VANTAGGIO, Salvatore
 Distribuzione geografica
Continente #
EU - Europa 849
NA - Nord America 808
AS - Asia 440
SA - Sud America 58
AF - Africa 13
Totale 2.168
Nazione #
US - Stati Uniti d'America 791
IT - Italia 237
SG - Singapore 196
CN - Cina 183
IE - Irlanda 135
SE - Svezia 125
FI - Finlandia 82
FR - Francia 55
DE - Germania 54
BR - Brasile 50
NL - Olanda 50
TR - Turchia 25
UA - Ucraina 24
GB - Regno Unito 18
RU - Federazione Russa 18
BE - Belgio 16
CA - Canada 13
IN - India 10
AT - Austria 9
ID - Indonesia 7
JP - Giappone 7
CZ - Repubblica Ceca 6
HK - Hong Kong 5
EC - Ecuador 4
NG - Nigeria 4
PT - Portogallo 4
MA - Marocco 3
RO - Romania 3
TN - Tunisia 3
CI - Costa d'Avorio 2
CO - Colombia 2
IR - Iran 2
LK - Sri Lanka 2
LT - Lituania 2
MX - Messico 2
SK - Slovacchia (Repubblica Slovacca) 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
BG - Bulgaria 1
BO - Bolivia 1
CH - Svizzera 1
DK - Danimarca 1
ES - Italia 1
HN - Honduras 1
HU - Ungheria 1
IQ - Iraq 1
IS - Islanda 1
KE - Kenya 1
LV - Lettonia 1
MC - Monaco 1
NO - Norvegia 1
PA - Panama 1
VE - Venezuela 1
Totale 2.168
Città #
Chandler 146
Dublin 135
Ann Arbor 110
Singapore 108
Santa Clara 98
Parma 96
Ashburn 48
Shanghai 47
Strasbourg 42
Beijing 38
Boardman 36
Jacksonville 36
Dearborn 24
Helsinki 22
Nanjing 21
Princeton 21
Brussels 14
Izmir 14
Los Angeles 13
Wilmington 11
Munich 10
Guangzhou 9
Moscow 9
New York 9
Turku 9
Milan 8
Rome 8
Shenyang 8
Hefei 7
Jakarta 7
Kocaeli 7
Seattle 7
Toronto 7
Vienna 7
Bologna 6
Des Moines 6
Houston 6
Mumbai 6
Nanchang 6
Amsterdam 5
Berlin 5
Brooklyn 5
Civitavecchia 5
Fremont 5
Marseille 5
Nuremberg 5
Ottawa 5
Segrate 5
The Dalles 5
Tokyo 5
Brno 4
Dronten 4
Frankfurt am Main 4
Haikou 4
Istanbul 4
Kunming 4
Lagos 4
Novi di Modena 4
San Mateo 4
Scandicci 4
Bengaluru 3
Bremen 3
Dallas 3
Falkenstein 3
Hangzhou 3
Hebei 3
Hong Kong 3
Jinan 3
London 3
Mirandola 3
Norwalk 3
Phoenix 3
Redwood City 3
Reggio Nell'emilia 3
São Paulo 3
Tianjin 3
Woodbridge 3
Abbiategrasso 2
Abidjan 2
Acqui Terme 2
Alessandria 2
Battipaglia 2
Bratislava 2
Bregnano 2
Campinas 2
Castelfranco Emilia 2
Chicago 2
Colombo 2
Corroios 2
Curitiba 2
Fairfield 2
Ghent 2
Glasgow 2
Grafing 2
Heidelberg 2
Langhirano 2
Lanzhou 2
Legnano 2
Meppel 2
Modena 2
Totale 1.414
Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 171
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 120
Si and Sn doping of ε-Ga2O3 layers 118
Sol-gel growth and characterization of In2O3 thin films 116
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 112
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 106
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 100
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 93
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 91
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 86
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 84
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 80
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 80
Electrical characterization of a buried GaSb p-n junction controlled by native defects 79
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 78
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time 77
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 74
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 73
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 73
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 70
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 70
The role of the polyelectrolyte composition in kinetic behaviour of organic memristive device 64
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies 64
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 64
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 62
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 48
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 8
Totale 2.261
Categoria #
all - tutte 8.895
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.895


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202012 0 0 0 0 0 0 0 0 0 0 0 12
2020/2021187 3 18 7 8 13 20 9 16 37 34 14 8
2021/2022148 12 13 0 5 16 5 19 13 12 15 6 32
2022/2023602 84 78 44 51 41 58 7 48 158 6 23 4
2023/2024247 8 18 5 22 14 52 26 18 11 14 16 43
2024/2025765 13 30 31 77 89 97 59 85 126 62 68 28
Totale 2.261