IRIS
FORNARI, Roberto
 Distribuzione geografica
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Continente #
NA - Nord America 5.133
AS - Asia 3.576
EU - Europa 3.348
SA - Sud America 38
AF - Africa 36
Continente sconosciuto - Info sul continente non disponibili 18
OC - Oceania 3
Totale 12.152
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Nazione #
US - Stati Uniti d'America 5.091
CN - Cina 1.984
SG - Singapore 1.053
IE - Irlanda 908
IT - Italia 595
SE - Svezia 561
FI - Finlandia 558
TR - Turchia 403
DE - Germania 204
FR - Francia 183
GB - Regno Unito 55
NL - Olanda 53
UA - Ucraina 44
RO - Romania 42
CA - Canada 40
IN - India 40
JP - Giappone 36
BE - Belgio 32
BR - Brasile 32
CZ - Repubblica Ceca 25
EU - Europa 18
IR - Iran 16
PL - Polonia 16
CI - Costa d'Avorio 15
RU - Federazione Russa 14
HK - Hong Kong 12
CH - Svizzera 11
ES - Italia 11
AT - Austria 10
LB - Libano 7
LT - Lituania 7
CM - Camerun 6
KR - Corea 5
TN - Tunisia 5
IQ - Iraq 4
NG - Nigeria 4
PT - Portogallo 4
AU - Australia 3
BG - Bulgaria 3
LV - Lettonia 3
MA - Marocco 3
TW - Taiwan 3
AR - Argentina 2
KE - Kenya 2
NO - Norvegia 2
OM - Oman 2
SK - Slovacchia (Repubblica Slovacca) 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
BD - Bangladesh 1
DK - Danimarca 1
DZ - Algeria 1
EC - Ecuador 1
GT - Guatemala 1
HR - Croazia 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
MC - Monaco 1
MD - Moldavia 1
MX - Messico 1
NP - Nepal 1
PE - Perù 1
PH - Filippine 1
PK - Pakistan 1
PY - Paraguay 1
TH - Thailandia 1
TM - Turkmenistan 1
UZ - Uzbekistan 1
VE - Venezuela 1
VN - Vietnam 1
Totale 12.152
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Città #
Dublin 900
Singapore 831
Chandler 738
Santa Clara 594
Beijing 554
Ashburn 394
Nanjing 353
Izmir 352
Boardman 328
Ann Arbor 297
Dearborn 287
Princeton 240
Parma 206
Wilmington 171
Helsinki 119
Kunming 117
Shanghai 104
Shenyang 101
Jacksonville 98
Nanchang 97
Seattle 90
San Mateo 89
Strasbourg 88
Hefei 85
Hebei 77
Grafing 72
Jinan 62
New York 59
Los Angeles 52
Guangzhou 51
Jiaxing 45
Woodbridge 45
Changsha 40
Milan 40
Kocaeli 39
Tianjin 36
Norwalk 35
Houston 30
Brussels 29
Bremen 26
Marseille 21
Tokyo 21
Des Moines 19
Brno 18
Hangzhou 18
Abidjan 15
Bologna 15
Fremont 15
Toronto 15
Mestre 14
Zhengzhou 14
Berlin 13
Chengdu 13
Munich 13
Dallas 12
Shaoxing 12
Amsterdam 11
Chicago 11
Cambridge 10
Chongqing 10
Istanbul 10
Ningbo 10
Taiyuan 10
Timisoara 10
Vienna 10
Warsaw 10
Borås 9
Domnești 9
Haikou 9
Ottawa 9
Pune 9
Rome 9
Wuhan 9
Cremona 8
Aubagne 7
Falls Church 7
Frankfurt am Main 7
Heidelberg 7
Leawood 7
Madrid 7
Modena 7
Phoenix 7
Pittsburgh 7
Redwood City 7
Reggio Nell'emilia 7
Rockville 7
Trento 7
Washington 7
Ardabil 6
Focsani 6
Fuzhou 6
London 6
Paris 6
Reggio Emilia 6
West Jordan 6
Xian 6
Andover 5
Augusta 5
Civitavecchia 5
Clifton 5
Totale 8.558
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 145
ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors 138
Thermal stability of ε-Ga2O3 polymorph 135
Influence of growth parameters on the residual strain in 3C-SiC epitaxial layers on (001) silicon 121
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD 113
Sol-gel growth and characterization of In2O3 thin films 108
Si and Sn doping of ε-Ga2O3 layers 107
Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films 104
Thermal expansion coefficients of beta-Ga2O3 single crystals 100
Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3 99
Homogeneity of Fe-doped InP wafers using optical microprobes 98
Characterization of HVPE GaN layers by Atomic Force Microscopy and Raman spectroscopy 96
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 96
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 95
Progress in MOVPE growth of Ga2O3 94
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 89
Substrates of wide bandgap materials 89
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 88
Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals 86
Effect of growth parameters on iron incorporation in semi-insulating LEC indium phosphide 85
Proc. 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies 84
Crystal structure and ferroelectric properties of ϵ-Ga2O3 films grown on (0001)-sapphire 81
Coloration of Wide-Bandgap Semiconductors Originating from Particle Plasmons 80
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 80
Innovative back-contact for Sb2Se3-based thin film solar cells 77
Proceedings of Symposium Italian Crystal Growth 99 77
A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method 76
Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal 75
Aligned AlN nanowires by self-organized vapor-solid growth 75
The electronic structure of ε-Ga2O3 75
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains 74
Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy 73
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors 73
Bulk Crystal Growth of Semiconductors: An Overview 73
The real structure of ε-Ga2O3 and its relation to κ-phase 72
P-type Doping of Epitaxial 3C-SiC Layers on Silicon (001) 72
