The polarization of light emitted by hot-carriers in silicoin MOSFETs and special purpose test structures is analyzed by meanis of spectrally resolved polarization measurements. The experiments show a siginificant dependence of polarization on the structure and composition of the materials covering the emission area. The results demonstrate that the polarization of hot-carrier light in MOSFETs cannot provide direct indications on the role of different emission mechanisms or on the hot carrier momentum-space distribution, unless the effect of the layers on top of the emission area is appropriately taken into account.
Experimental analysis of polarization in the hot-carrier luminescence of Silicon devices / L., Selmi; A., Pieracci; M., Lanzoni; Pavesi, Maura; R., Bez; E., Sangiorgi. - ELETTRONICO. - (1994), pp. 421-424. (Intervento presentato al convegno 24th European Solid-State Device Research Conference ESSDERC ‘94 tenutosi a Edinburgh, Scotland nel 11-15 Sept. 1994).
Experimental analysis of polarization in the hot-carrier luminescence of Silicon devices
PAVESI, Maura;
1994-01-01
Abstract
The polarization of light emitted by hot-carriers in silicoin MOSFETs and special purpose test structures is analyzed by meanis of spectrally resolved polarization measurements. The experiments show a siginificant dependence of polarization on the structure and composition of the materials covering the emission area. The results demonstrate that the polarization of hot-carrier light in MOSFETs cannot provide direct indications on the role of different emission mechanisms or on the hot carrier momentum-space distribution, unless the effect of the layers on top of the emission area is appropriately taken into account.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
