FORNARI, Roberto
 Distribuzione geografica
Continente #
AS - Asia 10.977
NA - Nord America 10.459
EU - Europa 5.273
SA - Sud America 1.586
AF - Africa 536
Continente sconosciuto - Info sul continente non disponibili 361
OC - Oceania 9
Totale 29.201
Nazione #
US - Stati Uniti d'America 10.149
SG - Singapore 4.068
CN - Cina 2.975
VN - Vietnam 1.507
BR - Brasile 1.236
IT - Italia 1.102
IE - Irlanda 925
HK - Hong Kong 875
SE - Svezia 590
FI - Finlandia 588
FR - Francia 507
TR - Turchia 444
NL - Olanda 394
ZA - Sudafrica 366
DE - Germania 349
BD - Bangladesh 280
GB - Regno Unito 217
RU - Federazione Russa 196
IN - India 180
CA - Canada 131
AR - Argentina 128
MX - Messico 103
JP - Giappone 92
IQ - Iraq 72
UA - Ucraina 67
EC - Ecuador 58
ID - Indonesia 55
KR - Corea 53
PL - Polonia 52
AT - Austria 51
PH - Filippine 49
ES - Italia 47
RO - Romania 45
VE - Venezuela 44
PK - Pakistan 35
BE - Belgio 32
CO - Colombia 32
MA - Marocco 31
UZ - Uzbekistan 30
CZ - Repubblica Ceca 29
SA - Arabia Saudita 28
IR - Iran 25
TN - Tunisia 25
CL - Cile 23
PY - Paraguay 23
TH - Thailandia 23
TW - Taiwan 22
DZ - Algeria 21
PE - Perù 19
CI - Costa d'Avorio 18
EU - Europa 18
KE - Kenya 18
MY - Malesia 17
NP - Nepal 16
EG - Egitto 15
JO - Giordania 15
UY - Uruguay 15
AE - Emirati Arabi Uniti 14
CH - Svizzera 14
CR - Costa Rica 14
KG - Kirghizistan 11
LT - Lituania 11
AZ - Azerbaigian 10
LB - Libano 10
TT - Trinidad e Tobago 10
AL - Albania 9
ET - Etiopia 9
NG - Nigeria 9
OM - Oman 9
AU - Australia 8
BO - Bolivia 8
JM - Giamaica 8
KZ - Kazakistan 8
DO - Repubblica Dominicana 7
GT - Guatemala 7
PA - Panama 7
PS - Palestinian Territory 7
AM - Armenia 6
BG - Bulgaria 6
CM - Camerun 6
SN - Senegal 6
SY - Repubblica araba siriana 6
BB - Barbados 5
HU - Ungheria 5
IL - Israele 5
BH - Bahrain 4
BN - Brunei Darussalam 4
BY - Bielorussia 4
HN - Honduras 4
KW - Kuwait 4
LV - Lettonia 4
NI - Nicaragua 4
PT - Portogallo 4
RS - Serbia 4
XK - ???statistics.table.value.countryCode.XK??? 4
GE - Georgia 3
HR - Croazia 3
LK - Sri Lanka 3
LU - Lussemburgo 3
NO - Norvegia 3
Totale 28.815
Città #
Singapore 1.850
San Jose 1.442
Ashburn 1.293
Dublin 916
Hong Kong 825
Beijing 801
Chandler 738
Santa Clara 672
Council Bluffs 478
Dallas 478
Ho Chi Minh City 477
Boardman 397
Nanjing 355
Izmir 353
Johannesburg 340
Hanoi 328
Parma 314
Ann Arbor 297
Dearborn 288
Lauterbourg 266
Princeton 240
Los Angeles 233
Hefei 175
Wilmington 171
New York 155
Helsinki 123
Shanghai 119
Kunming 118
São Paulo 110
Shenyang 102
Columbus 100
Jacksonville 100
Seattle 99
Nanchang 98
San Mateo 89
Strasbourg 88
Milan 84
Hebei 77
Moscow 75
Munich 74
Grafing 72
Tokyo 68
Guangzhou 66
Jinan 66
Buffalo 58
Da Nang 55
Tianjin 55
Haiphong 54
The Dalles 49
Brooklyn 47
Changsha 47
Rome 47
Jiaxing 45
Woodbridge 45
Rio de Janeiro 44
Houston 43
Kensington 41
Warsaw 41
Kocaeli 39
Toronto 36
Chicago 35
Norwalk 35
Seoul 35
Mexico City 34
Amsterdam 33
Atlanta 33
Bologna 33
Jakarta 32
Vienna 31
Brussels 29
Montreal 29
Phoenix 29
Baghdad 28
Berlin 28
Bremen 27
Nuremberg 27
Can Tho 26
Des Moines 26
London 25
Orem 25
Tashkent 25
Frankfurt am Main 24
Mumbai 24
Stockholm 24
Biên Hòa 23
Brasília 23
Curitiba 23
Hải Dương 23
Istanbul 23
Turku 23
Chennai 22
San Francisco 22
Hangzhou 21
Marseille 21
Modena 21
Quito 21
Belo Horizonte 20
Pittsburgh 20
Boston 19
Abidjan 18
Totale 17.396
Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 265
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 237
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 233
Thermal stability of ε-Ga2O3 polymorph 228
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 227
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 220
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 212
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD 191
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 189
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 185
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 178
Tetravalent element doping of β-Ga₂O₃ films grown by pulsed electron deposition technique 176
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 175
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 175
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 174
Crystal structure and ferroelectric properties of ϵ-Ga2O3 films grown on (0001)-sapphire 173
Sol-gel growth and characterization of In2O3 thin films 170
Epitaxial growth of gallium oxide and related materials by CVD methods 169
Influence of growth parameters on the residual strain in 3C-SiC epitaxial layers on (001) silicon 167
Bulk Crystal Growth of Semiconductors: An Overview 167
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 166
The real structure of ε-Ga2O3 and its relation to κ-phase 166
Thermal expansion coefficients of beta-Ga2O3 single crystals 166
Si and Sn doping of ε-Ga2O3 layers 164
Innovative back-contact for Sb2Se3-based thin film solar cells 161
Proc. 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies 159
A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method 159
Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3 158
Progress in MOVPE growth of Ga2O3 157
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains 157
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 155
