IRIS
GHEZZI, Carlo
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 4.470
AS - Asia 3.708
EU - Europa 2.600
SA - Sud America 717
AF - Africa 203
Continente sconosciuto - Info sul continente non disponibili 79
OC - Oceania 3
AN - Antartide 1
Totale 11.781
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 4.299
SG - Singapore 1.438
CN - Cina 1.019
VN - Vietnam 607
BR - Brasile 568
UA - Ucraina 513
FI - Finlandia 463
IE - Irlanda 442
SE - Svezia 339
DE - Germania 325
HK - Hong Kong 298
ZA - Sudafrica 146
FR - Francia 132
NL - Olanda 130
CA - Canada 119
TR - Turchia 94
AR - Argentina 69
GB - Regno Unito 67
IT - Italia 57
IN - India 53
RU - Federazione Russa 46
BD - Bangladesh 33
IQ - Iraq 31
MX - Messico 25
PK - Pakistan 22
EC - Ecuador 20
RO - Romania 17
CO - Colombia 16
ID - Indonesia 16
BE - Belgio 15
VE - Venezuela 15
JP - Giappone 13
MA - Marocco 12
PH - Filippine 11
PL - Polonia 11
ES - Italia 10
CI - Costa d'Avorio 9
CL - Cile 9
KE - Kenya 9
PY - Paraguay 9
AT - Austria 7
CZ - Repubblica Ceca 7
TH - Thailandia 7
UZ - Uzbekistan 7
EG - Egitto 6
PS - Palestinian Territory 6
SA - Arabia Saudita 6
UY - Uruguay 6
CR - Costa Rica 5
MY - Malesia 5
TN - Tunisia 5
DO - Repubblica Dominicana 4
EU - Europa 4
JM - Giamaica 4
LT - Lituania 4
PE - Perù 4
AE - Emirati Arabi Uniti 3
AZ - Azerbaigian 3
BH - Bahrain 3
ET - Etiopia 3
GA - Gabon 3
HU - Ungheria 3
IL - Israele 3
KR - Corea 3
KW - Kuwait 3
KZ - Kazakistan 3
NI - Nicaragua 3
NP - Nepal 3
SY - Repubblica araba siriana 3
TW - Taiwan 3
AL - Albania 2
AU - Australia 2
GT - Guatemala 2
HN - Honduras 2
JO - Giordania 2
LB - Libano 2
LV - Lettonia 2
MK - Macedonia 2
OM - Oman 2
PA - Panama 2
SN - Senegal 2
TT - Trinidad e Tobago 2
AF - Afghanistan, Repubblica islamica di 1
AQ - Antartide 1
BA - Bosnia-Erzegovina 1
BN - Brunei Darussalam 1
BW - Botswana 1
CH - Svizzera 1
CM - Camerun 1
DZ - Algeria 1
EE - Estonia 1
GE - Georgia 1
GY - Guiana 1
HR - Croazia 1
KG - Kirghizistan 1
ML - Mali 1
MQ - Martinica 1
MU - Mauritius 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
Totale 11.698
Salva come PNG Salva come JPEG
Città #
Singapore 655
Jacksonville 525
Chandler 452
Dublin 442
Santa Clara 442
Ashburn 360
San Jose 339
Hong Kong 285
Beijing 233
Dearborn 215
Ho Chi Minh City 189
Boardman 166
Hanoi 136
Johannesburg 136
San Mateo 126
Nanjing 115
Princeton 112
Helsinki 111
Dallas 96
Lauterbourg 92
Toronto 89
Council Bluffs 85
Wilmington 79
Ann Arbor 73
Los Angeles 60
New York 57
Shanghai 55
Shenyang 47
São Paulo 43
Izmir 39
Munich 39
Nanchang 38
Hebei 37
Houston 37
Tianjin 36
Kocaeli 35
Kunming 30
Jinan 29
Jiaxing 28
Buffalo 27
Da Nang 26
Haiphong 25
Bremen 23
Falkenstein 23
Hefei 23
Changsha 21
Des Moines 21
Seattle 20
Marseille 18
Turku 18
Guangzhou 17
Strasbourg 16
Biên Hòa 15
Brussels 15
Norwalk 15
Baghdad 14
Chennai 14
Moscow 14
Rio de Janeiro 14
Belo Horizonte 12
Can Tho 12
Hangzhou 12
Mestre 12
Orem 12
Woodbridge 12
Columbus 11
Brasília 10
Frankfurt am Main 10
Abidjan 9
Bắc Ninh 9
Hải Dương 9
London 9
Nairobi 9
Shaoxing 9
Stockholm 9
Atlanta 8
Augusta 8
Boston 8
Chicago 8
Phủ Lý 8
Porto Alegre 8
Tokyo 8
Warsaw 8
Brooklyn 7
Campinas 7
Curitiba 7
Fremont 7
Kensington 7
Milan 7
Montreal 7
Tashkent 7
Thái Nguyên 7
Vienna 7
Casablanca 6
Cleveland 6
Düsseldorf 6
Jakarta 6
Mumbai 6
Parma 6
Quito 6
Totale 6.884
Salva come PNG Salva come JPEG
Nome #
Reduction of spatial correlations amongst DX charges owing to capture of photoexcited electrons into a localized donor state in Al0.35Ga0.65As 197
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 191
Coexistence of th DX center and other Si-related electron bound states in AlGaAs 180
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 172
Analysis of persistent photoconductivity in sulphur doped GaSb 163
