Traps govern the temperature dependence of current in III-nitride quantum heterostructures, but frequently electrical measurements result unable to identify how many and what kind of defects take part in the conduction. The present work shows how a combined electrical and optical characterization in temperature can detect localized defects involved in injection mechanisms in InGaN∕AlGaN∕GaNInGaN∕AlGaN∕GaN blue light lmitting diodes. At least two different traps assisting the carrier injection by tunneling and playing an active role below and above 175K175K, respectively, are identified in or nearby the active layers.
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes / Pavesi, Maura; Manfredi, Manfredo; F., Rossi; M., Meneghini; E., Zanoni; U., Zehnder; U., Strauss. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 89:4(2006), p. 041917. [10.1063/1.2240309]
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes
PAVESI, Maura;MANFREDI, Manfredo;
2006-01-01
Abstract
Traps govern the temperature dependence of current in III-nitride quantum heterostructures, but frequently electrical measurements result unable to identify how many and what kind of defects take part in the conduction. The present work shows how a combined electrical and optical characterization in temperature can detect localized defects involved in injection mechanisms in InGaN∕AlGaN∕GaNInGaN∕AlGaN∕GaN blue light lmitting diodes. At least two different traps assisting the carrier injection by tunneling and playing an active role below and above 175K175K, respectively, are identified in or nearby the active layers.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
