In this work we have studied and characterized the impact-ionization-induced instabilities in the output characteristics of two-dimensional MESFET’s. The instabilities appear as an increase of the output conductance, gD. By performing a complete set of DC measurements at different temperature and electroluminescence measurements, in different bias conditions, we were able to correlate the kinks in the output characteristics with different impact ionization regimes, including the possible onset of a parasitic bipolar effect.
Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs / G., Meneghesso; A., Neviani; Pavesi, Maura; M., Hurt; W. C. B., Peatman; M., Shur; C., Canali; E., Zanoni. - ELETTRONICO. - (1997), pp. 724-727. (Intervento presentato al convegno 27th European Solid-State Device Research Conference ESSDERC ‘97 tenutosi a Stuttgart, Germany nel 22-24 September 1997).
Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs
PAVESI, Maura;
1997-01-01
Abstract
In this work we have studied and characterized the impact-ionization-induced instabilities in the output characteristics of two-dimensional MESFET’s. The instabilities appear as an increase of the output conductance, gD. By performing a complete set of DC measurements at different temperature and electroluminescence measurements, in different bias conditions, we were able to correlate the kinks in the output characteristics with different impact ionization regimes, including the possible onset of a parasitic bipolar effect.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