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 162
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility 158
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures 156
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs 155
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 149
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 148
Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit 146
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb 144
Electrical characterization of a buried GaSb p-n junction controlled by native defects 139
Admittance spectroscopy of GaAs/InGaP MQW structures 138
A shallow state coexisting with the DX center in Te-doped AlGaSb 138
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 131
Metal-insulator transition induced by the magnetic field in n-type GaSb, 127
Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As 127
A study of microdefects in n-type doped GaAs crystals using cathodoluminescence and X-ray techniques 126
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 124
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 123
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb 120
Concentration dependence of optical absorption in Tellurium doped GaSb 119
A simple X-ray fluorescence method for determining the composition of PbSnTe psoudobinary alloys 118
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 117
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 116
Anharmonic contributions to the Debye-Waller factor for Zn 116
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 115
Positron annihilation in semiconductors 114
Admittance of semiconductor junctions with gap states having a continuous distribution in energy 113
Anharmonic contributions to elastic and inelastic scattering of X-rays at Bragg reflections in Aluminum 113
Hall and photo-Hall effect measurements on sulphur-doped GaSb 112
Electrical characterization of sels-assembled InAs/GaAs quantom dots by capacitance techniques 111
Hall measurements under weak persistent photoexcitation in Si-doped AlxGa1-xAs 111
Anharmonic contributions to elastic and inelastic scattering of X-rays at Bragg reflections in Aluminum 111
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 110
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 109
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 108
X-ray diffuse scattering by compositions waves in GaAlAs 106
ac admittance of CdZnS/p-GaAs hetorojunctions 106
Effect of temperature on the anomalous transmission of X-rays in germanium 105
Determination of the thermal diffuse scattering at the Bragg reflections of Si and Al by means of the Mossbauer effect 104
Surface effects on positron annihilation in elementary semiconductors 104
Some properties of CdS/p-Ge heterojunctions grown by chemical transport 103
Semiconductor-to-metal transition and positron annihilation in V2O3 103
Preparation by MBE and study of GaSb-based structures 102
Positron lifetimes in metal hydrides 101
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 101
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 100
Determination of the inelastic scattering at Bragg reflections of KCl by means of the Mossbauer effect:contribution of multiphonon scatterig terms 100
X-ray determination of the mean-square vibrational amplitudes of atoms in nearly perfect CdS crystals 100
Positron lifetimes in zinc-blend lattice structures 100
Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells 100
Temperature dependence of optical absorption induced by exciton resonances in GaAs/AlGaAs muliple quantum wells 99
Effects of annealing on electron trap and free carrier concentration in n-type GaAs 99
Low temperature mobility of photoexcited electrons in AlxGa1-xAs containing DX centers 98
