IRIS
GHEZZI, Carlo
 Distribuzione geografica
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Continente #
NA - Nord America 2.532
EU - Europa 2.013
AS - Asia 749
Continente sconosciuto - Info sul continente non disponibili 4
SA - Sud America 2
AF - Africa 1
OC - Oceania 1
Totale 5.302
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Nazione #
US - Stati Uniti d'America 2.444
CN - Cina 660
UA - Ucraina 503
IE - Irlanda 441
FI - Finlandia 367
SE - Svezia 328
DE - Germania 250
CA - Canada 88
TR - Turchia 73
IT - Italia 26
GB - Regno Unito 25
FR - Francia 18
RO - Romania 15
BE - Belgio 14
NL - Olanda 9
SG - Singapore 9
AT - Austria 7
EU - Europa 4
IN - India 4
RU - Federazione Russa 3
CO - Colombia 2
CZ - Repubblica Ceca 2
HU - Ungheria 2
AF - Afghanistan, Repubblica islamica di 1
CM - Camerun 1
EE - Estonia 1
JP - Giappone 1
NZ - Nuova Zelanda 1
PL - Polonia 1
SK - Slovacchia (Repubblica Slovacca) 1
TM - Turkmenistan 1
Totale 5.302
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Città #
Jacksonville 523
Chandler 452
Dublin 441
Dearborn 215
Beijing 145
Ashburn 130
San Mateo 126
Nanjing 115
Princeton 112
Toronto 83
Wilmington 79
Ann Arbor 73
Shenyang 47
Shanghai 40
Izmir 38
Nanchang 38
Hebei 37
Kocaeli 35
Boardman 33
Helsinki 33
Houston 33
Kunming 29
Tianjin 29
Jiaxing 28
Jinan 28
New York 24
Bremen 23
Des Moines 21
Hefei 21
Changsha 19
Seattle 17
Strasbourg 16
Norwalk 15
Brussels 14
Mestre 12
Woodbridge 12
Hangzhou 11
Guangzhou 9
Shaoxing 9
Augusta 7
Fremont 7
Vienna 7
Düsseldorf 6
Parma 6
Timisoara 6
Borås 5
Haikou 5
Horia 5
Los Angeles 5
Singapore 5
Cambridge 4
Focsani 4
Fuzhou 4
Taizhou 4
Zhengzhou 4
Chengdu 3
Escanaba 3
Ferrara 3
Lanzhou 3
Ningbo 3
Rockville 3
Auburn Hills 2
Brooklyn 2
Budapest 2
Frankfurt am Main 2
Philadelphia 2
Prague 2
Quzhou 2
Simi Valley 2
Taiyuan 2
Wenzhou 2
Andover 1
Ashgabat 1
Auckland 1
Bratislava 1
Changchun 1
Chaoyang 1
Chicago 1
Dalian 1
Dallas 1
Edinburgh 1
Fushan 1
Geislingen an der Steige 1
Grafing 1
Guangdong 1
Higashiasahimachi 1
Kabul 1
Leawood 1
Milan 1
Monmouth Junction 1
Montréal 1
Mountain View 1
Mumbai 1
Old Bridge 1
Phoenix 1
Pune 1
Ravenna 1
Redmond 1
Saint Petersburg 1
San Antonio 1
Totale 3.316
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Nome #
Reduction of spatial correlations amongst DX charges owing to capture of photoexcited electrons into a localized donor state in Al0.35Ga0.65As 126
Coexistence of th DX center and other Si-related electron bound states in AlGaAs 90
Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit 86
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 81
Metal-insulator transition induced by the magnetic field in n-type GaSb, 78
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility 74
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs 71
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 68
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 67
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 66
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 65
Analysis of persistent photoconductivity in sulphur doped GaSb 65
Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As 63
Admittance spectroscopy of GaAs/InGaP MQW structures 63
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 63
Electrical characterization of sels-assembled InAs/GaAs quantom dots by capacitance techniques 61
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures 61
Hall measurements under weak persistent photoexcitation in Si-doped AlxGa1-xAs 61
Effect of temperature on the anomalous transmission of X-rays in germanium 60
A study of microdefects in n-type doped GaAs crystals using cathodoluminescence and X-ray techniques 59
Positron annihilation in semiconductors 59
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb 59
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 59
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 59
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 58
Positron lifetimes in metal hydrides 58
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 57
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 57
Semiconductor-to-metal transition and positron annihilation in V2O3 56
Electrical investigation of carbon self-doped GaAs layers grown by MOVPE from TMGa and TBAs 55
Hall and photo-Hall effect measurements on sulphur-doped GaSb 55
Anharmonic contributions to the Debye-Waller factor for Zn 55
A simple X-ray fluorescence method for determining the composition of PbSnTe psoudobinary alloys 54
X-ray study of heterogeneous nuclation of dislocations in P-diffused silicon 54
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 53
Electrical characterization of a buried GaSb p-n junction controlled by native defects 53
Low temperature mobility of photoexcited electrons in AlxGa1-xAs containing DX centers 51
The inluence of the DX center on the capacitance of Schottky barriers in n-type AlGaAs 51
A shallow state coexisting with the DX center in Te-doped AlGaSb 51
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 51
