IRIS
TARRICONE, Luciano
 Distribuzione geografica
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Continente #
NA - Nord America 2.190
AS - Asia 1.796
EU - Europa 1.447
SA - Sud America 287
AF - Africa 83
Continente sconosciuto - Info sul continente non disponibili 1
Totale 5.804
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Nazione #
US - Stati Uniti d'America 2.134
SG - Singapore 728
CN - Cina 667
FI - Finlandia 285
IE - Irlanda 254
SE - Svezia 250
UA - Ucraina 245
BR - Brasile 224
DE - Germania 176
HK - Hong Kong 152
VN - Vietnam 143
NL - Olanda 67
ZA - Sudafrica 66
GB - Regno Unito 48
CA - Canada 42
IT - Italia 39
AR - Argentina 34
TR - Turchia 31
RU - Federazione Russa 22
FR - Francia 21
IN - India 15
BE - Belgio 14
EC - Ecuador 12
IQ - Iraq 11
BD - Bangladesh 10
MX - Messico 8
ID - Indonesia 6
CO - Colombia 5
JP - Giappone 5
MA - Marocco 5
PL - Polonia 5
AZ - Azerbaigian 4
UZ - Uzbekistan 4
AT - Austria 3
CI - Costa d'Avorio 3
CZ - Repubblica Ceca 3
EG - Egitto 3
ES - Italia 3
MY - Malesia 3
PK - Pakistan 3
UY - Uruguay 3
BA - Bosnia-Erzegovina 2
CL - Cile 2
KE - Kenya 2
KR - Corea 2
LB - Libano 2
LT - Lituania 2
LV - Lettonia 2
PE - Perù 2
PT - Portogallo 2
PY - Paraguay 2
VE - Venezuela 2
AE - Emirati Arabi Uniti 1
BG - Bulgaria 1
BH - Bahrain 1
BO - Bolivia 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ET - Etiopia 1
EU - Europa 1
GE - Georgia 1
GT - Guatemala 1
KG - Kirghizistan 1
KW - Kuwait 1
KZ - Kazakistan 1
MK - Macedonia 1
PA - Panama 1
PH - Filippine 1
QA - Qatar 1
RS - Serbia 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TC - Turks e Caicos 1
TH - Thailandia 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
Totale 5.804
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Città #
Singapore 370
Jacksonville 282
Ashburn 278
Chandler 263
Santa Clara 262
Dublin 254
Beijing 223
Hong Kong 152
Boardman 82
Dearborn 74
Ho Chi Minh City 67
Nanjing 66
Ann Arbor 62
Johannesburg 62
Helsinki 61
Princeton 59
New York 55
Dallas 51
San Mateo 51
Shanghai 43
Shenyang 39
Wilmington 39
Hanoi 32
Los Angeles 32
Toronto 32
Izmir 24
Munich 24
Nanchang 24
Kunming 23
Parma 23
Hebei 22
Jinan 22
Hefei 18
Des Moines 17
Buffalo 16
Woodbridge 16
Bremen 15
Falkenstein 15
Jiaxing 15
São Paulo 15
Brussels 14
Tianjin 13
London 12
Changsha 11
Marseille 11
Moscow 11
Turku 10
Brooklyn 9
Haiphong 9
Norwalk 9
Council Bluffs 8
Strasbourg 8
Guangzhou 7
Hangzhou 7
Denver 6
Houston 6
Resistencia 6
Rio de Janeiro 6
San Jose 6
Seattle 6
Stockholm 6
Baghdad 5
Belo Horizonte 5
Biên Hòa 5
Borås 5
Boston 5
Buenos Aires 5
Chennai 5
Manchester 5
Phoenix 5
Redondo Beach 5
Tokyo 5
Warsaw 5
Atlanta 4
Baku 4
Chicago 4
Columbus 4
Curitiba 4
Fremont 4
Quito 4
Tashkent 4
Zhengzhou 4
Abidjan 3
Ankara 3
Aparecida de Goiânia 3
Auburn Hills 3
Betim 3
Birmingham 3
Brasília 3
Canoas 3
Casablanca 3
Catania 3
Da Nang 3
Escanaba 3
Frankfurt am Main 3
Fuzhou 3
Guayaquil 3
Haikou 3
Manaus 3
Milan 3
Totale 3.611
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Nome #
Control of the n-type doping in AlGaSb:DX center behavior of the Te impurity 148
Growth and characterization of buried GaSb p-n junctions forphotovoltaic applications 144
ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GaAs-BASED p-i-n STRUCTURE GROWN BY MOVPE 142
Determination of the valence band offset of MOVPE-grown InGaP/GaAs multiple quantum wells by admittance spectroscopy 141
"Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE width TBAs and TBP" 129
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 124
A study of the electrical properties controlled by residual acceptors in gallium antimonide 123
Electrical and photoluminescence properties of undoped GaSb prepared by MBE and Atomic Layer MBE 123
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 117
A shallow state coexisting with the DX center in Te-doped AlGaSb 117
Admittance spectroscopy of GaAs/InGaP MQW structures 116
Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation 116