Comprehensive Semiconductors Science and Technology Second Edition 155
Effect of Heterojunction Characteristics and Deep Electronic Levels on the Performance of (Cd,Zn)S/Sb2Se3 Solar Cells 155
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 154
A new approach to free-standing GaN using beta-Ga2O3 as a substrate 154
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 153
The electronic structure of ε-Ga2O3 152
Ga2O3 polymorphs: Tailoring the epitaxial growth conditions 150
Proceedings of Symposium Italian Crystal Growth 99 150
Substrates of wide bandgap materials 150
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 149
Effect of lithium diffusion into Ga2O3 thin films 145
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 145
Design of CsSnBr3/Ga2O3 Hybrid Photodetectors for High UV Selectivity and Bifacial Usage 143
Aligned AlN nanowires by self-organized vapor-solid growth 142
Annealing-related phenomena in bulk semi-insulating indium phosphide 141
A study of Indium incorporation efficiency in InGaN grown by MOVPE 141
Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy 140
Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods 139
Homogeneity of Fe-doped InP wafers using optical microprobes 138
A Study of Structural-properties of Bulk Double-doped Inp By Laser Scattering Tomography and Photoetching 138
Characterization of HVPE GaN layers by Atomic Force Microscopy and Raman spectroscopy 136
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 134
Effect of growth parameters on iron incorporation in semi-insulating LEC indium phosphide 133
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors 133
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 133
AFM observation of GaN grown on different substrates at low temperatures 132
A vertical reactor for deposition of gallium nitride 130
Gallium Oxide: A Rising Star in The Semiconductor Realm 130
Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal 129
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3 128
P-type Doping of Epitaxial 3C-SiC Layers on Silicon (001) 128
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts 128
Boron as an anti-surfactant in sublimation growth of AlN single crystals 127
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 125
A new approach to grow C-doped GaN thick epitaxial layers 123
Czochralski growth of Ti:Sapphire laser crystals 122
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 122
Coloration of Wide-Bandgap Semiconductors Originating from Particle Plasmons 120
Dislocation-induced by thermal stress in GaAs crystals grown from the melt 119
Effect of Crystal Orientation On Dislocation Formation In Lec Gaas 118
A study of iron incorporation in LEG-grown indium phosphide 117
Assessment of phonon scattering-related mobility in β-Ga2O3 116
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique 115
Dislocation-free Silicon-doped Gallium-arsenide Grown By Lec Procedure 114
Growth and characterization of bismuth thiourea chloride (BTC) 114
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 114
Dislocation Reduction In Heavily Doped Gallium-arsenide Single-crystals 113
Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy 112
Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study 111
Photocurrent mapping of Fe-doped semi-insulating InP 111
Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study 110
Defects and inhomogeneities in GaAs substrates as revealed by DSL photo-etcvhing techniques 108
A new method for calculation of island-size distribution in submonolayer epitaxial growth 108
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects 108
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 107
null 107
Improved Crystal-growth Processes For High-quality Iii-v Substrates 107
Effects of Melt Composition On Deep Electronic States and Compensation Ratios In N-type Lec Gallium-arsenide 107
Special issue - Proceedings of the Italian Crystal Growth Symposium, Naples, Italy, 7-9 September 1999 106
Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AIN buffer layer 106
Innovative and sustainable solar cells based on abundant elements on the Earth crust 104
Properties of GaAs bulk crystals in high doping regime 102
METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL 102
Nucleation and faceting in (001) r-GeO2 heteroepitaxy on r-TiO2 by metalorganic vapor phase epitaxy 101
Kristallizationsverfahren zur Erzeugung kristalliner Halbleiterschichten 100
Gallium arsenide single crystals with low dislocation density and high purity 100
Coupled experimental and TCAD analysis of NiO/Ga2O3 photodiodes for UV-C detection applications 99
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors 99
Bridgman-grown zinc oxide single crystals 99
Totale 14.280
Categoria #
all - tutte 113.310
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 113.310


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.006 0 29 10 69 52 81 63 114 48 66 25 449
2022/20233.191 502 234 161 227 209 389 43 167 1.120 21 86 32
2023/20241.484 85 119 45 61 128 340 90 99 55 101 81 280
2024/20255.841 91 319 337 243 697 629 405 293 741 582 429 1.075
2025/202612.298 1.122 1.180 1.478 1.012 1.579 655 1.581 461 1.572 913 441 304
2026/2027933 416 517 0 0 0 0 0 0 0 0 0 0
Totale 29.201