Sfoglia per Autore
Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs
1999-01-01 Sozzi, Giovanna; D., Dieci; Menozzi, Roberto; C., Lanzieri; T., Tomasi; C., Canali
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs
1999-01-01 Menozzi, Roberto; D., Dieci; M., Messori; Sozzi, Giovanna; C., Lanzieri; C., Canali
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions
1999-01-01 Dieci, D.; Sozzi, Giovanna; Menozzi, Roberto; Lanzieri, C.; Cetronio, A.; Canali, C.
The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs
1999-01-01 Menozzi, Roberto; D., Dieci; Sozzi, Giovanna; T., Tomasi; C., Lanzieri
Breakdown and degradation issues and the choice of a safe load line for power HFET operation
2000-01-01 D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali
Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help?
2000-01-01 Menozzi, Roberto; Sozzi, Giovanna; E., Tediosi; D., Dieci; C., Lanzieri; C., Canali
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation
2000-01-01 D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali
Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design
2001-01-01 Menozzi, Roberto; Sozzi, Giovanna; G., Verzellesi; M., Borgarino; C., Lanzieri; C., Canali
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs
2001-01-01 Tediosi, E.; Borgarino, M.; Verzellesi, G.; Sozzi, Giovanna; Menozzi, Roberto
Gate-lag effects in AlGaAs/GaAs power HFET’s
2001-01-01 M., Borgarino; Sozzi, Giovanna; A., Mazzanti; G., Verzellesi
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs
2001-01-01 Menozzi, Roberto; Sozzi, Giovanna; G., Verzellesi; M., Borgarino; C., Canali; C., Lanzieri
Numerical investigation of high-field degradation of power HFETs
2001-01-01 Menozzi, Roberto; Sozzi, Giovanna
Surface-related kink effect in AlGaAs/GaAs power HFETs
2001-01-01 E., Tediosi; G., Verzellesi; C., Canali; Sozzi, Giovanna; Menozzi, Roberto; C., Lanzieri
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown
2001-01-01 Dieci, D.; Sozzi, Giovanna; Menozzi, Roberto; Tediosi, E.; Lanzieri, C.; Canali, C.
Physical investigation of trap-related effects in power HFETs and their reliability implications
2002-01-01 Mazzanti, A.; Verzellesi, G.; Sozzi, Giovanna; Menozzi, Roberto; Lanzieri, C.; Canali, C.
Measurements and simulation of hot-carrier degradation effects in AlGaAs/GaAs HFETs
2002-01-01 A., Mazzanti; G., Verzellesi; A. F., Basile; C., Canali; Sozzi, Giovanna; Menozzi, Roberto
Numerical analysis of hot-electron degradation modes in AlGaAs/GaAs power HFETs
2002-01-01 A., Mazzanti; G., Verzellesi; C., Canali; Sozzi, Giovanna; Menozzi, Roberto
High-electric field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study
2002-01-01 Sozzi, Giovanna; Menozzi, Roberto
A software tool for thermal simulation and rating evaluation of high power silicon devices
2004-01-01 Pampili, P.; Portesine, M.; Cova, Paolo; Sozzi, Giovanna
Temperature-dependent breakdown and hot carrier stress of PHEMTs
2004-01-01 Cova, Paolo; Delmonte, Nicola; Sozzi, Giovanna; Menozzi, Roberto
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs | 1-gen-1999 | Sozzi, Giovanna; D., Dieci; Menozzi, Roberto; C., Lanzieri; T., Tomasi; C., Canali | |
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs | 1-gen-1999 | Menozzi, Roberto; D., Dieci; M., Messori; Sozzi, Giovanna; C., Lanzieri; C., Canali | |
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions | 1-gen-1999 | Dieci, D.; Sozzi, Giovanna; Menozzi, Roberto; Lanzieri, C.; Cetronio, A.; Canali, C. | |
The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs | 1-gen-1999 | Menozzi, Roberto; D., Dieci; Sozzi, Giovanna; T., Tomasi; C., Lanzieri | |
Breakdown and degradation issues and the choice of a safe load line for power HFET operation | 1-gen-2000 | D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali | |
Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help? | 1-gen-2000 | Menozzi, Roberto; Sozzi, Giovanna; E., Tediosi; D., Dieci; C., Lanzieri; C., Canali | |
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation | 1-gen-2000 | D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali | |
Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design | 1-gen-2001 | Menozzi, Roberto; Sozzi, Giovanna; G., Verzellesi; M., Borgarino; C., Lanzieri; C., Canali | |
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs | 1-gen-2001 | Tediosi, E.; Borgarino, M.; Verzellesi, G.; Sozzi, Giovanna; Menozzi, Roberto | |
Gate-lag effects in AlGaAs/GaAs power HFET’s | 1-gen-2001 | M., Borgarino; Sozzi, Giovanna; A., Mazzanti; G., Verzellesi | |
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs | 1-gen-2001 | Menozzi, Roberto; Sozzi, Giovanna; G., Verzellesi; M., Borgarino; C., Canali; C., Lanzieri | |
Numerical investigation of high-field degradation of power HFETs | 1-gen-2001 | Menozzi, Roberto; Sozzi, Giovanna | |
Surface-related kink effect in AlGaAs/GaAs power HFETs | 1-gen-2001 | E., Tediosi; G., Verzellesi; C., Canali; Sozzi, Giovanna; Menozzi, Roberto; C., Lanzieri | |
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown | 1-gen-2001 | Dieci, D.; Sozzi, Giovanna; Menozzi, Roberto; Tediosi, E.; Lanzieri, C.; Canali, C. | |
Physical investigation of trap-related effects in power HFETs and their reliability implications | 1-gen-2002 | Mazzanti, A.; Verzellesi, G.; Sozzi, Giovanna; Menozzi, Roberto; Lanzieri, C.; Canali, C. | |
Measurements and simulation of hot-carrier degradation effects in AlGaAs/GaAs HFETs | 1-gen-2002 | A., Mazzanti; G., Verzellesi; A. F., Basile; C., Canali; Sozzi, Giovanna; Menozzi, Roberto | |
Numerical analysis of hot-electron degradation modes in AlGaAs/GaAs power HFETs | 1-gen-2002 | A., Mazzanti; G., Verzellesi; C., Canali; Sozzi, Giovanna; Menozzi, Roberto | |
High-electric field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study | 1-gen-2002 | Sozzi, Giovanna; Menozzi, Roberto | |
A software tool for thermal simulation and rating evaluation of high power silicon devices | 1-gen-2004 | Pampili, P.; Portesine, M.; Cova, Paolo; Sozzi, Giovanna | |
Temperature-dependent breakdown and hot carrier stress of PHEMTs | 1-gen-2004 | Cova, Paolo; Delmonte, Nicola; Sozzi, Giovanna; Menozzi, Roberto |
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