IRIS
GHEZZI, Carlo
 Distribuzione geografica
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Continente #
NA - Nord America 3.752
AS - Asia 2.944
EU - Europa 2.466
SA - Sud America 669
AF - Africa 167
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 3
AN - Antartide 1
Totale 10.006
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Nazione #
US - Stati Uniti d'America 3.610
SG - Singapore 1.284
CN - Cina 896
BR - Brasile 538
UA - Ucraina 511
FI - Finlandia 463
IE - Irlanda 442
SE - Svezia 338
DE - Germania 318
VN - Vietnam 266
HK - Hong Kong 262
NL - Olanda 130
ZA - Sudafrica 129
CA - Canada 107
TR - Turchia 84
AR - Argentina 63
GB - Regno Unito 57
RU - Federazione Russa 46
IT - Italia 43
FR - Francia 37
IN - India 34
IQ - Iraq 23
MX - Messico 21
EC - Ecuador 20
BD - Bangladesh 18
RO - Romania 17
ID - Indonesia 16
BE - Belgio 15
CO - Colombia 13
VE - Venezuela 12
PL - Polonia 11
PK - Pakistan 9
CI - Costa d'Avorio 8
JP - Giappone 8
MA - Marocco 8
PY - Paraguay 8
AT - Austria 7
CL - Cile 7
CZ - Repubblica Ceca 7
KE - Kenya 6
EG - Egitto 5
ES - Italia 5
DO - Repubblica Dominicana 4
EU - Europa 4
LT - Lituania 4
PE - Perù 4
PS - Palestinian Territory 4
SA - Arabia Saudita 4
UY - Uruguay 4
UZ - Uzbekistan 4
AE - Emirati Arabi Uniti 3
AZ - Azerbaigian 3
BH - Bahrain 3
HU - Ungheria 3
KW - Kuwait 3
KZ - Kazakistan 3
AL - Albania 2
AU - Australia 2
CR - Costa Rica 2
ET - Etiopia 2
GA - Gabon 2
GT - Guatemala 2
IL - Israele 2
JO - Giordania 2
KR - Corea 2
LV - Lettonia 2
MK - Macedonia 2
MY - Malesia 2
NP - Nepal 2
PA - Panama 2
SN - Senegal 2
TN - Tunisia 2
AF - Afghanistan, Repubblica islamica di 1
AQ - Antartide 1
BA - Bosnia-Erzegovina 1
BN - Brunei Darussalam 1
BW - Botswana 1
CH - Svizzera 1
CM - Camerun 1
EE - Estonia 1
GE - Georgia 1
HN - Honduras 1
HR - Croazia 1
JM - Giamaica 1
ML - Mali 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
OM - Oman 1
PH - Filippine 1
PT - Portogallo 1
SK - Slovacchia (Repubblica Slovacca) 1
SY - Repubblica araba siriana 1
TC - Turks e Caicos 1
TM - Turkmenistan 1
Totale 10.006
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Città #
Singapore 601
Jacksonville 525
Chandler 452
Dublin 442
Santa Clara 432
Ashburn 302
Hong Kong 262
Beijing 222
Dearborn 215
Boardman 166
San Mateo 126
Johannesburg 119
Nanjing 115
Princeton 112
Helsinki 111
Ho Chi Minh City 99
Dallas 91
Toronto 87
Wilmington 79
Ann Arbor 73
Hanoi 57
Shanghai 53
Shenyang 47
New York 45
São Paulo 43
Los Angeles 42
Izmir 39
Munich 39
Nanchang 38
Hebei 37
Houston 36
Tianjin 36
Kocaeli 35
Jinan 29
Kunming 29
Jiaxing 28
Bremen 23
Falkenstein 23
Hefei 23
Buffalo 22
Changsha 21
Des Moines 21
Seattle 19
Marseille 18
Turku 18
Strasbourg 16
Brussels 15
Guangzhou 15
Norwalk 15
Moscow 14
Haiphong 13
Rio de Janeiro 13
Biên Hòa 12
Hangzhou 12
Mestre 12
Woodbridge 12
Baghdad 11
Chennai 11
Columbus 11
Brasília 10
Da Nang 9
London 9
Shaoxing 9
Stockholm 9
Abidjan 8
Augusta 8
Belo Horizonte 8
Warsaw 8
Atlanta 7
Boston 7
Brooklyn 7
Campinas 7
Chicago 7
Curitiba 7
Fremont 7
Orem 7
Porto Alegre 7
Tokyo 7
Vienna 7
Düsseldorf 6
Jakarta 6
Montreal 6
Mumbai 6
Nairobi 6
Parma 6
Quito 6
Salvador 6
Sorocaba 6
St Petersburg 6
Thái Bình 6
Timisoara 6
Zhengzhou 6
Belém 5
Borås 5
Bắc Ninh 5
Can Tho 5
Feira de Santana 5
Frankfurt am Main 5
Haikou 5
Horia 5
Totale 5.907
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Nome #
Reduction of spatial correlations amongst DX charges owing to capture of photoexcited electrons into a localized donor state in Al0.35Ga0.65As 177
Coexistence of th DX center and other Si-related electron bound states in AlGaAs 152
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 146
Analysis of persistent photoconductivity in sulphur doped GaSb 143
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 142
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 139
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs 136
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures 136
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility 133
Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit 132
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb 127
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 122
Electrical characterization of a buried GaSb p-n junction controlled by native defects 122
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 121
Admittance spectroscopy of GaAs/InGaP MQW structures 114
A shallow state coexisting with the DX center in Te-doped AlGaSb 113
Metal-insulator transition induced by the magnetic field in n-type GaSb, 112
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 112
Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As 110
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 108
A study of microdefects in n-type doped GaAs crystals using cathodoluminescence and X-ray techniques 105
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb 105
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 103
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 103
Electrical characterization of sels-assembled InAs/GaAs quantom dots by capacitance techniques 102
Positron annihilation in semiconductors 100
Concentration dependence of optical absorption in Tellurium doped GaSb 99
Anharmonic contributions to the Debye-Waller factor for Zn 99
A simple X-ray fluorescence method for determining the composition of PbSnTe psoudobinary alloys 98
Admittance of semiconductor junctions with gap states having a continuous distribution in energy 97
Anharmonic contributions to elastic and inelastic scattering of X-rays at Bragg reflections in Aluminum 97
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 96