"Admittance spectroscopy of InGaP/GaAs MQW structures” 115
Anomalies in the temperature dependence of the photoelectrical response of GaAs/InGaP superlattices 113
Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy 109
Investigation of GaAs/InGaP superlattices for quantum well solar cells 107
"Tailoring the depth of the Mn acceptor in InAsP" 106
Vertical transport through GaAs/InGaP multi-quantum-well p-i-n diode with evidence of tunneling effects 105
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices 104
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs 104
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices 103
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE 101
Concentration dependence of optical absorption in Tellurium doped GaSb 100
Photovoltage and photocurrent spectroscopy of p+-i-n+ GaAs/AlGaAs quantum well heterostructures 100
CdIn2S2Se2: a new semiconducting compound 97
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures 97
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs 96
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements 96
Electronic structure and vertical transport in random dimer GaAs/AlxGa1-xAs superlattices 95
Investigation of GaAs/AlGaAs MQW structures by optical and photoelectrical measurements 95
EXPERIMENTAL EVIDENCE OF DELOCALIZED STATES IN RANDOM DIMER SUPERLATTICES 94
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization 93
On the electrical properties of Si-doped InGaP layers grown by lowpressure‐metalorganic vapor phase epitaxy 93
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells 92
Photocurrent Spectroscopy of Electron Levels in Semiconductor Quantum Wells 91
Is localization universal in low-dimensional disordered matter? 90
MOVPE GROWTH AND STUDY OF InP-BASED MATERIALS: OPPORTUNITIES AND CHALLENGES 89
Optical absorption near the fundamental absorption edge in GaSb 89
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs. 89
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation 88
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources 88
“Local structure of Fe incorporated in GaInP layers by high temperature ion implantation.”. 87
PREPARATION AND CHARACTERIZATION OF Au/InGaP/GaAs SCHOTTKY BARRIERS FOR RADIATION DAMAGE INVESTIGATIONS 84
Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells 83
Structural and Electrical Characterization of Fe Implanted GaInP: Interaction of Fe with Ion Induced Defects and Deep Trap Activation 83
Optical functions from 0.01 to 5 eV of InGaP/GaAs epitaxial layers 82
“Spectroscopic characterization of electrical properties of Fe implants ob GaInP/GaAs” 81
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 80
Preparation by MBE and study of GaSb-based structures 80
Incorporation of active Fe impurities in GaInP by high temperature ion implantation. 80
"Groowth and characterization of manganese-doped InAsP" 80
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation 79
Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers 77
Occupancy level of the DX center in Te-doped AlxGa1-xSb 74
Electrical characterization of GaSb buried p-n junctions 73
”GaAs/InGaP MQW’s for high efficiency solar cells” 73
“ Electrival and structural characterizatyion of Fe imnplanted InGaP” 71
Photoionization cross-section of the DX center in Te-doped AlxGa1-xSb 71
Experimental evidence of delocalization in correlated disorder superlattices 71
“Deep level controlling the electrical properties of Fe implanted GaInP/GaAs”. 70
Totale 5.858
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Categoria #
all - tutte 21.377
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.377
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021249 0 0 0 0 0 2 52 2 114 11 67 1
2021/2022256 3 4 0 7 9 4 33 50 18 23 21 84
2022/2023944 103 107 76 54 84 116 6 70 301 1 21 5
2023/2024307 13 34 8 12 18 102 26 16 10 17 19 32
2024/20251.165 10 68 79 60 116 270 2 22 130 116 79 213
2025/20261.539 232 207 265 280 427 128 0 0 0 0 0 0
Totale 5.858