PAVESI, Maura
 Distribuzione geografica
Continente #
EU - Europa 144
AS - Asia 30
NA - Nord America 20
AF - Africa 3
Totale 197
Nazione #
IT - Italia 119
US - Stati Uniti d'America 19
JP - Giappone 16
IE - Irlanda 10
FR - Francia 7
SG - Singapore 5
IN - India 4
DE - Germania 3
GB - Regno Unito 3
CN - Cina 2
TN - Tunisia 2
CA - Canada 1
CZ - Repubblica Ceca 1
EG - Egitto 1
HK - Hong Kong 1
KR - Corea 1
RU - Federazione Russa 1
SY - Repubblica araba siriana 1
Totale 197
Città #
Parma 61
Dublin 10
Busseto 3
Kokubu 3
Kyoto 3
Ogaya 3
Paris 3
Slough 3
Tappahannock 3
Ōtsu 3
Bologna 2
Chennai 2
Chicago 2
Hasuda 2
Mcallen 2
Redmond 2
Reggio Emilia 2
Albany 1
Arezzo 1
Boulder 1
Bremen 1
Brescia 1
Buffalo 1
Caltanissetta 1
Casina 1
Central 1
Council Bluffs 1
Florence 1
Florissant 1
Fukui 1
Guangzhou 1
Hangzhou 1
Hyderabad 1
Manhattan 1
Milan 1
Pittsburgh 1
Rockville 1
Rome 1
San Giovanni Lupatoto 1
Scranton 1
Tokyo 1
Trichy 1
Totale 134
Nome #
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers, file e177fbc7-71eb-50b0-e053-d805fe0adaee 46
Electric field reconstruction and transport parameter evaluation in CZT X-ray detectors, file e177fbc7-58f7-50b0-e053-d805fe0adaee 21
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors, file e177fbc7-5853-50b0-e053-d805fe0adaee 15
Thermal stability of ε-Ga2O3 polymorph, file e177fbc7-7c18-50b0-e053-d805fe0adaee 10
Branched gold nanoparticles on ZnO 3D architecture as biomedical SERS sensors, file e177fbc5-aebc-50b0-e053-d805fe0adaee 9
On the correlation between drain and gate currents and light emission in GaAs – PHEMTs biased in the impact ionization regime, file e177fbc4-0f3f-50b0-e053-d805fe0adaee 7
A study of hot electron degradation effects in pseudomorphic HEMTs, file e177fbc4-0f40-50b0-e053-d805fe0adaee 6
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes, file e177fbc4-0fbd-50b0-e053-d805fe0adaee 2
Electroluminescence analysis of HFET’s breakdown, file e177fbc5-ae58-50b0-e053-d805fe0adaee 2
Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals, file e177fbc5-afd2-50b0-e053-d805fe0adaee 2
Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements, file e177fbc5-b719-50b0-e053-d805fe0adaee 2
Effects of composition and catalyst on the optical properties of ZrO2-based Ormosils films, file e177fbc5-bacf-50b0-e053-d805fe0adaee 2
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels, file e177fbc5-c13d-50b0-e053-d805fe0adaee 2
Off-State Breakdown in GaAs Power HFETs, file e177fbc5-c21a-50b0-e053-d805fe0adaee 2
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers, file abe6c2ac-a3c8-42e3-bc0f-85884448ca56 1
Optical evidence of an electro-thermal threshold in the degradation of InGaN-based LEDs during electrical stress, file e177fbc4-0f3e-50b0-e053-d805fe0adaee 1
Accelerated Life Test of High Brightness Light Emitting Diodes, file e177fbc4-1acb-50b0-e053-d805fe0adaee 1
Two-step thermal process in tellurium vapor for tellurium inclusion annealing in high resistivity CdZnTe crystals, file e177fbc5-af50-50b0-e053-d805fe0adaee 1
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes, file e177fbc5-af5a-50b0-e053-d805fe0adaee 1
The role of Mg complexes in the degradation of InGaN-based LEDs, file e177fbc5-af5f-50b0-e053-d805fe0adaee 1
Role of Zirconium on the structural film evolution and on the optical properties of sol-gel hybrid organic/inorganic glass films, file e177fbc5-af6d-50b0-e053-d805fe0adaee 1
Leakage current and reverse-bias luminescence in InGaN base light-emitting diodes, file e177fbc5-b022-50b0-e053-d805fe0adaee 1
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material, file e177fbc5-b024-50b0-e053-d805fe0adaee 1
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN LEDs, file e177fbc5-b027-50b0-e053-d805fe0adaee 1
