The extraction of barrier height and Richardson constant by means of I–V measurements as a function of temperature has been simulated for Al Schottky contacts on AlGaAs/GaAs heterostructures. Different sources of inaccuracies have been studied, and the dependence of the extracted values on the heterojunction features (conduction band discontinuity, electron velocity across the junction, distance from the Schottky contact) has been considered. Although the diodes show nearly ideal characteristics, relevant errors are observed in the extracted values of barrier height and Richardson constant.
Numerical analysis of the extraction of barrier height and Richardson constant of Schottky contacts on AlGaAs/GaAs heterostructures / Menozzi, Roberto. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 38:(1995), pp. 1511-1514. [10.1016/0038-1101(94)00272-H]
Numerical analysis of the extraction of barrier height and Richardson constant of Schottky contacts on AlGaAs/GaAs heterostructures
MENOZZI, Roberto
1995-01-01
Abstract
The extraction of barrier height and Richardson constant by means of I–V measurements as a function of temperature has been simulated for Al Schottky contacts on AlGaAs/GaAs heterostructures. Different sources of inaccuracies have been studied, and the dependence of the extracted values on the heterojunction features (conduction band discontinuity, electron velocity across the junction, distance from the Schottky contact) has been considered. Although the diodes show nearly ideal characteristics, relevant errors are observed in the extracted values of barrier height and Richardson constant.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
