Short-term accelerated life test activity on high brightness light emitting diodes is reported. Two families of 1-W light-emitting diodes (LEDs) from different manufacturers were submitted to distinct stress conditions: high temperature storage without bias and high dc current test. During aging, degradation mechanisms like light output decay and electrical property worsening were detected. In particular, the degradation in light efficiency induced by thermal storage was found to follow an exponential law, and the activation energy of the process was extrapolated. Aged devices exhibited a modification of the package epoxy color from white to brown. The instability of the package contributes to the overall degradation in terms of optical and spectral properties. In addition, an increase in thermal resistance was detected on one family of LEDs. This increase induces higher junction temperature levels during operative conditions. In order to correlate the degradation mechanisms and kinetics found during thermal stress, a high dc current stress was performed. Results from this comparative analysis showed similar behavior, implying that the degradation process of dc current aged devices is thermal activated due to high temperatures reached by the junction during stress. Finally, the different effects of the stress on two families of LEDs were taken into account in order to identify the impact of aging on device structure.

Accelerated Life Test of High Brightness Light Emitting Diodes / L., Trevisanello; M., Meneghini; G., Mura; M., Vanzi; Pavesi, Maura; G., Meneghesso; E., Zanoni. - In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. - ISSN 1530-4388. - 8:2(2008), pp. 304-311. [10.1109/TDMR.2008.919596]

Accelerated Life Test of High Brightness Light Emitting Diodes

PAVESI, Maura;
2008-01-01

Abstract

Short-term accelerated life test activity on high brightness light emitting diodes is reported. Two families of 1-W light-emitting diodes (LEDs) from different manufacturers were submitted to distinct stress conditions: high temperature storage without bias and high dc current test. During aging, degradation mechanisms like light output decay and electrical property worsening were detected. In particular, the degradation in light efficiency induced by thermal storage was found to follow an exponential law, and the activation energy of the process was extrapolated. Aged devices exhibited a modification of the package epoxy color from white to brown. The instability of the package contributes to the overall degradation in terms of optical and spectral properties. In addition, an increase in thermal resistance was detected on one family of LEDs. This increase induces higher junction temperature levels during operative conditions. In order to correlate the degradation mechanisms and kinetics found during thermal stress, a high dc current stress was performed. Results from this comparative analysis showed similar behavior, implying that the degradation process of dc current aged devices is thermal activated due to high temperatures reached by the junction during stress. Finally, the different effects of the stress on two families of LEDs were taken into account in order to identify the impact of aging on device structure.
2008
Accelerated Life Test of High Brightness Light Emitting Diodes / L., Trevisanello; M., Meneghini; G., Mura; M., Vanzi; Pavesi, Maura; G., Meneghesso; E., Zanoni. - In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. - ISSN 1530-4388. - 8:2(2008), pp. 304-311. [10.1109/TDMR.2008.919596]
File in questo prodotto:
File Dimensione Formato  
TDMR_2008.pdf

non disponibili

Descrizione: Articolo completo
Tipologia: Versione (PDF) editoriale
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 513.77 kB
Formato Adobe PDF
513.77 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/1837519
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 156
  • ???jsp.display-item.citation.isi??? 131
social impact