IRIS
MAZZOLINI, PIERO
 Distribuzione geografica
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Continente #
NA - Nord America 643
EU - Europa 537
AS - Asia 190
AF - Africa 3
SA - Sud America 1
Totale 1.374
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Nazione #
US - Stati Uniti d'America 641
IE - Irlanda 170
IT - Italia 137
SE - Svezia 102
SG - Singapore 74
CN - Cina 65
DE - Germania 34
IN - India 22
NL - Olanda 17
BE - Belgio 15
RU - Federazione Russa 14
FR - Francia 13
FI - Finlandia 10
VN - Vietnam 10
CH - Svizzera 7
AT - Austria 6
GB - Regno Unito 5
TR - Turchia 5
TW - Taiwan 4
UA - Ucraina 3
CA - Canada 2
JP - Giappone 2
KR - Corea 2
MA - Marocco 2
PL - Polonia 2
TM - Turkmenistan 2
AM - Armenia 1
BD - Bangladesh 1
BR - Brasile 1
CI - Costa d'Avorio 1
CZ - Repubblica Ceca 1
HK - Hong Kong 1
IL - Israele 1
PT - Portogallo 1
Totale 1.374
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Città #
Dublin 166
Chandler 160
Ann Arbor 62
Boardman 62
Ashburn 56
Singapore 55
Parma 34
Shanghai 28
Princeton 27
Milan 25
Pune 16
Berlin 15
Wilmington 14
Des Moines 12
Brussels 11
Dong Ket 10
Helsinki 10
Ardea 8
Beijing 8
Shenzhen 8
Woodbridge 8
Fairfield 6
Marseille 6
Santa Clara 6
Bologna 5
Guangzhou 5
St Petersburg 5
Strasbourg 5
Vienna 5
Chicago 4
Dallas 4
Los Angeles 4
Menlo Park 4
Meppel 4
New York 4
Piacenza 4
Reggio Emilia 4
Seattle 4
Zurich 4
Gatchina 3
Kocaeli 3
Modena 3
Nanjing 3
Nizhniy Novgorod 3
Rome 3
Taichung 3
Viadana 3
Ashgabat 2
Borås 2
Bremen 2
Cambridge 2
Casina 2
Cremona 2
Dziecinow 2
Edinburgh 2
Flero 2
Ghent 2
Glasgow 2
Gorgonzola 2
Houston 2
Indore 2
Istanbul 2
Jacksonville 2
Jinju 2
Kilchberg 2
Legnano 2
Munich 2
New Delhi 2
Santa Maria A Vico 2
Savona 2
Vanzago 2
Abidjan 1
Arcene 1
Basel 1
Bouskoura 1
Brno 1
Casablanca 1
Caserta 1
Castel Goffredo 1
Central 1
Corroios 1
Crotone 1
Fayetteville 1
Fremont 1
Fuzhou 1
Grafing 1
Hangzhou 1
Hebei 1
Huskvarna 1
Jinan 1
Karlsruhe 1
Laveno-Mombello 1
Leawood 1
Oberhausen 1
Redmond 1
Rio de Janeiro 1
Robecco Pavese 1
Sacramento 1
Saint Clair Shores 1
Spencer 1
Totale 979
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Nome #
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry 81
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction 80
Isotopic study of Raman active phonon modes in β-Ga2O3 79
Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains 65
Ga2O3 polymorphs: Tailoring the epitaxial growth conditions 61
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga2O3 by Metal–Organic Vapor Phase Epitaxy 61
Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O 59
Multi-layered hierarchical nanostructures for transparent monolithic dye-sensitized solar cell architectures 58
Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor 54
Influence of Polymorphism on the Electronic Structure of Ga2O3 53
Electrochemical Properties of Transparent Conducting Films of Tantalum-Doped Titanium Dioxide 51
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 44
Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy 42
SnO/β-Ga2O3 vertical pn heterojunction diodes 42
Non‐Equilibrium Synthesis of Highly Active Nanostructured, Oxygen‐Incorporated Amorphous Molybdenum Sulfide HER Electrocatalyst 42
Hierarchical TiN Nanostructured Thin Film Electrode for Highly Stable PEM Fuel Cells 40
Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) 40
Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass 40
Morphology-driven electrical and optical properties in graded hierarchical transparent conducting Al:ZnO 39
Plasma-Assisted Molecular Beam Epitaxy 2 38
Controlling the Electrical Properties of Undoped and Ta-doped TiO2 Polycrystalline Films via Ultra-Fast Annealing Treatments 34
Tuning the photoelectrochemical properties of hierarchical TiO2 nanostructures by control of pulsed laser deposition and annealing in reducing conditions 34
Towards smooth (010) β-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: the impact of substrate offcut and metal-to-oxygen flux ratio 33
Enhancing Light Harvesting by Hierarchical Functionally Graded Transparent Conducting Al-doped ZnO Nano- and Mesoarchitectures 31
Hydrogen-treated hierarchical titanium oxide nanostructures for photoelectrochemical water splitting 31
Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (2¯01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) 28
Vibrational - Electrical Properties Relationship in Donor Doped TiO2 by Raman Spectroscopy 26
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001) 25
Disorder–Order Transition in Ga2O3 and Its Solid Solution with In2O3 upon Thermal Annealing 20
Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β-Ga2O3 20
Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3 18
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments 17
Tuning of Electrical and Optical Properties of Highly Conducting and Transparent Ta-Doped TiO2 Polycrystalline Films 16
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films 14
Tackling Disorder in γ-Ga2 O3 14
Tuning electrical properties of hierarchically assembled Al-doped ZnO nanoforests by room temperature Pulsed Laser Deposition 12
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption 10
Molecular Beam Epitaxy of β-(InxGa1–x)2O3 on β-Ga2O3 (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement 9
Electronic structure and surface band bending of Sn-doped β-Ga2 O3 thin films studied by x-ray photoemission spectroscopy and ab initio calculations 1
Totale 1.462
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Categoria #
all - tutte 7.305
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.305
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021188 0 0 42 17 8 22 44 1 22 8 8 16
2021/2022155 2 21 5 7 16 4 6 9 13 1 2 69
2022/2023618 59 74 50 40 35 70 17 30 206 3 22 12
2023/2024351 19 24 6 19 20 58 36 24 28 24 15 78
2024/2025150 22 52 63 13 0 0 0 0 0 0 0 0
Totale 1.462