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 95
Effect of temperature on the anomalous transmission of X-rays in germanium 95
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 95
Hall and photo-Hall effect measurements on sulphur-doped GaSb 94
X-ray diffuse scattering by compositions waves in GaAlAs 94
Anharmonic contributions to elastic and inelastic scattering of X-rays at Bragg reflections in Aluminum 94
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 93
Hall measurements under weak persistent photoexcitation in Si-doped AlxGa1-xAs 93
Surface effects on positron annihilation in elementary semiconductors 91
Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells 91
Positron lifetimes in metal hydrides 91
Determination of the inelastic scattering at Bragg reflections of KCl by means of the Mossbauer effect:contribution of multiphonon scatterig terms 90
Positron lifetimes in zinc-blend lattice structures 89
Semiconductor-to-metal transition and positron annihilation in V2O3 89
Optical absorption near the fundamental absorption edge in GaSb 88
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 88
ac admittance of CdZnS/p-GaAs hetorojunctions 87
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 86
X-ray determination of the mean-square vibrational amplitudes of atoms in nearly perfect CdS crystals 86
Effects of annealing on electron trap and free carrier concentration in n-type GaAs 86
Low temperature mobility of photoexcited electrons in AlxGa1-xAs containing DX centers 85
Temperature dependence of optical absorption induced by exciton resonances in GaAs/AlGaAs muliple quantum wells 85
Determination of the thermal diffuse scattering at the Bragg reflections of Si and Al by means of the Mossbauer effect 85
Some properties of CdS/p-Ge heterojunctions grown by chemical transport 85
Crystal defects in CdZnS/GaAs heterostrucures prepared by vapour phase chemical transport 85
Electrical characterization of sels-assembled InAs/GaAs quantom dots by capacitance techniques 85
Application of the Mossbauer effect to the study of elastic and inelastic scattering of gamma rays in amorphous SiO2 85
Electron scattering by spatially correlated DX charges 85
Electrical investigation of carbon self-doped GaAs layers grown by MOVPE from TMGa and TBAs 84
The inluence of the DX center on the capacitance of Schottky barriers in n-type AlGaAs 84
Electrical characterization of In/As quantum dot structures 83
X-ray topography of CdTe crystals 83
Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells 83
Positron annihilation in lithium hydride 83
Scattering experiments using the Mossbauer effect 82
Inluence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb 82
In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells 82
Surface effects on positron annihilation in silicon powders 80
Preparation by MBE and study of GaSb-based structures 79
X-ray study of heterogeneous nuclation of dislocations in P-diffused silicon 79
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 78
Investigation of the charge state of the DX centre through analysis of electron mobility data in AlGaAs 78
Determination of the inelastic scattering at Bragg reflections of KCl by means of the Mossbauer effect:contribution of multiphonon scatterig terms 78
Negative magnetoresistance effects in metallic n-type GaSb 77
Spatial correlations of DX charges and electron mobility in AlGaAs 76
The influence of the DX centre on C-V and I-V characteristics of Schottky barriers in n-type AlGaAs 75
Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels 75
Determination of the thermal diffuse scattering at the Bragg reflections of Si and Al by means of the Mossbauer effect 75
Determination of the thermal diffuse scattering in a silicon crystal by means of the Mossbauer effect 75
Electrical and photovoltaic properties of CdZnS/p-GaAs heterojunctions 74
Elecron traps and positive DLTS signals in VPE GaAs MESFETs 73
Diffuse X-ray scattering and the structure of oxide layers on real GaAs (111) surfaces 73
X-ray study of PbSnTe 73
Occupancy level of the DX center in Te-doped AlxGa1-xSb 73
Electrical characterization of GaSb buried p-n junctions 73
Hole injection in AlGaAs Schottky barriers:influence on the DX center occupation 73
Minority carrier capture at DX centers in AlGaSb Schottky diodes 72
Effect of temperature on the anomalous transmission of X-rays in copper and zinc 72
The role of phonon eigenvectors on the X-ray thermal diffuse scattering in GaAs 72
Electron scattering by spatially correlated DX charges 71
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 71
Nonlinear electric field effects in the magnetoresistance of n-type GaSb 71
Inclusion-like defects in Czochralski grown InP single crystals 70
Mean square vibrational amplitudes in PbTe 69
X-ray investigation of crystal defects in Czochralski grown InP single crystals 68
Hole capture by the DX center in AlGaAs Schottky barriers 67
Investigation of the structure of oxide layers on real GaAs surfaces using X-ray diffuse scattering 66
DX-center-related features by capacitance measurements in AlGaAs 66
Totale 9.314
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Categoria #
all - tutte 35.579
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 35.579
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021495 0 0 0 0 0 6 109 4 169 54 150 3
2021/2022557 8 6 4 15 25 4 93 123 21 50 58 150
2022/20231.565 209 151 87 106 136 176 15 97 538 3 34 13
2023/2024458 32 54 25 11 32 132 29 14 9 15 35 70
2024/20252.078 16 126 145 76 236 428 4 42 237 192 142 434
2025/20262.521 333 398 516 539 648 87 0 0 0 0 0 0
Totale 10.081