Electronic structure and surface band bending of Sn-doped β-Ga2 O3 thin films studied by x-ray photoemission spectroscopy and ab initio calculations / Zhang, J., Yang, Z., Kuang, S., Zhang, Z., Wei, S., Willis, J., Lee, T.L., Mazzolini, P., Bierwagen, O., Chen, S., Chen, Z., Chen, D., Qi, H., Scanlon, D., Zhang, K.H.L.. - In: PHYSICAL REVIEW. B. - ISSN 2469-9950. - 110:11(2024). [10.1103/PhysRevB.110.115120]

Electronic structure and surface band bending of Sn-doped β-Ga2 O3 thin films studied by x-ray photoemission spectroscopy and ab initio calculations

Mazzolini P.;
2024-01-01

2024
Electronic structure and surface band bending of Sn-doped β-Ga2 O3 thin films studied by x-ray photoemission spectroscopy and ab initio calculations / Zhang, J., Yang, Z., Kuang, S., Zhang, Z., Wei, S., Willis, J., Lee, T.L., Mazzolini, P., Bierwagen, O., Chen, S., Chen, Z., Chen, D., Qi, H., Scanlon, D., Zhang, K.H.L.. - In: PHYSICAL REVIEW. B. - ISSN 2469-9950. - 110:11(2024). [10.1103/PhysRevB.110.115120]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/3002633
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