Growth of gallium oxide thin films was carried out by Metalorganic Chemical Vapor Deposition (MOCVD) at different temperatures.Pure ε-phase epilayers o fGa2O3, with good morphology and structural properties, were obtained, for the first time with this technique,on sapphire at the temperature of 650 °C. XRD analysis performed by high-resolution diffractometry confirmed the good crystallographic quality of the grown layers. At temperatures higher than 700 °C the usua lstable β-Ga2O3 phase was obtained. The ε-films were successfull ydeposited also on(0001)-oriented GaN and (111)-and (001)- oriented 3C–SiC templates, provided that the appropriate temperature was chosen.This indicates that the temperature, rather than substrate structure, is the growth parameter which decides what phase actually forms.The growth proceeds via coalescence of hexagonal islands and is favored when a sub- strate with an in-plane hexagonal arrangement of the atoms is employed. By applying Atomic Layer Deposition (ALD),epitaxial growth of the ε-phase was achieved at lower temperature,while the overall uniformity resulted improved even on large sapphire substrates.

Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD / Boschi, Francesco; Bosi, Matteo; Berzina, Tatiana; Buffagni, Elisa; Ferrari, Claudio; Fornari, Roberto. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - 443:(2016), pp. 25-30. [10.1016/j.jcrysgro.2016.03.013]

Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD

BOSCHI, Francesco;BOSI, Matteo;BERZINA, TATIANA;BUFFAGNI, Elisa;FERRARI, CLAUDIO;FORNARI, Roberto
2016

Abstract

Growth of gallium oxide thin films was carried out by Metalorganic Chemical Vapor Deposition (MOCVD) at different temperatures.Pure ε-phase epilayers o fGa2O3, with good morphology and structural properties, were obtained, for the first time with this technique,on sapphire at the temperature of 650 °C. XRD analysis performed by high-resolution diffractometry confirmed the good crystallographic quality of the grown layers. At temperatures higher than 700 °C the usua lstable β-Ga2O3 phase was obtained. The ε-films were successfull ydeposited also on(0001)-oriented GaN and (111)-and (001)- oriented 3C–SiC templates, provided that the appropriate temperature was chosen.This indicates that the temperature, rather than substrate structure, is the growth parameter which decides what phase actually forms.The growth proceeds via coalescence of hexagonal islands and is favored when a sub- strate with an in-plane hexagonal arrangement of the atoms is employed. By applying Atomic Layer Deposition (ALD),epitaxial growth of the ε-phase was achieved at lower temperature,while the overall uniformity resulted improved even on large sapphire substrates.
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD / Boschi, Francesco; Bosi, Matteo; Berzina, Tatiana; Buffagni, Elisa; Ferrari, Claudio; Fornari, Roberto. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - 443:(2016), pp. 25-30. [10.1016/j.jcrysgro.2016.03.013]
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2806311
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 127
  • ???jsp.display-item.citation.isi??? 126
social impact