IRIS
FORNARI, Roberto
 Distribuzione geografica
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Continente #
NA - Nord America 4.511
EU - Europa 3.225
AS - Asia 2.890
AF - Africa 31
Continente sconosciuto - Info sul continente non disponibili 18
OC - Oceania 3
SA - Sud America 2
Totale 10.680
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Nazione #
US - Stati Uniti d'America 4.473
CN - Cina 1.937
IE - Irlanda 901
SE - Svezia 561
IT - Italia 552
FI - Finlandia 550
SG - Singapore 447
TR - Turchia 392
DE - Germania 187
FR - Francia 177
GB - Regno Unito 46
NL - Olanda 44
RO - Romania 42
UA - Ucraina 42
IN - India 40
CA - Canada 37
JP - Giappone 33
BE - Belgio 31
CZ - Repubblica Ceca 25
EU - Europa 18
CI - Costa d'Avorio 15
IR - Iran 13
RU - Federazione Russa 13
CH - Svizzera 11
ES - Italia 11
AT - Austria 7
HK - Hong Kong 6
LB - Libano 6
PL - Polonia 6
KR - Corea 5
TN - Tunisia 5
NG - Nigeria 4
PT - Portogallo 4
AU - Australia 3
BG - Bulgaria 3
CM - Camerun 3
IQ - Iraq 3
LV - Lettonia 3
MA - Marocco 3
TW - Taiwan 3
NO - Norvegia 2
SK - Slovacchia (Repubblica Slovacca) 2
AM - Armenia 1
BR - Brasile 1
DZ - Algeria 1
HR - Croazia 1
LT - Lituania 1
LU - Lussemburgo 1
MC - Monaco 1
MD - Moldavia 1
MX - Messico 1
OM - Oman 1
PE - Perù 1
PK - Pakistan 1
TM - Turkmenistan 1
VN - Vietnam 1
Totale 10.680
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Città #
Dublin 893
Chandler 738
Beijing 553
Ashburn 389
Nanjing 353
Izmir 352
Boardman 327
Ann Arbor 297
Singapore 291
Dearborn 287
Princeton 240
Parma 192
Wilmington 171
Kunming 117
Helsinki 111
Shenyang 100
Jacksonville 98
Shanghai 98
Nanchang 97
Seattle 90
San Mateo 89
Strasbourg 88
Hefei 85
Hebei 77
Grafing 72
Jinan 61
New York 58
Guangzhou 50
Santa Clara 47
Los Angeles 46
Jiaxing 45
Woodbridge 45
Changsha 39
Kocaeli 39
Milan 36
Tianjin 36
Norwalk 35
Houston 30
Brussels 28
Bremen 26
Marseille 21
Tokyo 20
Des Moines 19
Brno 18
Hangzhou 18
Abidjan 15
Fremont 15
Mestre 14
Toronto 14
Berlin 13
Bologna 13
Chengdu 13
Zhengzhou 13
Dallas 12
Shaoxing 12
Chicago 11
Cambridge 10
Chongqing 10
Ningbo 10
Taiyuan 10
Timisoara 10
Borås 9
Domnești 9
Haikou 9
Pune 9
Rome 9
Wuhan 9
Cremona 8
Aubagne 7
Falls Church 7
Heidelberg 7
Leawood 7
Madrid 7
Ottawa 7
Redwood City 7
Reggio Nell'emilia 7
Rockville 7
Trento 7
Vienna 7
Washington 7
Ardabil 6
Focsani 6
Fuzhou 6
West Jordan 6
Xian 6
Andover 5
Augusta 5
Clifton 5
Horia 5
Munich 5
Paris 5
Phoenix 5
Segrate 5
Vanzago 5
Wenzhou 5
Amsterdam 4
Baotou 4
Brantford 4
Corroios 4
Dronten 4
Totale 7.363
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 133
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 126
Thermal stability of ε-Ga2O3 polymorph 122
Influence of growth parameters on the residual strain in 3C-SiC epitaxial layers on (001) silicon 115
Si and Sn doping of ε-Ga2O3 layers 97
Sol-gel growth and characterization of In2O3 thin films 97
Homogeneity of Fe-doped InP wafers using optical microprobes 94
Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3 94
Thermal expansion coefficients of beta-Ga2O3 single crystals 94
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 92
Characterization of HVPE GaN layers by Atomic Force Microscopy and Raman spectroscopy 85
Progress in MOVPE growth of Ga2O3 84
Substrates of wide bandgap materials 84
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 82
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 81
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 80
Proc. 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies 79
Effect of growth parameters on iron incorporation in semi-insulating LEC indium phosphide 78
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 78
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD 77
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 77
Coloration of Wide-Bandgap Semiconductors Originating from Particle Plasmons 76
Crystal structure and ferroelectric properties of ϵ-Ga2O3 films grown on (0001)-sapphire 74
Aligned AlN nanowires by self-organized vapor-solid growth 72
A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method 71
Proceedings of Symposium Italian Crystal Growth 99 70
Innovative back-contact for Sb2Se3-based thin film solar cells 69
Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal 69
The electronic structure of ε-Ga2O3 67
AFM observation of GaN grown on different substrates at low temperatures 67
P-type Doping of Epitaxial 3C-SiC Layers on Silicon (001) 66
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains 65
Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy 64
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors 64
The real structure of ε-Ga2O3 and its relation to κ-phase 64
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 63
Dislocation Reduction In Heavily Doped Gallium-arsenide Single-crystals 63
