VANTAGGIO, Salvatore
 Distribuzione geografica
Continente #
EU - Europa 633
NA - Nord America 581
AS - Asia 171
AF - Africa 8
SA - Sud America 2
Totale 1.395
Nazione #
US - Stati Uniti d'America 573
IE - Irlanda 143
CN - Cina 139
IT - Italia 130
SE - Svezia 124
FI - Finlandia 63
FR - Francia 47
BE - Belgio 31
DE - Germania 27
UA - Ucraina 24
TR - Turchia 22
GB - Regno Unito 12
NL - Olanda 10
CA - Canada 8
JP - Giappone 7
AT - Austria 4
CZ - Repubblica Ceca 4
NG - Nigeria 4
RO - Romania 3
TN - Tunisia 3
CO - Colombia 2
IR - Iran 2
PT - Portogallo 2
BG - Bulgaria 1
CH - Svizzera 1
DK - Danimarca 1
ES - Italia 1
HU - Ungheria 1
LV - Lettonia 1
MA - Marocco 1
MC - Monaco 1
RU - Federazione Russa 1
SG - Singapore 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 1.395
Città #
Chandler 146
Dublin 143
Ann Arbor 110
Parma 45
Strasbourg 42
Jacksonville 36
Beijing 32
Ashburn 29
Brussels 29
Shanghai 28
Dearborn 24
Nanjing 21
Princeton 21
Izmir 14
Helsinki 12
Wilmington 11
Guangzhou 9
Milan 8
New York 8
Shenyang 8
Kocaeli 7
Seattle 7
Des Moines 6
Houston 6
Nanchang 6
Fremont 5
Ottawa 5
Segrate 5
Tokyo 5
Bologna 4
Dronten 4
Haikou 4
Kunming 4
Lagos 4
Novi di Modena 4
San Mateo 4
Vienna 4
Boardman 3
Bremen 3
Brno 3
Hangzhou 3
Hebei 3
Norwalk 3
Redwood City 3
Reggio Nell'emilia 3
Tianjin 3
Woodbridge 3
Abbiategrasso 2
Acqui Terme 2
Alessandria 2
Battipaglia 2
Chicago 2
Corroios 2
Fairfield 2
Ghent 2
Glasgow 2
Grafing 2
Heidelberg 2
Jinan 2
Langhirano 2
Lanzhou 2
Legnano 2
London 2
Marseille 2
Meppel 2
Modena 2
Montegrotto Terme 2
Paris 2
Sant'ilario D'enza 2
Toronto 2
Amsterdam 1
Baotou 1
Bergamo 1
Bratislava 1
Brooklyn 1
Budapest 1
Changsha 1
Copenhagen 1
Correggio 1
Cremona 1
Crotone 1
Denver 1
Edinburgh 1
Enschede 1
Hefei 1
Istanbul 1
Jiaxing 1
Leiden 1
Lishui 1
Livingston 1
Madrid 1
Monaco 1
Ningbo 1
Piacenza 1
Rabat 1
Riga 1
Romans 1
Rome 1
San Diego 1
Shaoxing 1
Totale 966
Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 125
Si and Sn doping of ε-Ga2O3 layers 96
Sol-gel growth and characterization of In2O3 thin films 88
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 85
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 74
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 71
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 68
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 66
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 60
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 58
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 55
Electrical characterization of a buried GaSb p-n junction controlled by native defects 54
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time 54
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 52
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 50
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 50
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 50
The role of the polyelectrolyte composition in kinetic behaviour of organic memristive device 49
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 48
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 48
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 45
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies 44
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 34
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 28
Totale 1.452
Categoria #
all - tutte 4.738
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.738


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201932 0 0 0 0 0 0 0 0 2 9 17 4
2019/2020179 28 18 7 2 13 22 18 5 10 13 31 12
2020/2021187 3 18 7 8 13 20 9 16 37 34 14 8
2021/2022148 12 13 0 5 16 5 19 13 12 15 6 32
2022/2023623 84 78 44 51 41 58 10 48 171 9 24 5
2023/2024182 11 21 5 24 14 52 26 18 11 0 0 0
Totale 1.452