Reliability of deep-UV Light-Emitting Diodes, file e177fbc5-b028-50b0-e053-d805fe0adaee 1
Grassmann’s laws and individual color-matching functions for non-spectral primaries evaluated by maximum saturation technique in foveal vision, file e177fbc5-b02a-50b0-e053-d805fe0adaee 1
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes, file e177fbc5-b02c-50b0-e053-d805fe0adaee 1
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth, file e177fbc5-b02e-50b0-e053-d805fe0adaee 1
Hysteresis loop and cross-talk of organic memristive devices, file e177fbc5-b046-50b0-e053-d805fe0adaee 1
Monitoring hot-carrier degradation in SOI MOSFET’s by hot-carrier luminescence techniques, file e177fbc5-b06b-50b0-e053-d805fe0adaee 1
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence, file e177fbc5-b08f-50b0-e053-d805fe0adaee 1
High-temperature failure of GaN LEDs related with passivation, file e177fbc5-b092-50b0-e053-d805fe0adaee 1
Effects of extreme DC-aging and electron-beam irradiation in InGaN/AlGaN/GaN light emitting diodes, file e177fbc5-b099-50b0-e053-d805fe0adaee 1
Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors, file e177fbc5-b09d-50b0-e053-d805fe0adaee 1
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET’s designed for microwave power applications, file e177fbc5-b0ca-50b0-e053-d805fe0adaee 1
Verification of electron distribution in silicon by means of hot-carrier luminescence measurements, file e177fbc5-b0d0-50b0-e053-d805fe0adaee 1
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: failure mechanisms induced by hot carrier testing, file e177fbc5-b0d2-50b0-e053-d805fe0adaee 1
Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors, file e177fbc5-b0da-50b0-e053-d805fe0adaee 1
Characterization of GaN-based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy, file e177fbc5-b10b-50b0-e053-d805fe0adaee 1
Spontaneous hot carrier photon emission rates in silicon: improved modeling and applications to metal oxide semiconductor devices, file e177fbc5-b10d-50b0-e053-d805fe0adaee 1
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT’s by means of electroluminescence, file e177fbc5-b10f-50b0-e053-d805fe0adaee 1
On the role of Boron in CdTe and CdZnTe crystals, file e177fbc5-b2de-50b0-e053-d805fe0adaee 1
Charge collection in semi-insulator radiation detectors in the presence of a linear decreasing electric field, file e177fbc5-b313-50b0-e053-d805fe0adaee 1
Growth and Characterization of CZT Crystals by the Vertical Bridgman Method for X-ray Detector Applications, file e177fbc5-b5db-50b0-e053-d805fe0adaee 1
Electron and hole-related luminescence processes in Gate Injection Transistors, file e177fbc5-b5de-50b0-e053-d805fe0adaee 1
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs, file e177fbc5-b5df-50b0-e053-d805fe0adaee 1
Study of Surface Treatment Effects on the Metal-CdZnTe Interface, file e177fbc5-b609-50b0-e053-d805fe0adaee 1
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman Technique, file e177fbc5-b616-50b0-e053-d805fe0adaee 1
Influence of long-term dc-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs, file e177fbc5-b61d-50b0-e053-d805fe0adaee 1
Analysis of the hot carrier luminescence in AlGaAs/GaAs power HFET's, file e177fbc5-b621-50b0-e053-d805fe0adaee 1
Light emission measurements: a promising tool to identify hot carrier phenomena, file e177fbc5-b694-50b0-e053-d805fe0adaee 1
Advanced physically based device modeling for gate current and hot carrier phenomena in scaled MOSFETs, file e177fbc5-b6c0-50b0-e053-d805fe0adaee 1
A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors, file e177fbc5-b6cd-50b0-e053-d805fe0adaee 1
Interactions between DX centers and hot electrons and holes in AlGaAs/GaAs heterostructure field-effect transistors, file e177fbc5-b6d9-50b0-e053-d805fe0adaee 1
