GHEZZI, Carlo
GHEZZI, Carlo
Dipartimento di Fisica (attivo dal 01/01/1900 al 25/07/2012)
A shallow state coexisting with the DX center in Te-doped AlGaSb
1998-01-01 Baraldi, Andrea; Franchi, S.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano
A simple X-ray fluorescence method for determining the composition of PbSnTe psoudobinary alloys
1976-01-01 V., Fano; Ghezzi, Carlo; L., Zanotti
A study of microdefects in n-type doped GaAs crystals using cathodoluminescence and X-ray techniques
1985-01-01 R., Fornari; P., Franzosi; G., Salviati; C., Ferrari; Ghezzi, Carlo
A Study of Microdefects In N-type Doped Gaas Crystals Using Cathodoluminescence and X-ray Techniques
1985-01-01 Fornari, Roberto; P., Franzosi; G., Salviati; C., Ferrari; Ghezzi, Carlo
ac admittance of CdZnS/p-GaAs hetorojunctions
1982-01-01 P., Franzosi; E., Gombia; Ghezzi, Carlo
Admittance of semiconductor junctions with gap states having a continuous distribution in energy
1983-01-01 Ghezzi, Carlo; P., Franzosi; E., Gombia
Admittance spectroscopy of GaAs/InGaP MQW structures
2008-01-01 E., Gombia; Ghezzi, Carlo; Parisini, Antonella; Tarricone, Luciano; M., Longo
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures
2013-01-01 M., Baldini; Gombia, Enos; Parisini, Antonella; Ghezzi, Carlo; Gorni, Marco
Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAs
1991-01-01 Baraldi, Andrea; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.
Analysis of persistent photoconductivity in sulphur doped GaSb
1995-01-01 Baraldi, Andrea; Ghezzi, C.; Parisini, Antonella; Hubik, P.; Mares, J. J.; Kristofik, J.
Anharmonic contributions to elastic and inelastic scattering of X-rays at Bragg reflections in Aluminum
1973-01-01 G., Albanese; Ghezzi, Carlo
Anharmonic contributions to elastic and inelastic scattering of X-rays at Bragg reflections in Aluminum
1973-01-01 G., Albanese; Ghezzi, Carlo
Anharmonic contributions to the Debye-Waller factor for Zn
1976-01-01 G., Albanese; Deriu, Antonio; Ghezzi, Carlo
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices
2010-01-01 Parisini, Antonella; Ghezzi, Carlo; Tarricone, Luciano; Vantaggio, Salvatore; M., Baldini; E., Gombia
Application of the Mossbauer effect to the study of elastic and inelastic scattering of gamma rays in amorphous SiO2
1974-01-01 G., Albanese; Ghezzi, Carlo
Coexistence of th DX center and other Si-related electron bound states in AlGaAs
1994-01-01 Baraldi, Andrea; Frigeri, P.; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.; Gombia, E.; Mosca, R.
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: effects on the low-temperature electron mobility
1996-01-01 Baraldi, Andrea; Frigeri, P.; Ghezzi, Carlo; Parisini, Antonella; Bosacchi, A.; Franchi, S.; Gombia, E.; Mosca, R.
Concentration dependence of optical absorption in Tellurium doped GaSb
1997-01-01 Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Rotelli, B.; Tarricone, L.; Bosacchi, A.; Franchi, S.
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity
1997-01-01 Baraldi, Andrea; Colonna, F.; Covucci, G.; Ghezzi, Carlo; Magnanini, R.; Parisini, Antonella; Tarricone, Luciano; Bosacchi, A.; Franchi, S.
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity
1997-01-01 Baraldi, A; Colonna, F; Covucci, G; Ghezzi, C; Magnanini, R; Parisini, A; Tarricone, L; Bosacchi, A; Franchi, S