IRIS
VANTAGGIO, Salvatore
 Distribuzione geografica
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Continente #
NA - Nord America 1.162
AS - Asia 990
EU - Europa 969
SA - Sud America 131
AF - Africa 52
Totale 3.304
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Nazione #
US - Stati Uniti d'America 1.131
SG - Singapore 450
CN - Cina 298
IT - Italia 266
IE - Irlanda 136
SE - Svezia 129
BR - Brasile 108
FI - Finlandia 87
HK - Hong Kong 82
DE - Germania 77
VN - Vietnam 64
FR - Francia 61
NL - Olanda 54
GB - Regno Unito 36
ZA - Sudafrica 31
RU - Federazione Russa 28
UA - Ucraina 28
TR - Turchia 27
CA - Canada 17
BE - Belgio 16
IN - India 14
PL - Polonia 11
AT - Austria 10
ID - Indonesia 10
MX - Messico 10
JP - Giappone 9
KR - Corea 8
MA - Marocco 8
BD - Bangladesh 7
AR - Argentina 6
CZ - Repubblica Ceca 6
EC - Ecuador 6
CO - Colombia 4
NG - Nigeria 4
PT - Portogallo 4
RO - Romania 4
AE - Emirati Arabi Uniti 3
IR - Iran 3
PK - Pakistan 3
TN - Tunisia 3
AL - Albania 2
CI - Costa d'Avorio 2
IQ - Iraq 2
KE - Kenya 2
LK - Sri Lanka 2
LT - Lituania 2
PY - Paraguay 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
UY - Uruguay 2
UZ - Uzbekistan 2
VE - Venezuela 2
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
BO - Bolivia 1
BS - Bahamas 1
CH - Svizzera 1
DK - Danimarca 1
DZ - Algeria 1
ES - Italia 1
HN - Honduras 1
HU - Ungheria 1
IL - Israele 1
IS - Islanda 1
JM - Giamaica 1
JO - Giordania 1
KZ - Kazakistan 1
LV - Lettonia 1
MC - Monaco 1
NO - Norvegia 1
PA - Panama 1
SN - Senegal 1
Totale 3.304
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Città #
Singapore 229
Ashburn 167
Chandler 146
Dublin 136
Ann Arbor 110
Parma 109
Santa Clara 99
Dallas 91
Hong Kong 80
Beijing 72
Shanghai 49
Boardman 47
Strasbourg 42
Jacksonville 36
Los Angeles 30
Johannesburg 29
Munich 29
Hefei 28
Ho Chi Minh City 26
Dearborn 24
Helsinki 22
Nanjing 21
Princeton 21
New York 18
Brussels 14
Hanoi 14
Izmir 14
Turku 14
Brooklyn 12
Wilmington 11
Guangzhou 10
Bologna 9
London 9
Moscow 9
São Paulo 9
Warsaw 9
Houston 8
Jakarta 8
Milan 8
Rome 8
San Jose 8
Seoul 8
Shenyang 8
Toronto 8
Vienna 8
Frankfurt am Main 7
Kocaeli 7
Orem 7
Seattle 7
Tokyo 7
Amsterdam 6
Des Moines 6
Mumbai 6
Nanchang 6
Nuremberg 6
Poplar 6
Atlanta 5
Berlin 5
Chicago 5
Civitavecchia 5
Fremont 5
Marseille 5
Ottawa 5
Phoenix 5
Segrate 5
Stockholm 5
The Dalles 5
Boston 4
Brno 4
Columbus 4
Dronten 4
Haikou 4
Haiphong 4
Istanbul 4
Jinan 4
Kunming 4
Lagos 4
Manchester 4
Novi di Modena 4
San Mateo 4
Scandicci 4
Tianjin 4
Bengaluru 3
Bremen 3
Buffalo 3
Chennai 3
Curitiba 3
Denver 3
Falkenstein 3
Hangzhou 3
Hebei 3
Malcesine 3
Mirandola 3
Multan 3
Norwalk 3
Paris 3
Redwood City 3
Reggio Nell'emilia 3
Woodbridge 3
Abbiategrasso 2
Totale 2.106
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Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 224
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 191
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 160
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 154
Si and Sn doping of ε-Ga2O3 layers 146
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 143
Sol-gel growth and characterization of In2O3 thin films 143
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 142
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 136
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 122
Electrical characterization of a buried GaSb p-n junction controlled by native defects 122
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 118
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 115
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 112
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time 112
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 110
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 104
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 103
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 101
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 101
Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy 100
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 97
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 96
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 92
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 91
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies 91
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 88
The role of the polyelectrolyte composition in kinetic behaviour of organic memristive device 84
Totale 3.398
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Categoria #
all - tutte 11.861
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 11.861
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021138 0 0 0 0 0 20 9 16 37 34 14 8
2021/2022148 12 13 0 5 16 5 19 13 12 15 6 32
2022/2023602 84 78 44 51 41 58 7 48 158 6 23 4
2023/2024247 8 18 5 22 14 52 26 18 11 14 16 43
2024/2025867 13 30 31 77 89 97 59 85 126 62 68 130
2025/20261.035 183 152 206 173 261 60 0 0 0 0 0 0
Totale 3.398