VANTAGGIO, Salvatore
 Distribuzione geografica
Continente #
EU - Europa 862
NA - Nord America 810
AS - Asia 514
SA - Sud America 58
AF - Africa 13
Totale 2.257
Nazione #
US - Stati Uniti d'America 791
IT - Italia 239
SG - Singapore 209
CN - Cina 183
IE - Irlanda 135
SE - Svezia 125
FI - Finlandia 83
HK - Hong Kong 65
DE - Germania 62
FR - Francia 55
BR - Brasile 50
NL - Olanda 50
TR - Turchia 25
UA - Ucraina 24
GB - Regno Unito 19
RU - Federazione Russa 19
BE - Belgio 16
CA - Canada 14
IN - India 11
AT - Austria 9
ID - Indonesia 7
JP - Giappone 7
CZ - Repubblica Ceca 6
EC - Ecuador 4
NG - Nigeria 4
PT - Portogallo 4
MA - Marocco 3
MX - Messico 3
RO - Romania 3
TN - Tunisia 3
CI - Costa d'Avorio 2
CO - Colombia 2
IR - Iran 2
LK - Sri Lanka 2
LT - Lituania 2
SK - Slovacchia (Repubblica Slovacca) 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
BG - Bulgaria 1
BO - Bolivia 1
CH - Svizzera 1
DK - Danimarca 1
ES - Italia 1
HN - Honduras 1
HU - Ungheria 1
IQ - Iraq 1
IS - Islanda 1
KE - Kenya 1
LV - Lettonia 1
MC - Monaco 1
NO - Norvegia 1
PA - Panama 1
VE - Venezuela 1
Totale 2.257
Città #
Chandler 146
Dublin 135
Singapore 121
Ann Arbor 110
Santa Clara 98
Parma 96
Hong Kong 63
Ashburn 48
Shanghai 47
Strasbourg 42
Beijing 38
Boardman 36
Jacksonville 36
Dearborn 24
Helsinki 22
Nanjing 21
Princeton 21
Munich 18
Brussels 14
Izmir 14
Los Angeles 13
Wilmington 11
Turku 10
Guangzhou 9
Moscow 9
New York 9
Bologna 8
Milan 8
Rome 8
Shenyang 8
Hefei 7
Jakarta 7
Kocaeli 7
Seattle 7
Toronto 7
Vienna 7
Des Moines 6
Houston 6
Mumbai 6
Nanchang 6
Amsterdam 5
Berlin 5
Brooklyn 5
Civitavecchia 5
Fremont 5
Marseille 5
Nuremberg 5
Ottawa 5
Segrate 5
The Dalles 5
Tokyo 5
Brno 4
Dronten 4
Frankfurt am Main 4
Haikou 4
Istanbul 4
Kunming 4
Lagos 4
London 4
Novi di Modena 4
San Mateo 4
Scandicci 4
Bengaluru 3
Bremen 3
Dallas 3
Falkenstein 3
Hangzhou 3
Hebei 3
Jinan 3
Mirandola 3
Norwalk 3
Phoenix 3
Redwood City 3
Reggio Nell'emilia 3
São Paulo 3
Tianjin 3
Woodbridge 3
Abbiategrasso 2
Abidjan 2
Acqui Terme 2
Alessandria 2
Battipaglia 2
Bratislava 2
Bregnano 2
Campinas 2
Castelfranco Emilia 2
Chicago 2
Colombo 2
Corroios 2
Curitiba 2
Fairfield 2
Ghent 2
Glasgow 2
Grafing 2
Heidelberg 2
Langhirano 2
Lanzhou 2
Legnano 2
Meppel 2
Modena 2
Totale 1.499
Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 171
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 122
Si and Sn doping of ε-Ga2O3 layers 121
Sol-gel growth and characterization of In2O3 thin films 119
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 114
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 110
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 104
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 102
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 97
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 89
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 86
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 84
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 83
Electrical characterization of a buried GaSb p-n junction controlled by native defects 82
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 80
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time 80
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 77
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 76
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 76
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 73
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 72
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 68
The role of the polyelectrolyte composition in kinetic behaviour of organic memristive device 66
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies 66
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 65
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 52
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 15
Totale 2.350
Categoria #
all - tutte 9.061
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.061


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202012 0 0 0 0 0 0 0 0 0 0 0 12
2020/2021187 3 18 7 8 13 20 9 16 37 34 14 8
2021/2022148 12 13 0 5 16 5 19 13 12 15 6 32
2022/2023602 84 78 44 51 41 58 7 48 158 6 23 4
2023/2024247 8 18 5 22 14 52 26 18 11 14 16 43
2024/2025854 13 30 31 77 89 97 59 85 126 62 68 117
Totale 2.350