CdZnTe crystals doped with indium were grown by the boron oxide vertical Bridgman technique, with a diameter of 2-inches. The crystals showed large single crystalline yield and low etch pit density. The background impurity content was dominated by boron in concentration lower than 1 ppm. High resistivity was obtained and a procedure for contact preparation was developed. The mobility-lifetime product of the material was determined by both X-ray irradiation and photocurrent spectroscopy. The X-ray detector prepared with this material showed good spectroscopic characteristics.
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material / A., Zappettini; M., Zha; L., Marchini; D., Calestani; R., Mosca; E., Gombia; L., Zanotti; M., Zanichelli; Pavesi, Maura; N., Auricchio; E., Caroli. - ELETTRONICO. - R05-1:(2008), pp. 118-121. (Intervento presentato al convegno IEEE Nuclear Science Symposium Conference 2008 tenutosi a Dresden - Germany nel 19 - 25 October 2008) [10.1109/NSSMIC.2008.4775136].
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material
PAVESI, Maura;
2008-01-01
Abstract
CdZnTe crystals doped with indium were grown by the boron oxide vertical Bridgman technique, with a diameter of 2-inches. The crystals showed large single crystalline yield and low etch pit density. The background impurity content was dominated by boron in concentration lower than 1 ppm. High resistivity was obtained and a procedure for contact preparation was developed. The mobility-lifetime product of the material was determined by both X-ray irradiation and photocurrent spectroscopy. The X-ray detector prepared with this material showed good spectroscopic characteristics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
