IRIS
GHEZZI, Carlo
 Distribuzione geografica
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Continente #
NA - Nord America 3.121
EU - Europa 2.151
AS - Asia 1.147
AF - Africa 8
Continente sconosciuto - Info sul continente non disponibili 4
SA - Sud America 2
OC - Oceania 1
Totale 6.434
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Nazione #
US - Stati Uniti d'America 3.024
CN - Cina 672
UA - Ucraina 503
FI - Finlandia 445
IE - Irlanda 441
SG - Singapore 395
SE - Svezia 328
DE - Germania 275
CA - Canada 93
TR - Turchia 73
FR - Francia 36
IT - Italia 28
GB - Regno Unito 27
BE - Belgio 15
RO - Romania 15
NL - Olanda 12
RU - Federazione Russa 8
AT - Austria 7
CI - Costa d'Avorio 7
CZ - Repubblica Ceca 5
EU - Europa 4
IN - India 4
MX - Messico 4
CO - Colombia 2
HU - Ungheria 2
AF - Afghanistan, Repubblica islamica di 1
CM - Camerun 1
EE - Estonia 1
JP - Giappone 1
LT - Lituania 1
NZ - Nuova Zelanda 1
PL - Polonia 1
SK - Slovacchia (Repubblica Slovacca) 1
TM - Turkmenistan 1
Totale 6.434
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Città #
Jacksonville 523
Chandler 452
Dublin 441
Santa Clara 419
Singapore 332
Dearborn 215
Boardman 146
Beijing 145
Ashburn 131
San Mateo 126
Nanjing 115
Princeton 112
Helsinki 111
Toronto 85
Wilmington 79
Ann Arbor 73
Shanghai 50
Shenyang 47
Izmir 38
Nanchang 38
Hebei 37
Kocaeli 35
Houston 33
Kunming 29
Tianjin 29
Jiaxing 28
Jinan 28
New York 24
Bremen 23
Falkenstein 23
Des Moines 21
Hefei 21
Changsha 19
Marseille 18
Seattle 17
Strasbourg 16
Brussels 15
Norwalk 15
Mestre 12
Woodbridge 12
Hangzhou 11
Guangzhou 9
Shaoxing 9
Abidjan 7
Augusta 7
Fremont 7
Vienna 7
Dallas 6
Düsseldorf 6
Parma 6
Timisoara 6
Borås 5
Haikou 5
Horia 5
Los Angeles 5
Cambridge 4
Ensenada 4
Focsani 4
Frankfurt am Main 4
Fuzhou 4
Taizhou 4
Zhengzhou 4
Brno 3
Chengdu 3
Escanaba 3
Ferrara 3
Lanzhou 3
Ningbo 3
Ottawa 3
Rockville 3
Auburn Hills 2
Brooklyn 2
Budapest 2
Philadelphia 2
Prague 2
Quzhou 2
Simi Valley 2
Taiyuan 2
Ufa 2
Wenzhou 2
Andover 1
Ashgabat 1
Auckland 1
Bratislava 1
Brescia 1
Changchun 1
Chaoyang 1
Chicago 1
Dalian 1
Edinburgh 1
Fushan 1
Gatchina 1
Geislingen an der Steige 1
Grafing 1
Guangdong 1
Higashiasahimachi 1
Kabul 1
Leawood 1
London 1
Milan 1
Totale 4.326
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Nome #
Reduction of spatial correlations amongst DX charges owing to capture of photoexcited electrons into a localized donor state in Al0.35Ga0.65As 138
Coexistence of th DX center and other Si-related electron bound states in AlGaAs 101
Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit 97
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 93
Metal-insulator transition induced by the magnetic field in n-type GaSb, 88
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility 88
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs 86
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 81
Analysis of persistent photoconductivity in sulphur doped GaSb 79
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 79
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 78
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 77
Admittance spectroscopy of GaAs/InGaP MQW structures 75
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 75
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures 75
Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As 74
Electrical characterization of sels-assembled InAs/GaAs quantom dots by capacitance techniques 73
Effect of temperature on the anomalous transmission of X-rays in germanium 73
Hall measurements under weak persistent photoexcitation in Si-doped AlxGa1-xAs 73
A study of microdefects in n-type doped GaAs crystals using cathodoluminescence and X-ray techniques 72
Positron annihilation in semiconductors 70
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 70
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 70
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb 69
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 68
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 68
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 68
Positron lifetimes in metal hydrides 68
Electrical characterization of a buried GaSb p-n junction controlled by native defects 68
Semiconductor-to-metal transition and positron annihilation in V2O3 66
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 66
Low temperature mobility of photoexcited electrons in AlxGa1-xAs containing DX centers 65
Hall and photo-Hall effect measurements on sulphur-doped GaSb 65
Anharmonic contributions to the Debye-Waller factor for Zn 65
A simple X-ray fluorescence method for determining the composition of PbSnTe psoudobinary alloys 64
X-ray study of heterogeneous nuclation of dislocations in P-diffused silicon 64
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 64
Electrical investigation of carbon self-doped GaAs layers grown by MOVPE from TMGa and TBAs 63
Some properties of CdS/p-Ge heterojunctions grown by chemical transport 63
A shallow state coexisting with the DX center in Te-doped AlGaSb 63
X-ray topography of CdTe crystals 60
