical Bridgman Method for X-ray Detector Applications 199
Effects of composition and catalyst on the optical properties of ZrO2-based Ormosils films 192
Improved electroless platinum contacts on CdZnTe X- and γ-rays detectors 187
Overcoming the planar contact geometry limitation for the measurement of transport properties and electric field distribution in X- and gamma ray detectors 185
Electric field reconstruction and transport parameter evaluation in CZT X-ray detectors 183
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 183
Electron and hole-related luminescence processes in Gate Injection Transistors 182
Band to band recombination peak in the light emission of commercial pseudomorphic HEMTs 175
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 173
Tetravalent element doping of β-Ga₂O₃ films grown by pulsed electron deposition technique 171
Accelerated Life Test of High Brightness Light Emitting Diodes 168
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's 167
Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals 165
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 165
La formazione degli insegnanti del PLS-Fisica negli ultimi cinque anni 155
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 153
Role of Zirconium on the structural film evolution and on the optical properties of sol-gel hybrid organic/inorganic glass films 153
Two-step thermal process in tellurium vapor for tellurium inclusion annealing in high resistivity CdZnTe crystals 153
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques 152
Studies on charge collection and transport properties on semi-insulating materials in the presence of a non-uniform electric field 152
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 151
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 149
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 148
Anomalous impact ionization gate current in high breakdown InP-based HEMTs 147
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth 146
A study of hot electron degradation effects in pseudomorphic HEMTs 145
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications 144
Charge collection in semi-insulator radiation detectors in the presence of a linear decreasing electric field 144
Effect of Heterojunction Characteristics and Deep Electronic Levels on the Performance of (Cd,Zn)S/Sb2Se3 Solar Cells 144
Ambito C - Un percorso di formazione insegnanti: Il moto circolare - Section C - A teacher training course: The circular motion 143
Evaluation of electric field profile and transport parameters in solid-state CZT detectors 143
Influence of long-term dc-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 143
Interactions between DX centers and hot electrons and holes in AlGaAs/GaAs heterostructure field-effect transistors 143
Effect of lithium diffusion into Ga2O3 thin films 142
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 141
Advanced physically based device modeling for gate current and hot carrier phenomena in scaled MOSFETs 140
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence 138
Oriented orthorhombic Lead Oxide film grown by vapour phase for X-ray detector applications 137
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 136
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements 135
On the role of Boron in CdTe and CdZnTe crystals 135
Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy 134
A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors 133
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy 133
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 132
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's 131
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors 130
CZT X-rays detectors obtained by the boron encapsulated vertical Bridgman method 128
An original method to evaluate the transport parameters and reconstruct the electric field in solid-state photodetectors 128
A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs 126
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 125
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime 125
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs 125
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material 125
DC and RF instability of GaAs-based PHEMTs due to hot electrons 124
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material 123
Color matching for color constancy and inconstancy in the transition between foveal vision and extra-macular vision 122
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique 121
IO, DOVE E QUANDO? 120
Off-State Breakdown in GaAs Power HFETs 120
On the correlation between drain and gate currents and light emission in GaAs – PHEMTs biased in the impact ionization regime 119
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 117
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman Technique 116
Electroluminescence and gate current components of InAlAs/InGaAs HFETs 116
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 113
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs 110
1919: L'eclissi che ha cambiato il mondo - 1919: The eclipse that changed the world 109
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices 108
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing 108
Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study 108
An overview of physics teacher professional development activities organized within the Italian PLS-Physics plan over the past five years 107
null 107
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors 107
Study of Surface Treatment Effects on the Metal-CdZnTe Interface 107
Characterization of 6H-SiC JFET by means of hot carrier induced electroluminescence 107
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence 105
Experimental analysis of polarization in the hot-carrier luminescence of Silicon devices 105
High-temperature failure of GaN LEDs related with passivation 105
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth 105
Le questioni affrontate durante il convegno ``Quale didattica della fisica per formare gli insegnanti di scuola primaria?'' - Which kind of physics education for prospective primary teachers? 104
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 102
Cathode hot electrons and anode hot holes in tunneling MOS capacitors 102
Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs 102
Branched gold nanoparticles on ZnO 3D architecture as biomedical SERS sensors 101
Study of Surface Treatment Effects on the Metal-CdZnTe Interface 101
Diagnosis of trapping phenomena in GaN MESFETs 100
Hysteresis loop and cross-talk of organic memristive devices 99
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes 99
Reliability of deep-UV Light-Emitting Diodes 99
Enhanced luminescence of CuCl microcrystals in an organic-inorganic hybrid matrix 98
Funzioni colorimetriche in visione fotopica periferica e foveale 98
Electroluminescence analysis of HFET’s breakdown 97
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 97
New measures of the color-matching function in foveal vision 96
Grassmann’s laws and individual color-matching functions for non-spectral primaries evaluated by maximum saturation technique in foveal vision 94
Totale 13.672
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Categoria #
all - tutte 50.570
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 50.570
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202114 0 0 0 0 0 0 0 0 0 0 0 14
2021/2022528 24 12 3 39 37 19 63 71 25 54 53 128
2022/20231.770 187 169 103 167 132 220 26 115 562 22 55 12
2023/2024890 48 67 17 34 69 223 81 62 30 92 58 109
2024/20253.265 59 142 149 275 389 444 200 214 381 251 243 518
2025/20266.231 605 592 875 552 873 356 686 194 619 567 173 139
Totale 15.291