IRIS
FORNARI, Roberto
 Distribuzione geografica
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Continente #
NA - Nord America 5.652
AS - Asia 4.622
EU - Europa 4.133
SA - Sud America 673
AF - Africa 65
Continente sconosciuto - Info sul continente non disponibili 18
OC - Oceania 6
Totale 15.169
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Nazione #
US - Stati Uniti d'America 5.566
CN - Cina 2.078
SG - Singapore 1.671
IE - Irlanda 913
IT - Italia 762
BR - Brasile 614
FI - Finlandia 575
SE - Svezia 567
TR - Turchia 416
NL - Olanda 380
DE - Germania 254
FR - Francia 201
HK - Hong Kong 192
RU - Federazione Russa 125
IN - India 78
GB - Regno Unito 76
CA - Canada 57
UA - Ucraina 49
RO - Romania 43
JP - Giappone 38
AT - Austria 34
BE - Belgio 32
CZ - Repubblica Ceca 26
PL - Polonia 23
ID - Indonesia 22
BD - Bangladesh 21
ES - Italia 19
MX - Messico 19
EU - Europa 18
IR - Iran 16
CI - Costa d'Avorio 15
VE - Venezuela 14
CH - Svizzera 13
AR - Argentina 12
EC - Ecuador 12
IQ - Iraq 12
TN - Tunisia 12
MA - Marocco 10
LT - Lituania 9
LB - Libano 8
UZ - Uzbekistan 8
CM - Camerun 6
CO - Colombia 6
DZ - Algeria 6
KR - Corea 6
NP - Nepal 6
AU - Australia 5
PK - Pakistan 5
ZA - Sudafrica 5
AL - Albania 4
AZ - Azerbaigian 4
BO - Bolivia 4
KE - Kenya 4
KG - Kirghizistan 4
LV - Lettonia 4
NG - Nigeria 4
PE - Perù 4
PT - Portogallo 4
SA - Arabia Saudita 4
AM - Armenia 3
BG - Bulgaria 3
CL - Cile 3
JO - Giordania 3
OM - Oman 3
PA - Panama 3
SK - Slovacchia (Repubblica Slovacca) 3
TW - Taiwan 3
AE - Emirati Arabi Uniti 2
BY - Bielorussia 2
DO - Repubblica Dominicana 2
HN - Honduras 2
HU - Ungheria 2
IL - Israele 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LK - Sri Lanka 2
LU - Lussemburgo 2
MY - Malesia 2
NO - Norvegia 2
PY - Paraguay 2
SN - Senegal 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
BH - Bahrain 1
BN - Brunei Darussalam 1
CY - Cipro 1
DK - Danimarca 1
EG - Egitto 1
GT - Guatemala 1
HR - Croazia 1
IS - Islanda 1
MC - Monaco 1
MD - Moldavia 1
MM - Myanmar 1
MN - Mongolia 1
NZ - Nuova Zelanda 1
PH - Filippine 1
RS - Serbia 1
TH - Thailandia 1
TM - Turkmenistan 1
Totale 15.168
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Città #
Singapore 1.017
Dublin 905
Chandler 738
Beijing 612
Santa Clara 598
Ashburn 470
Nanjing 353
Izmir 352
Boardman 328
Ann Arbor 297
Dearborn 287
Parma 278
Princeton 240
Hong Kong 184
Wilmington 171
Helsinki 121
Kunming 117
Shanghai 104
Shenyang 100
Hefei 98
Jacksonville 98
Nanchang 97
Seattle 92
San Mateo 89
Strasbourg 88
Hebei 77
Grafing 72
Moscow 72
Los Angeles 70
New York 67
Columbus 66
Jinan 62
Guangzhou 51
São Paulo 46
Jiaxing 45
Woodbridge 45
Milan 42
Changsha 40
Kocaeli 39
Tianjin 36
Norwalk 35
The Dalles 34
Munich 32
Houston 30
Brussels 29
Bremen 26
Des Moines 26
Amsterdam 24
Rome 24
Tokyo 23
Vienna 23
Council Bluffs 22
Jakarta 22
Marseille 21
Toronto 21
Berlin 19
Bologna 18
Brno 18
Hangzhou 18
Modena 18
Nuremberg 18
Rio de Janeiro 18
Dallas 17
Chicago 16
Abidjan 15
Fremont 15
Mumbai 15
Turku 15
Warsaw 15
Mestre 14
Phoenix 14
Zhengzhou 14
Bengaluru 13
Brasília 13
Brooklyn 13
Chengdu 13
San Francisco 13
Belo Horizonte 12
Istanbul 12
London 12
Shaoxing 12
Cambridge 10
Chongqing 10
Curitiba 10
Ningbo 10
Ottawa 10
Taiyuan 10
Timisoara 10
Borås 9
Domnești 9
Frankfurt am Main 9
Haikou 9
Pittsburgh 9
Pune 9
Wuhan 9
Charlotte 8
Cremona 8
Praia Grande 8
Aubagne 7
Campinas 7
Totale 9.617
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 171
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 158
Thermal stability of ε-Ga2O3 polymorph 156
Influence of growth parameters on the residual strain in 3C-SiC epitaxial layers on (001) silicon 127
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 123
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD 123
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 122
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 122
Si and Sn doping of ε-Ga2O3 layers 121
Sol-gel growth and characterization of In2O3 thin films 119
Thermal expansion coefficients of beta-Ga2O3 single crystals 115
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 114
Substrates of wide bandgap materials 112
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 110
Proc. 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies 109
Characterization of HVPE GaN layers by Atomic Force Microscopy and Raman spectroscopy 107
Homogeneity of Fe-doped InP wafers using optical microprobes 107
Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3 107
Bulk Crystal Growth of Semiconductors: An Overview 106
Progress in MOVPE growth of Ga2O3 103
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 102
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 101
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 100
Crystal structure and ferroelectric properties of ϵ-Ga2O3 films grown on (0001)-sapphire 98
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 97
Proceedings of Symposium Italian Crystal Growth 99 97
Innovative back-contact for Sb2Se3-based thin film solar cells 94
Effect of growth parameters on iron incorporation in semi-insulating LEC indium phosphide 90
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains 90
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 88
Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal 88
A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method 88
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 88
Ga2O3 polymorphs: Tailoring the epitaxial growth conditions 87
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 86
Aligned AlN nanowires by self-organized vapor-solid growth 86
The electronic structure of ε-Ga2O3 86
Coloration of Wide-Bandgap Semiconductors Originating from Particle Plasmons 86
The real structure of ε-Ga2O3 and its relation to κ-phase 85
Gallium Oxide: A Rising Star in The Semiconductor Realm 84
Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy 82
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors 82
AFM observation of GaN grown on different substrates at low temperatures 81
P-type Doping of Epitaxial 3C-SiC Layers on Silicon (001) 81
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts 80
Dislocation Reduction In Heavily Doped Gallium-arsenide Single-crystals 77
Dislocation-induced by thermal stress in GaAs crystals grown from the melt 77
A new approach to free-standing GaN using beta-Ga2O3 as a substrate 76
Annealing-related phenomena in bulk semi-insulating indium phosphide 75
Effect of Crystal Orientation On Dislocation Formation In Lec Gaas 74
A Study of Structural-properties of Bulk Double-doped Inp By Laser Scattering Tomography and Photoetching 74
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 74
Growth and characterization of bismuth thiourea chloride (BTC) 74
Effects of Melt Composition On Deep Electronic States and Compensation Ratios In N-type Lec Gallium-arsenide 73
Photocurrent mapping of Fe-doped semi-insulating InP 73
Kristallizationsverfahren zur Erzeugung kristalliner Halbleiterschichten 73
Defects and inhomogeneities in GaAs substrates as revealed by DSL photo-etcvhing techniques 72
Dislocation-free Silicon-doped Gallium-arsenide Grown By Lec Procedure 72
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 72
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 71
A study of iron incorporation in LEG-grown indium phosphide 71
Improved Crystal-growth Processes For High-quality Iii-v Substrates 70
A study of Indium incorporation efficiency in InGaN grown by MOVPE 69
Indium phosphide 69
Assessment of phonon scattering-related mobility in β-Ga2O3 68
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 68
Properties of GaAs bulk crystals in high doping regime 67
A vertical reactor for deposition of gallium nitride 67
A new method for calculation of island-size distribution in submonolayer epitaxial growth 67
Growth of Bulk Semiconductors: a Review 66
Bulk Crystal Growth 66
Boron- and stoichiometry-related defect engineering during B(2)O(3)-free GaAs crystal growth 65
Boron as an anti-surfactant in sublimation growth of AlN single crystals 65
Structural Characterization of Heavily Zn-doped Liquid Encapsulated Czochralski Inp 65
Silicon doped Gallium Arsenide substrates for Photovoltaic applications 64
Czochralski growth of Ti:Sapphire laser crystals 64
Bridgman-grown zinc oxide single crystals 63
Vorrichtung und Verfahren zur Züchtung von III-Nitrid Volumenkristallen 63
Gallium arsenide single crystals with low dislocation density and high purity 63
Crystal Growth of Materials for Energy Production and Energy-saving Applications 63
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 63
Si-doping Effect On Electrical-properties of Lec-gaas Crystals 62
A new approach to grow C-doped GaN thick epitaxial layers 62
Comprehensive Semiconductors Science and Technology Second Edition 61
Kristallisationsanlage und Kristallisationsverfahren 61
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects 60
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 59
Influence of ingot and wafer annealing on the homogeneity of Fe-doped semiinsulating InP wafers 59
Electrical properties of beta-Ga2O3 single crystals grown by the Czochralski method 58
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique 58
Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods 58
Effects of Melt Composition On Structural and Electrical Characteristics of Lec Si-doped Gallium-arsenide 57
Crystal Growth of Technologically Important Electronic Materials 57
METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL 57
Epitaxial growth of gallium oxide and related materials by CVD methods 56
Recent Advances in Bulk Crystal Growth 56
Comprehensive Semiconductor Science and Technology 56
Single Crystals of Electronic Materials: Growth and Properties 55
La ricerca universitaria a Parma 55
Zn3P2 precipitates in dislocation-free LEC InP heavily doped with Zn 54
Totale 8.253
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Categoria #
all - tutte 69.090
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 69.090
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202082 0 0 0 0 0 0 0 0 0 0 0 82
2020/2021650 7 22 15 23 67 38 40 49 195 81 66 47
2021/20221.034 28 29 10 69 52 81 63 114 48 66 25 449
2022/20233.191 502 234 161 227 209 389 43 167 1.120 21 86 32
2023/20241.484 85 119 45 61 128 340 90 99 55 101 81 280
2024/20255.362 91 319 337 243 697 629 405 293 741 582 423 602
Totale 15.491