IRIS
TARRICONE, Luciano
 Distribuzione geografica
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Continente #
NA - Nord America 2.759
AS - Asia 2.259
EU - Europa 1.541
SA - Sud America 335
AF - Africa 98
Continente sconosciuto - Info sul continente non disponibili 55
Totale 7.047
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Nazione #
US - Stati Uniti d'America 2.683
SG - Singapore 840
CN - Cina 728
VN - Vietnam 319
FI - Finlandia 285
IE - Irlanda 254
SE - Svezia 251
UA - Ucraina 246
BR - Brasile 245
DE - Germania 179
HK - Hong Kong 172
FR - Francia 74
ZA - Sudafrica 74
NL - Olanda 68
GB - Regno Unito 58
IT - Italia 58
CA - Canada 51
TR - Turchia 40
AR - Argentina 36
IN - India 35
BD - Bangladesh 28
RU - Federazione Russa 22
CO - Colombia 17
EC - Ecuador 15
BE - Belgio 14
IQ - Iraq 13
MX - Messico 12
PH - Filippine 10
ID - Indonesia 9
JP - Giappone 7
ES - Italia 6
MA - Marocco 6
PK - Pakistan 6
TH - Thailandia 6
UZ - Uzbekistan 6
VE - Venezuela 6
EG - Egitto 5
KR - Corea 5
MY - Malesia 5
PL - Polonia 5
UY - Uruguay 5
AZ - Azerbaigian 4
CL - Cile 4
KZ - Kazakistan 4
LB - Libano 4
SA - Arabia Saudita 4
AT - Austria 3
CI - Costa d'Avorio 3
CR - Costa Rica 3
CZ - Repubblica Ceca 3
KE - Kenya 3
PT - Portogallo 3
PY - Paraguay 3
TN - Tunisia 3
BA - Bosnia-Erzegovina 2
CH - Svizzera 2
DZ - Algeria 2
JM - Giamaica 2
KG - Kirghizistan 2
LT - Lituania 2
LV - Lettonia 2
MN - Mongolia 2
PA - Panama 2
PE - Perù 2
QA - Qatar 2
AE - Emirati Arabi Uniti 1
BB - Barbados 1
BG - Bulgaria 1
BH - Bahrain 1
BO - Bolivia 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
EU - Europa 1
GE - Georgia 1
GT - Guatemala 1
GY - Guiana 1
JO - Giordania 1
KW - Kuwait 1
MK - Macedonia 1
OM - Oman 1
PR - Porto Rico 1
PS - Palestinian Territory 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TC - Turks e Caicos 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
Totale 6.993
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Città #
Singapore 407
Ashburn 309
Santa Clara 304
Jacksonville 282
Chandler 263
Dublin 254
Beijing 230
San Jose 222
Hong Kong 167
Ho Chi Minh City 116
Council Bluffs 103
Boardman 82
Dearborn 75
Johannesburg 70
Hanoi 68
Nanjing 66
New York 65
Ann Arbor 62
Helsinki 61
Princeton 59
Dallas 54
Lauterbourg 51
San Mateo 51
Los Angeles 43
Shanghai 43
Shenyang 39
Wilmington 39
Toronto 33
Izmir 24
Kunming 24
Munich 24
Nanchang 24
Parma 23
Hebei 22
Jinan 22
Buffalo 21
Hefei 18
Des Moines 17
Woodbridge 16
Bremen 15
Falkenstein 15
Jiaxing 15
São Paulo 15
Brussels 14
Haiphong 13
Tianjin 13
London 12
Changsha 11
Da Nang 11
Marseille 11
Moscow 11
Brooklyn 10
Seattle 10
Turku 10
Norwalk 9
Chennai 8
Denver 8
Houston 8
Strasbourg 8
Belo Horizonte 7
Guangzhou 7
Hangzhou 7
Atlanta 6
Baghdad 6
Biên Hòa 6
Hải Dương 6
Manchester 6
Milan 6
Montreal 6
Orem 6
Resistencia 6
Rio de Janeiro 6
Stockholm 6
Tashkent 6
Bologna 5
Borås 5
Boston 5
Buenos Aires 5
Chicago 5
Curitiba 5
Guayaquil 5
Kensington 5
Phoenix 5
Quito 5
Redondo Beach 5
Tokyo 5
Warsaw 5
Ankara 4
Baku 4
Bogotá 4
Can Tho 4
Columbus 4
Frankfurt am Main 4
Fremont 4
Montevideo 4
New Delhi 4
Ningbo 4
Porto Alegre 4
San Francisco 4
Zhengzhou 4
Totale 4.290
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Nome #
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 198
ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GaAs-BASED p-i-n STRUCTURE GROWN BY MOVPE 178
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 176
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 164
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" 157
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 151
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 149
Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation 143
A study of the electrical properties controlled by residual acceptors in gallium antimonide 142
Admittance spectroscopy of GaAs/InGaP MQW structures 141
