VANTAGGIO, Salvatore
 Distribuzione geografica
Continente #
EU - Europa 620
NA - Nord America 600
AS - Asia 220
AF - Africa 10
SA - Sud America 2
Totale 1.452
Nazione #
US - Stati Uniti d'America 592
CN - Cina 164
IT - Italia 141
IE - Irlanda 131
SE - Svezia 124
FI - Finlandia 63
FR - Francia 47
DE - Germania 27
SG - Singapore 25
UA - Ucraina 24
TR - Turchia 22
BE - Belgio 15
GB - Regno Unito 12
NL - Olanda 10
CA - Canada 8
JP - Giappone 7
CZ - Repubblica Ceca 5
RU - Federazione Russa 5
NG - Nigeria 4
AT - Austria 3
RO - Romania 3
TN - Tunisia 3
CI - Costa d'Avorio 2
CO - Colombia 2
IR - Iran 2
PT - Portogallo 2
BG - Bulgaria 1
CH - Svizzera 1
DK - Danimarca 1
ES - Italia 1
HU - Ungheria 1
LV - Lettonia 1
MA - Marocco 1
MC - Monaco 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 1.452
Città #
Chandler 146
Dublin 131
Ann Arbor 110
Parma 53
Shanghai 47
Strasbourg 42
Jacksonville 36
Beijing 35
Ashburn 33
Dearborn 24
Nanjing 21
Princeton 21
Izmir 14
Brussels 13
Singapore 13
Boardman 12
Helsinki 12
Wilmington 11
Guangzhou 9
Milan 8
New York 8
Shenyang 8
Kocaeli 7
Seattle 7
Des Moines 6
Houston 6
Nanchang 6
Bologna 5
Fremont 5
Los Angeles 5
Ottawa 5
Segrate 5
Tokyo 5
Brno 4
Dronten 4
Haikou 4
Kunming 4
Lagos 4
Novi di Modena 4
San Mateo 4
Bremen 3
Hangzhou 3
Hebei 3
Norwalk 3
Redwood City 3
Reggio Nell'emilia 3
Tianjin 3
Vienna 3
Woodbridge 3
Abbiategrasso 2
Abidjan 2
Acqui Terme 2
Alessandria 2
Battipaglia 2
Chicago 2
Corroios 2
Fairfield 2
Ghent 2
Glasgow 2
Grafing 2
Heidelberg 2
Jinan 2
Langhirano 2
Lanzhou 2
Legnano 2
London 2
Marseille 2
Meppel 2
Modena 2
Montegrotto Terme 2
Paris 2
Piacenza 2
Sant'ilario D'enza 2
Tomsk 2
Toronto 2
Voronezh 2
Amsterdam 1
Baotou 1
Bergamo 1
Bratislava 1
Brooklyn 1
Budapest 1
Changsha 1
Copenhagen 1
Correggio 1
Cremona 1
Crotone 1
Denver 1
Edinburgh 1
Enschede 1
Hefei 1
Istanbul 1
Jiaxing 1
Leiden 1
Lishui 1
Livingston 1
Madrid 1
Monaco 1
Ningbo 1
Phoenix 1
Totale 1.002
Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 130
Si and Sn doping of ε-Ga2O3 layers 95
Sol-gel growth and characterization of In2O3 thin films 93
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 82
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 79
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 74
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 68
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 68
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 62
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 59
Electrical characterization of a buried GaSb p-n junction controlled by native defects 56
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time 56
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 55
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 54
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 54
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 54
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 53
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 53
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 48
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 47
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies 46
The role of the polyelectrolyte composition in kinetic behaviour of organic memristive device 45
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 40
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 38
Totale 1.509
Categoria #
all - tutte 5.754
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.754


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020179 28 18 7 2 13 22 18 5 10 13 31 12
2020/2021187 3 18 7 8 13 20 9 16 37 34 14 8
2021/2022148 12 13 0 5 16 5 19 13 12 15 6 32
2022/2023602 84 78 44 51 41 58 7 48 158 6 23 4
2023/2024247 8 18 5 22 14 52 26 18 11 14 16 43
2024/202513 13 0 0 0 0 0 0 0 0 0 0 0
Totale 1.509