We here present an experimental study on (010)-oriented β-Ga2O3 thin films homoepitaxially grown by plasma assisted molecular beam epitaxy. We study the effect of substrate treatments (i.e., O-plasma and Ga-etching) and several deposition parameters (i.e., growth temperature and metal-to-oxygen flux ratio) on the resulting Ga2O3 surface morphology and growth rate. In situ and ex-situ characterizations identified the formation of (110) and (1⎯⎯10)-facets on the nominally oriented (010) surface induced by the Ga-etching of the substrate and by several growth conditions, suggesting (110) to be a stable (yet unexplored) substrate orientation. Moreover, we demonstrate how metal-exchange catalysis enabled by an additional In-flux significantly increases the growth rate (>threefold increment) of monoclinic Ga2O3 at high growth temperatures, while maintaining a low surface roughness (rms < 0.5 nm) and preventing the incorporation of In into the deposited layer. This study gives important indications for obtaining device-quality thin films and opens up the possibility to enhance the growth rate in β-Ga2O3 homoepitaxy on different surfaces [e.g., (100) and (001)] via molecular beam epitaxy.

Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy / Mazzolini, P.; Vogt, P.; Schewski, R.; Wouters, C.; Albrecht, M.; Bierwagen, O.. - In: APL MATERIALS. - ISSN 2166-532X. - 7:2(2019), p. 022511. [10.1063/1.5054386]

Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy

Mazzolini, P.
;
2019-01-01

Abstract

We here present an experimental study on (010)-oriented β-Ga2O3 thin films homoepitaxially grown by plasma assisted molecular beam epitaxy. We study the effect of substrate treatments (i.e., O-plasma and Ga-etching) and several deposition parameters (i.e., growth temperature and metal-to-oxygen flux ratio) on the resulting Ga2O3 surface morphology and growth rate. In situ and ex-situ characterizations identified the formation of (110) and (1⎯⎯10)-facets on the nominally oriented (010) surface induced by the Ga-etching of the substrate and by several growth conditions, suggesting (110) to be a stable (yet unexplored) substrate orientation. Moreover, we demonstrate how metal-exchange catalysis enabled by an additional In-flux significantly increases the growth rate (>threefold increment) of monoclinic Ga2O3 at high growth temperatures, while maintaining a low surface roughness (rms < 0.5 nm) and preventing the incorporation of In into the deposited layer. This study gives important indications for obtaining device-quality thin films and opens up the possibility to enhance the growth rate in β-Ga2O3 homoepitaxy on different surfaces [e.g., (100) and (001)] via molecular beam epitaxy.
2019
Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy / Mazzolini, P.; Vogt, P.; Schewski, R.; Wouters, C.; Albrecht, M.; Bierwagen, O.. - In: APL MATERIALS. - ISSN 2166-532X. - 7:2(2019), p. 022511. [10.1063/1.5054386]
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Descrizione: Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2880215
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