Determination of the inelastic scattering at Bragg reflections of KCl by means of the Mossbauer effect:contribution of multiphonon scatterig terms 50
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb 50
X-ray topography of CdTe crystals 49
Determination of the thermal diffuse scattering in a silicon crystal by means of the Mossbauer effect 49
Concentration dependence of optical absorption in Tellurium doped GaSb 49
Investigation of the charge state of the DX centre through analysis of electron mobility data in AlGaAs 48
Scattering experiments using the Mossbauer effect 48
Surface effects on positron annihilation in silicon powders 48
Some properties of CdS/p-Ge heterojunctions grown by chemical transport 48
Anharmonic contributions to elastic and inelastic scattering of X-rays at Bragg reflections in Aluminum 48
Effects of annealing on electron trap and free carrier concentration in n-type GaAs 48
X-ray diffuse scattering by compositions waves in GaAlAs 47
Admittance of semiconductor junctions with gap states having a continuous distribution in energy 47
Electron scattering by spatially correlated DX charges 47
Preparation by MBE and study of GaSb-based structures 46
Electrical characterization of In/As quantum dot structures 46
ac admittance of CdZnS/p-GaAs hetorojunctions 46
Inluence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb 46
Determination of the inelastic scattering at Bragg reflections of KCl by means of the Mossbauer effect:contribution of multiphonon scatterig terms 46
Anharmonic contributions to elastic and inelastic scattering of X-rays at Bragg reflections in Aluminum 46
Optical absorption near the fundamental absorption edge in GaSb 46
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 46
Spatial correlations of DX charges and electron mobility in AlGaAs 45
Application of the Mossbauer effect to the study of elastic and inelastic scattering of gamma rays in amorphous SiO2 45
Positron annihilation in lithium hydride 45
Electrical and photovoltaic properties of CdZnS/p-GaAs heterojunctions 44
Nonlinear electric field effects in the magnetoresistance of n-type GaSb 44
X-ray determination of the mean-square vibrational amplitudes of atoms in nearly perfect CdS crystals 43
Positron lifetimes in zinc-blend lattice structures 43
Occupancy level of the DX center in Te-doped AlxGa1-xSb 43
Minority carrier capture at DX centers in AlGaSb Schottky diodes 42
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 42
The role of phonon eigenvectors on the X-ray thermal diffuse scattering in GaAs 42
Determination of the thermal diffuse scattering at the Bragg reflections of Si and Al by means of the Mossbauer effect 41
Surface effects on positron annihilation in elementary semiconductors 41
Crystal defects in CdZnS/GaAs heterostrucures prepared by vapour phase chemical transport 41
Mean square vibrational amplitudes in PbTe 41
The influence of the DX centre on C-V and I-V characteristics of Schottky barriers in n-type AlGaAs 40
Determination of the thermal diffuse scattering at the Bragg reflections of Si and Al by means of the Mossbauer effect 40
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 39
Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells 39
Inclusion-like defects in Czochralski grown InP single crystals 38
Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells 38
In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells 38
Elecron traps and positive DLTS signals in VPE GaAs MESFETs 37
Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels 36
Electrical characterization of sels-assembled InAs/GaAs quantom dots by capacitance techniques 35
Negative magnetoresistance effects in metallic n-type GaSb 35
X-ray investigation of crystal defects in Czochralski grown InP single crystals 34
Effect of temperature on the anomalous transmission of X-rays in copper and zinc 34
X-ray study of PbSnTe 34
Electrical characterization of GaSb buried p-n junctions 34
DX-center-related features by capacitance measurements in AlGaAs 34
Growth and defect structure of CdS epitaxial layers on (111) Ge substrates 33
Diffuse X-ray scattering and the structure of oxide layers on real GaAs (111) surfaces 33
Oxidation stacking faults in epitaxial silicon crystals 33
Hole capture by the DX center in AlGaAs Schottky barriers 32
Electron scattering by spatially correlated DX charges 32
Use of spatially dependent electron capture to profile deep-level densities in Schottky barriers 32
Temperature dependence of optical absorption induced by exciton resonances in GaAs/AlGaAs muliple quantum wells 31
Totale 5.030
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Categoria #
all - tutte 17.344
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.344
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201986 0 0 0 0 0 0 0 0 0 0 83 3
2019/20201.361 241 149 108 19 135 153 183 20 145 73 25 110
2020/2021825 3 110 104 4 109 6 109 4 169 54 150 3
2021/2022557 8 6 4 15 25 4 93 123 21 50 58 150
2022/20231.565 209 151 87 106 136 176 15 97 538 3 34 13
2023/2024353 32 54 25 11 32 132 29 14 9 15 0 0
Totale 5.377