In this work we present results related to the current/voltage characteristics collapse in GaN MESFETs. Two different failure mechanisms were observed, one of them clearly consists in a positive threshold voltage shift. Traps responsible for the "current collapse" were also characterized by means of different measurement techniques. Phototransient experiments show the presence of a capture barrier of 0.1 eV while by a spectroscopic technique four photoionization energy levels were estimated. Finally, electroluminescence measurements show the presence of visible and UV light, suggesting the presence of a self-recovery mechanisms.
Diagnosis of trapping phenomena in GaN MESFETs / G., Meneghesso; A., Chini; E., Zanoni; M., Manfredi; Pavesi, Maura; B., Boudart; C., Gaquiere. - ELETTRONICO. - (2000), pp. 389-392. (Intervento presentato al convegno International Electron Devices Meeting 2000. Technical Digest. IEDM tenutosi a San Francisco, CA, USA nel 10-13 Dec. 2000) [10.1109/IEDM.2000.904338].
Diagnosis of trapping phenomena in GaN MESFETs
PAVESI, Maura;
2000-01-01
Abstract
In this work we present results related to the current/voltage characteristics collapse in GaN MESFETs. Two different failure mechanisms were observed, one of them clearly consists in a positive threshold voltage shift. Traps responsible for the "current collapse" were also characterized by means of different measurement techniques. Phototransient experiments show the presence of a capture barrier of 0.1 eV while by a spectroscopic technique four photoionization energy levels were estimated. Finally, electroluminescence measurements show the presence of visible and UV light, suggesting the presence of a self-recovery mechanisms.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
