The presence of traps is sometimes favorable, and sometimes detrimental to the electrical transport and optical efficiency in III-nitride quantum heterostructures. This work presents the results of a joint analysis of electrical features and electroluminescence in InGaN∕GaNInGaN∕GaN-based blue light emitting diodes; a detailed and exhaustive reading of the carrier injection mechanisms highlights the central role of trap centers near the active region. Some suggestions will be eventually advanced as to the design of devices with better emission performances.
|Tipologia ministeriale:||Articolo su rivista|
|Appare nelle tipologie:||1.1 Articolo su rivista|