IRIS
TARRICONE, Luciano
 Distribuzione geografica
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Continente #
NA - Nord America 2.143
AS - Asia 1.744
EU - Europa 1.445
SA - Sud America 284
AF - Africa 83
Continente sconosciuto - Info sul continente non disponibili 1
Totale 5.700
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Nazione #
US - Stati Uniti d'America 2.087
SG - Singapore 689
CN - Cina 657
FI - Finlandia 285
IE - Irlanda 254
SE - Svezia 250
UA - Ucraina 245
BR - Brasile 221
DE - Germania 176
HK - Hong Kong 151
VN - Vietnam 143
NL - Olanda 67
ZA - Sudafrica 66
GB - Regno Unito 46
CA - Canada 42
IT - Italia 39
AR - Argentina 34
TR - Turchia 31
RU - Federazione Russa 22
FR - Francia 21
IN - India 15
BE - Belgio 14
EC - Ecuador 12
IQ - Iraq 11
BD - Bangladesh 10
MX - Messico 8
ID - Indonesia 6
CO - Colombia 5
MA - Marocco 5
PL - Polonia 5
AZ - Azerbaigian 4
JP - Giappone 4
UZ - Uzbekistan 4
AT - Austria 3
CI - Costa d'Avorio 3
CZ - Repubblica Ceca 3
EG - Egitto 3
ES - Italia 3
MY - Malesia 3
UY - Uruguay 3
BA - Bosnia-Erzegovina 2
CL - Cile 2
KE - Kenya 2
KR - Corea 2
LB - Libano 2
LT - Lituania 2
LV - Lettonia 2
PE - Perù 2
PK - Pakistan 2
PT - Portogallo 2
PY - Paraguay 2
VE - Venezuela 2
AE - Emirati Arabi Uniti 1
BG - Bulgaria 1
BH - Bahrain 1
BO - Bolivia 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ET - Etiopia 1
EU - Europa 1
GE - Georgia 1
GT - Guatemala 1
KG - Kirghizistan 1
KW - Kuwait 1
KZ - Kazakistan 1
MK - Macedonia 1
PA - Panama 1
PH - Filippine 1
QA - Qatar 1
RS - Serbia 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TC - Turks e Caicos 1
TH - Thailandia 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
Totale 5.700
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Città #
Singapore 336
Jacksonville 282
Chandler 263
Santa Clara 261
Dublin 254
Ashburn 249
Beijing 223
Hong Kong 151
Boardman 79
Dearborn 74
Ho Chi Minh City 67
Nanjing 66
Ann Arbor 62
Johannesburg 62
Helsinki 61
Princeton 59
New York 54
San Mateo 51
Dallas 50
Shanghai 43
Shenyang 39
Wilmington 39
Hanoi 32
Toronto 32
Los Angeles 31
Izmir 24
Munich 24
Nanchang 24
Kunming 23
Parma 23
Hebei 22
Jinan 22
Hefei 18
Des Moines 17
Buffalo 16
Woodbridge 16
Bremen 15
Falkenstein 15
Jiaxing 15
São Paulo 15
Brussels 14
Tianjin 13
London 12
Changsha 11
Marseille 11
Moscow 11
Turku 10
Haiphong 9
Norwalk 9
Brooklyn 8
Council Bluffs 8
Strasbourg 8
Guangzhou 7
Hangzhou 7
Denver 6
Houston 6
Resistencia 6
Seattle 6
Stockholm 6
Baghdad 5
Belo Horizonte 5
Biên Hòa 5
Borås 5
Buenos Aires 5
Chennai 5
Manchester 5
Phoenix 5
Redondo Beach 5
Rio de Janeiro 5
Warsaw 5
Atlanta 4
Baku 4
Boston 4
Chicago 4
Columbus 4
Curitiba 4
Fremont 4
Quito 4
Tashkent 4
Tokyo 4
Zhengzhou 4
Abidjan 3
Ankara 3
Aparecida de Goiânia 3
Auburn Hills 3
Betim 3
Birmingham 3
Brasília 3
Canoas 3
Casablanca 3
Catania 3
Da Nang 3
Escanaba 3
Frankfurt am Main 3
Fuzhou 3
Guayaquil 3
Haikou 3
Manaus 3
Milan 3
Montreal 3
Totale 3.533
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Nome #
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 145
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 142
ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GaAs-BASED p-i-n STRUCTURE GROWN BY MOVPE 137
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 137
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" 125
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 121
A study of the electrical properties controlled by residual acceptors in gallium antimonide 120
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 120
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 115
A shallow state coexisting with the DX center in Te-doped AlGaSb 113
"Admittance spectroscopy of InGaP/GaAs MQW structures” 113
Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation 113
Admittance spectroscopy of GaAs/InGaP MQW structures 112
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 108
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 107
Investigation of GaAs/InGaP superlattices for quantum well solar cells 104
"Tailoring the depth of the Mn acceptor in InAsP" 103
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 103
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 102
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 102
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 101
Photovoltage and photocurrent spectroscopy of p+-i-n+ GaAs/AlGaAs quantum well heterostructures 99
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE 98
Concentration dependence of optical absorption in Tellurium doped GaSb 97
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 96
CdIn2S2Se2: a new semiconducting compound 95
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures 95
Electronic structure and vertical transport in random dimer GaAs/AlxGa1-xAs superlattices 95
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 94
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 94
EXPERIMENTAL EVIDENCE OF DELOCALIZED STATES IN RANDOM DIMER SUPERLATTICES 93
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 93
Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells 91
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 91
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells 91
MOVPE GROWTH AND STUDY OF InP-BASED MATERIALS: OPPORTUNITIES AND CHALLENGES 89
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs. 89
Optical absorption near the fundamental absorption edge in GaSb 88
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 88
“Local structure of Fe incorporated in GaInP layers by high temperature ion implantation.”. 87
Is localization universal in low-dimensional disordered matter? 87
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation 86
Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells 83
PREPARATION AND CHARACTERIZATION OF Au/InGaP/GaAs SCHOTTKY BARRIERS FOR RADIATION DAMAGE INVESTIGATIONS 82
Optical functions from 0.01 to 5 eV of InGaP/GaAs epitaxial layers 81
Structural and Electrical Characterization of Fe Implanted GaInP: Interaction of Fe with Ion Induced Defects and Deep Trap Activation 81
“Spectroscopic characterization of electrical properties of Fe implants ob GaInP/GaAs” 80
Preparation by MBE and study of GaSb-based structures 79
Incorporation of active Fe impurities in GaInP by high temperature ion implantation. 79
"Groowth and characterization of manganese-doped InAsP" 78
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation 78
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 76
Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers 76
Occupancy level of the DX center in Te-doped AlxGa1-xSb 73
Electrical characterization of GaSb buried p-n junctions 73
”GaAs/InGaP MQW’s for high efficiency solar cells” 73
“ Electrival and structural characterizatyion of Fe imnplanted InGaP” 71
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 71
Experimental evidence of delocalization in correlated disorder superlattices 71
“Deep level controlling the electrical properties of Fe implanted GaInP/GaAs”. 70
Totale 5.754
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Categoria #
all - tutte 20.857
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 20.857
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021249 0 0 0 0 0 2 52 2 114 11 67 1
2021/2022256 3 4 0 7 9 4 33 50 18 23 21 84
2022/2023944 103 107 76 54 84 116 6 70 301 1 21 5
2023/2024307 13 34 8 12 18 102 26 16 10 17 19 32
2024/20251.165 10 68 79 60 116 270 2 22 130 116 79 213
2025/20261.435 232 207 265 280 427 24 0 0 0 0 0 0
Totale 5.754