VANTAGGIO, Salvatore
 Distribuzione geografica
Continente #
EU - Europa 877
NA - Nord America 822
AS - Asia 523
SA - Sud America 60
AF - Africa 13
Totale 2.295
Nazione #
US - Stati Uniti d'America 803
IT - Italia 241
SG - Singapore 209
CN - Cina 183
IE - Irlanda 135
SE - Svezia 125
FI - Finlandia 86
DE - Germania 71
HK - Hong Kong 65
FR - Francia 55
BR - Brasile 52
NL - Olanda 50
TR - Turchia 25
UA - Ucraina 24
GB - Regno Unito 20
RU - Federazione Russa 19
BE - Belgio 16
CA - Canada 14
IN - India 12
AT - Austria 9
ID - Indonesia 7
JP - Giappone 7
CZ - Repubblica Ceca 6
EC - Ecuador 4
KR - Corea 4
NG - Nigeria 4
PT - Portogallo 4
BD - Bangladesh 3
MA - Marocco 3
MX - Messico 3
RO - Romania 3
TN - Tunisia 3
CI - Costa d'Avorio 2
CO - Colombia 2
IR - Iran 2
LK - Sri Lanka 2
LT - Lituania 2
SK - Slovacchia (Repubblica Slovacca) 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
BG - Bulgaria 1
BO - Bolivia 1
CH - Svizzera 1
DK - Danimarca 1
ES - Italia 1
HN - Honduras 1
HU - Ungheria 1
IQ - Iraq 1
IS - Islanda 1
KE - Kenya 1
LV - Lettonia 1
MC - Monaco 1
NO - Norvegia 1
PA - Panama 1
VE - Venezuela 1
VN - Vietnam 1
Totale 2.295
Città #
Chandler 146
Dublin 135
Singapore 121
Ann Arbor 110
Santa Clara 99
Parma 98
Hong Kong 63
Ashburn 50
Shanghai 47
Strasbourg 42
Beijing 38
Boardman 36
Jacksonville 36
Munich 27
Dearborn 24
Helsinki 22
Nanjing 21
Princeton 21
Brussels 14
Izmir 14
Los Angeles 13
Turku 13
Wilmington 11
Guangzhou 9
Moscow 9
New York 9
Bologna 8
Milan 8
Rome 8
Shenyang 8
Hefei 7
Jakarta 7
Kocaeli 7
Seattle 7
Toronto 7
Vienna 7
Des Moines 6
Houston 6
Mumbai 6
Nanchang 6
Amsterdam 5
Berlin 5
Brooklyn 5
Civitavecchia 5
Fremont 5
Marseille 5
Nuremberg 5
Ottawa 5
Segrate 5
The Dalles 5
Tokyo 5
Brno 4
Columbus 4
Dronten 4
Frankfurt am Main 4
Haikou 4
Istanbul 4
Kunming 4
Lagos 4
London 4
Novi di Modena 4
San Mateo 4
Scandicci 4
Seoul 4
Bengaluru 3
Bremen 3
Dallas 3
Falkenstein 3
Hangzhou 3
Hebei 3
Jinan 3
Mirandola 3
Norwalk 3
Phoenix 3
Redwood City 3
Reggio Nell'emilia 3
São Paulo 3
Tianjin 3
Woodbridge 3
Abbiategrasso 2
Abidjan 2
Acqui Terme 2
Alessandria 2
Battipaglia 2
Bratislava 2
Bregnano 2
Campinas 2
Castelfranco Emilia 2
Chicago 2
Colombo 2
Corroios 2
Curitiba 2
Fairfield 2
Ghent 2
Glasgow 2
Grafing 2
Heidelberg 2
Langhirano 2
Lanzhou 2
Legnano 2
Totale 1.520
Nome #
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism 174
n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion 125
Si and Sn doping of ε-Ga2O3 layers 122
Sol-gel growth and characterization of In2O3 thin films 120
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers 115
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 112
Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics 109
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 105
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 97
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 89
Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers 88
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect 86
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 85
Electrical characterization of a buried GaSb p-n junction controlled by native defects 83
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 80
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time 80
Al+ ion implanted on-axis <0001> semi-insulating 4H-SiC 77
Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts 76
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time 76
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 74
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 73
Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers 70
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies 67
The role of the polyelectrolyte composition in kinetic behaviour of organic memristive device 66
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 66
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 56
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 17
Totale 2.388
Categoria #
all - tutte 9.298
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.298


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021187 3 18 7 8 13 20 9 16 37 34 14 8
2021/2022148 12 13 0 5 16 5 19 13 12 15 6 32
2022/2023602 84 78 44 51 41 58 7 48 158 6 23 4
2023/2024247 8 18 5 22 14 52 26 18 11 14 16 43
2024/2025867 13 30 31 77 89 97 59 85 126 62 68 130
2025/202625 25 0 0 0 0 0 0 0 0 0 0 0
Totale 2.388