AFM observation of GaN grown on different substrates at low temperatures 70
Gallium Oxide: A Rising Star in The Semiconductor Realm 69
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 69
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 68
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 67
Dislocation Reduction In Heavily Doped Gallium-arsenide Single-crystals 67
A new approach to free-standing GaN using beta-Ga2O3 as a substrate 66
Dislocation-induced by thermal stress in GaAs crystals grown from the melt 66
Ga2O3 polymorphs: Tailoring the epitaxial growth conditions 66
Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts 66
Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3 65
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 64
Effects of Melt Composition On Deep Electronic States and Compensation Ratios In N-type Lec Gallium-arsenide 64
Photocurrent mapping of Fe-doped semi-insulating InP 64
Growth and characterization of bismuth thiourea chloride (BTC) 64
Indium phosphide 64
Kristallizationsverfahren zur Erzeugung kristalliner Halbleiterschichten 63
Defects and inhomogeneities in GaAs substrates as revealed by DSL photo-etcvhing techniques 62
Improved Crystal-growth Processes For High-quality Iii-v Substrates 61
Conduction mechanism and shallow donor properties in silicon-doped ɛ-Ga2O3 thin films: An electron paramagnetic resonance study 61
Effect of Crystal Orientation On Dislocation Formation In Lec Gaas 60
Annealing-related phenomena in bulk semi-insulating indium phosphide 60
Dislocation-free Silicon-doped Gallium-arsenide Grown By Lec Procedure 60
Boron- and stoichiometry-related defect engineering during B(2)O(3)-free GaAs crystal growth 60
Structural Characterization of Heavily Zn-doped Liquid Encapsulated Czochralski Inp 60
Properties of GaAs bulk crystals in high doping regime 59
Growth of Bulk Semiconductors: a Review 59
A study of Indium incorporation efficiency in InGaN grown by MOVPE 59
Boron as an anti-surfactant in sublimation growth of AlN single crystals 59
A Study of Structural-properties of Bulk Double-doped Inp By Laser Scattering Tomography and Photoetching 59
A new method for calculation of island-size distribution in submonolayer epitaxial growth 58
A study of iron incorporation in LEG-grown indium phosphide 57
Assessment of phonon scattering-related mobility in β-Ga2O3 57
Bulk Crystal Growth 56
Silicon doped Gallium Arsenide substrates for Photovoltaic applications 54
Bridgman-grown zinc oxide single crystals 54
Crystal Growth of Materials for Energy Production and Energy-saving Applications 54
A vertical reactor for deposition of gallium nitride 52
Recent Advances in Bulk Crystal Growth 52
Vorrichtung und Verfahren zur Züchtung von III-Nitrid Volumenkristallen 52
Kristallisationsanlage und Kristallisationsverfahren 52
Gallium arsenide single crystals with low dislocation density and high purity 52
METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL 52
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 52
Zn3P2 precipitates in dislocation-free LEC InP heavily doped with Zn 51
Si-doping Effect On Electrical-properties of Lec-gaas Crystals 51
La ricerca universitaria a Parma 51
A new approach to grow C-doped GaN thick epitaxial layers 50
Effects of Melt Composition On Structural and Electrical Characteristics of Lec Si-doped Gallium-arsenide 50
Cathodoluminescence and X-ray Topography Study of Cr Segregation In Lec Grown InP - Cr 49
Single Crystals of Electronic Materials: Growth and Properties 49
Crystal Growth of Technologically Important Electronic Materials 49
Complementary Study of Indentation-induced Dislocations In GaAs and InP By Photoetching, Sem, Spl and Ebic 48
Czochralski growth of Ti:Sapphire laser crystals 48
Influence of ingot and wafer annealing on the homogeneity of Fe-doped semiinsulating InP wafers 48
Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods 48
Electronic materials and crystal growth 48
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects 48
Growth of wurtzite InN on bulk In2O3(111) wafers 47
Procedimento per la produzione di fette di InP drogato Ferro con caratteristiche semi-isolanti 47
Melt growth, characterization and properties of bulk In2O3 single crystals 46
Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering - A case study on indium oxide 46
Verfahren und Vorrichtung zur Herstellung von Zinkoxid-Einkristallen aus einer Schmelze 46
Dopant segregations in oxide single-crystal fibers grown by the micro-pulling-down method 46
Totale 6.924
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Categoria #
all - tutte 55.478
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 55.478
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020920 0 0 0 0 0 260 175 79 73 177 74 82
2020/2021650 7 22 15 23 67 38 40 49 195 81 66 47
2021/20221.034 28 29 10 69 52 81 63 114 48 66 25 449
2022/20233.191 502 234 161 227 209 389 43 167 1.120 21 86 32
2023/20241.484 85 119 45 61 128 340 90 99 55 101 81 280
2024/20252.291 91 319 337 243 698 603 0 0 0 0 0 0
Totale 12.420