3C-SiC epitaxial layers were grown on on-axis Si (001) substrates by low-pressure hot-wall chemical vapour deposition. Depending on the growth parameters, the residual strain in the 3C-SiC layer was seen to be tensile or compressive. In this work, the influence of parameters, such as growth temperature and C/Si ratio in the vapour phase, on residual strain and macroscopic layer bow is investigated. We found that the wafer bow changes from convex, at a deposition temperature of 1270 degrees C, to concave at 1370 degrees C. High resolution x-ray diffraction data indicate that the crystalline perfection of the layers is lower for decreasing deposition temperature and increasing compressive strain. No remarkable influence of the C/Si ratio in the gaseous atmosphere on the FWHM of the rocking curve was observed.

Influence of growth parameters on the residual strain in 3C-SiC epitaxial layers on (001) silicon / G. Wagner;J. Schwarzkopf;M. Schmidbauer;R. Fornari. - 600-603:(2009), pp. 223-226.

Influence of growth parameters on the residual strain in 3C-SiC epitaxial layers on (001) silicon

FORNARI, Roberto
2009

Abstract

3C-SiC epitaxial layers were grown on on-axis Si (001) substrates by low-pressure hot-wall chemical vapour deposition. Depending on the growth parameters, the residual strain in the 3C-SiC layer was seen to be tensile or compressive. In this work, the influence of parameters, such as growth temperature and C/Si ratio in the vapour phase, on residual strain and macroscopic layer bow is investigated. We found that the wafer bow changes from convex, at a deposition temperature of 1270 degrees C, to concave at 1370 degrees C. High resolution x-ray diffraction data indicate that the crystalline perfection of the layers is lower for decreasing deposition temperature and increasing compressive strain. No remarkable influence of the C/Si ratio in the gaseous atmosphere on the FWHM of the rocking curve was observed.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/2683986
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