IRIS

Sfoglia per Autore  

Opzioni
Mostrati risultati da 1 a 20 di 91
Titolo Data di pubblicazione Autore(i) File
The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs 1-gen-1999 Menozzi, Roberto; D., Dieci; Sozzi, Giovanna; T., Tomasi; C., Lanzieri
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs 1-gen-1999 Menozzi, Roberto; D., Dieci; M., Messori; Sozzi, Giovanna; C., Lanzieri; C., Canali
Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs 1-gen-1999 Sozzi, Giovanna; D., Dieci; Menozzi, Roberto; C., Lanzieri; T., Tomasi; C., Canali
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions 1-gen-1999 Dieci, D.; Sozzi, Giovanna; Menozzi, Roberto; Lanzieri, C.; Cetronio, A.; Canali, C.
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation 1-gen-2000 D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali
Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help? 1-gen-2000 Menozzi, Roberto; Sozzi, Giovanna; E., Tediosi; D., Dieci; C., Lanzieri; C., Canali
Breakdown and degradation issues and the choice of a safe load line for power HFET operation 1-gen-2000 D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali
Surface-related kink effect in AlGaAs/GaAs power HFETs 1-gen-2001 E., Tediosi; G., Verzellesi; C., Canali; Sozzi, Giovanna; Menozzi, Roberto; C., Lanzieri
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 1-gen-2001 Menozzi, Roberto; Sozzi, Giovanna; Verzellesi, Giovanni; Borgarino, Mattia; Lanzieri, Claudio; Canali, Claudio
Numerical investigation of high-field degradation of power HFETs 1-gen-2001 Menozzi, Roberto; Sozzi, Giovanna
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 1-gen-2001 Menozzi, Roberto; Sozzi, Giovanna; G., Verzellesi; M., Borgarino; C., Canali; C., Lanzieri
Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design 1-gen-2001 Menozzi, Roberto; Sozzi, Giovanna; G., Verzellesi; M., Borgarino; C., Lanzieri; C., Canali
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 1-gen-2001 Tediosi, E.; Borgarino, M.; Verzellesi, G.; Sozzi, Giovanna; Menozzi, Roberto
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown 1-gen-2001 Dieci, D.; Sozzi, Giovanna; Menozzi, Roberto; Tediosi, E.; Lanzieri, C.; Canali, C.
Gate-lag effects in AlGaAs/GaAs power HFET’s 1-gen-2001 M., Borgarino; Sozzi, Giovanna; A., Mazzanti; G., Verzellesi
Measurements and simulation of hot-carrier degradation effects in AlGaAs/GaAs HFETs 1-gen-2002 A., Mazzanti; G., Verzellesi; A. F., Basile; C., Canali; Sozzi, Giovanna; Menozzi, Roberto
Physical investigation of trap-related effects in power HFETs and their reliability implications 1-gen-2002 Mazzanti, A.; Verzellesi, G.; Sozzi, Giovanna; Menozzi, Roberto; Lanzieri, C.; Canali, C.
High-electric field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study 1-gen-2002 Sozzi, Giovanna; Menozzi, Roberto
Numerical analysis of hot-electron degradation modes in AlGaAs/GaAs power HFETs 1-gen-2002 A., Mazzanti; G., Verzellesi; C., Canali; Sozzi, Giovanna; Menozzi, Roberto
High reliable high power diode for welding applications 1-gen-2004 Cova, Paolo; Fasce, F; Pampili, P.; Portesine, M.; Sozzi, Giovanna; Zani, P. E.
Mostrati risultati da 1 a 20 di 91
Legenda icone

  •  file ad accesso aperto
  •  file disponibili sulla rete interna
  •  file disponibili agli utenti autorizzati
  •  file disponibili solo agli amministratori
  •  file sotto embargo
  •  nessun file disponibile