Depending on growth and annealing conditions ZnO crystals can show a reddish coloration clearly deviating from the normal, colorless transparency. The additional broad near-edge absorption is observed when particles of few nanometer diameter are present in the crystals. Excitation of plasmons in Zn nanoparticles can explain this absorption.

Coloration of Wide-Bandgap Semiconductors Originating from Particle Plasmons / K., Irmscher; M., Albrecht; B., Heimbrodt; M., Naumann; T., Remmele; D., Schulz; Fornari, Roberto. - ELETTRONICO. - 1199:(2009), pp. 101-102. (Intervento presentato al convegno 29th International Conference on Physics of Semiconductors, ICPS 29 tenutosi a Rio de Janeiro nel 27 July 2008 - 1 August 2008).

Coloration of Wide-Bandgap Semiconductors Originating from Particle Plasmons

FORNARI, Roberto
2009-01-01

Abstract

Depending on growth and annealing conditions ZnO crystals can show a reddish coloration clearly deviating from the normal, colorless transparency. The additional broad near-edge absorption is observed when particles of few nanometer diameter are present in the crystals. Excitation of plasmons in Zn nanoparticles can explain this absorption.
2009
Coloration of Wide-Bandgap Semiconductors Originating from Particle Plasmons / K., Irmscher; M., Albrecht; B., Heimbrodt; M., Naumann; T., Remmele; D., Schulz; Fornari, Roberto. - ELETTRONICO. - 1199:(2009), pp. 101-102. (Intervento presentato al convegno 29th International Conference on Physics of Semiconductors, ICPS 29 tenutosi a Rio de Janeiro nel 27 July 2008 - 1 August 2008).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2683985
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