CdZnTe crystals doped with indium were grown by the boron oxide vertical Bridgman technique, with a diameter of 2-inches. The crystals showed large single crystalline yield and low etch pit density. The background impurity content was dominated by boron in concentration lower than 1 ppm. High resistivity was obtained and a procedure for contact preparation was developed. The mobility-lifetime product of the material was determined by both X-ray irradiation and photocurrent spectroscopy. The X-ray detector prepared with this material showed good spectroscopic characteristics.
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material / A., Z., M., Z., L., M., D., C., R., M., E., G., L., Z., M., Z., Pavesi, M., N., A., E., C.. - ELETTRONICO. - R05-1:(2008), pp. 118-121. (IEEE Nuclear Science Symposium Conference 2008 Dresden - Germany 19 - 25 October 2008) [10.1109/NSSMIC.2008.4775136].
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material
PAVESI, Maura;
2008-01-01
Abstract
CdZnTe crystals doped with indium were grown by the boron oxide vertical Bridgman technique, with a diameter of 2-inches. The crystals showed large single crystalline yield and low etch pit density. The background impurity content was dominated by boron in concentration lower than 1 ppm. High resistivity was obtained and a procedure for contact preparation was developed. The mobility-lifetime product of the material was determined by both X-ray irradiation and photocurrent spectroscopy. The X-ray detector prepared with this material showed good spectroscopic characteristics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
