This paper presents simulations of electron and hole gate currents in thin oxide tunneling MOS capacitors, based on a newly developed Monte Carlo code for Si-SiO2-Si stacks. Fully bipolar simulations with state of the art Si and SiO. transport models predict a previously neglected population of cathode hot electrons proportional to that of the anode hot holes, often regarded as responsible of oxide degradation. The bias dependence of this population is discussed in view of recently reported results on the role of hole injection and transport in device degradation.
Cathode hot electrons and anode hot holes in tunneling MOS capacitors / P., Palestri; L., Selmi; E., Sangiorgi; Pavesi, Maura; F., Widdershoven. - ELETTRONICO. - (2000), pp. 296-299. (Intervento presentato al convegno 30th European Solid-State Device Research Conference - ESSDERC ’00 tenutosi a Cork, Ireland nel 11–13 September 2000) [10.1109/ESSDERC.2000.194773].
Cathode hot electrons and anode hot holes in tunneling MOS capacitors
PAVESI, Maura;
2000-01-01
Abstract
This paper presents simulations of electron and hole gate currents in thin oxide tunneling MOS capacitors, based on a newly developed Monte Carlo code for Si-SiO2-Si stacks. Fully bipolar simulations with state of the art Si and SiO. transport models predict a previously neglected population of cathode hot electrons proportional to that of the anode hot holes, often regarded as responsible of oxide degradation. The bias dependence of this population is discussed in view of recently reported results on the role of hole injection and transport in device degradation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
