IRIS
MAGNANINI, Renato
 Distribuzione geografica
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Continente #
NA - Nord America 1.494
AS - Asia 1.052
EU - Europa 940
SA - Sud America 199
AF - Africa 60
OC - Oceania 1
Totale 3.746
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Nazione #
US - Stati Uniti d'America 1.448
SG - Singapore 463
CN - Cina 339
FI - Finlandia 186
UA - Ucraina 158
IE - Irlanda 156
BR - Brasile 149
SE - Svezia 138
DE - Germania 113
HK - Hong Kong 102
VN - Vietnam 74
GB - Regno Unito 56
ZA - Sudafrica 47
NL - Olanda 43
CA - Canada 31
AR - Argentina 26
IT - Italia 22
TR - Turchia 17
BE - Belgio 16
IN - India 15
RU - Federazione Russa 14
FR - Francia 11
MX - Messico 11
EC - Ecuador 9
JP - Giappone 8
AT - Austria 6
PL - Polonia 6
CI - Costa d'Avorio 5
IQ - Iraq 5
AZ - Azerbaigian 4
BD - Bangladesh 4
CO - Colombia 4
ES - Italia 4
PY - Paraguay 4
EG - Egitto 3
ID - Indonesia 3
KR - Corea 3
AE - Emirati Arabi Uniti 2
AM - Armenia 2
CZ - Repubblica Ceca 2
GE - Georgia 2
LT - Lituania 2
LV - Lettonia 2
MA - Marocco 2
PE - Perù 2
PK - Pakistan 2
UY - Uruguay 2
UZ - Uzbekistan 2
VE - Venezuela 2
AL - Albania 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
BW - Botswana 1
CL - Cile 1
CR - Costa Rica 1
GT - Guatemala 1
HR - Croazia 1
JM - Giamaica 1
KE - Kenya 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MK - Macedonia 1
PS - Palestinian Territory 1
SA - Arabia Saudita 1
SN - Senegal 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
Totale 3.746
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Città #
Singapore 255
Ashburn 213
Chandler 170
Jacksonville 163
Santa Clara 161
Dublin 156
Hong Kong 102
Beijing 94
Ann Arbor 61
Dearborn 61
Boardman 51
Johannesburg 45
Helsinki 36
Los Angeles 35
Princeton 34
Dallas 32
Ho Chi Minh City 32
Nanjing 31
New York 30
San Mateo 29
Bremen 24
Shenyang 24
Shanghai 23
Toronto 22
Wilmington 22
Hanoi 19
Brussels 16
Parma 16
Kunming 14
Munich 14
Buffalo 13
Jiaxing 12
Jinan 12
Woodbridge 12
Izmir 11
Tianjin 10
Hebei 9
London 9
Manchester 9
Nanchang 9
Stockholm 9
São Paulo 9
Turku 9
Des Moines 8
Hefei 8
Tokyo 8
Auburn Hills 7
Changsha 7
Falkenstein 7
Moscow 7
Council Bluffs 6
Guangzhou 6
Marseille 6
Norwalk 6
Phoenix 6
Vienna 6
Abidjan 5
Brooklyn 5
Chennai 5
Houston 5
Kocaeli 5
Orem 5
Warsaw 5
Baku 4
Columbus 4
Mexico City 4
Redondo Beach 4
Resistencia 4
San Jose 4
Seattle 4
Strasbourg 4
Asunción 3
Borås 3
Boston 3
Buenos Aires 3
Chicago 3
Cuiabá 3
Denver 3
Escanaba 3
Fortaleza 3
Fuzhou 3
Haiphong 3
Hangzhou 3
Marília 3
Montreal 3
Poplar 3
Querétaro 3
Recife 3
San Francisco 3
Amsterdam 2
Atlanta 2
Belo Horizonte 2
Biên Hòa 2
Bogotá 2
Bắc Ninh 2
Campinas 2
Casablanca 2
Catanduva 2
Chengdu 2
Formosa 2
Totale 2.349
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Nome #
Composition control of GaSbAs alloys 166
Interband optical properties of molecular-beam epitaxially grown GaAs1-xSbx on GaAs substrates 159
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 148
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 141
Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit 133
Assessment of Vegard’s law validity in the Ga1-xAlxSb/GaSb epitaxial system 130
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb 128
Optical study of Al0.4Ga0.6Sb/GaSb single quantum wells 125
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 124
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 123
High-resolution x-ray diffraction, x-ray standing-wave, and transmission electron microscopy study of Sb-based single quantum well structures 120
Influence of As incorporation on the deviation from Vegard’s law in the Ga1-xAlxSb/GaSb system 119
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 117
A shallow state coexisting with the DX center in Te-doped AlGaSb 117
Metal-insulator transition induced by the magnetic field in n-type GaSb, 112
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 109
Investigation of GaAs/InGaP superlattices for quantum well solar cells 107
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb 106
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 104
Concentration dependence of optical absorption in Tellurium doped GaSb 100
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 96
Thermoreflectance study of direct optical gap in epitaxial AlxGa1-xSb 96
“ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GAAS-BASED P-I-N STRUCTURE, GROWN AT LOW TEMPERATURE BY MOVPE, USING TBAS, FOR PHOTOVOLTAIC APPLICATIONS”, 94
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 93
Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system 92
Optical absorption near the fundamental absorption edge in GaSb 89
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 88
In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells 83
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 80
Preparation by MBE and study of GaSb-based structures 80
Negative magnetoresistance effects in metallic n-type GaSb 77
Occupancy level of the DX center in Te-doped AlxGa1-xSb 74
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 71
Study of the lattice strain relaxation in the AlxGa1-xSb /GaSb system by X-ray topography and high resolution diffraction 70
Non-linear electric field effects in the magnetoresistence of ntyoe GaSb. 67
GROWTH OF INP AND GAAS CRYSTALS BY LIQUID ENCAPSULATED VERTICAL FREEZING IN OPEN AMPOULE 49
Totale 3.787
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Categoria #
all - tutte 13.344
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.344
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021145 0 0 0 0 0 0 37 1 57 12 38 0
2021/2022155 4 1 1 6 3 1 24 32 10 12 12 49
2022/2023597 67 71 34 35 72 70 2 39 184 1 16 6
2023/2024170 16 18 3 6 20 45 10 6 9 8 12 17
2024/2025761 11 41 47 34 66 160 7 16 80 72 57 170
2025/20261.088 175 128 161 248 281 95 0 0 0 0 0 0
Totale 3.787