A shallow state coexisting with the DX center in Te-doped AlGaSb 141
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 137
"Admittance spectroscopy of InGaP/GaAs MQW structures” 137
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 135
CdIn2S2Se2: a new semiconducting compound 132
"Tailoring the depth of the Mn acceptor in InAsP" 131
Investigation of GaAs/InGaP superlattices for quantum well solar cells 129
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 128
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE 125
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 125
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 124
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 124
Concentration dependence of optical absorption in Tellurium doped GaSb 121
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 121
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 120
Photovoltage and photocurrent spectroscopy of p+-i-n+ GaAs/AlGaAs quantum well heterostructures 120
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 118
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation 114
EXPERIMENTAL EVIDENCE OF DELOCALIZED STATES IN RANDOM DIMER SUPERLATTICES 114
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 114
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 112
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 112
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 111
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures 109
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells 109
Electronic structure and vertical transport in random dimer GaAs/AlxGa1-xAs superlattices 107
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 105
Is localization universal in low-dimensional disordered matter? 104
MOVPE GROWTH AND STUDY OF InP-BASED MATERIALS: OPPORTUNITIES AND CHALLENGES 102
Preparation by MBE and study of GaSb-based structures 102
Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells 102
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs. 102
Optical functions from 0.01 to 5 eV of InGaP/GaAs epitaxial layers 100
Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers 99
Structural and Electrical Characterization of Fe Implanted GaInP: Interaction of Fe with Ion Induced Defects and Deep Trap Activation 98
Optical absorption near the fundamental absorption edge in GaSb 98
Incorporation of active Fe impurities in GaInP by high temperature ion implantation. 97
Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells 97
PREPARATION AND CHARACTERIZATION OF Au/InGaP/GaAs SCHOTTKY BARRIERS FOR RADIATION DAMAGE INVESTIGATIONS 97
“Local structure of Fe incorporated in GaInP layers by high temperature ion implantation.”. 96
”GaAs/InGaP MQW’s for high efficiency solar cells” 95
"Groowth and characterization of manganese-doped InAsP" 92
“Spectroscopic characterization of electrical properties of Fe implants ob GaInP/GaAs” 91
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 90
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation 89
Occupancy level of the DX center in Te-doped AlxGa1-xSb 87
“Deep level controlling the electrical properties of Fe implanted GaInP/GaAs”. 85
“ Electrival and structural characterizatyion of Fe imnplanted InGaP” 84
Experimental evidence of delocalization in correlated disorder superlattices 84
Electrical characterization of GaSb buried p-n junctions 82
Totale 7.047
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Categoria #
all - tutte 25.529
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 25.529
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022249 0 0 0 7 9 4 33 50 18 23 21 84
2022/2023944 103 107 76 54 84 116 6 70 301 1 21 5
2023/2024307 13 34 8 12 18 102 26 16 10 17 19 32
2024/20251.165 10 68 79 60 116 270 2 22 130 116 79 213
2025/20262.452 232 207 265 280 427 157 279 118 254 152 44 37
2026/2027276 54 119 100 3 0 0 0 0 0 0 0 0
Totale 7.047