The laser-induced current technique has been successful used to reconstruct the spatial profile of the electric field along the thickness of a set of CdZnTe spectroscopic X-ray detectors. Current transient profiles for electrons at different applied voltages have been analyzed by means of a minimization procedure demonstrating its applicability to samples with thickness ranging from 250 μm to 4 mm. Mobility and lifetime of electrons have been also deduced and compared with the mobility-lifetime product, as evaluated by fitting the charge collection efficiency curves under a suitable electric field profile model. Comparison between results from both techniques gives a good agreement and confirms the validity of the procedure. This method results applicable each time that carrier transit times can be evaluated from the laser-induced current transients. It could be suitable for many other devices provided that they are made of materials with sufficiently high resistivity, i.e. with a sufficiently low density of free carriers in dark conditions.
Electric field reconstruction and transport parameter evaluation in CZT X-ray detectors / Pavesi, Maura; Santi, Andrea; Bettelli, M.; Zappettini, A.; Zanichelli, M.. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 64:10(2017), pp. 2706-2712. [10.1109/TNS.2017.2744327]
Electric field reconstruction and transport parameter evaluation in CZT X-ray detectors
PAVESI, Maura;SANTI, ANDREA;
2017-01-01
Abstract
The laser-induced current technique has been successful used to reconstruct the spatial profile of the electric field along the thickness of a set of CdZnTe spectroscopic X-ray detectors. Current transient profiles for electrons at different applied voltages have been analyzed by means of a minimization procedure demonstrating its applicability to samples with thickness ranging from 250 μm to 4 mm. Mobility and lifetime of electrons have been also deduced and compared with the mobility-lifetime product, as evaluated by fitting the charge collection efficiency curves under a suitable electric field profile model. Comparison between results from both techniques gives a good agreement and confirms the validity of the procedure. This method results applicable each time that carrier transit times can be evaluated from the laser-induced current transients. It could be suitable for many other devices provided that they are made of materials with sufficiently high resistivity, i.e. with a sufficiently low density of free carriers in dark conditions.File | Dimensione | Formato | |
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