Outstanding stability has been observed in Al/AlxGa1-xAs and Al/GaAs/AlxGa1-xAs (x=0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400 degrees C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported.
Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs(MBE) Schottky barriers / A. Bosacchi; S. Franchi; E. Gombia; R. Mosca; F. Fantini; S. Franchi; R. Menozzi. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - 29(1993), pp. 651-653. [10.1049/el:19930436]