Similarly to inorganic memristors, the organic memristive devices reveal a variation of the hysteresis loop upon the frequency of the applied bias voltage. The on/off ratio of the conductivity increases from 4 to 1000 times for the variation of time delay (equilibration after the application of the voltage increment) from 5 to 60 s. Being implemented in multi-element electrical circuits memristive devices provide a cross-talk, leading to an equilibration trend of the conductivity values. This effect is mainly related to the formation of stable signal pathways.
Hysteresis loop and cross-talk of organic memristive devices / Dimonte, Alice; Berzina, Tatiana; Pavesi, Maura; Erokhin, Victor. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - 45:11(2014), pp. 1396-1400. [10.1016/j.mejo.2014.09.009]
Hysteresis loop and cross-talk of organic memristive devices
DIMONTE, ALICE;PAVESI, Maura;
2014-01-01
Abstract
Similarly to inorganic memristors, the organic memristive devices reveal a variation of the hysteresis loop upon the frequency of the applied bias voltage. The on/off ratio of the conductivity increases from 4 to 1000 times for the variation of time delay (equilibration after the application of the voltage increment) from 5 to 60 s. Being implemented in multi-element electrical circuits memristive devices provide a cross-talk, leading to an equilibration trend of the conductivity values. This effect is mainly related to the formation of stable signal pathways.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