Dislocation-induced by thermal stress in GaAs crystals grown from the melt 62
A new approach to free-standing GaN using beta-Ga2O3 as a substrate 61
Ga2O3 polymorphs: Tailoring the epitaxial growth conditions 61
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 61
Indium phosphide 60
Effects of Melt Composition On Deep Electronic States and Compensation Ratios In N-type Lec Gallium-arsenide 59
Gallium Oxide: A Rising Star in The Semiconductor Realm 59
Growth and characterization of bismuth thiourea chloride (BTC) 59
Defects and inhomogeneities in GaAs substrates as revealed by DSL photo-etcvhing techniques 58
Kristallizationsverfahren zur Erzeugung kristalliner Halbleiterschichten 58
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts 58
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 58
Photocurrent mapping of Fe-doped semi-insulating InP 57
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 57
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 56
Effect of Crystal Orientation On Dislocation Formation In Lec Gaas 56
Annealing-related phenomena in bulk semi-insulating indium phosphide 56
Boron- and stoichiometry-related defect engineering during B(2)O(3)-free GaAs crystal growth 55
Boron as an anti-surfactant in sublimation growth of AlN single crystals 55
Improved Crystal-growth Processes For High-quality Iii-v Substrates 54
Structural Characterization of Heavily Zn-doped Liquid Encapsulated Czochralski Inp 54
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 54
Properties of GaAs bulk crystals in high doping regime 53
A study of iron incorporation in LEG-grown indium phosphide 53
A new method for calculation of island-size distribution in submonolayer epitaxial growth 53
Assessment of phonon scattering-related mobility in β-Ga2O3 53
Growth of Bulk Semiconductors: a Review 52
A study of Indium incorporation efficiency in InGaN grown by MOVPE 52
Bulk Crystal Growth 51
A Study of Structural-properties of Bulk Double-doped Inp By Laser Scattering Tomography and Photoetching 51
Dislocation-free Silicon-doped Gallium-arsenide Grown By Lec Procedure 50
Crystal Growth of Materials for Energy Production and Energy-saving Applications 50
Bridgman-grown zinc oxide single crystals 49
A vertical reactor for deposition of gallium nitride 49
Kristallisationsanlage und Kristallisationsverfahren 48
Gallium arsenide single crystals with low dislocation density and high purity 48
Vorrichtung und Verfahren zur Züchtung von III-Nitrid Volumenkristallen 47
La ricerca universitaria a Parma 47
Zn3P2 precipitates in dislocation-free LEC InP heavily doped with Zn 46
Si-doping Effect On Electrical-properties of Lec-gaas Crystals 46
METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL 46
Silicon doped Gallium Arsenide substrates for Photovoltaic applications 45
A new approach to grow C-doped GaN thick epitaxial layers 45
Effects of Melt Composition On Structural and Electrical Characteristics of Lec Si-doped Gallium-arsenide 45
Crystal Growth of Technologically Important Electronic Materials 45
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 44
Complementary Study of Indentation-induced Dislocations In GaAs and InP By Photoetching, Sem, Spl and Ebic 44
Recent Advances in Bulk Crystal Growth 44
Single Crystals of Electronic Materials: Growth and Properties 44
Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods 44
Influence of ingot and wafer annealing on the homogeneity of Fe-doped semiinsulating InP wafers 43
Procedimento per la produzione di fette di InP drogato Ferro con caratteristiche semi-isolanti 43
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 43
Verfahren und Vorrichtung zur Herstellung von Zinkoxid-Einkristallen aus einer Schmelze 42
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique 42
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects 42
Dopant segregations in oxide single-crystal fibers grown by the micro-pulling-down method 41
Growth of wurtzite InN on bulk In2O3(111) wafers 41
Microprocessor for voltage ramp programmers 41
Indium Phosphide 41
Electronic materials and crystal growth 41
Melt growth, characterization and properties of bulk In2O3 single crystals 40
Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering - A case study on indium oxide 40
Totale 6.185
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Categoria #
all - tutte 48.908
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 48.908
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020994 0 0 0 14 60 260 175 79 73 177 74 82
2020/2021650 7 22 15 23 67 38 40 49 195 81 66 47
2021/20221.034 28 29 10 69 52 81 63 114 48 66 25 449
2022/20233.191 502 234 161 227 209 389 43 167 1.120 21 86 32
2023/20241.484 85 119 45 61 128 340 90 99 55 101 81 280
2024/2025781 91 319 337 34 0 0 0 0 0 0 0 0
Totale 10.910