X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects

Dubecky, F.; Darmo, J.; Zat'Ko, B.; Fornari, R.; Necas, V.; Krempasky, M.; Pelfer, P. G.; Sekacova, M.; Bohacek, P.

doi:10.1109/SIM.2000.939217

In this work, the different aspects of X-ray digital radiology are considered and the requirements of the materials for radiation detector applications are identified. The status of development of X- and gamma/-ray detectors based on semi-insulating (SI) GaAs and InP is reviewed. Emphasis is put on the (i) basic material characteristics, (ii) role of the electrodes in the overall detector performances. Detectors recently developed at IEE SAS are illustrated along with the first digital images taken with the detectors. Some conclusions about the relationship between material quality and applications are provided.

Titolo:	X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP: Present status and prospects
Autori:	Dubecky F. Darmo J. Zat'Ko B. FORNARI, Roberto Necas V. Krempasky M. Pelfer P. G. Sekacova M. Bohacek P. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2000
Handle:	http://hdl.handle.net/11381/2886891
ISBN:	0-7803-5814-7
Appare nelle tipologie:	4.1b Atto convegno Volume

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