GHEZZI, Carlo

GHEZZI, Carlo  

Dipartimento di Fisica (attivo dal 01/01/1900 al 25/07/2012)  

Mostra records
Risultati 1 - 20 di 111 (tempo di esecuzione: 0.019 secondi).
Titolo Data di pubblicazione Autore(i) File
A simple X-ray fluorescence method for determining the composition of PbSnTe psoudobinary alloys 1-gen-1976 V., Fano; Ghezzi, Carlo; L., Zanotti
A study of microdefects in n-type doped GaAs crystals using cathodoluminescence and X-ray techniques 1-gen-1985 R., Fornari; P., Franzosi; G., Salviati; C., Ferrari; Ghezzi, Carlo
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques 1-gen-1985 Fornari, Roberto; P., Franzosi; G., Salviati; C., Ferrari; Ghezzi, Carlo
ac admittance of CdZnS/p-GaAs hetorojunctions 1-gen-1982 P., Franzosi; E., Gombia; Ghezzi, Carlo
Admittance of semiconductor junctions with gap states having a continuous distribution in energy 1-gen-1983 Ghezzi, Carlo; P., Franzosi; E., Gombia
Admittance spectroscopy of GaAs/InGaP MQW structures 1-gen-2008 E., Gombia; Ghezzi, Carlo; Parisini, Antonella; Tarricone, Luciano; M., Longo
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures 1-gen-2013 M., Baldini; Gombia, Enos; Parisini, Antonella; Ghezzi, Carlo; Gorni, Marco
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs 1-gen-1991 Baraldi, Andrea; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.
Analysis of persistent photoconductivity in sulphur doped GaSb 1-gen-1995 Baraldi, Andrea; Ghezzi, C.; Parisini, Antonella; Hubik, P.; Mares, J. J.; Kristofik, J.
Anharmonic contributions to elastic and inelastic scattering of X-rays at Bragg reflections in Aluminum 1-gen-1973 G., Albanese; Ghezzi, Carlo
Anharmonic contributions to elastic and inelastic scattering of X-rays at Bragg reflections in Aluminum 1-gen-1973 G., Albanese; Ghezzi, Carlo
Anharmonic contributions to the Debye-Waller factor for Zn 1-gen-1976 G., Albanese; Deriu, Antonio; Ghezzi, Carlo
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 1-gen-2010 Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Vantaggio, Salvatore; M., Baldini; E., Gombia
Application of the Mossbauer effect to the study of elastic and inelastic scattering of gamma rays in amorphous SiO2 1-gen-1974 G., Albanese; Ghezzi, Carlo
Coexistence of th DX center and other Si-related electron bound states in AlGaAs 1-gen-1994 Baraldi, Andrea; Frigeri, P.; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.; Gombia, E.; Mosca, R.
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility 1-gen-1996 Baraldi, Andrea; Frigeri, P.; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.; Gombia, E.; Mosca, R.
Concentration dependence of optical absorption in Tellurium doped GaSb 1-gen-1997 Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Rotelli, B.; Tarricone, L.; Bosacchi, A.; Franchi, S.
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 1-gen-1997 Baraldi, Andrea; Colonna, F.; Covucci, G.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano; Bosacchi, A.; Franchi, S.
Crystal defects in CdZnS/GaAs heterostrucures prepared by vapour phase chemical transport 1-gen-1981 P., Franzosi; Ghezzi, Carlo; E., Gombia
Determination of the inelastic scattering at Bragg reflections of KCl by means of the Mossbauer effect:contribution of multiphonon scatterig terms 1-gen-1973 G., Albanese; Ghezzi, Carlo; A., Merlini