Sfoglia per Autore
Layout dependence of CMOS latchup
1988-01-01 Menozzi, Roberto; L., Selmi; E., Sangiorgi; G., Crisenza; T., Cavioni; B., Riccò
Latch-up testing in CMOS IC’s
1990-01-01 Menozzi, Roberto; M., Lanzoni; C., Fiegna; E., Sangiorgi; B., Riccò
Effects of the interaction of neighboring structures on the latch-up behavior of C-MOS IC’s
1991-01-01 Menozzi, Roberto; L., Selmi; E., Sangiorgi; B., Riccò
Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFET’s
1992-01-01 L., Selmi; Menozzi, Roberto; P., Gandolfi; B., Riccò
Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs(MBE) Schottky barriers
1993-01-01 A., Bosacchi; S., Franchi; E., Gombia; R., Mosca; F., Fantini; S., Franchi; Menozzi, Roberto
Experimental application of a novel technique to extract gate bias dependentsource and drain parasitic resistances of GaAs MESFETs
1993-01-01 Menozzi, Roberto; Cova, Paolo; Selmi, L.
A Test Pattern For Three-Dimensional Latch-up Analysis
1993-01-01 DE MUNARI, Ilaria; Menozzi, Roberto; M., Davoli; F., Fantini
Design and Simulation of a Test Pattern for Three-Dimensional Latch-up Analysis
1993-01-01 DE MUNARI, Ilaria; Menozzi, Roberto; F., Fantini
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers
1994-01-01 A., Bosacchi; S., Franchi; E., Gombia; R., Mosca; F., Fantini; Menozzi, Roberto; S., Naccarella
Light emission spectra of commercial pseudomorphic HEMTs biased in the impact ionization regime
1994-01-01 Cova, Paolo; Chioato, E; Conti, P; Dallaglio, S; Fantini, F; Manfredi, M; Menozzi, Roberto; Necchi, R.
Light emission in commercial pseudomorphic HEMTs
1994-01-01 Menozzi, Roberto; Cova, Paolo; Dallaglio, S; Manfredi, M; Conti, P; Fantini, F.
Caratterizzazione di HEMT pseudomorfici in condizioni di ionizzazione da impatto e stress da hot-electron
1995-01-01 Cova, Paolo; Fantini, F; Manfredi, M; Menozzi, Roberto
Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMT’s induced by hot-electrons
1995-01-01 Canali, C; Cova, Paolo; DE BORTOLI, E; Fantini, F; Meneghesso, G; Menozzi, Roberto; Zanoni, E.
Numerical analysis of the extraction of barrier height and Richardson constant of Schottky contacts on AlGaAs/GaAs heterostructures
1995-01-01 Menozzi, Roberto
On the temperature and hot electron induced degradation on AlGaAs/InGaAs PM-HEMTs
1995-01-01 Meneghesso, G; DE BORTOLI, E; Cova, Paolo; Menozzi, Roberto
Hot electron degradation effects in Al0.25Ga0.75As/In0.2Ga0.8As PHEMTs
1995-01-01 Cova, Paolo; Menozzi, Roberto; Lacey, D; Bayens, Y; Fantini, F.
Hot electron degradation in pseudomorphic HEMTs
1995-01-01 Cova, Paolo; Menozzi, Roberto; Fantini, F.
Band to band recombination peak in the light emission of commercial pseudomorphic HEMTs
1995-01-01 Menozzi, Roberto; Cova, Paolo; A., Pisano; F., Fantini; Pavesi, Maura; AND P., Conti
DC and RF instability of GaAs-based PHEMTs due to hot electrons
1996-01-01 Menozzi, Roberto; Borgarino, M; Cova, Paolo; Baeyens, Y; Pavesi, Maura; Fantini, F.
