Outstanding stability has been observed in Al/AlxGa1-xAs and Al/GaAs/AlxGa1-xAs (x=0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400 degrees C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported.
Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs(MBE) Schottky barriers / A., Bosacchi; S., Franchi; E., Gombia; R., Mosca; F., Fantini; S., Franchi; Menozzi, Roberto. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - 29:(1993), pp. 651-653. [10.1049/el:19930436]
Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs(MBE) Schottky barriers
MENOZZI, Roberto
1993-01-01
Abstract
Outstanding stability has been observed in Al/AlxGa1-xAs and Al/GaAs/AlxGa1-xAs (x=0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400 degrees C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
00209928.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
227.3 kB
Formato
Adobe PDF
|
227.3 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
