IRIS
FORNARI, Roberto
 Distribuzione geografica
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Continente #
NA - Nord America 5.323
AS - Asia 4.182
EU - Europa 4.021
SA - Sud America 523
AF - Africa 56
Continente sconosciuto - Info sul continente non disponibili 18
OC - Oceania 5
Totale 14.128
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Nazione #
US - Stati Uniti d'America 5.265
CN - Cina 2.000
SG - Singapore 1.524
IE - Irlanda 912
IT - Italia 748
SE - Svezia 564
FI - Finlandia 560
BR - Brasile 471
TR - Turchia 413
NL - Olanda 378
DE - Germania 233
FR - Francia 185
RU - Federazione Russa 121
GB - Regno Unito 58
IN - India 56
UA - Ucraina 48
CA - Canada 43
RO - Romania 43
JP - Giappone 37
AT - Austria 33
BE - Belgio 32
HK - Hong Kong 30
CZ - Repubblica Ceca 26
ID - Indonesia 22
EU - Europa 18
IR - Iran 16
PL - Polonia 16
CI - Costa d'Avorio 15
CH - Svizzera 13
VE - Venezuela 12
AR - Argentina 11
EC - Ecuador 11
ES - Italia 11
MA - Marocco 10
MX - Messico 10
BD - Bangladesh 9
LT - Lituania 9
TN - Tunisia 9
IQ - Iraq 7
LB - Libano 7
UZ - Uzbekistan 7
CM - Camerun 6
KR - Corea 6
NP - Nepal 6
AU - Australia 4
AZ - Azerbaigian 4
CO - Colombia 4
DZ - Algeria 4
KG - Kirghizistan 4
LV - Lettonia 4
NG - Nigeria 4
PE - Perù 4
PK - Pakistan 4
PT - Portogallo 4
ZA - Sudafrica 4
AL - Albania 3
BG - Bulgaria 3
BO - Bolivia 3
CL - Cile 3
OM - Oman 3
SK - Slovacchia (Repubblica Slovacca) 3
TW - Taiwan 3
AE - Emirati Arabi Uniti 2
AM - Armenia 2
BY - Bielorussia 2
DO - Repubblica Dominicana 2
HU - Ungheria 2
IL - Israele 2
JO - Giordania 2
KE - Kenya 2
LA - Repubblica Popolare Democratica del Laos 2
LK - Sri Lanka 2
LU - Lussemburgo 2
MY - Malesia 2
NO - Norvegia 2
PY - Paraguay 2
UY - Uruguay 2
BN - Brunei Darussalam 1
CY - Cipro 1
DK - Danimarca 1
EG - Egitto 1
GT - Guatemala 1
HN - Honduras 1
HR - Croazia 1
IS - Islanda 1
KZ - Kazakistan 1
MC - Monaco 1
MD - Moldavia 1
MM - Myanmar 1
MN - Mongolia 1
NZ - Nuova Zelanda 1
PA - Panama 1
PH - Filippine 1
RS - Serbia 1
SA - Arabia Saudita 1
SN - Senegal 1
TH - Thailandia 1
TM - Turkmenistan 1
VN - Vietnam 1
Totale 14.128
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Città #
Dublin 904
Singapore 871
Chandler 738
Santa Clara 594
Beijing 555
Ashburn 465
Nanjing 353
Izmir 352
Boardman 328
Ann Arbor 297
Dearborn 287
Parma 277
Princeton 240
Wilmington 171
Helsinki 121
Kunming 117
Shanghai 104
Shenyang 100
Jacksonville 98
Nanchang 97
Seattle 91
San Mateo 89
Strasbourg 88
Hefei 85
Hebei 77
Grafing 72
Moscow 72
Jinan 62
Los Angeles 62
New York 59
Guangzhou 51
Jiaxing 45
Woodbridge 45
Milan 42
Changsha 40
Kocaeli 39
Tianjin 36
Norwalk 35
São Paulo 32
Houston 30
Brussels 29
Bremen 26
Des Moines 26
Amsterdam 24
Rome 24
Vienna 23
Council Bluffs 22
Hong Kong 22
Jakarta 22
Tokyo 22
Marseille 21
Berlin 19
Brno 18
Hangzhou 18
Nuremberg 18
Modena 17
Bologna 16
Toronto 16
Abidjan 15
Fremont 15
Mestre 14
Mumbai 14
Rio de Janeiro 14
Zhengzhou 14
Chengdu 13
Munich 13
Dallas 12
Shaoxing 12
Belo Horizonte 11
Brasília 11
Chicago 11
Istanbul 11
Cambridge 10
Chongqing 10
Ningbo 10
Ottawa 10
Taiyuan 10
Timisoara 10
Warsaw 10
Borås 9
Curitiba 9
Domnești 9
Haikou 9
Pune 9
Wuhan 9
Cremona 8
Phoenix 8
Pittsburgh 8
Aubagne 7
Falls Church 7
Frankfurt am Main 7
Heidelberg 7
Leawood 7
Madrid 7
Redwood City 7
Reggio Nell'emilia 7
Rockville 7
Trento 7
Washington 7
Ardabil 6
Totale 9.015
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 164
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 153
Thermal stability of ε-Ga2O3 polymorph 148
Influence of growth parameters on the residual strain in 3C-SiC epitaxial layers on (001) silicon 125
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 120
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD 118
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 117
Si and Sn doping of ε-Ga2O3 layers 117
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 117
Sol-gel growth and characterization of In2O3 thin films 115
Thermal expansion coefficients of beta-Ga2O3 single crystals 110
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 110
Homogeneity of Fe-doped InP wafers using optical microprobes 106
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 105
Substrates of wide bandgap materials 104
Characterization of HVPE GaN layers by Atomic Force Microscopy and Raman spectroscopy 103
Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3 103
Progress in MOVPE growth of Ga2O3 101
Bulk Crystal Growth of Semiconductors: An Overview 101
Proc. 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies 100
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 99
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 99
Crystal structure and ferroelectric properties of ϵ-Ga2O3 films grown on (0001)-sapphire 90
Proceedings of Symposium Italian Crystal Growth 99 90
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 89
Effect of growth parameters on iron incorporation in semi-insulating LEC indium phosphide 88
Innovative back-contact for Sb2Se3-based thin film solar cells 86
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains 86
A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method 85
The electronic structure of ε-Ga2O3 84
