IRIS
MAZZOLINI, PIERO
 Distribuzione geografica
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Continente #
NA - Nord America 1.691
AS - Asia 1.440
EU - Europa 1.036
SA - Sud America 325
AF - Africa 84
OC - Oceania 2
Totale 4.578
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Nazione #
US - Stati Uniti d'America 1.652
SG - Singapore 667
CN - Cina 317
IT - Italia 316
BR - Brasile 272
IE - Irlanda 177
HK - Hong Kong 154
SE - Svezia 110
VN - Vietnam 109
DE - Germania 108
NL - Olanda 87
RU - Federazione Russa 59
ZA - Sudafrica 55
IN - India 52
AT - Austria 29
FR - Francia 26
FI - Finlandia 24
GB - Regno Unito 24
ID - Indonesia 24
AR - Argentina 21
KR - Corea 20
PL - Polonia 18
BE - Belgio 17
CA - Canada 17
TR - Turchia 17
BD - Bangladesh 16
MX - Messico 13
JP - Giappone 10
UA - Ucraina 10
ES - Italia 8
CH - Svizzera 7
EC - Ecuador 7
MA - Marocco 7
PK - Pakistan 7
IQ - Iraq 6
KE - Kenya 6
CL - Cile 5
CO - Colombia 5
JO - Giordania 5
AZ - Azerbaigian 4
PY - Paraguay 4
TN - Tunisia 4
TW - Taiwan 4
UZ - Uzbekistan 4
VE - Venezuela 4
BY - Bielorussia 3
LT - Lituania 3
PA - Panama 3
PE - Perù 3
BO - Bolivia 2
DZ - Algeria 2
HU - Ungheria 2
LK - Sri Lanka 2
MY - Malesia 2
NP - Nepal 2
PR - Porto Rico 2
QA - Qatar 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
TM - Turkmenistan 2
UY - Uruguay 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AU - Australia 1
BF - Burkina Faso 1
BG - Bulgaria 1
BH - Bahrain 1
CG - Congo 1
CI - Costa d'Avorio 1
CM - Camerun 1
CV - Capo Verde 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
EG - Egitto 1
GR - Grecia 1
IL - Israele 1
JM - Giamaica 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LU - Lussemburgo 1
LY - Libia 1
NG - Nigeria 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
PH - Filippine 1
PT - Portogallo 1
RS - Serbia 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TG - Togo 1
TL - Timor Orientale 1
TT - Trinidad e Tobago 1
Totale 4.578
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Città #
Singapore 383
Ashburn 325
Dallas 253
Santa Clara 174
Dublin 173
Chandler 160
Hong Kong 152
Parma 119
Boardman 86
Beijing 84
Ann Arbor 62
Johannesburg 52
Munich 50
Hefei 46
Los Angeles 38
Ho Chi Minh City 36
Shanghai 33
Milan 31
Princeton 27
Berlin 26
Hanoi 26
São Paulo 25
Columbus 23
New York 22
Vienna 20
Jakarta 19
Moscow 16
Pune 16
Seoul 16
Rome 14
San Jose 14
The Dalles 14
Turku 14
Wilmington 14
Brooklyn 13
Brussels 13
Des Moines 13
Rio de Janeiro 13
Warsaw 13
Curitiba 11
Dong Ket 10
Helsinki 10
Istanbul 10
Nuremberg 10
Bologna 9
Chennai 9
Council Bluffs 9
Guangzhou 9
Orem 9
Ardea 8
Buffalo 8
Shenzhen 8
Stockholm 8
Woodbridge 8
Amsterdam 7
Atlanta 7
Bengaluru 7
Marseille 7
Modena 7
Reggio Emilia 7
Belo Horizonte 6
Chicago 6
Fairfield 6
Houston 6
London 6
Mumbai 6
Nairobi 6
Phoenix 6
San Francisco 6
Tokyo 6
Amman 5
Baghdad 5
Boston 5
Denver 5
Guarulhos 5
Haiphong 5
Manchester 5
St Petersburg 5
Strasbourg 5
Baku 4
Brasília 4
Changsha 4
Dolianova 4
Frankfurt am Main 4
Gatchina 4
Ha Long 4
Menlo Park 4
Meppel 4
Montreal 4
New Delhi 4
Piacenza 4
Salvador 4
Santo André 4
Scandicci 4
Seattle 4
Thái Bình 4
Tianjin 4
Toronto 4
Uberlândia 4
Zurich 4
Totale 2.995
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Nome #
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films 194
Influence of Polymorphism on the Electronic Structure of Ga2O3 160
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 157
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 143
Isotopic study of Raman active phonon modes in β-Ga2O3 141
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 137
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains 125
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 124
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 118
Ga2O3 polymorphs: Tailoring the epitaxial growth conditions 117
Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes 114
Non‐Equilibrium Synthesis of Highly Active Nanostructured, Oxygen‐Incorporated Amorphous Molybdenum Sulfide HER Electrocatalyst 114
Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O 113
Multi-layered hierarchical nanostructures for transparent monolithic dye-sensitized solar cell architectures 106
Electrochemical Properties of Transparent Conducting Films of Tantalum-Doped Titanium Dioxide 105
Effect of lithium diffusion into Ga2O3 thin films 104
Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode 102
Hierarchical TiN Nanostructured Thin Film Electrode for Highly Stable PEM Fuel Cells 102
Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy 100
Hydrogen-treated hierarchical titanium oxide nanostructures for photoelectrochemical water splitting 96
In situ TEM study of phase transformation in oxide semiconductors 95
Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection 93
Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy 93
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 88
Morphology-driven electrical and optical properties in graded hierarchical transparent conducting Al:ZnO 87
Towards smooth (010) β-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: the impact of substrate offcut and metal-to-oxygen flux ratio 86
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 84
Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor 84
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001) 83
Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) 83
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3 81
SnO/β-Ga2O3 vertical pn heterojunction diodes 81
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 78
Controlling the Electrical Properties of Undoped and Ta-doped TiO2 Polycrystalline Films via Ultra-Fast Annealing Treatments 78
Plasma-Assisted Molecular Beam Epitaxy 2 77
Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass 74
Phase-selective growth of κ- vs β-Ga2O3 and (InxGa1−x)2O3 by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy 72
Disorder–Order Transition in Ga2O3 and Its Solid Solution with In2O3 upon Thermal Annealing 70
Tuning the photoelectrochemical properties of hierarchical TiO2 nanostructures by control of pulsed laser deposition and annealing in reducing conditions 70
Enhancing Light Harvesting by Hierarchical Functionally Graded Transparent Conducting Al-doped ZnO Nano- and Mesoarchitectures 69
Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (2¯01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) 69
Molecular Beam Epitaxy of β-(InxGa1–x)2O3 on β-Ga2O3 (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement 68
Vibrational - Electrical Properties Relationship in Donor Doped TiO2 by Raman Spectroscopy 65
Electronic structure and surface band bending of Sn-doped β-Ga2 O3 thin films studied by x-ray photoemission spectroscopy and ab initio calculations 62
Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β-Ga2O3 61
Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3 60
Tuning electrical properties of hierarchically assembled Al-doped ZnO nanoforests by room temperature Pulsed Laser Deposition 57
Tuning of Electrical and Optical Properties of Highly Conducting and Transparent Ta-Doped TiO2 Polycrystalline Films 55
Tackling Disorder in γ-Ga2 O3 55
Carrier Concentration–Dependent Seebeck Coefficient in β‐Ga2O3 49
Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga 2 O 3 on Al 2 O 3 (0001) and GaN (0001) Substrates 22
Coupled experimental and TCAD analysis of NiO/Ga2O3 photodiodes for UV-C detection applications 9
Totale 4.730
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Categoria #
all - tutte 17.169
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.169
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021121 0 0 0 0 0 22 44 1 22 8 8 16
2021/2022155 2 21 5 7 16 4 6 9 13 1 2 69
2022/2023618 59 74 50 40 35 70 17 30 206 3 22 12
2023/2024351 19 24 6 19 20 58 36 24 28 24 15 78
2024/20251.451 22 52 63 92 159 155 178 136 123 119 117 235
2025/20261.967 331 304 470 279 456 127 0 0 0 0 0 0
Totale 4.730