Electrical characterization of sels-assembled InAs/GaAs quantom dots by capacitance techniques 98
Application of the Mossbauer effect to the study of elastic and inelastic scattering of gamma rays in amorphous SiO2 98
The inluence of the DX center on the capacitance of Schottky barriers in n-type AlGaAs 97
Electron scattering by spatially correlated DX charges 97
Crystal defects in CdZnS/GaAs heterostrucures prepared by vapour phase chemical transport 96
Optical absorption near the fundamental absorption edge in GaSb 95
Electrical investigation of carbon self-doped GaAs layers grown by MOVPE from TMGa and TBAs 94
Surface effects on positron annihilation in silicon powders 94
Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells 94
Positron annihilation in lithium hydride 94
Investigation of the charge state of the DX centre through analysis of electron mobility data in AlGaAs 93
Determination of the inelastic scattering at Bragg reflections of KCl by means of the Mossbauer effect:contribution of multiphonon scatterig terms 93
In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells 93
Elecron traps and positive DLTS signals in VPE GaAs MESFETs 92
X-ray study of heterogeneous nuclation of dislocations in P-diffused silicon 92
Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels 92
X-ray topography of CdTe crystals 92
X-ray study of PbSnTe 92
Electrical characterization of In/As quantum dot structures 90
Scattering experiments using the Mossbauer effect 90
Inluence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb 90
Determination of the thermal diffuse scattering at the Bragg reflections of Si and Al by means of the Mossbauer effect 90
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 89
Negative magnetoresistance effects in metallic n-type GaSb 89
Minority carrier capture at DX centers in AlGaSb Schottky diodes 88
Diffuse X-ray scattering and the structure of oxide layers on real GaAs (111) surfaces 88
Determination of the thermal diffuse scattering in a silicon crystal by means of the Mossbauer effect 88
Electrical and photovoltaic properties of CdZnS/p-GaAs heterojunctions 87
Spatial correlations of DX charges and electron mobility in AlGaAs 86
Mean square vibrational amplitudes in PbTe 86
Electron scattering by spatially correlated DX charges 85
X-ray investigation of crystal defects in Czochralski grown InP single crystals 85
Occupancy level of the DX center in Te-doped AlxGa1-xSb 85
Hole injection in AlGaAs Schottky barriers:influence on the DX center occupation 84
Inclusion-like defects in Czochralski grown InP single crystals 83
The role of phonon eigenvectors on the X-ray thermal diffuse scattering in GaAs 83
The influence of the DX centre on C-V and I-V characteristics of Schottky barriers in n-type AlGaAs 82
Hole capture by the DX center in AlGaAs Schottky barriers 81
Electrical characterization of GaSb buried p-n junctions 80
Nonlinear electric field effects in the magnetoresistance of n-type GaSb 80
Effect of temperature on the anomalous transmission of X-rays in copper and zinc 79
Short-range order and diffuse X-ray scattering in single crystal PbSnTe alloys 79
Growth and defect structure of CdS epitaxial layers on (111) Ge substrates 76
Totale 10.877
Salva come PNG Salva come JPEG
Categoria #
all - tutte 42.444
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 42.444
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022549 0 6 4 15 25 4 93 123 21 50 58 150
2022/20231.565 209 151 87 106 136 176 15 97 538 3 34 13
2023/2024458 32 54 25 11 32 132 29 14 9 15 35 70
2024/20252.078 16 126 145 76 236 428 4 42 237 192 142 434
2025/20264.040 333 398 516 539 648 200 469 170 440 255 46 26
2026/2027181 101 80 0 0 0 0 0 0 0 0 0 0
Totale 11.781