Sfoglia per Autore
Anomalous overvoltage oscillations in the reverse recovery of power p-i-n diodes: experiments and simulations
1999-01-01 Cova, Paolo; Menozzi, Roberto; M., Pasqualetti; M., Portesine; R., Scicolone; B., Zerbinati
Off-State Breakdown in GaAs Power HFETs
1999-01-01 Cova, Paolo; Menozzi, Roberto; D., Dieci; C., Canali; Pavesi, Maura; G., Meneghesso
Three-terminal off-state breakdown in AlGaAs/GaAs power HFETs: a temperature-dependent analysis of the gate reverse current
1999-01-01 D., Dieci; Cova, Paolo; Menozzi, Roberto; C., Lanzieri; G., Meneghesso; C., Canali
The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs
1999-01-01 Menozzi, Roberto; D., Dieci; Sozzi, Giovanna; T., Tomasi; C., Lanzieri
Reliability testing of InP HEMT's using electrical stress methods
1999-01-01 VAN DER ZANDEN, K.; Schreurs, D.; Menozzi, Roberto; Borgarino, M.
On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's
1999-01-01 Menozzi, Roberto; Borgarino, M.; VAN DER ZANDEN, K.; Schreurs, D.
Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions
1999-01-01 Dieci, D.; Sozzi, Giovanna; Menozzi, Roberto; Lanzieri, C.; Cetronio, A.; Canali, C.
Interactions between DX centers and hot electrons and holes in AlGaAs/GaAs heterostructure field-effect transistors
1999-01-01 D., Dieci; C., Canali; Menozzi, Roberto; Pavesi, Maura; A., Cetronio
Breakdown and high-field reliability issues in heterojunction FETs for microwave power amplification
2000-01-01 Menozzi, Roberto
Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help?
2000-01-01 Menozzi, Roberto; Sozzi, Giovanna; E., Tediosi; D., Dieci; C., Lanzieri; C., Canali
Breakdown and degradation issues and the choice of a safe load line for power HFET operation
2000-01-01 D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali
Hot electron effects on AlGaAs/GaAs power HFET's under off-state and on-state electrical stress conditions
2000-01-01 Dieci, D.; Menozzi, Roberto; Lanzieri, C.; Polenta, L.; Canali, C.
Stepping toward standard methods of small-signal parameter extraction fro HBT's
2000-01-01 M., Sotoodeh; L., Sozzi; A., Vinay; A. H., Khalid; Z., Hu; A., Rezazadeh; Menozzi, Roberto
Comprehensive hot electron assessment of Ku-band AlGaAs/GaAs power HFETs: electrical characterization, accelerated stress, and simulation
2000-01-01 D., Dieci; Menozzi, Roberto; T., Tomasi; Sozzi, Giovanna; C., Lanzieri; C., Canali
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's
2000-01-01 Busani, M.; Menozzi, Roberto; Borgarino, M.; Fantini, F.
Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices
2000-01-01 Zanoni, E.; Meneghesso, G.; Menozzi, Roberto
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design
2001-01-01 Menozzi, Roberto; Sozzi, Giovanna; Verzellesi, Giovanni; Borgarino, Mattia; Lanzieri, Claudio; Canali, Claudio
Numerical investigation of high-field degradation of power HFETs
2001-01-01 Menozzi, Roberto; Sozzi, Giovanna
Experimental/numerical investigation of the physical mechanisms behind high-filed degradation of power HFETs and their implications on device design
2001-01-01 Menozzi, Roberto; Sozzi, Giovanna; G., Verzellesi; M., Borgarino; C., Lanzieri; C., Canali
Surface-related kink effect in AlGaAs/GaAs power HFETs
2001-01-01 E., Tediosi; G., Verzellesi; C., Canali; Sozzi, Giovanna; Menozzi, Roberto; C., Lanzieri
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