Sfoglia per Autore
STORAGE TESTS AND FAILURE ANALYSES ON ALGAAS/GAAS HEMTS
1992-01-01 Arduino, E.; Comitangelo, R.; Conti, P.; Gallo, G.; DE MUNARI, Ilaria
Limitations in NIST Test-Structures When Used for Electromigration Tests of Bamboo Metal Lines
1993-01-01 G. L., Baldini; DE MUNARI, Ilaria; A., Scorzoni; F., Tamarri; C., Caprile; F., Fantini
ASTM Standard Structures for Electromigration Applied to Narrow Al/TiN/Ti Lines: Drawbacks and New Proposal
1993-01-01 DE MUNARI, Ilaria; G. L., Baldini; A., Scorzoni; F., Tamarri; M., Vanzi; F., Fantini
Test di elettromigrazione su strisce di tipo bamboo: limiti delle strutture di test progettate secondo le regole NIST
1993-01-01 DE MUNARI, Ilaria; F., Fantini; Cova, Paolo; A., Scorzoni; G. L., Baldini
A Test Pattern For Three-Dimensional Latch-up Analysis
1993-01-01 DE MUNARI, Ilaria; Menozzi, Roberto; M., Davoli; F., Fantini
Electromigration in Thin-Films for Microelectronics
1993-01-01 G. L., Baldini; DE MUNARI, Ilaria; A., Scorzoni; F., Fantini
Design and Simulation of a Test Pattern for Three-Dimensional Latch-up Analysis
1993-01-01 DE MUNARI, Ilaria; Menozzi, Roberto; F., Fantini
Drawbacks to Using NIST Electromigration Test-Structures to Test Bamboo Metal Lines
1994-01-01 DE MUNARI, Ilaria; A., Scorzoni; F., Tamarri; D., Govoni; F., Corticelli; F., Fantini
Activation Energy of the Early Stages of Electromigration in Al-1%/Si/TiN/Ti Bamboo Lines
1994-01-01 DE MUNARI, Ilaria; A., Scorzoni; F., Tamarri; F., Fantini
Non-Destructive Electrical Techniques as Means for Understanding the Basic Mechanisms of Electromigration
1994-01-01 A., Scorzoni; DE MUNARI, Ilaria; H., Stulens
Thermal Stability of Al/Ni gate AlGaAs/GaAs HEMT’s
1995-01-01 DE MUNARI, Ilaria; F., Fantini; P., Conti
On the ASTM Electromigration Test Structure Applied to Al-1%Si/TiN/Ti Bamboo Metal Lines
1995-01-01 DE MUNARI, Ilaria; M., Vanzi; A., Scorzoni; F., Fantini
Influence of Thermal-Mechanical Effects on Resistance Changes During and After Electromigration Experiments
1995-01-01 A., Scorzoni; DE MUNARI, Ilaria; H., Stulens; V., D'Haeger
Activation Energy in the Early Stage of Electromigration in Al-1%Si/TiNTi Bamboo Lines
1995-01-01 DE MUNARI, Ilaria; A., Scorzoni; F., Tamarri; F., Fantini
Design of a Test-Structure to Evaluate Electro-Thermomigration in Power ICs
1996-01-01 DE MUNARI, Ilaria; F., Speroni; M., Reverberi; C., Neva; L., Lonzi; F., Fantini
Electrical and Thermal Local Effects Simulation for Electromigration
1996-01-01 M., Borgarino; A., Castagnini; DE MUNARI, Ilaria; F., Fantini
Non-Linear Resistance Behaviour in the Early Stages and After Electromigration in Al-Si Lines
1996-01-01 A., Scorzoni; DE MUNARI, Ilaria; H., Stulens; V., D'Haeger
Resistance Changes due to Cu Transport and Precipitation During Electromigration in Submicrometric Al-0.5%Cu Lines
1996-01-01 A., Scorzoni; DE MUNARI, Ilaria; R., Balboni; F., Tamarri; A., Garulli; F., Fantini
Test Structures for Electromigration Evaluation in Submicron Technology
1996-01-01 S., Morgan; DE MUNARI, Ilaria; A., Scorzoni; F., Fantini; G., Magri; C., Zaccherini; C., Caprile
Are High Resolution Resistometric Methods Really Useful for the Early Detection of Electromigration Damage
1997-01-01 A., Scorzoni; S., Franceschini; R., Balboni; M., Impronta; DE MUNARI, Ilaria; F., Fantini
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