IRIS
FORNARI, Roberto
 Distribuzione geografica
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Continente #
AS - Asia 8.358
NA - Nord America 7.382
EU - Europa 4.535
SA - Sud America 1.392
AF - Africa 431
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 6
Totale 22.123
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Nazione #
US - Stati Uniti d'America 7.183
SG - Singapore 3.480
CN - Cina 2.690
BR - Brasile 1.139
IE - Irlanda 918
IT - Italia 838
HK - Hong Kong 765
SE - Svezia 585
FI - Finlandia 584
VN - Vietnam 429
TR - Turchia 423
NL - Olanda 391
ZA - Sudafrica 315
DE - Germania 311
FR - Francia 215
RU - Federazione Russa 194
GB - Regno Unito 141
IN - India 115
AR - Argentina 94
CA - Canada 94
MX - Messico 71
JP - Giappone 69
BD - Bangladesh 66
UA - Ucraina 61
AT - Austria 48
EC - Ecuador 47
PL - Polonia 47
KR - Corea 44
RO - Romania 44
IQ - Iraq 40
ID - Indonesia 39
BE - Belgio 32
ES - Italia 32
VE - Venezuela 29
CZ - Repubblica Ceca 27
IR - Iran 24
PK - Pakistan 24
MA - Marocco 23
UZ - Uzbekistan 21
PY - Paraguay 20
CO - Colombia 19
EU - Europa 18
SA - Arabia Saudita 17
TN - Tunisia 17
CI - Costa d'Avorio 16
CH - Svizzera 13
CL - Cile 13
DZ - Algeria 13
PE - Perù 13
UY - Uruguay 13
KE - Kenya 12
AE - Emirati Arabi Uniti 11
LT - Lituania 11
EG - Egitto 10
NP - Nepal 9
KG - Kirghizistan 8
LB - Libano 8
JO - Giordania 7
AL - Albania 6
AM - Armenia 6
AZ - Azerbaigian 6
BG - Bulgaria 6
CM - Camerun 6
KZ - Kazakistan 6
TW - Taiwan 6
AU - Australia 5
BO - Bolivia 5
IL - Israele 5
MY - Malesia 5
NG - Nigeria 5
SN - Senegal 5
BN - Brunei Darussalam 4
DO - Repubblica Dominicana 4
HN - Honduras 4
LV - Lettonia 4
OM - Oman 4
PA - Panama 4
PH - Filippine 4
PT - Portogallo 4
TT - Trinidad e Tobago 4
BB - Barbados 3
BH - Bahrain 3
BY - Bielorussia 3
CR - Costa Rica 3
ET - Etiopia 3
GT - Guatemala 3
HU - Ungheria 3
KW - Kuwait 3
LK - Sri Lanka 3
LU - Lussemburgo 3
PS - Palestinian Territory 3
RS - Serbia 3
SK - Slovacchia (Repubblica Slovacca) 3
CY - Cipro 2
HR - Croazia 2
LA - Repubblica Popolare Democratica del Laos 2
NI - Nicaragua 2
NO - Norvegia 2
TH - Thailandia 2
BS - Bahamas 1
Totale 22.100
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Città #
Singapore 1.669
Ashburn 1.036
Dublin 909
Beijing 775
Hong Kong 756
Chandler 738
Santa Clara 618
Dallas 456
Nanjing 355
Izmir 352
Boardman 337
Parma 303
Johannesburg 301
Ann Arbor 297
Dearborn 287
Princeton 240
Ho Chi Minh City 178
Hefei 175
Wilmington 171
Los Angeles 162
Helsinki 121
Kunming 118
Shanghai 110
Shenyang 102
Columbus 100
Jacksonville 100
New York 100
São Paulo 99
Nanchang 97
Seattle 96
Hanoi 93
San Mateo 89
Strasbourg 88
Hebei 77
Moscow 75
Munich 73
Grafing 72
Jinan 66
Guangzhou 61
Tianjin 55
Tokyo 51
Changsha 47
Milan 46
Jiaxing 45
Woodbridge 45
Buffalo 40
Brooklyn 39
Kocaeli 39
Rio de Janeiro 39
Warsaw 39
The Dalles 37
Houston 36
Norwalk 35
Seoul 35
Amsterdam 31
Brussels 29
Toronto 29
Jakarta 28
Rome 28
Vienna 28
Chicago 27
Bremen 26
Des Moines 26
Phoenix 24
Bologna 23
Turku 23
Berlin 22
Brasília 22
Council Bluffs 22
Nuremberg 22
Curitiba 21
Haiphong 21
London 21
Marseille 21
Hangzhou 20
Montreal 20
Stockholm 20
Belo Horizonte 19
San Francisco 19
Brno 18
Chennai 18
Mexico City 18
Modena 18
Tashkent 18
Atlanta 17
Boston 17
Mumbai 17
Quito 17
Abidjan 16
Zhengzhou 16
Baghdad 15
Charlotte 15
Chengdu 15
Fremont 15
Poplar 15
Bengaluru 14
Istanbul 14
Mestre 14
Denver 13
Frankfurt am Main 13
Totale 13.405
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 224
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 194
Thermal stability of ε-Ga2O3 polymorph 194
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 188
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 158
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 155
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD 153
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 152
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 147
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 146
Influence of growth parameters on the residual strain in 3C-SiC epitaxial layers on (001) silicon 145
Si and Sn doping of ε-Ga2O3 layers 143
Crystal structure and ferroelectric properties of ϵ-Ga2O3 films grown on (0001)-sapphire 143
Sol-gel growth and characterization of In2O3 thin films 141
Thermal expansion coefficients of beta-Ga2O3 single crystals 140
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 140
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 139
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 134
Proc. 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies 133
Innovative back-contact for Sb2Se3-based thin film solar cells 132
Progress in MOVPE growth of Ga2O3 132
The electronic structure of ε-Ga2O3 132
Substrates of wide bandgap materials 132
Bulk Crystal Growth of Semiconductors: An Overview 132
Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3 131
A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method 131
The real structure of ε-Ga2O3 and its relation to κ-phase 130
Proceedings of Symposium Italian Crystal Growth 99 129
Characterization of HVPE GaN layers by Atomic Force Microscopy and Raman spectroscopy 125
A new approach to free-standing GaN using beta-Ga2O3 as a substrate 125
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains 124
