IRIS
TARRICONE, Luciano
 Distribuzione geografica
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Continente #
NA - Nord America 1.452
EU - Europa 1.191
AS - Asia 626
AF - Africa 3
SA - Sud America 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 3.275
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Nazione #
US - Stati Uniti d'America 1.420
CN - Cina 487
IE - Irlanda 253
SE - Svezia 243
UA - Ucraina 241
FI - Finlandia 230
DE - Germania 132
SG - Singapore 110
IT - Italia 33
CA - Canada 32
TR - Turchia 26
FR - Francia 19
GB - Regno Unito 16
BE - Belgio 13
RU - Federazione Russa 5
CI - Costa d'Avorio 3
NL - Olanda 3
AT - Austria 2
CO - Colombia 2
IN - India 2
EU - Europa 1
ID - Indonesia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 3.275
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Città #
Jacksonville 282
Chandler 263
Dublin 253
Beijing 150
Singapore 79
Boardman 76
Dearborn 74
Ashburn 70
Nanjing 65
Ann Arbor 62
Princeton 59
San Mateo 51
Shanghai 43
New York 42
Wilmington 39
Shenyang 38
Toronto 28
Izmir 24
Nanchang 24
Kunming 23
Parma 23
Hebei 22
Jinan 21
Hefei 18
Des Moines 17
Helsinki 16
Woodbridge 16
Bremen 15
Jiaxing 14
Brussels 13
Santa Clara 12
Tianjin 12
Marseille 11
Norwalk 9
Changsha 8
Strasbourg 8
Hangzhou 6
Houston 6
Seattle 6
Borås 5
Fremont 4
Guangzhou 4
Los Angeles 4
Abidjan 3
Auburn Hills 3
Catania 3
Dallas 3
Escanaba 3
Fuzhou 3
Haikou 3
Ningbo 3
State College 3
Jinhua 2
Kocaeli 2
Mestre 2
Phoenix 2
Quzhou 2
Taiyuan 2
Vienna 2
Zhengzhou 2
Atlanta 1
Augusta 1
Bratislava 1
Buffalo 1
Chengdu 1
Chicago 1
Düsseldorf 1
Falls Church 1
Fushan 1
Gatchina 1
Huzhou 1
Milan 1
Montreal 1
Moscow 1
Ottawa 1
Qingdao 1
Ravenna 1
Rockville 1
Saint Petersburg 1
Seregno 1
Taizhou 1
Wenzhou 1
Wuhan 1
Yekaterinburg 1
Yorkton 1
Totale 2.083
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Nome #
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 85
ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GaAs-BASED p-i-n STRUCTURE GROWN BY MOVPE 82
"Admittance spectroscopy of InGaP/GaAs MQW structures” 79
A study of the electrical properties controlled by residual acceptors in gallium antimonide 73
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 73
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 72
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 72
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 70
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" 69
Admittance spectroscopy of GaAs/InGaP MQW structures 69
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 69
CdIn2S2Se2: a new semiconducting compound 67
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 65
"Tailoring the depth of the Mn acceptor in InAsP" 63
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 63
Is localization universal in low-dimensional disordered matter? 62
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 61
Photovoltage and photocurrent spectroscopy of p+-i-n+ GaAs/AlGaAs quantum well heterostructures 61
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 60
Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation 60
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 60
PREPARATION AND CHARACTERIZATION OF Au/InGaP/GaAs SCHOTTKY BARRIERS FOR RADIATION DAMAGE INVESTIGATIONS 59
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells 59
EXPERIMENTAL EVIDENCE OF DELOCALIZED STATES IN RANDOM DIMER SUPERLATTICES 58
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 58
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 57
Investigation of GaAs/InGaP superlattices for quantum well solar cells 56
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 56
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE 55
A shallow state coexisting with the DX center in Te-doped AlGaSb 55
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 55
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation 54
“Spectroscopic characterization of electrical properties of Fe implants ob GaInP/GaAs” 54
Optical functions from 0.01 to 5 eV of InGaP/GaAs epitaxial layers 54
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 54
Structural and Electrical Characterization of Fe Implanted GaInP: Interaction of Fe with Ion Induced Defects and Deep Trap Activation 54
Concentration dependence of optical absorption in Tellurium doped GaSb 53
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 51
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures 51
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 51
Preparation by MBE and study of GaSb-based structures 50
Optical absorption near the fundamental absorption edge in GaSb 50
Electronic structure and vertical transport in random dimer GaAs/AlxGa1-xAs superlattices 49
MOVPE GROWTH AND STUDY OF InP-BASED MATERIALS: OPPORTUNITIES AND CHALLENGES 48
“ Electrival and structural characterizatyion of Fe imnplanted InGaP” 48
“Local structure of Fe incorporated in GaInP layers by high temperature ion implantation.”. 46
Occupancy level of the DX center in Te-doped AlxGa1-xSb 45
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 45
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation 45
”GaAs/InGaP MQW’s for high efficiency solar cells” 45
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs. 45
"Groowth and characterization of manganese-doped InAsP" 44
Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells 43
Incorporation of active Fe impurities in GaInP by high temperature ion implantation. 41
Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells 41
“Deep level controlling the electrical properties of Fe implanted GaInP/GaAs”. 41
Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers 40
Electrical characterization of GaSb buried p-n junctions 38
Experimental evidence of delocalization in correlated disorder superlattices 38
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 8
Totale 3.329
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Categoria #
all - tutte 12.572
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.572
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020446 0 0 0 7 65 56 81 8 74 60 30 65
2020/2021411 3 57 46 1 55 2 52 2 114 11 67 1
2021/2022256 3 4 0 7 9 4 33 50 18 23 21 84
2022/2023944 103 107 76 54 84 116 6 70 301 1 21 5
2023/2024307 13 34 8 12 18 102 26 16 10 17 19 32
2024/2025175 10 68 79 18 0 0 0 0 0 0 0 0
Totale 3.329