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Mostrati risultati da 1 a 20 di 79
Titolo Data di pubblicazione Autore(i) File
Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs 1-gen-1999 Sozzi, Giovanna; D., Dieci; Menozzi, Roberto; C., Lanzieri; T., Tomasi; C., Canali
Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs 1-gen-1999 Menozzi, Roberto; D., Dieci; M., Messori; Sozzi, Giovanna; C., Lanzieri; C., Canali
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions 1-gen-1999 Dieci, D.; Sozzi, Giovanna; Menozzi, Roberto; Lanzieri, C.; Cetronio, A.; Canali, C.
The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs 1-gen-1999 Menozzi, Roberto; D., Dieci; Sozzi, Giovanna; T., Tomasi; C., Lanzieri
Breakdown and degradation issues and the choice of a safe load line for power HFET operation 1-gen-2000 D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali
Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help? 1-gen-2000 Menozzi, Roberto; Sozzi, Giovanna; E., Tediosi; D., Dieci; C., Lanzieri; C., Canali
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation 1-gen-2000 D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali
Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design 1-gen-2001 Menozzi, Roberto; Sozzi, Giovanna; G., Verzellesi; M., Borgarino; C., Lanzieri; C., Canali
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 1-gen-2001 Tediosi, E.; Borgarino, M.; Verzellesi, G.; Sozzi, Giovanna; Menozzi, Roberto
Gate-lag effects in AlGaAs/GaAs power HFET’s 1-gen-2001 M., Borgarino; Sozzi, Giovanna; A., Mazzanti; G., Verzellesi
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 1-gen-2001 Menozzi, Roberto; Sozzi, Giovanna; G., Verzellesi; M., Borgarino; C., Canali; C., Lanzieri
Numerical investigation of high-field degradation of power HFETs 1-gen-2001 Menozzi, Roberto; Sozzi, Giovanna
Surface-related kink effect in AlGaAs/GaAs power HFETs 1-gen-2001 E., Tediosi; G., Verzellesi; C., Canali; Sozzi, Giovanna; Menozzi, Roberto; C., Lanzieri
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown 1-gen-2001 Dieci, D.; Sozzi, Giovanna; Menozzi, Roberto; Tediosi, E.; Lanzieri, C.; Canali, C.
Physical investigation of trap-related effects in power HFETs and their reliability implications 1-gen-2002 Mazzanti, A.; Verzellesi, G.; Sozzi, Giovanna; Menozzi, Roberto; Lanzieri, C.; Canali, C.
Measurements and simulation of hot-carrier degradation effects in AlGaAs/GaAs HFETs 1-gen-2002 A., Mazzanti; G., Verzellesi; A. F., Basile; C., Canali; Sozzi, Giovanna; Menozzi, Roberto
Numerical analysis of hot-electron degradation modes in AlGaAs/GaAs power HFETs 1-gen-2002 A., Mazzanti; G., Verzellesi; C., Canali; Sozzi, Giovanna; Menozzi, Roberto
High-electric field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study 1-gen-2002 Sozzi, Giovanna; Menozzi, Roberto
A software tool for thermal simulation and rating evaluation of high power silicon devices 1-gen-2004 Pampili, P.; Portesine, M.; Cova, Paolo; Sozzi, Giovanna
Temperature-dependent breakdown and hot carrier stress of PHEMTs 1-gen-2004 Cova, Paolo; Delmonte, Nicola; Sozzi, Giovanna; Menozzi, Roberto
Mostrati risultati da 1 a 20 di 79
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