Aligned AlN nanowires by self-organized vapor-solid growth 123
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 122
Homogeneity of Fe-doped InP wafers using optical microprobes 120
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 120
Ga2O3 polymorphs: Tailoring the epitaxial growth conditions 116
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 115
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 115
Annealing-related phenomena in bulk semi-insulating indium phosphide 114
A study of Indium incorporation efficiency in InGaN grown by MOVPE 114
AFM observation of GaN grown on different substrates at low temperatures 114
Effect of Heterojunction Characteristics and Deep Electronic Levels on the Performance of (Cd,Zn)S/Sb2Se3 Solar Cells 114
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 113
Effect of growth parameters on iron incorporation in semi-insulating LEC indium phosphide 112
Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors 111
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 110
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts 109
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors 108
Coloration of Wide-Bandgap Semiconductors Originating from Particle Plasmons 107
Comprehensive Semiconductors Science and Technology Second Edition 106
P-type Doping of Epitaxial 3C-SiC Layers on Silicon (001) 106
Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal 105
Gallium Oxide: A Rising Star in The Semiconductor Realm 105
Effect of lithium diffusion into Ga2O3 thin films 102
A vertical reactor for deposition of gallium nitride 102
A Study of Structural-properties of Bulk Double-doped Inp By Laser Scattering Tomography and Photoetching 102
Epitaxial growth of gallium oxide and related materials by CVD methods 101
A new approach to grow C-doped GaN thick epitaxial layers 101
Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy 98
Assessment of phonon scattering-related mobility in β-Ga2O3 98
Effect of Crystal Orientation On Dislocation Formation In Lec Gaas 97
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 96
A study of iron incorporation in LEG-grown indium phosphide 96
Dislocation-induced by thermal stress in GaAs crystals grown from the melt 96
Growth and characterization of bismuth thiourea chloride (BTC) 96
Effects of Melt Composition On Deep Electronic States and Compensation Ratios In N-type Lec Gallium-arsenide 95
Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods 95
Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy 94
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 93
Improved Crystal-growth Processes For High-quality Iii-v Substrates 92
Dislocation Reduction In Heavily Doped Gallium-arsenide Single-crystals 92
Photocurrent mapping of Fe-doped semi-insulating InP 92
A new method for calculation of island-size distribution in submonolayer epitaxial growth 92
Defects and inhomogeneities in GaAs substrates as revealed by DSL photo-etcvhing techniques 91
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 91
Czochralski growth of Ti:Sapphire laser crystals 90
A study of convection, striations and interface shape in InP crystals grown by the double-crucible LEC technique 90
Kristallizationsverfahren zur Erzeugung kristalliner Halbleiterschichten 89
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 88
Dislocation-free Silicon-doped Gallium-arsenide Grown By Lec Procedure 88
Boron- and stoichiometry-related defect engineering during B(2)O(3)-free GaAs crystal growth 88
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 88
Bridgman-grown zinc oxide single crystals 87
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects 86
Gallium arsenide single crystals with low dislocation density and high purity 85
Bulk Crystal Growth 85
Growth of Bulk Semiconductors: a Review 84
Structural Characterization of Heavily Zn-doped Liquid Encapsulated Czochralski Inp 83
Design of CsSnBr3/Ga2O3 Hybrid Photodetectors for High UV Selectivity and Bifacial Usage 82
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 82
Properties of GaAs bulk crystals in high doping regime 82
Indium phosphide 82
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3 81
Crystal Growth of Materials for Energy Production and Energy-saving Applications 81
Boron as an anti-surfactant in sublimation growth of AlN single crystals 81
Silicon doped Gallium Arsenide substrates for Photovoltaic applications 80
Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study 79
Comprehensive Semiconductor Science and Technology 79
METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL 79
Tetravalent element doping of β-Ga₂O₃ films grown by pulsed electron deposition technique 78
Totale 11.212
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Categoria #
all - tutte 91.343
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 91.343
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021516 0 0 0 0 0 38 40 49 195 81 66 47
2021/20221.034 28 29 10 69 52 81 63 114 48 66 25 449
2022/20233.191 502 234 161 227 209 389 43 167 1.120 21 86 32
2023/20241.484 85 119 45 61 128 340 90 99 55 101 81 280
2024/20255.841 91 319 337 243 697 629 405 293 741 582 429 1.075
2025/20266.484 1.122 1.180 1.478 1.012 1.579 113 0 0 0 0 0 0
Totale 22.454