IRIS
FORNARI, Roberto
 Distribuzione geografica
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Continente #
AS - Asia 10.692
NA - Nord America 9.131
EU - Europa 5.035
SA - Sud America 1.570
AF - Africa 529
Continente sconosciuto - Info sul continente non disponibili 22
OC - Oceania 8
Totale 26.987
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Nazione #
US - Stati Uniti d'America 8.877
SG - Singapore 4.042
CN - Cina 2.923
VN - Vietnam 1.503
BR - Brasile 1.230
IE - Irlanda 925
IT - Italia 906
HK - Hong Kong 866
SE - Svezia 589
FI - Finlandia 587
FR - Francia 497
TR - Turchia 444
NL - Olanda 394
ZA - Sudafrica 366
DE - Germania 332
GB - Regno Unito 212
RU - Federazione Russa 196
IN - India 177
AR - Argentina 127
CA - Canada 107
BD - Bangladesh 101
MX - Messico 98
JP - Giappone 87
IQ - Iraq 72
UA - Ucraina 67
EC - Ecuador 56
ID - Indonesia 53
KR - Corea 53
AT - Austria 51
PL - Polonia 51
PH - Filippine 48
RO - Romania 45
VE - Venezuela 44
ES - Italia 43
PK - Pakistan 35
BE - Belgio 32
MA - Marocco 31
CO - Colombia 30
UZ - Uzbekistan 30
CZ - Repubblica Ceca 28
SA - Arabia Saudita 28
TN - Tunisia 25
IR - Iran 24
PY - Paraguay 23
TH - Thailandia 23
TW - Taiwan 22
CL - Cile 20
DZ - Algeria 19
CI - Costa d'Avorio 18
EU - Europa 18
PE - Perù 18
KE - Kenya 17
MY - Malesia 16
EG - Egitto 15
JO - Giordania 15
AE - Emirati Arabi Uniti 14
CH - Svizzera 14
NP - Nepal 14
UY - Uruguay 14
KG - Kirghizistan 11
LT - Lituania 11
AZ - Azerbaigian 10
LB - Libano 10
AL - Albania 9
ET - Etiopia 9
OM - Oman 9
BO - Bolivia 8
KZ - Kazakistan 8
AU - Australia 7
DO - Repubblica Dominicana 7
PA - Panama 7
PS - Palestinian Territory 7
AM - Armenia 6
BG - Bulgaria 6
CM - Camerun 6
NG - Nigeria 6
SN - Senegal 6
SY - Repubblica araba siriana 6
CR - Costa Rica 5
IL - Israele 5
JM - Giamaica 5
TT - Trinidad e Tobago 5
BH - Bahrain 4
BN - Brunei Darussalam 4
BY - Bielorussia 4
HN - Honduras 4
HU - Ungheria 4
KW - Kuwait 4
LV - Lettonia 4
NI - Nicaragua 4
PT - Portogallo 4
RS - Serbia 4
XK - ???statistics.table.value.countryCode.XK??? 4
BB - Barbados 3
GE - Georgia 3
GT - Guatemala 3
LK - Sri Lanka 3
LU - Lussemburgo 3
NO - Norvegia 3
SK - Slovacchia (Repubblica Slovacca) 3
Totale 26.946
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Città #
Singapore 1.842
Ashburn 1.241
San Jose 1.150
Dublin 916
Hong Kong 822
Beijing 787
Chandler 738
Santa Clara 625
Ho Chi Minh City 474
Dallas 460
Boardman 369
Nanjing 355
Izmir 353
Johannesburg 340
Hanoi 327
Parma 308
Ann Arbor 297
Dearborn 287
Lauterbourg 266
Princeton 240
Los Angeles 202
Hefei 175
Wilmington 171
Helsinki 123
Kunming 118
Shanghai 118
New York 115
São Paulo 109
Shenyang 102
Columbus 100
Jacksonville 100
Nanchang 97
Seattle 96
San Mateo 89
Strasbourg 88
Hebei 77
Moscow 75
Munich 74
Grafing 72
Guangzhou 66
Jinan 66
Tokyo 64
Da Nang 55
Tianjin 55
Council Bluffs 54
Haiphong 54
Milan 53
Buffalo 50
The Dalles 49
Changsha 47
Jiaxing 45
Woodbridge 45
Rio de Janeiro 44
Brooklyn 42
Houston 41
Kensington 41
Warsaw 41
Kocaeli 39
Norwalk 35
Seoul 35
Amsterdam 33
Chicago 32
Jakarta 32
Toronto 32
Vienna 31
Rome 30
Brussels 29
Mexico City 29
Baghdad 28
Bremen 27
Atlanta 26
Can Tho 26
Des Moines 26
London 25
Montreal 25
Phoenix 25
Tashkent 25
Berlin 24
Frankfurt am Main 24
Nuremberg 24
Stockholm 24
Biên Hòa 23
Bologna 23
Brasília 23
Curitiba 23
Hải Dương 23
Istanbul 23
Turku 23
Chennai 22
Mumbai 22
Hangzhou 21
Marseille 21
Belo Horizonte 20
Orem 20
San Francisco 20
Boston 19
Modena 19
Pittsburgh 19
Quito 19
Abidjan 18
Totale 16.297
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 259
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 231
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 220
Thermal stability of ε-Ga2O3 polymorph 220
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 218
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 179
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 179
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 179
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD 175
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 169
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 169
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 168
Crystal structure and ferroelectric properties of ϵ-Ga2O3 films grown on (0001)-sapphire 167
Sol-gel growth and characterization of In2O3 thin films 165
Influence of growth parameters on the residual strain in 3C-SiC epitaxial layers on (001) silicon 164
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 162
Si and Sn doping of ε-Ga2O3 layers 160
The real structure of ε-Ga2O3 and its relation to κ-phase 159
Thermal expansion coefficients of beta-Ga2O3 single crystals 158
Proc. 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies 157
Bulk Crystal Growth of Semiconductors: An Overview 157
Innovative back-contact for Sb2Se3-based thin film solar cells 155
A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method 154
Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3 150
A new approach to free-standing GaN using beta-Ga2O3 as a substrate 149
Progress in MOVPE growth of Ga2O3 149
Substrates of wide bandgap materials 149
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 145
Comprehensive Semiconductors Science and Technology Second Edition 145
The electronic structure of ε-Ga2O3 145
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains 145