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb 60
Electrical characterization of In/As quantum dot structures 59
Investigation of the charge state of the DX centre through analysis of electron mobility data in AlGaAs 59
The inluence of the DX center on the capacitance of Schottky barriers in n-type AlGaAs 59
Determination of the inelastic scattering at Bragg reflections of KCl by means of the Mossbauer effect:contribution of multiphonon scatterig terms 59
Determination of the thermal diffuse scattering in a silicon crystal by means of the Mossbauer effect 59
Concentration dependence of optical absorption in Tellurium doped GaSb 59
Anharmonic contributions to elastic and inelastic scattering of X-rays at Bragg reflections in Aluminum 59
Minority carrier capture at DX centers in AlGaSb Schottky diodes 58
Scattering experiments using the Mossbauer effect 58
Surface effects on positron annihilation in silicon powders 58
Admittance of semiconductor junctions with gap states having a continuous distribution in energy 58
Electron scattering by spatially correlated DX charges 58
Anharmonic contributions to elastic and inelastic scattering of X-rays at Bragg reflections in Aluminum 58
Effects of annealing on electron trap and free carrier concentration in n-type GaAs 58
Preparation by MBE and study of GaSb-based structures 57
ac admittance of CdZnS/p-GaAs hetorojunctions 57
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 57
Spatial correlations of DX charges and electron mobility in AlGaAs 56
X-ray diffuse scattering by compositions waves in GaAlAs 56
Inluence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb 56
Application of the Mossbauer effect to the study of elastic and inelastic scattering of gamma rays in amorphous SiO2 56
Determination of the inelastic scattering at Bragg reflections of KCl by means of the Mossbauer effect:contribution of multiphonon scatterig terms 56
Optical absorption near the fundamental absorption edge in GaSb 56
Electrical and photovoltaic properties of CdZnS/p-GaAs heterojunctions 54
Inclusion-like defects in Czochralski grown InP single crystals 53
Surface effects on positron annihilation in elementary semiconductors 53
X-ray determination of the mean-square vibrational amplitudes of atoms in nearly perfect CdS crystals 53
Nonlinear electric field effects in the magnetoresistance of n-type GaSb 53
Positron annihilation in lithium hydride 52
Positron lifetimes in zinc-blend lattice structures 52
Occupancy level of the DX center in Te-doped AlxGa1-xSb 51
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 51
The role of phonon eigenvectors on the X-ray thermal diffuse scattering in GaAs 51
The influence of the DX centre on C-V and I-V characteristics of Schottky barriers in n-type AlGaAs 50
Determination of the thermal diffuse scattering at the Bragg reflections of Si and Al by means of the Mossbauer effect 50
Crystal defects in CdZnS/GaAs heterostrucures prepared by vapour phase chemical transport 50
Mean square vibrational amplitudes in PbTe 50
Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells 49
Determination of the thermal diffuse scattering at the Bragg reflections of Si and Al by means of the Mossbauer effect 49
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 48
In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells 48
Elecron traps and positive DLTS signals in VPE GaAs MESFETs 47
Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells 47
Temperature dependence of optical absorption induced by exciton resonances in GaAs/AlGaAs muliple quantum wells 45
Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels 45
Diffuse X-ray scattering and the structure of oxide layers on real GaAs (111) surfaces 45
Hole injection in AlGaAs Schottky barriers:influence on the DX center occupation 45
Growth and defect structure of CdS epitaxial layers on (111) Ge substrates 44
Electrical characterization of GaSb buried p-n junctions 44
Negative magnetoresistance effects in metallic n-type GaSb 44
DX-center-related features by capacitance measurements in AlGaAs 44
X-ray investigation of crystal defects in Czochralski grown InP single crystals 43
Effect of temperature on the anomalous transmission of X-rays in copper and zinc 43
Electrical characterization of sels-assembled InAs/GaAs quantom dots by capacitance techniques 43
Oxidation stacking faults in epitaxial silicon crystals 42
Electron scattering by spatially correlated DX charges 41
X-ray study of PbSnTe 41
Hole capture by the DX center in AlGaAs Schottky barriers 40
Totale 6.108
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Categoria #
all - tutte 23.820
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 23.820
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020709 0 0 0 0 0 153 183 20 145 73 25 110
2020/2021825 3 110 104 4 109 6 109 4 169 54 150 3
2021/2022557 8 6 4 15 25 4 93 123 21 50 58 150
2022/20231.565 209 151 87 106 136 176 15 97 538 3 34 13
2023/2024458 32 54 25 11 32 132 29 14 9 15 35 70
2024/20251.027 16 126 145 76 236 428 0 0 0 0 0 0
Totale 6.509