IRIS
FORNARI, Roberto
 Distribuzione geografica
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Continente #
NA - Nord America 4.001
EU - Europa 3.116
AS - Asia 2.432
Continente sconosciuto - Info sul continente non disponibili 18
AF - Africa 16
SA - Sud America 2
Totale 9.585
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Nazione #
US - Stati Uniti d'America 3.963
CN - Cina 1.880
IE - Irlanda 897
SE - Svezia 561
FI - Finlandia 549
IT - Italia 508
TR - Turchia 392
DE - Germania 175
FR - Francia 170
SG - Singapore 51
GB - Regno Unito 44
NL - Olanda 44
UA - Ucraina 42
IN - India 38
CA - Canada 37
BE - Belgio 31
JP - Giappone 30
RO - Romania 30
EU - Europa 18
IR - Iran 13
RU - Federazione Russa 10
CH - Svizzera 9
CZ - Repubblica Ceca 9
AT - Austria 6
ES - Italia 6
HK - Hong Kong 6
LB - Libano 6
PL - Polonia 6
KR - Corea 5
TN - Tunisia 5
NG - Nigeria 4
PT - Portogallo 4
BG - Bulgaria 3
CM - Camerun 3
IQ - Iraq 3
LV - Lettonia 3
MA - Marocco 3
TW - Taiwan 3
NO - Norvegia 2
SK - Slovacchia (Repubblica Slovacca) 2
AM - Armenia 1
BR - Brasile 1
DZ - Algeria 1
HR - Croazia 1
LT - Lituania 1
LU - Lussemburgo 1
MC - Monaco 1
MD - Moldavia 1
MX - Messico 1
OM - Oman 1
PE - Perù 1
PK - Pakistan 1
TM - Turkmenistan 1
VN - Vietnam 1
Totale 9.585
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Città #
Dublin 889
Chandler 738
Beijing 553
Ashburn 372
Nanjing 353
Izmir 352
Ann Arbor 297
Dearborn 287
Princeton 240
Wilmington 171
Parma 170
Kunming 117
Helsinki 110
Shenyang 100
Jacksonville 98
Nanchang 97
Seattle 90
San Mateo 89
Strasbourg 88
Hefei 84
Hebei 77
Grafing 72
Shanghai 67
Jinan 61
New York 58
Guangzhou 50
Los Angeles 46
Jiaxing 45
Woodbridge 45
Changsha 39
Kocaeli 39
Tianjin 36
Norwalk 35
Milan 32
Houston 30
Brussels 28
Bremen 26
Boardman 23
Tokyo 20
Des Moines 19
Hangzhou 18
Fremont 15
Marseille 14
Mestre 14
Toronto 14
Berlin 13
Bologna 13
Zhengzhou 13
Shaoxing 12
Chengdu 11
Chicago 11
Cambridge 10
Chongqing 10
Ningbo 10
Taiyuan 10
Timisoara 10
Borås 9
Haikou 9
Pune 9
Singapore 9
Wuhan 9
Cremona 8
Rome 8
Aubagne 7
Falls Church 7
Heidelberg 7
Leawood 7
Ottawa 7
Redwood City 7
Reggio Nell'emilia 7
Rockville 7
Trento 7
Washington 7
Ardabil 6
Focsani 6
Fuzhou 6
Vienna 6
West Jordan 6
Xian 6
Andover 5
Augusta 5
Horia 5
Paris 5
Phoenix 5
Segrate 5
Vanzago 5
Wenzhou 5
Amsterdam 4
Baotou 4
Brantford 4
Corroios 4
Dronten 4
Fairfield 4
Glasgow 4
Hartland 4
Kilchberg 4
Lagos 4
Lanzhou 4
Linköping 4
Menlo Park 4
Totale 6.600
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 127
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 119
Thermal stability of ε-Ga2O3 polymorph 117
Influence of growth parameters on the residual strain in 3C-SiC epitaxial layers on (001) silicon 113
Homogeneity of Fe-doped InP wafers using optical microprobes 92
Si and Sn doping of ε-Ga2O3 layers 92
Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3 89
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 89
Sol-gel growth and characterization of In2O3 thin films 88
Thermal expansion coefficients of beta-Ga2O3 single crystals 86
Characterization of HVPE GaN layers by Atomic Force Microscopy and Raman spectroscopy 82
Progress in MOVPE growth of Ga2O3 78
Substrates of wide bandgap materials 77
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 77
Effect of growth parameters on iron incorporation in semi-insulating LEC indium phosphide 76
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 73
Coloration of Wide-Bandgap Semiconductors Originating from Particle Plasmons 72
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 72
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 72
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 71
Proc. 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies 70
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD 70
Aligned AlN nanowires by self-organized vapor-solid growth 67
Crystal structure and ferroelectric properties of ϵ-Ga2O3 films grown on (0001)-sapphire 66
Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal 65
A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method 65
P-type Doping of Epitaxial 3C-SiC Layers on Silicon (001) 64
AFM observation of GaN grown on different substrates at low temperatures 63
Proceedings of Symposium Italian Crystal Growth 99 63
Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy 61
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors 61
The electronic structure of ε-Ga2O3 60
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 59
Dislocation Reduction In Heavily Doped Gallium-arsenide Single-crystals 59
The real structure of ε-Ga2O3 and its relation to κ-phase 59
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains 59
Innovative back-contact for Sb2Se3-based thin film solar cells 58
