The extraction of barrier height and Richardson constant by means of I–V measurements as a function of temperature has been simulated for Al Schottky contacts on AlGaAs/GaAs heterostructures. Different sources of inaccuracies have been studied, and the dependence of the extracted values on the heterojunction features (conduction band discontinuity, electron velocity across the junction, distance from the Schottky contact) has been considered. Although the diodes show nearly ideal characteristics, relevant errors are observed in the extracted values of barrier height and Richardson constant.
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