FORNARI, Roberto
 Distribuzione geografica
Continente #
NA - Nord America 5.692
AS - Asia 5.043
EU - Europa 4.183
SA - Sud America 674
AF - Africa 65
Continente sconosciuto - Info sul continente non disponibili 18
OC - Oceania 6
Totale 15.681
Nazione #
US - Stati Uniti d'America 5.603
CN - Cina 2.082
SG - Singapore 1.672
IE - Irlanda 914
IT - Italia 768
BR - Brasile 615
HK - Hong Kong 597
FI - Finlandia 581
SE - Svezia 569
TR - Turchia 416
NL - Olanda 380
DE - Germania 281
FR - Francia 201
RU - Federazione Russa 128
GB - Regno Unito 80
IN - India 79
CA - Canada 58
UA - Ucraina 49
RO - Romania 43
JP - Giappone 40
AT - Austria 35
BE - Belgio 32
CZ - Repubblica Ceca 26
PL - Polonia 23
ID - Indonesia 22
BD - Bangladesh 21
MX - Messico 21
IR - Iran 20
ES - Italia 19
EU - Europa 18
CI - Costa d'Avorio 15
VE - Venezuela 14
CH - Svizzera 13
AR - Argentina 12
EC - Ecuador 12
IQ - Iraq 12
TN - Tunisia 12
MA - Marocco 10
LT - Lituania 9
LB - Libano 8
UZ - Uzbekistan 8
CM - Camerun 6
CO - Colombia 6
DZ - Algeria 6
KR - Corea 6
NP - Nepal 6
AU - Australia 5
PK - Pakistan 5
VN - Vietnam 5
ZA - Sudafrica 5
AL - Albania 4
AZ - Azerbaigian 4
BO - Bolivia 4
KE - Kenya 4
KG - Kirghizistan 4
LV - Lettonia 4
NG - Nigeria 4
PE - Perù 4
PT - Portogallo 4
SA - Arabia Saudita 4
AM - Armenia 3
BG - Bulgaria 3
CL - Cile 3
JO - Giordania 3
OM - Oman 3
PA - Panama 3
SK - Slovacchia (Repubblica Slovacca) 3
TW - Taiwan 3
AE - Emirati Arabi Uniti 2
BY - Bielorussia 2
DO - Repubblica Dominicana 2
HN - Honduras 2
HU - Ungheria 2
IL - Israele 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LK - Sri Lanka 2
LU - Lussemburgo 2
MY - Malesia 2
NO - Norvegia 2
PY - Paraguay 2
SN - Senegal 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
BH - Bahrain 1
BN - Brunei Darussalam 1
CY - Cipro 1
DK - Danimarca 1
EG - Egitto 1
GT - Guatemala 1
HR - Croazia 1
IS - Islanda 1
MC - Monaco 1
MD - Moldavia 1
MM - Myanmar 1
MN - Mongolia 1
NZ - Nuova Zelanda 1
PH - Filippine 1
RS - Serbia 1
TH - Thailandia 1
Totale 15.680
Città #
Singapore 1.018
Dublin 906
Chandler 738
Beijing 612
Santa Clara 599
Hong Kong 589
Ashburn 486
Nanjing 353
Izmir 352
Boardman 328
Ann Arbor 297
Dearborn 287
Parma 280
Princeton 240
Wilmington 171
Helsinki 121
Kunming 117
Shanghai 104
Hefei 100
Shenyang 100
Jacksonville 98
Nanchang 97
Seattle 92
San Mateo 89
Strasbourg 88
Columbus 81
Hebei 77
Grafing 72
Moscow 72
Los Angeles 70
New York 67
Jinan 62
Munich 58
Guangzhou 51
São Paulo 46
Jiaxing 45
Woodbridge 45
Milan 42
Changsha 40
Kocaeli 39
Tianjin 36
Norwalk 35
The Dalles 34
Houston 30
Brussels 29
Bremen 26
Des Moines 26
Amsterdam 24
Rome 24
Vienna 24
Tokyo 23
Council Bluffs 22
Jakarta 22
Marseille 21
Toronto 21
Turku 21
Berlin 19
Nuremberg 19
Bologna 18
Brno 18
Hangzhou 18
Modena 18
Rio de Janeiro 18
Dallas 17
Chicago 16
Abidjan 15
Fremont 15
Mumbai 15
Warsaw 15
Bengaluru 14
Mestre 14
Phoenix 14
Zhengzhou 14
Brasília 13
Brooklyn 13
Chengdu 13
San Francisco 13
Belo Horizonte 12
Istanbul 12
London 12
Shaoxing 12
Cambridge 10
Chongqing 10
Curitiba 10
Ningbo 10
Ottawa 10
Taiyuan 10
Timisoara 10
Borås 9
Charlotte 9
Domnești 9
Frankfurt am Main 9
Haikou 9
Pittsburgh 9
Pune 9
Wuhan 9
Cremona 8
Praia Grande 8
Aubagne 7
Campinas 7
Totale 10.096
Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 172
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 160
Thermal stability of ε-Ga2O3 polymorph 158
Influence of growth parameters on the residual strain in 3C-SiC epitaxial layers on (001) silicon 130
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 125
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 124
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD 123
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 123
Si and Sn doping of ε-Ga2O3 layers 122
Sol-gel growth and characterization of In2O3 thin films 119
Thermal expansion coefficients of beta-Ga2O3 single crystals 115
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 115
Substrates of wide bandgap materials 113
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 111
Homogeneity of Fe-doped InP wafers using optical microprobes 110
Proc. 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies 110
Bulk Crystal Growth of Semiconductors: An Overview 110
Characterization of HVPE GaN layers by Atomic Force Microscopy and Raman spectroscopy 108
Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3 107
Progress in MOVPE growth of Ga2O3 106
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 106
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 104
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 103
Crystal structure and ferroelectric properties of ϵ-Ga2O3 films grown on (0001)-sapphire 100
Proceedings of Symposium Italian Crystal Growth 99 98
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 97
Innovative back-contact for Sb2Se3-based thin film solar cells 96
Effect of growth parameters on iron incorporation in semi-insulating LEC indium phosphide 94
The electronic structure of ε-Ga2O3 91
A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method 91
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 90
