IRIS
MAGNANINI, Renato
 Distribuzione geografica
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Continente #
NA - Nord America 919
EU - Europa 762
AS - Asia 303
AF - Africa 9
SA - Sud America 1
Totale 1.994
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Nazione #
US - Stati Uniti d'America 898
CN - Cina 232
UA - Ucraina 156
IE - Irlanda 155
FI - Finlandia 149
SE - Svezia 129
DE - Germania 92
SG - Singapore 53
GB - Regno Unito 27
CA - Canada 21
IT - Italia 19
TR - Turchia 16
BE - Belgio 15
RU - Federazione Russa 7
AT - Austria 6
CI - Costa d'Avorio 5
FR - Francia 4
ZA - Sudafrica 4
IN - India 2
NL - Olanda 2
CO - Colombia 1
ES - Italia 1
Totale 1.994
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Città #
Chandler 170
Jacksonville 163
Dublin 155
Ann Arbor 61
Dearborn 61
Beijing 46
Boardman 45
Singapore 40
Ashburn 38
Princeton 34
Nanjing 31
San Mateo 29
Bremen 24
Shenyang 24
Shanghai 23
Wilmington 22
Toronto 19
New York 16
Parma 16
Brussels 15
Kunming 14
Jiaxing 12
Jinan 12
Woodbridge 12
Izmir 11
Santa Clara 10
Hebei 9
Nanchang 9
Tianjin 9
Des Moines 8
Hefei 8
Helsinki 8
Auburn Hills 7
Norwalk 6
Vienna 6
Abidjan 5
Changsha 5
Kocaeli 5
Guangzhou 4
Johannesburg 4
Los Angeles 4
Seattle 4
Strasbourg 4
Borås 3
Escanaba 3
Fuzhou 3
Houston 3
Chengdu 2
Dallas 2
Hangzhou 2
Jinhua 2
Moscow 2
Pune 2
St Petersburg 2
Taizhou 2
Bogotá 1
Chongqing 1
Düsseldorf 1
Fremont 1
Gatchina 1
Haikou 1
Leawood 1
Madrid 1
Milan 1
Mountain View 1
Ningbo 1
Phoenix 1
Ravenna 1
Saint Petersburg 1
Taiyuan 1
Wuhan 1
Yekaterinburg 1
Yorkton 1
Totale 1.254
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Nome #
Interband optical properties of molecular-beam epitaxially grown GaAs1-xSbx on GaAs substrates 95
Composition control of GaSbAs alloys 94
Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit 90
Metal-insulator transition induced by the magnetic field in n-type GaSb, 81
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 73
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 72
Optical study of Al0.4Ga0.6Sb/GaSb single quantum wells 70
Thermoreflectance study of direct optical gap in epitaxial AlxGa1-xSb 69
Influence of As incorporation on the deviation from Vegard’s law in the Ga1-xAlxSb/GaSb system 66
Assessment of Vegard’s law validity in the Ga1-xAlxSb/GaSb epitaxial system 66
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 65
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 62
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb 61
“ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GAAS-BASED P-I-N STRUCTURE, GROWN AT LOW TEMPERATURE BY MOVPE, USING TBAS, FOR PHOTOVOLTAIC APPLICATIONS”, 60
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 60
Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system 60
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 58
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 56
Investigation of GaAs/InGaP superlattices for quantum well solar cells 55
A shallow state coexisting with the DX center in Te-doped AlGaSb 55
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 55
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 53
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb 53
Concentration dependence of optical absorption in Tellurium doped GaSb 53
High-resolution x-ray diffraction, x-ray standing-wave, and transmission electron microscopy study of Sb-based single quantum well structures 50
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 50
Preparation by MBE and study of GaSb-based structures 49
Optical absorption near the fundamental absorption edge in GaSb 48
Study of the lattice strain relaxation in the AlxGa1-xSb /GaSb system by X-ray topography and high resolution diffraction 46
Occupancy level of the DX center in Te-doped AlxGa1-xSb 45
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 44
In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells 41
Negative magnetoresistance effects in metallic n-type GaSb 38
Non-linear electric field effects in the magnetoresistence of ntyoe GaSb. 33
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 8
Totale 2.034
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Categoria #
all - tutte 7.614
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.614
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020307 0 0 37 8 39 48 49 7 51 20 14 34
2020/2021246 2 35 31 2 31 0 37 1 57 12 38 0
2021/2022155 4 1 1 6 3 1 24 32 10 12 12 49
2022/2023597 67 71 34 35 72 70 2 39 184 1 16 6
2023/2024170 16 18 3 6 20 45 10 6 9 8 12 17
2024/202596 11 41 44 0 0 0 0 0 0 0 0 0
Totale 2.034