IRIS
TARRICONE, Luciano
 Distribuzione geografica
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Continente #
NA - Nord America 2.526
AS - Asia 2.234
EU - Europa 1.524
SA - Sud America 319
AF - Africa 98
Continente sconosciuto - Info sul continente non disponibili 1
Totale 6.702
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Nazione #
US - Stati Uniti d'America 2.462
SG - Singapore 836
CN - Cina 726
VN - Vietnam 317
FI - Finlandia 285
IE - Irlanda 254
SE - Svezia 250
UA - Ucraina 246
BR - Brasile 242
DE - Germania 179
HK - Hong Kong 170
ZA - Sudafrica 74
FR - Francia 72
NL - Olanda 68
GB - Regno Unito 54
IT - Italia 51
CA - Canada 44
TR - Turchia 39
AR - Argentina 35
IN - India 34
BD - Bangladesh 25
RU - Federazione Russa 22
BE - Belgio 14
IQ - Iraq 13
EC - Ecuador 12
MX - Messico 11
CO - Colombia 9
PH - Filippine 9
ID - Indonesia 7
JP - Giappone 6
MA - Marocco 6
TH - Thailandia 6
UZ - Uzbekistan 6
EG - Egitto 5
ES - Italia 5
KR - Corea 5
PK - Pakistan 5
PL - Polonia 5
UY - Uruguay 5
VE - Venezuela 5
AZ - Azerbaigian 4
CL - Cile 4
LB - Libano 4
SA - Arabia Saudita 4
AT - Austria 3
CI - Costa d'Avorio 3
CZ - Repubblica Ceca 3
KE - Kenya 3
KZ - Kazakistan 3
MY - Malesia 3
PT - Portogallo 3
PY - Paraguay 3
TN - Tunisia 3
BA - Bosnia-Erzegovina 2
CR - Costa Rica 2
DZ - Algeria 2
JM - Giamaica 2
KG - Kirghizistan 2
LT - Lituania 2
LV - Lettonia 2
PE - Perù 2
QA - Qatar 2
AE - Emirati Arabi Uniti 1
BG - Bulgaria 1
BH - Bahrain 1
BO - Bolivia 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
EU - Europa 1
GE - Georgia 1
GT - Guatemala 1
GY - Guiana 1
JO - Giordania 1
KW - Kuwait 1
MK - Macedonia 1
MN - Mongolia 1
OM - Oman 1
PA - Panama 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TC - Turks e Caicos 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
Totale 6.702
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Città #
Singapore 404
Ashburn 306
Jacksonville 282
Santa Clara 264
Chandler 263
Dublin 254
Beijing 229
San Jose 204
Hong Kong 165
Ho Chi Minh City 114
Boardman 82
Dearborn 74
Johannesburg 70
Hanoi 68
Nanjing 66
New York 65
Ann Arbor 62
Helsinki 61
Princeton 59
Dallas 54
Lauterbourg 51
San Mateo 51
Shanghai 43
Los Angeles 42
Shenyang 39
Wilmington 39
Toronto 33
Izmir 24
Kunming 24
Munich 24
Nanchang 24
Parma 23
Hebei 22
Jinan 22
Buffalo 21
Hefei 18
Des Moines 17
Woodbridge 16
Bremen 15
Falkenstein 15
Jiaxing 15
São Paulo 15
Brussels 14
Haiphong 13
Tianjin 13
London 12
Changsha 11
Da Nang 11
Marseille 11
Moscow 11
Turku 10
Brooklyn 9
Council Bluffs 9
Norwalk 9
Chennai 8
Seattle 8
Strasbourg 8
Belo Horizonte 7
Guangzhou 7
Hangzhou 7
Houston 7
Baghdad 6
Biên Hòa 6
Denver 6
Hải Dương 6
Manchester 6
Orem 6
Resistencia 6
Rio de Janeiro 6
Stockholm 6
Tashkent 6
Bologna 5
Borås 5
Boston 5
Buenos Aires 5
Chicago 5
Curitiba 5
Kensington 5
Phoenix 5
Redondo Beach 5
Tokyo 5
Warsaw 5
Ankara 4
Atlanta 4
Baku 4
Can Tho 4
Columbus 4
Frankfurt am Main 4
Fremont 4
Montevideo 4
New Delhi 4
Ningbo 4
Porto Alegre 4
Quito 4
San Francisco 4
Zhengzhou 4
Abidjan 3
Americana 3
Aparecida de Goiânia 3
Auburn Hills 3
Totale 4.107
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Nome #
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 180
ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GaAs-BASED p-i-n STRUCTURE GROWN BY MOVPE 170
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 169
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 160
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" 149
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 148
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 143
A study of the electrical properties controlled by residual acceptors in gallium antimonide 138
Admittance spectroscopy of GaAs/InGaP MQW structures 137
Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation 137
A shallow state coexisting with the DX center in Te-doped AlGaSb 136