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains 90
Aligned AlN nanowires by self-organized vapor-solid growth 89
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 89
Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal 88
Ga2O3 polymorphs: Tailoring the epitaxial growth conditions 88
Coloration of Wide-Bandgap Semiconductors Originating from Particle Plasmons 88
The real structure of ε-Ga2O3 and its relation to κ-phase 87
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 86
Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy 84
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors 84
Gallium Oxide: A Rising Star in The Semiconductor Realm 84
AFM observation of GaN grown on different substrates at low temperatures 83
P-type Doping of Epitaxial 3C-SiC Layers on Silicon (001) 83
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts 80
A new approach to free-standing GaN using beta-Ga2O3 as a substrate 79
Annealing-related phenomena in bulk semi-insulating indium phosphide 79
Dislocation Reduction In Heavily Doped Gallium-arsenide Single-crystals 77
Dislocation-induced by thermal stress in GaAs crystals grown from the melt 77
A Study of Structural-properties of Bulk Double-doped Inp By Laser Scattering Tomography and Photoetching 76
Growth and characterization of bismuth thiourea chloride (BTC) 76
Effects of Melt Composition On Deep Electronic States and Compensation Ratios In N-type Lec Gallium-arsenide 75
Photocurrent mapping of Fe-doped semi-insulating InP 75
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 75
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 74
Effect of Crystal Orientation On Dislocation Formation In Lec Gaas 74
Defects and inhomogeneities in GaAs substrates as revealed by DSL photo-etcvhing techniques 74
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 74
Improved Crystal-growth Processes For High-quality Iii-v Substrates 73
A study of iron incorporation in LEG-grown indium phosphide 73
Kristallizationsverfahren zur Erzeugung kristalliner Halbleiterschichten 73
Dislocation-free Silicon-doped Gallium-arsenide Grown By Lec Procedure 72
Assessment of phonon scattering-related mobility in β-Ga2O3 71
A study of Indium incorporation efficiency in InGaN grown by MOVPE 71
Indium phosphide 71
A vertical reactor for deposition of gallium nitride 70
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 70
Properties of GaAs bulk crystals in high doping regime 69
A new method for calculation of island-size distribution in submonolayer epitaxial growth 69
Growth of Bulk Semiconductors: a Review 68
Bulk Crystal Growth 68
Boron as an anti-surfactant in sublimation growth of AlN single crystals 68
Boron- and stoichiometry-related defect engineering during B(2)O(3)-free GaAs crystal growth 67
Structural Characterization of Heavily Zn-doped Liquid Encapsulated Czochralski Inp 67
Silicon doped Gallium Arsenide substrates for Photovoltaic applications 66
Si-doping Effect On Electrical-properties of Lec-gaas Crystals 66
Bridgman-grown zinc oxide single crystals 65
Electrical properties of beta-Ga2O3 single crystals grown by the Czochralski method 65
Gallium arsenide single crystals with low dislocation density and high purity 65
Crystal Growth of Materials for Energy Production and Energy-saving Applications 65
A new approach to grow C-doped GaN thick epitaxial layers 65
Czochralski growth of Ti:Sapphire laser crystals 65
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 65
Comprehensive Semiconductors Science and Technology Second Edition 63
Vorrichtung und Verfahren zur Züchtung von III-Nitrid Volumenkristallen 63
Kristallisationsanlage und Kristallisationsverfahren 61
Influence of ingot and wafer annealing on the homogeneity of Fe-doped semiinsulating InP wafers 61
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 60
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique 60
Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods 60
Crystal Growth of Technologically Important Electronic Materials 60
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects 60
Comprehensive Semiconductor Science and Technology 59
Effects of Melt Composition On Structural and Electrical Characteristics of Lec Si-doped Gallium-arsenide 59
METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL 59
Recent Advances in Bulk Crystal Growth 58
La ricerca universitaria a Parma 57
Epitaxial growth of gallium oxide and related materials by CVD methods 56
Zn3P2 precipitates in dislocation-free LEC InP heavily doped with Zn 56
Growth of wurtzite InN on bulk In2O3(111) wafers 56
Totale 8.434
Categoria #
all - tutte 70.547
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 70.547


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021650 7 22 15 23 67 38 40 49 195 81 66 47
2021/20221.034 28 29 10 69 52 81 63 114 48 66 25 449
2022/20233.191 502 234 161 227 209 389 43 167 1.120 21 86 32
2023/20241.484 85 119 45 61 128 340 90 99 55 101 81 280
2024/20255.841 91 319 337 243 697 629 405 293 741 582 429 1.075
2025/202635 35 0 0 0 0 0 0 0 0 0 0 0
Totale 16.005