Coloration of Wide-Bandgap Semiconductors Originating from Particle Plasmons 84
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 83
Aligned AlN nanowires by self-organized vapor-solid growth 83
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 83
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 82
Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal 81
Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy 78
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors 78
The real structure of ε-Ga2O3 and its relation to κ-phase 78
AFM observation of GaN grown on different substrates at low temperatures 78
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts 77
Ga2O3 polymorphs: Tailoring the epitaxial growth conditions 76
P-type Doping of Epitaxial 3C-SiC Layers on Silicon (001) 76
Gallium Oxide: A Rising Star in The Semiconductor Realm 75
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 74
Annealing-related phenomena in bulk semi-insulating indium phosphide 73
Dislocation Reduction In Heavily Doped Gallium-arsenide Single-crystals 72
A Study of Structural-properties of Bulk Double-doped Inp By Laser Scattering Tomography and Photoetching 72
Growth and characterization of bismuth thiourea chloride (BTC) 72
A new approach to free-standing GaN using beta-Ga2O3 as a substrate 71
Defects and inhomogeneities in GaAs substrates as revealed by DSL photo-etcvhing techniques 70
Photocurrent mapping of Fe-doped semi-insulating InP 70
Dislocation-induced by thermal stress in GaAs crystals grown from the melt 70
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 70
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 70
A study of iron incorporation in LEG-grown indium phosphide 69
Effects of Melt Composition On Deep Electronic States and Compensation Ratios In N-type Lec Gallium-arsenide 69
Effect of Crystal Orientation On Dislocation Formation In Lec Gaas 68
Kristallizationsverfahren zur Erzeugung kristalliner Halbleiterschichten 68
Dislocation-free Silicon-doped Gallium-arsenide Grown By Lec Procedure 67
A study of Indium incorporation efficiency in InGaN grown by MOVPE 67
Indium phosphide 67
Improved Crystal-growth Processes For High-quality Iii-v Substrates 66
Assessment of phonon scattering-related mobility in β-Ga2O3 66
Properties of GaAs bulk crystals in high doping regime 65
A vertical reactor for deposition of gallium nitride 64
A new method for calculation of island-size distribution in submonolayer epitaxial growth 64
Growth of Bulk Semiconductors: a Review 64
Boron- and stoichiometry-related defect engineering during B(2)O(3)-free GaAs crystal growth 64
Structural Characterization of Heavily Zn-doped Liquid Encapsulated Czochralski Inp 64
Boron as an anti-surfactant in sublimation growth of AlN single crystals 63
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 61
Silicon doped Gallium Arsenide substrates for Photovoltaic applications 60
Gallium arsenide single crystals with low dislocation density and high purity 60
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 60
Si-doping Effect On Electrical-properties of Lec-gaas Crystals 59
Bulk Crystal Growth 59
A new approach to grow C-doped GaN thick epitaxial layers 59
Czochralski growth of Ti:Sapphire laser crystals 58
Bridgman-grown zinc oxide single crystals 57
Vorrichtung und Verfahren zur Züchtung von III-Nitrid Volumenkristallen 57
Crystal Growth of Materials for Energy Production and Energy-saving Applications 57
Kristallisationsanlage und Kristallisationsverfahren 56
METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL 56
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 56
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique 55
Effects of Melt Composition On Structural and Electrical Characteristics of Lec Si-doped Gallium-arsenide 55
Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods 55
Recent Advances in Bulk Crystal Growth 54
Comprehensive Semiconductor Science and Technology 54
Single Crystals of Electronic Materials: Growth and Properties 54
Influence of ingot and wafer annealing on the homogeneity of Fe-doped semiinsulating InP wafers 54
La ricerca universitaria a Parma 54
Zn3P2 precipitates in dislocation-free LEC InP heavily doped with Zn 53
Electrical properties of beta-Ga2O3 single crystals grown by the Czochralski method 53
Crystal Growth of Technologically Important Electronic Materials 53
Cathodoluminescence and X-ray Topography Study of Cr Segregation In Lec Grown InP - Cr 52
Electronic materials and crystal growth 52
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects 52
Complementary Study of Indentation-induced Dislocations In GaAs and InP By Photoetching, Sem, Spl and Ebic 51
Totale 7.800
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Categoria #
all - tutte 65.379
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 65.379
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020333 0 0 0 0 0 0 0 0 0 177 74 82
2020/2021650 7 22 15 23 67 38 40 49 195 81 66 47
2021/20221.034 28 29 10 69 52 81 63 114 48 66 25 449
2022/20233.191 502 234 161 227 209 389 43 167 1.120 21 86 32
2023/20241.484 85 119 45 61 128 340 90 99 55 101 81 280
2024/20254.320 91 319 337 243 697 629 405 293 741 565 0 0
Totale 14.449