The polarization of light emitted by hot-carriers in silicoin MOSFETs and special purpose test structures is analyzed by meanis of spectrally resolved polarization measurements. The experiments show a siginificant dependence of polarization on the structure and composition of the materials covering the emission area. The results demonstrate that the polarization of hot-carrier light in MOSFETs cannot provide direct indications on the role of different emission mechanisms or on the hot carrier momentum-space distribution, unless the effect of the layers on top of the emission area is appropriately taken into account.
Experimental analysis of polarization in the hot-carrier luminescence of Silicon devices / L., S., A., P., M., L., Pavesi, M., R., B., E., S.. - ELETTRONICO. - (1994), pp. 421-424. (24th European Solid-State Device Research Conference ESSDERC ‘94 Edinburgh, Scotland 11-15 Sept. 1994).
Experimental analysis of polarization in the hot-carrier luminescence of Silicon devices
PAVESI, Maura;
1994-01-01
Abstract
The polarization of light emitted by hot-carriers in silicoin MOSFETs and special purpose test structures is analyzed by meanis of spectrally resolved polarization measurements. The experiments show a siginificant dependence of polarization on the structure and composition of the materials covering the emission area. The results demonstrate that the polarization of hot-carrier light in MOSFETs cannot provide direct indications on the role of different emission mechanisms or on the hot carrier momentum-space distribution, unless the effect of the layers on top of the emission area is appropriately taken into account.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