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 144
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 144
Epitaxial growth of gallium oxide and related materials by CVD methods 143
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 143
Proceedings of Symposium Italian Crystal Growth 99 142
Ga2O3 polymorphs: Tailoring the epitaxial growth conditions 141
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 140
Aligned AlN nanowires by self-organized vapor-solid growth 139
Effect of lithium diffusion into Ga2O3 thin films 138
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 138
Effect of Heterojunction Characteristics and Deep Electronic Levels on the Performance of (Cd,Zn)S/Sb2Se3 Solar Cells 138
Annealing-related phenomena in bulk semi-insulating indium phosphide 137
Homogeneity of Fe-doped InP wafers using optical microprobes 136
Characterization of HVPE GaN layers by Atomic Force Microscopy and Raman spectroscopy 134
A study of Indium incorporation efficiency in InGaN grown by MOVPE 134
A Study of Structural-properties of Bulk Double-doped Inp By Laser Scattering Tomography and Photoetching 134
Effect of growth parameters on iron incorporation in semi-insulating LEC indium phosphide 131
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors 130
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 129
AFM observation of GaN grown on different substrates at low temperatures 129
Gallium Oxide: A Rising Star in The Semiconductor Realm 129
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 129
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts 127
P-type Doping of Epitaxial 3C-SiC Layers on Silicon (001) 125
Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal 124
A vertical reactor for deposition of gallium nitride 123
Tetravalent element doping of β-Ga₂O₃ films grown by pulsed electron deposition technique 122
Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy 122
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 119
A new approach to grow C-doped GaN thick epitaxial layers 118
Coloration of Wide-Bandgap Semiconductors Originating from Particle Plasmons 118
Czochralski growth of Ti:Sapphire laser crystals 117
Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods 116
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 115
A study of iron incorporation in LEG-grown indium phosphide 115
Dislocation-induced by thermal stress in GaAs crystals grown from the melt 115
Effect of Crystal Orientation On Dislocation Formation In Lec Gaas 114
Assessment of phonon scattering-related mobility in β-Ga2O3 113
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique 112
Dislocation Reduction In Heavily Doped Gallium-arsenide Single-crystals 111
Dislocation-free Silicon-doped Gallium-arsenide Grown By Lec Procedure 110
Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy 108
null 107
Photocurrent mapping of Fe-doped semi-insulating InP 107
Improved Crystal-growth Processes For High-quality Iii-v Substrates 106
Effects of Melt Composition On Deep Electronic States and Compensation Ratios In N-type Lec Gallium-arsenide 106
Defects and inhomogeneities in GaAs substrates as revealed by DSL photo-etcvhing techniques 106
Growth and characterization of bismuth thiourea chloride (BTC) 106
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 106
Design of CsSnBr3/Ga2O3 Hybrid Photodetectors for High UV Selectivity and Bifacial Usage 105
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 105
A new method for calculation of island-size distribution in submonolayer epitaxial growth 104
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects 104
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3 101
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 100
METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL 100
Special issue - Proceedings of the Italian Crystal Growth Symposium, Naples, Italy, 7-9 September 1999 99
Properties of GaAs bulk crystals in high doping regime 98
Kristallizationsverfahren zur Erzeugung kristalliner Halbleiterschichten 98
Bulk Crystal Growth 98
Boron as an anti-surfactant in sublimation growth of AlN single crystals 98
Gallium arsenide single crystals with low dislocation density and high purity 97
Cathodoluminescence and X-ray Topography Study of Cr Segregation In Lec Grown InP - Cr 96
Boron- and stoichiometry-related defect engineering during B(2)O(3)-free GaAs crystal growth 96
Preparation of low dislocation density and semi-insulating Indium Phosphide using LEC technique 96
Structural Characterization of Heavily Zn-doped Liquid Encapsulated Czochralski Inp 96
Bridgman-grown zinc oxide single crystals 95
Growth of Bulk Semiconductors: a Review 95
Innovative and sustainable solar cells based on abundant elements on the Earth crust 93
Totale 13.365
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Categoria #
all - tutte 100.794
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 100.794
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021194 0 0 0 0 0 0 0 0 0 81 66 47
2021/20221.034 28 29 10 69 52 81 63 114 48 66 25 449
2022/20233.191 502 234 161 227 209 389 43 167 1.120 21 86 32
2023/20241.484 85 119 45 61 128 340 90 99 55 101 81 280
2024/20255.841 91 319 337 243 697 629 405 293 741 582 429 1.075
2025/202611.356 1.122 1.180 1.478 1.012 1.579 655 1.581 461 1.572 716 0 0
Totale 27.326