"Admittance spectroscopy of InGaP/GaAs MQW structures” 130
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 130
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 129
CdIn2S2Se2: a new semiconducting compound 128
"Tailoring the depth of the Mn acceptor in InAsP" 124
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 123
Investigation of GaAs/InGaP superlattices for quantum well solar cells 122
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 121
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 120
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE 118
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 117
Concentration dependence of optical absorption in Tellurium doped GaSb 116
Photovoltage and photocurrent spectroscopy of p+-i-n+ GaAs/AlGaAs quantum well heterostructures 116
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 116
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 115
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 110
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 109
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation 108
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 107
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 106
EXPERIMENTAL EVIDENCE OF DELOCALIZED STATES IN RANDOM DIMER SUPERLATTICES 106
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 106
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures 106
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells 106
Electronic structure and vertical transport in random dimer GaAs/AlxGa1-xAs superlattices 104
Is localization universal in low-dimensional disordered matter? 102
Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells 100
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 100
MOVPE GROWTH AND STUDY OF InP-BASED MATERIALS: OPPORTUNITIES AND CHALLENGES 98
Preparation by MBE and study of GaSb-based structures 98
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs. 98
Optical functions from 0.01 to 5 eV of InGaP/GaAs epitaxial layers 97
Structural and Electrical Characterization of Fe Implanted GaInP: Interaction of Fe with Ion Induced Defects and Deep Trap Activation 97
“Local structure of Fe incorporated in GaInP layers by high temperature ion implantation.”. 95
PREPARATION AND CHARACTERIZATION OF Au/InGaP/GaAs SCHOTTKY BARRIERS FOR RADIATION DAMAGE INVESTIGATIONS 95
Optical absorption near the fundamental absorption edge in GaSb 95
Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers 94
Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells 92
”GaAs/InGaP MQW’s for high efficiency solar cells” 91
Incorporation of active Fe impurities in GaInP by high temperature ion implantation. 90
"Groowth and characterization of manganese-doped InAsP" 89
“Spectroscopic characterization of electrical properties of Fe implants ob GaInP/GaAs” 87
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation 86
Occupancy level of the DX center in Te-doped AlxGa1-xSb 85
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 84
“ Electrival and structural characterizatyion of Fe imnplanted InGaP” 81
“Deep level controlling the electrical properties of Fe implanted GaInP/GaAs”. 81
Experimental evidence of delocalization in correlated disorder superlattices 81
Electrical characterization of GaSb buried p-n junctions 80
Totale 6.756
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Categoria #
all - tutte 23.660
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 23.660
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211 0 0 0 0 0 0 0 0 0 0 0 1
2021/2022256 3 4 0 7 9 4 33 50 18 23 21 84
2022/2023944 103 107 76 54 84 116 6 70 301 1 21 5
2023/2024307 13 34 8 12 18 102 26 16 10 17 19 32
2024/20251.165 10 68 79 60 116 270 2 22 130 116 79 213
2025/20262.437 232 207 265 280 427 157 279 118 254 152 44 22
Totale 6.756