IRIS
TARRICONE, Luciano
 Distribuzione geografica
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Continente #
NA - Nord America 2.465
AS - Asia 2.221
EU - Europa 1.516
SA - Sud America 319
AF - Africa 98
Continente sconosciuto - Info sul continente non disponibili 1
Totale 6.620
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Nazione #
US - Stati Uniti d'America 2.406
SG - Singapore 833
CN - Cina 725
VN - Vietnam 317
FI - Finlandia 285
IE - Irlanda 254
SE - Svezia 250
UA - Ucraina 246
BR - Brasile 242
DE - Germania 179
HK - Hong Kong 170
ZA - Sudafrica 74
FR - Francia 72
NL - Olanda 68
GB - Regno Unito 54
IT - Italia 43
CA - Canada 42
TR - Turchia 39
AR - Argentina 35
IN - India 34
RU - Federazione Russa 22
BD - Bangladesh 16
BE - Belgio 14
IQ - Iraq 13
EC - Ecuador 12
MX - Messico 11
CO - Colombia 9
PH - Filippine 9
ID - Indonesia 7
JP - Giappone 6
MA - Marocco 6
TH - Thailandia 6
UZ - Uzbekistan 6
EG - Egitto 5
ES - Italia 5
KR - Corea 5
PK - Pakistan 5
PL - Polonia 5
UY - Uruguay 5
VE - Venezuela 5
AZ - Azerbaigian 4
CL - Cile 4
LB - Libano 4
SA - Arabia Saudita 4
AT - Austria 3
CI - Costa d'Avorio 3
CZ - Repubblica Ceca 3
KE - Kenya 3
KZ - Kazakistan 3
MY - Malesia 3
PT - Portogallo 3
PY - Paraguay 3
TN - Tunisia 3
BA - Bosnia-Erzegovina 2
DZ - Algeria 2
KG - Kirghizistan 2
LT - Lituania 2
LV - Lettonia 2
PE - Perù 2
QA - Qatar 2
AE - Emirati Arabi Uniti 1
BG - Bulgaria 1
BH - Bahrain 1
BO - Bolivia 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
EU - Europa 1
GE - Georgia 1
GT - Guatemala 1
GY - Guiana 1
JO - Giordania 1
KW - Kuwait 1
MK - Macedonia 1
MN - Mongolia 1
OM - Oman 1
PA - Panama 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TC - Turks e Caicos 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
Totale 6.620
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Città #
Singapore 403
Ashburn 302
Jacksonville 282
Santa Clara 264
Chandler 263
Dublin 254
Beijing 228
San Jose 186
Hong Kong 165
Ho Chi Minh City 114
Boardman 82
Dearborn 74
Johannesburg 70
Hanoi 68
Nanjing 66
Ann Arbor 62
Helsinki 61
Princeton 59
New York 57
Dallas 51
Lauterbourg 51
San Mateo 51
Shanghai 43
Los Angeles 40
Shenyang 39
Wilmington 39
Toronto 32
Izmir 24
Kunming 24
Munich 24
Nanchang 24
Parma 23
Hebei 22
Jinan 22
Buffalo 20
Hefei 18
Des Moines 17
Woodbridge 16
Bremen 15
Falkenstein 15
Jiaxing 15
São Paulo 15
Brussels 14
Haiphong 13
Tianjin 13
London 12
Changsha 11
Da Nang 11
Marseille 11
Moscow 11
Turku 10
Brooklyn 9
Council Bluffs 9
Norwalk 9
Chennai 8
Strasbourg 8
Belo Horizonte 7
Guangzhou 7
Hangzhou 7
Houston 7
Baghdad 6
Biên Hòa 6
Denver 6
Hải Dương 6
Manchester 6
Orem 6
Resistencia 6
Rio de Janeiro 6
Seattle 6
Stockholm 6
Tashkent 6
Borås 5
Boston 5
Buenos Aires 5
Curitiba 5
Kensington 5
Phoenix 5
Redondo Beach 5
Tokyo 5
Warsaw 5
Ankara 4
Atlanta 4
Baku 4
Can Tho 4
Chicago 4
Columbus 4
Frankfurt am Main 4
Fremont 4
Montevideo 4
New Delhi 4
Ningbo 4
Porto Alegre 4
Quito 4
Zhengzhou 4
Abidjan 3
Americana 3
Aparecida de Goiânia 3
Auburn Hills 3
Betim 3
Birmingham 3
Totale 4.062
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Nome #
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 170
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 168
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 160
ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GaAs-BASED p-i-n STRUCTURE GROWN BY MOVPE 157
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 147
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" 144
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 143
A study of the electrical properties controlled by residual acceptors in gallium antimonide 138
Admittance spectroscopy of GaAs/InGaP MQW structures 136
A shallow state coexisting with the DX center in Te-doped AlGaSb 135
Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation 135
