Gallium oxide (Ga2O3) is an ultra-wide bandgap material, which has recently attracted widespread attention for holding promising applications in power electronics and solar blind UV photodetectors, outclassing GaN or SiC in terms of a larger bandgap and higher breakdown voltages. The orthorhombic κ phase (also referred to as ε) has sparked particular interest for offering higher symmetry than β, while featuring ferroelectric behavior paired with a large predicted spontaneous polarization, paving the way to fabricating high-quality two-dimensional electron gases for application in heterostructure field effect transistors. The presently available κ phase samples are characterized by a domain structure, in which orthorhombic domains are rotated 120° against each other within thec-plane forming a pseudo-hexagonal structure, which has previously often been ascribed to ε-Ga2O3and incorrectly been viewed as this polymorph's true crystal structure. A detailed investigation into the phonon modes of orthorhombic κ-Ga2O3provides insights into fundamental material properties such as crystal structure and orientation as well as the vibrational symmetries of Raman active modes. We investigate the Raman active phonon modes of an MBE-grown orthorhombic κ-Ga2O3thin film featuring the domain structure deposited on (0001)-Al2O3by experiment and theory: Polarized micro-Raman spectroscopy measurements in conjunction with density functional perturbation theory (DFPT) calculations enable the identification of both the frequencies and vibrational symmetries of the Raman active phonons. Presenting comprehensive Raman spectra of the orthorhombicκphase, the experimental frequencies of more than 90 Raman modes are determined and correlated with the 117 modes predicted by the calculations. Angular-resolved Raman measurements are utilized to provide an experimental verification of phonon mode symmetries. We present an analytical tool to deal with the domain structure and its effect on the obtained Raman spectra. © The Royal Society of Chemistry 2021.

Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains / Janzen, Benjamin M.; Mazzolini, Piero; Gillen, Roland; Peltason, Vivien F. S.; Grote, Linus P.; Maultzsch, Janina; Fornari, Roberto; Bierwagen, Oliver; Wagner, Markus R.. - In: JOURNAL OF MATERIALS CHEMISTRY. C. - ISSN 2050-7526. - 9:40(2021), pp. 14175-14189. [10.1039/D1TC03500B]

Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains

Mazzolini, Piero
Writing – Original Draft Preparation
;
Fornari, Roberto
Writing – Original Draft Preparation
;
2021

Abstract

Gallium oxide (Ga2O3) is an ultra-wide bandgap material, which has recently attracted widespread attention for holding promising applications in power electronics and solar blind UV photodetectors, outclassing GaN or SiC in terms of a larger bandgap and higher breakdown voltages. The orthorhombic κ phase (also referred to as ε) has sparked particular interest for offering higher symmetry than β, while featuring ferroelectric behavior paired with a large predicted spontaneous polarization, paving the way to fabricating high-quality two-dimensional electron gases for application in heterostructure field effect transistors. The presently available κ phase samples are characterized by a domain structure, in which orthorhombic domains are rotated 120° against each other within thec-plane forming a pseudo-hexagonal structure, which has previously often been ascribed to ε-Ga2O3and incorrectly been viewed as this polymorph's true crystal structure. A detailed investigation into the phonon modes of orthorhombic κ-Ga2O3provides insights into fundamental material properties such as crystal structure and orientation as well as the vibrational symmetries of Raman active modes. We investigate the Raman active phonon modes of an MBE-grown orthorhombic κ-Ga2O3thin film featuring the domain structure deposited on (0001)-Al2O3by experiment and theory: Polarized micro-Raman spectroscopy measurements in conjunction with density functional perturbation theory (DFPT) calculations enable the identification of both the frequencies and vibrational symmetries of the Raman active phonons. Presenting comprehensive Raman spectra of the orthorhombicκphase, the experimental frequencies of more than 90 Raman modes are determined and correlated with the 117 modes predicted by the calculations. Angular-resolved Raman measurements are utilized to provide an experimental verification of phonon mode symmetries. We present an analytical tool to deal with the domain structure and its effect on the obtained Raman spectra. © The Royal Society of Chemistry 2021.
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains / Janzen, Benjamin M.; Mazzolini, Piero; Gillen, Roland; Peltason, Vivien F. S.; Grote, Linus P.; Maultzsch, Janina; Fornari, Roberto; Bierwagen, Oliver; Wagner, Markus R.. - In: JOURNAL OF MATERIALS CHEMISTRY. C. - ISSN 2050-7526. - 9:40(2021), pp. 14175-14189. [10.1039/D1TC03500B]
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/2902160
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 1
social impact