Hot electron degradation in DC and RF characteristics of GaAs and InP HEMT
1996-01-01 Menozzi, Roberto; M., Borgarino; Cova, Paolo; F., Fantini; A., Santarelli; G., Vannini
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Layout dependence of CMOS latchup | 1-gen-1988 | Menozzi, Roberto; L., Selmi; E., Sangiorgi; G., Crisenza; T., Cavioni; B., Riccò | |
Latch-up testing in CMOS IC’s | 1-gen-1990 | Menozzi, Roberto; M., Lanzoni; C., Fiegna; E., Sangiorgi; B., Riccò | |
Effects of the interaction of neighboring structures on the latch-up behavior of C-MOS IC’s | 1-gen-1991 | Menozzi, Roberto; L., Selmi; E., Sangiorgi; B., Riccò | |
Numerical analysis of the gate voltage dependence of the series resistances and effective channel length in submicrometer GaAs MESFET’s | 1-gen-1992 | L., Selmi; Menozzi, Roberto; P., Gandolfi; B., Riccò | |
Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs(MBE) Schottky barriers | 1-gen-1993 | A., Bosacchi; S., Franchi; E., Gombia; R., Mosca; F., Fantini; S., Franchi; Menozzi, Roberto | |
Experimental application of a novel technique to extract gate bias dependentsource and drain parasitic resistances of GaAs MESFETs | 1-gen-1993 | Menozzi, Roberto; Cova, Paolo; Selmi, L. | |
A Test Pattern For Three-Dimensional Latch-up Analysis | 1-gen-1993 | DE MUNARI, Ilaria; Menozzi, Roberto; M., Davoli; F., Fantini | |
Design and Simulation of a Test Pattern for Three-Dimensional Latch-up Analysis | 1-gen-1993 | DE MUNARI, Ilaria; Menozzi, Roberto; F., Fantini | |
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers | 1-gen-1994 | A., Bosacchi; S., Franchi; E., Gombia; R., Mosca; F., Fantini; Menozzi, Roberto; S., Naccarella | |
Light emission spectra of commercial pseudomorphic HEMTs biased in the impact ionization regime | 1-gen-1994 | Cova, Paolo; Chioato, E; Conti, P; Dallaglio, S; Fantini, F; Manfredi, M; Menozzi, Roberto; Necchi, R. | |
Light emission in commercial pseudomorphic HEMTs | 1-gen-1994 | Menozzi, Roberto; Cova, Paolo; Dallaglio, S; Manfredi, M; Conti, P; Fantini, F. | |
Caratterizzazione di HEMT pseudomorfici in condizioni di ionizzazione da impatto e stress da hot-electron | 1-gen-1995 | Cova, Paolo; Fantini, F; Manfredi, M; Menozzi, Roberto | |
Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMT’s induced by hot-electrons | 1-gen-1995 | Canali, C; Cova, Paolo; DE BORTOLI, E; Fantini, F; Meneghesso, G; Menozzi, Roberto; Zanoni, E. | |
Numerical analysis of the extraction of barrier height and Richardson constant of Schottky contacts on AlGaAs/GaAs heterostructures | 1-gen-1995 | Menozzi, Roberto | |
On the temperature and hot electron induced degradation on AlGaAs/InGaAs PM-HEMTs | 1-gen-1995 | Meneghesso, G; DE BORTOLI, E; Cova, Paolo; Menozzi, Roberto | |
Hot electron degradation effects in Al0.25Ga0.75As/In0.2Ga0.8As PHEMTs | 1-gen-1995 | Cova, Paolo; Menozzi, Roberto; Lacey, D; Bayens, Y; Fantini, F. | |
Hot electron degradation in pseudomorphic HEMTs | 1-gen-1995 | Cova, Paolo; Menozzi, Roberto; Fantini, F. | |
Band to band recombination peak in the light emission of commercial pseudomorphic HEMTs | 1-gen-1995 | Menozzi, Roberto; Cova, Paolo; A., Pisano; F., Fantini; Pavesi, Maura; AND P., Conti | |
DC and RF instability of GaAs-based PHEMTs due to hot electrons | 1-gen-1996 | Menozzi, Roberto; Borgarino, M; Cova, Paolo; Baeyens, Y; Pavesi, Maura; Fantini, F. | |
Hot electron degradation in DC and RF characteristics of GaAs and InP HEMT | 1-gen-1996 | Menozzi, Roberto; M., Borgarino; Cova, Paolo; F., Fantini; A., Santarelli; G., Vannini |
Legenda icone
- file ad accesso aperto
- file disponibili sulla rete interna
- file disponibili agli utenti autorizzati
- file disponibili solo agli amministratori
- file sotto embargo
- nessun file disponibile