The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.
Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals / A., Zappettini; Zambelli, Nicola; Benassi, Giacomo; Calestani, Davide; Pavesi, Maura. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 104:25(2014), p. 252105. [10.1063/1.4885116]
Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals
ZAMBELLI, Nicola;BENASSI, Giacomo;CALESTANI, Davide;PAVESI, Maura
2014-01-01
Abstract
The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