Effects of Melt Composition On Deep Electronic States and Compensation Ratios In N-type Lec Gallium-arsenide 57
A new approach to free-standing GaN using beta-Ga2O3 as a substrate 57
Ga2O3 polymorphs: Tailoring the epitaxial growth conditions 57
Growth and characterization of bismuth thiourea chloride (BTC) 56
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 56
Indium phosphide 56
Defects and inhomogeneities in GaAs substrates as revealed by DSL photo-etcvhing techniques 55
Photocurrent mapping of Fe-doped semi-insulating InP 55
Gallium Oxide: A Rising Star in The Semiconductor Realm 55
Kristallizationsverfahren zur Erzeugung kristalliner Halbleiterschichten 54
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 54
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts 53
Boron as an anti-surfactant in sublimation growth of AlN single crystals 52
Structural Characterization of Heavily Zn-doped Liquid Encapsulated Czochralski Inp 52
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 52
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 51
Effect of Crystal Orientation On Dislocation Formation In Lec Gaas 51
Annealing-related phenomena in bulk semi-insulating indium phosphide 51
Boron- and stoichiometry-related defect engineering during B(2)O(3)-free GaAs crystal growth 51
Properties of GaAs bulk crystals in high doping regime 50
Improved Crystal-growth Processes For High-quality Iii-v Substrates 50
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 50
A study of iron incorporation in LEG-grown indium phosphide 49
Dislocation-induced by thermal stress in GaAs crystals grown from the melt 49
Growth of Bulk Semiconductors: a Review 49
A new method for calculation of island-size distribution in submonolayer epitaxial growth 48
Bulk Crystal Growth 48
Assessment of phonon scattering-related mobility in β-Ga2O3 48
A study of Indium incorporation efficiency in InGaN grown by MOVPE 48
Bridgman-grown zinc oxide single crystals 47
Dislocation-free Silicon-doped Gallium-arsenide Grown By Lec Procedure 47
Crystal Growth of Materials for Energy Production and Energy-saving Applications 46
A Study of Structural-properties of Bulk Double-doped Inp By Laser Scattering Tomography and Photoetching 46
Gallium arsenide single crystals with low dislocation density and high purity 45
Zn3P2 precipitates in dislocation-free LEC InP heavily doped with Zn 44
A vertical reactor for deposition of gallium nitride 44
Vorrichtung und Verfahren zur Züchtung von III-Nitrid Volumenkristallen 44
Kristallisationsanlage und Kristallisationsverfahren 44
METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL 44
La ricerca universitaria a Parma 44
Silicon doped Gallium Arsenide substrates for Photovoltaic applications 43
Si-doping Effect On Electrical-properties of Lec-gaas Crystals 43
Complementary Study of Indentation-induced Dislocations In GaAs and InP By Photoetching, Sem, Spl and Ebic 42
Crystal Growth of Technologically Important Electronic Materials 42
Recent Advances in Bulk Crystal Growth 41
A new approach to grow C-doped GaN thick epitaxial layers 41
Effects of Melt Composition On Structural and Electrical Characteristics of Lec Si-doped Gallium-arsenide 41
Single Crystals of Electronic Materials: Growth and Properties 40
Influence of ingot and wafer annealing on the homogeneity of Fe-doped semiinsulating InP wafers 40
Procedimento per la produzione di fette di InP drogato Ferro con caratteristiche semi-isolanti 40
Verfahren und Vorrichtung zur Herstellung von Zinkoxid-Einkristallen aus einer Schmelze 39
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects 39
Growth of wurtzite InN on bulk In2O3(111) wafers 38
Photoluminescence studies of neutron-transmutation-doped InP : Fe 38
Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods 38
Microprocessor for voltage ramp programmers 38
Indium Phosphide 38
Cathodoluminescence and X-ray Topography Study of Cr Segregation In Lec Grown InP - Cr 37
High-voltage field effect transistors with wide-bandgap β -Ga 2O3 nanomembranes 37
Dopant segregations in oxide single-crystal fibers grown by the micro-pulling-down method 37
Compensating defects in Si-doped AlN bulk crystals 37
Growth of oxide compounds under dynamic atmosphere composition 36
Preparazione di monocristalli di Arseniuro di Gallio 36
Totale 5.741
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Categoria #
all - tutte 39.753
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 39.753
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019464 0 0 0 0 0 0 0 0 0 0 440 24
2019/20202.264 505 729 36 14 60 260 175 79 73 177 74 82
2020/2021650 7 22 15 23 67 38 40 49 195 81 66 47
2021/20221.034 28 29 10 69 52 81 63 114 48 66 25 449
2022/20233.191 502 234 161 227 209 389 43 167 1.120 21 86 32
2023/20241.161 85 119 45 61 128 340 90 99 55 101 38 0
Totale 9.806