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 130
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 128
"Admittance spectroscopy of InGaP/GaAs MQW structures” 127
CdIn2S2Se2: a new semiconducting compound 126
"Tailoring the depth of the Mn acceptor in InAsP" 123
Investigation of GaAs/InGaP superlattices for quantum well solar cells 121
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 121
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE 118
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 118
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 118
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 117
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 116
Concentration dependence of optical absorption in Tellurium doped GaSb 113
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 113
Photovoltage and photocurrent spectroscopy of p+-i-n+ GaAs/AlGaAs quantum well heterostructures 113
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 110
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation 106
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 106
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 106
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures 106
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells 106
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 105
EXPERIMENTAL EVIDENCE OF DELOCALIZED STATES IN RANDOM DIMER SUPERLATTICES 105
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 105
Electronic structure and vertical transport in random dimer GaAs/AlxGa1-xAs superlattices 104
Is localization universal in low-dimensional disordered matter? 102
Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells 100
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 100
Optical functions from 0.01 to 5 eV of InGaP/GaAs epitaxial layers 97
MOVPE GROWTH AND STUDY OF InP-BASED MATERIALS: OPPORTUNITIES AND CHALLENGES 96
Preparation by MBE and study of GaSb-based structures 96
Structural and Electrical Characterization of Fe Implanted GaInP: Interaction of Fe with Ion Induced Defects and Deep Trap Activation 96
“Local structure of Fe incorporated in GaInP layers by high temperature ion implantation.”. 95
PREPARATION AND CHARACTERIZATION OF Au/InGaP/GaAs SCHOTTKY BARRIERS FOR RADIATION DAMAGE INVESTIGATIONS 95
Optical absorption near the fundamental absorption edge in GaSb 95
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs. 95
Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers 94
Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells 90
Incorporation of active Fe impurities in GaInP by high temperature ion implantation. 89
"Groowth and characterization of manganese-doped InAsP" 89
”GaAs/InGaP MQW’s for high efficiency solar cells” 88
“Spectroscopic characterization of electrical properties of Fe implants ob GaInP/GaAs” 87
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation 86
Occupancy level of the DX center in Te-doped AlxGa1-xSb 85
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 83
“ Electrival and structural characterizatyion of Fe imnplanted InGaP” 81
“Deep level controlling the electrical properties of Fe implanted GaInP/GaAs”. 81
Electrical characterization of GaSb buried p-n junctions 80
Experimental evidence of delocalization in correlated disorder superlattices 80
Totale 6.674
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Categoria #
all - tutte 22.653
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 22.653
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202179 0 0 0 0 0 0 0 0 0 11 67 1
2021/2022256 3 4 0 7 9 4 33 50 18 23 21 84
2022/2023944 103 107 76 54 84 116 6 70 301 1 21 5
2023/2024307 13 34 8 12 18 102 26 16 10 17 19 32
2024/20251.165 10 68 79 60 116 270 2 22 130 116 79 213
2025/20262.355 232 207 265 280 427 157 279 118 254 136 0 0
Totale 6.674