This paper presents a detailed study on hot-carrier induced luminescence and degradation of BULK and partially depleted SOI MOSFETs fabricated in the same wafer run, hence with directly comparable device parameters. In particular, we analyze the bias and energy (E) dependence of emission in virgin transistors, and its correlation with hot-carrier induced degradation.

A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs / L., Selmi; Pavesi, Maura; H. S., Wong; A., Acovic; E., Sangiorgi. - ELETTRONICO. - 5248823:(1995), pp. 49-52. (Intervento presentato al convegno International Electron Devices Meeting 1995, IEDM '95 tenutosi a Washington, DC, USA nel 10-13 Dec 1995) [10.1109/IEDM.1995.497180].

A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs

PAVESI, Maura;
1995-01-01

Abstract

This paper presents a detailed study on hot-carrier induced luminescence and degradation of BULK and partially depleted SOI MOSFETs fabricated in the same wafer run, hence with directly comparable device parameters. In particular, we analyze the bias and energy (E) dependence of emission in virgin transistors, and its correlation with hot-carrier induced degradation.
1995
0780327004
A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs / L., Selmi; Pavesi, Maura; H. S., Wong; A., Acovic; E., Sangiorgi. - ELETTRONICO. - 5248823:(1995), pp. 49-52. (Intervento presentato al convegno International Electron Devices Meeting 1995, IEDM '95 tenutosi a Washington, DC, USA nel 10-13 Dec 1995) [10.1109/IEDM.1995.497180].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/1498147
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