Color matching for color constancy and inconstancy in the transition between foveal vision and extra-macular vision, file e177fbc5-b876-50b0-e053-d805fe0adaee 1
Characterization of bulk and surface transport mechanisms by means of photocurrent techniques, file e177fbc5-b905-50b0-e053-d805fe0adaee 1
Enhanced luminescence of CuCl microcrystals in an organic-inorganic hybrid matrix, file e177fbc5-b90b-50b0-e053-d805fe0adaee 1
Colour constancy and inconstancy related to foveal and extramacular vision., file e177fbc5-b96f-50b0-e053-d805fe0adaee 1
Oriented orthorhombic Lead Oxide film grown by vapour phase for X-ray detector applications, file e177fbc5-bbb7-50b0-e053-d805fe0adaee 1
Studies on charge collection and transport properties on semi-insulating materials in the presence of a non-uniform electric field, file e177fbc5-bc26-50b0-e053-d805fe0adaee 1
Thermal Processesing and Characterizations of Dye Sensitized Solar Cells Based on Nanostructured TiO2, file e177fbc5-bc6c-50b0-e053-d805fe0adaee 1
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events, file e177fbc5-be09-50b0-e053-d805fe0adaee 1
Study of Surface Treatment Effects on the Metal-CdZnTe Interface, file e177fbc5-c001-50b0-e053-d805fe0adaee 1
Coupled Monte Carlo simulation of Si and SiO2 transport in MOS capacitors, file e177fbc5-c137-50b0-e053-d805fe0adaee 1
Impact ionization and photon emission in MOS capacitors and FETs, file e177fbc5-c139-50b0-e053-d805fe0adaee 1
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material, file e177fbc5-c13e-50b0-e053-d805fe0adaee 1
Anomalous impact ionization gate current in high breakdown InP-based HEMTs, file e177fbc5-c159-50b0-e053-d805fe0adaee 1
Characterization of Bulk and Surface Transport Mechanisms by means of the Photocurrent Technique, file e177fbc5-c21c-50b0-e053-d805fe0adaee 1
Funzioni colorimetriche in visione fotopica periferica e foveale, file e177fbc5-c2e1-50b0-e053-d805fe0adaee 1
Characterization of GaN-based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy, file e177fbc5-c30d-50b0-e053-d805fe0adaee 1
New measures of the color-matching function in foveal vision, file e177fbc5-c704-50b0-e053-d805fe0adaee 1
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs, file e177fbc5-c75a-50b0-e053-d805fe0adaee 1
Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime, file e177fbc5-c75c-50b0-e053-d805fe0adaee 1
Cathode hot electrons and anode hot holes in tunneling MOS capacitors, file e177fbc5-c75d-50b0-e053-d805fe0adaee 1
A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs, file e177fbc5-c824-50b0-e053-d805fe0adaee 1
CZT X-rays detectors obtained by the boron encapsulated vertical Bridgman method, file e177fbc5-c942-50b0-e053-d805fe0adaee 1
Diagnosis of trapping phenomena in GaN MESFETs, file e177fbc5-ca03-50b0-e053-d805fe0adaee 1
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT's, file e177fbc5-ca7d-50b0-e053-d805fe0adaee 1
Experimental analysis of polarization in the hot-carrier luminescence of Silicon devices, file e177fbc5-caa3-50b0-e053-d805fe0adaee 1
Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs, file e177fbc5-cabd-50b0-e053-d805fe0adaee 1
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism, file e177fbc6-cfd7-50b0-e053-d805fe0adaee 1
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics, file e177fbc7-b1b6-50b0-e053-d805fe0adaee 1
A study of hot-electron degradation effects in pseudomorphic HEMTs, file fdd1e6f8-ac38-42f6-bd85-1ebc77e76ef1 1
Totale 197
Categoria #
all - tutte 298
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 298


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211 0 0 0 0 0 0 1 0 0 0 0 0
2021/202230 0 0 1 8 0 0 10 0 3 0 7 1
2022/202371 2 0 1 8 15 2 5 5 13 18 2 0
2023/20242 0 0 0 0 0 0 1 1 0 0 0 0
Totale 197